公开(公告)号：US10461192B2

公开(公告)日：2019-10-29

申请号：US14842540

申请日：2015-09-01

Applicant: Samsung Display Co., Ltd.

Inventor： Je-Hun Lee ,  Eun-Hyun Kim ,  Sang-Won Shin ,  Eun-Young Lee

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/02 ,  H01L21/443 ,  H01L29/423

Abstract: A semiconductor device may include a substrate, a gate electrode disposed on the substrate, a gate insulation layer disposed on the substrate to cover the gate electrode, an active layer including an oxide semiconductor disposed on the gate insulation layer, an insulating interlayer disposed on the gate insulation layer to cover the active layer, a protection structure including a plurality of metal oxide layers disposed on the insulating interlayer, and a source electrode and a drain electrode disposed on the protection structure.

公开(公告)号：US20150188399A1

公开(公告)日：2015-07-02

申请号：US14505712

申请日：2014-10-03

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki Fukasawa ,  Yeon-Keon Moon ,  Sang-woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: H02K41/02 ,  H02K7/09

CPC classification number: H02K41/031 ,  H01L21/677 ,  H01L21/67709 ,  H01L21/67712 ,  H01L21/6776 ,  H02K7/09

Abstract: Disclosed is an apparatus for transferring substrates capable of stably transferring substrates by using magnetic levitation. The apparatus includes a substrate stage including a substrate loading unit, a first guide block disposed at a first end of the substrate stage and including a first magnet generator, a second guide block disposed at a second end of the substrate stage and including a second magnet generator, a first guide rail accommodating the first magnet generator and including a third magnet generator, and a second guide rail accommodating the second magnet generator and including a fourth magnet generator. The first magnet generator and the third magnet generator exert repulsive force on each other, and the second magnet generator and the fourth magnet generator exert repulsive force on each other.

Abstract translation: 公开了一种通过磁悬浮转移能够稳定地转移衬底的衬底的装置。 该装置包括：衬底台，包括衬底装载单元，设置在衬底台的第一端处的第一引导块，并且包括第一磁体发生器，设置在衬底台的第二端处的第二引导块，并且包括第二磁体 发电机，容纳所述第一磁体发生器并包括第三磁体发生器的第一导轨和容纳所述第二磁体发生器并包括第四磁体发生器的第二导轨。 第一磁体发生器和第三磁体发生器相互施加排斥力，第二磁体发生器和第四磁体发生器相互施加排斥力。

公开(公告)号：US20160093743A1

公开(公告)日：2016-03-31

申请号：US14816767

申请日：2015-08-03

Applicant: Samsung Display Co., Ltd.

Inventor： Bong-Kyun KIM ,  Sang-Won Shin ,  Jong-Hyun Choung

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/45 ,  H01L27/12 ,  H01L29/423 ,  H01L21/445 ,  H01L21/4763 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/7869 ,  H01L21/445 ,  H01L27/124 ,  H01L27/1259 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/45 ,  H01L29/66969

Abstract: A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer partially overlapping the gate electrode, the semiconductor layer including an oxide semiconductor material; a source electrode and a drain electrode disposed on the semiconductor layer, the source electrode and the drain electrode including a barrier layer, a main wiring layer disposed on the barrier layer, and a first capping layer disposed on the main wiring layer and being spaced apart from each other; and second capping layers covering lateral surfaces of the main wiring layers of the source and drain electrodes.

Abstract translation: 薄膜晶体管基板包括设置在基板上的栅电极; 与所述栅电极部分重叠的半导体层，所述半导体层包括氧化物半导体材料; 设置在所述半导体层上的源电极和漏电极，所述源电极和所述漏极包括阻挡层，设置在所述阻挡层上的主布线层以及设置在所述主布线层上并且间隔开的第一覆盖层 从彼此; 以及覆盖源电极和漏电极的主配线层的侧表面的第二覆盖层。

公开(公告)号：US20150200077A1

公开(公告)日：2015-07-16

申请号：US14536317

申请日：2014-11-07

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki FUKASAWA ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/34 ,  H01J37/3405

Abstract: A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.

Abstract translation: 公开了用于溅射装置的溅射装置和气体供应管。 在一个方面中，溅射装置包括一个室，一个位于室内并被构造成在其上容纳衬底的台阶，以及基本上彼此平行布置的多个气体供应管。 气体供给管具有多个气体供给孔，气体供给管构成为向室供给气体。 溅射装置还包括放置在腔室一侧的至少一个排气泵，其中排气泵相对于腔室侧面的中心轴线基本对称地布置。

公开(公告)号：US20150091004A1

公开(公告)日：2015-04-02

申请号：US14493241

申请日：2014-09-22

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyung-Seop Kim ,  Byeong-Beom Kim ,  Sang-Won Shin ,  Dae-Young Lee ,  Chang-Oh Jeong ,  Joon-Yong Park ,  Dong-Min Lee

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/1214 ,  H01L27/1244 ,  H01L27/1251 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78669 ,  H01L29/7869 ,  Y10T428/2944

Abstract: A metal wire included in a display device, the metal wire includes a first metal layer including a nickel-chromium alloy, a first transparent oxide layer disposed on the first metal layer, and a second metal layer disposed on the first transparent oxide layer.

Abstract translation: 包括在显示装置中的金属线，金属线包括：第一金属层，包括镍 - 铬合金，设置在第一金属层上的第一透明氧化物层和设置在第一透明氧化物层上的第二金属层。

公开(公告)号：US12080721B2

公开(公告)日：2024-09-03

申请号：US17264255

申请日：2019-03-29

Applicant: Samsung Display Co., LTD.

Inventor： Hyun-Eok Shin ,  Hong-Sick Park ,  Sangwoo Sohn ,  Sang-Gab Kim ,  Gyungmin Baek ,  Sang-Won Shin

IPC: H01L27/12 ,  H01L27/32 ,  H10K59/131

CPC classification number: H01L27/124 ,  H01L27/1259 ,  H10K59/131 ,  H01L27/1218

Abstract: A display substrate may include a substrate and a wiring on the substrate. The wiring may include a metal oxide layer including at least one oxide selected from tantalum (Ta), niobium (Nb), and titanium (Ti), and a metal layer on the metal oxide layer and including copper (Cu), and a thickness of the metal oxide layer may be in a range of about 30 angstroms (Å) to about 50 Å.

公开(公告)号：US09748283B2

公开(公告)日：2017-08-29

申请号：US14664232

申请日：2015-03-20

Applicant: Samsung Display Co., LTD.

Inventor： Su-Kyoung Yang ,  Sang-Won Shin ,  Hyun-Eok Shin ,  Chan-Woo Yang ,  Dong-Min Lee

IPC: H01L21/28 ,  H01L27/12 ,  H01L29/66 ,  H01L29/49 ,  H01L29/423 ,  H01L29/45 ,  C23C14/02 ,  C23C14/58 ,  C23C14/54 ,  H01J37/34

CPC classification number: H01L27/1259 ,  C23C14/02 ,  C23C14/541 ,  C23C14/5806 ,  H01J37/34 ,  H01L21/28008 ,  H01L29/42356 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66742

Abstract: In a method of manufacturing a thin film transistor substrate, a first metal layer is formed on a first surface of a base substrate. The base substrate is cooled by contacting the first metal layer with a first cooling plate and by contacting a second surface of the base substrate with a second cooling plate. The first and second surfaces of the base substrate face opposite directions. A gate electrode is formed by patterning the first metal layer. A source electrode and a drain electrode are formed. The source electrode is spaced apart from the drain electrode. The source and drain electrodes partially overlap the gate electrode. A pixel electrode electrically connected to the drain electrode is formed.

公开(公告)号：US09246377B2

公开(公告)日：2016-01-26

申请号：US14505712

申请日：2014-10-03

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki Fukasawa ,  Yeon-Keon Moon ,  Sang-woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: B65G35/00 ,  H02K41/03 ,  H01L21/677 ,  H02K7/09

CPC classification number: H02K41/031 ,  H01L21/677 ,  H01L21/67709 ,  H01L21/67712 ,  H01L21/6776 ,  H02K7/09

Abstract: Disclosed is an apparatus for transferring substrates capable of stably transferring substrates by using magnetic levitation. The apparatus includes a substrate stage including a substrate loading unit, a first guide block disposed at a first end of the substrate stage and including a first magnet generator, a second guide block disposed at a second end of the substrate stage and including a second magnet generator, a first guide rail accommodating the first magnet generator and including a third magnet generator, and a second guide rail accommodating the second magnet generator and including a fourth magnet generator. The first magnet generator and the third magnet generator exert repulsive force on each other, and the second magnet generator and the fourth magnet generator exert repulsive force on each other.

Abstract translation: 公开了一种通过磁悬浮转移能够稳定地转移衬底的衬底的装置。 该装置包括：衬底台，包括衬底装载单元，设置在衬底台的第一端处的第一引导块，并且包括第一磁体发生器，设置在衬底台的第二端处的第二引导块，并且包括第二磁体 发电机，容纳所述第一磁体发生器并包括第三磁体发生器的第一导轨和容纳所述第二磁体发生器并包括第四磁体发生器的第二导轨。 第一磁体发生器和第三磁体发生器相互施加排斥力，第二磁体发生器和第四磁体发生器相互施加排斥力。

公开(公告)号：US09644270B2

公开(公告)日：2017-05-09

申请号：US14513463

申请日：2014-10-14

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi Kishimoto ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Takayuki Fukasawa ,  Sang-Won Shin

IPC: C23C16/50 ,  H01L29/786 ,  H01L29/66 ,  H01L21/67 ,  C23C16/40 ,  C23C16/509 ,  H01L21/677 ,  H01L21/3105 ,  C23C16/46 ,  H01L21/02

CPC classification number: C23C16/50 ,  C23C16/40 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/3105 ,  H01L21/67109 ,  H01L21/67207 ,  H01L21/67745 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

公开(公告)号：US09530622B2

公开(公告)日：2016-12-27

申请号：US14536317

申请日：2014-11-07

Applicant: Samsung Display Co., Ltd.

Inventor： Takayuki Fukasawa ,  Yeon-Keon Moon ,  Sang-Woo Sohn ,  Katsushi Kishimoto ,  Sang-Won Shin

IPC: H01J37/34 ,  H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/34 ,  H01J37/3405

Abstract: A sputtering device and a gas supply pipe for a sputter device are disclosed. In one aspect, the sputtering device includes a chamber, a stage located in the chamber and configured to receive a substrate thereon, and a plurality of gas supply pipes arranged substantially parallel to each other. The gas supply pipes have a plurality of gas supply holes and the gas supply pipes are configured to supply gas into the chamber. The sputtering device further includes at least one exhaust pump placed at a side of the chamber, wherein the exhaust pump is substantially symmetrically arranged with respect to a center axis of the side of the chamber.

Abstract translation: 公开了用于溅射装置的溅射装置和气体供应管。 在一个方面中，溅射装置包括一个室，一个位于室内并被构造成在其上容纳衬底的台阶，以及基本上彼此平行布置的多个气体供应管。 气体供给管具有多个气体供给孔，气体供给管构成为向室供给气体。 溅射装置还包括放置在腔室一侧的至少一个排气泵，其中排气泵相对于腔室侧面的中心轴线基本对称地布置。