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1.发明授权Methods of forming a fine pattern on a substrate and methods of forming a semiconductor device having a fine pattern 有权在基板上形成精细图案的方法以及形成具有精细图案的半导体器件的方法公开(公告)号：US08877634B2
公开(公告)日：2014-11-04
申请号：US13720170
申请日：2012-12-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dong-Woon Shin , Bong-Hyun Kim , Su-Min Kim , Hyo-Jung Kim , Chang-Min Park , Soo-Jin Hong
IPC: H01L21/4763 , H01L21/768 , H01L21/308 , H01L21/033 , H01L27/108 , H01L21/311
CPC classification number: H01L21/308 , H01L21/0337 , H01L21/31144 , H01L21/76802 , H01L21/76816 , H01L21/76897 , H01L27/10855 , H01L27/10885 , H01L27/10888
Abstract: The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.
Abstract translation: 本发明构思提供制造具有精细图案的半导体器件的方法。 在一些实施例中，所述方法包括在衬底上形成蚀刻靶膜，在蚀刻靶膜上形成第一掩模图案，通过在第一掩模图案中执行离子注入工艺形成第二掩模图案，并蚀刻蚀刻 - 使用第二掩模图案的目标膜。
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公开(公告)号：US09632437B2
公开(公告)日：2017-04-25
申请号：US13942854
申请日：2013-07-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jin-Hong Park , Jeong-Ho Yeo , Joo-On Park , Chang-Min Park
IPC: G03F7/20
CPC classification number: G03F7/70916
Abstract: Provided are a lithography apparatus, a method for lithography and a stage system. The lithography apparatus includes a reticle stage having a reticle, at least one nozzle on at least one surface of the reticle stage and configured to allow shielding gas to flow to a surface of the reticle to form an air curtain, and a gas supply unit configured to supply the nozzle with the shielding gas.
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3.发明申请Methods of Forming a Fine Pattern on a Substrate and Methods of Forming a Semiconductor Device Having a Fine Pattern 有权在基板上形成精细图案的方法以及形成具有精细图案的半导体器件的方法公开(公告)号：US20130267092A1
公开(公告)日：2013-10-10
申请号：US13720170
申请日：2012-12-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Dong-Woon Shin , Bong-Hyun Kim , Su-Min Kim , Hyo-Jung Kim , Chang-Min Park , Soo-Jin Hong
IPC: H01L21/308 , H01L21/768
CPC classification number: H01L21/308 , H01L21/0337 , H01L21/31144 , H01L21/76802 , H01L21/76816 , H01L21/76897 , H01L27/10855 , H01L27/10885 , H01L27/10888
Abstract: The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.
Abstract translation: 本发明构思提供制造具有精细图案的半导体器件的方法。 在一些实施例中，所述方法包括在衬底上形成蚀刻靶膜，在蚀刻靶膜上形成第一掩模图案，通过在第一掩模图案中执行离子注入工艺形成第二掩模图案，并蚀刻蚀刻 - 使用第二掩模图案的目标膜。
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Patent Agency Ranking
公开(公告)号：US09658522B2
公开(公告)日：2017-05-23
申请号：US14814763
申请日：2015-07-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Hyun Kim , Dong-Wan Kim , Chang-Min Park , In-Sung Kim , Dong-Gun Lee
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: A reflective extreme ultraviolet (EUV) mask includes a mask substrate, a reflecting layer on an upper surface of the mask substrate, and an absorbing layer pattern on an upper surface of the reflecting layer, the absorbing layer pattern having an exposing region and a peripheral region, and the absorbing layer pattern including a grating pattern in the peripheral region to reduce reflectivity of light incident on the peripheral region.
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公开(公告)号：US20160131970A1
公开(公告)日：2016-05-12
申请号：US14994404
申请日：2016-01-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-Seok Heo , Chang-Min Park , Seok-Hwan Oh , Jeong-Ho Yeo
CPC classification number: G03F7/0002 , B29C35/0805 , B29C2035/0827 , B29L2031/737 , B82Y10/00 , B82Y40/00
Abstract: A method of manufacturing a mask includes dividing an upper surface of a template having a design pattern into a plurality of regions, the template being arranged over a polymer layer on a mask substrate, correcting a distorted region among the regions, pressing the polymer layer with the template to form a mask pattern corresponding to the design pattern on the polymer layer; and curing the mask pattern.
Abstract translation: 制造掩模的方法包括将具有设计图案的模板的上表面划分为多个区域，模板布置在掩模基板上的聚合物层上，校正区域之间的变形区域，将聚合物层与 该模板形成对应于聚合物层上的设计图案的掩模图案; 并固化掩模图案。
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公开(公告)号：US09885953B2
公开(公告)日：2018-02-06
申请号：US14994404
申请日：2016-01-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jin-Seok Heo , Chang-Min Park , Seok-Hwan Oh , Jeong-Ho Yeo
CPC classification number: G03F7/0002 , B29C35/0805 , B29C2035/0827 , B29L2031/737 , B82Y10/00 , B82Y40/00
Abstract: A method of manufacturing a mask includes dividing an upper surface of a template having a design pattern into a plurality of regions, the template being arranged over a polymer layer on a mask substrate, correcting a distorted region among the regions, pressing the polymer layer with the template to form a mask pattern corresponding to the design pattern on the polymer layer; and curing the mask pattern.
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公开(公告)号：US09673195B2
公开(公告)日：2017-06-06
申请号：US14264694
申请日：2014-04-29
Applicant: Samsung Electronics Co., LTD.
Inventor： Man-Hyoung Ryoo , Gi-Sung Yeo , Si-Hyeung Lee , Gyu-Chul Kim , Sung-Gon Jung , Chang-Min Park , Hoo-Sung Cho
IPC: H01L27/11 , H01L27/088 , G11C11/412 , H01L27/02
CPC classification number: H01L27/088 , G11C11/412 , H01L27/0203 , H01L27/1104 , Y10S257/903
Abstract: According to some embodiments of the invention, a substrate doped with a P type impurity is provided. An N type impurity is doped into the substrate to divide the substrate into a P type impurity region and an N type impurity region. Active patterns having a first pitch are formed in the P type and N type impurity regions. Gate patterns having a second pitch are formed on the active patterns in a direction substantially perpendicular to the active patterns. Other embodiments are described and claimed.
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8.发明授权Apparatus for creating an extreme ultraviolet light, an exposing apparatus including the same, and electronic devices manufactured using the exposing apparatus 有权用于产生极紫外光的装置，包括该装置的曝光装置以及使用该曝光装置制造的电子装置公开(公告)号：US09057954B2
公开(公告)日：2015-06-16
申请号：US13940784
申请日：2013-07-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Chang-Min Park , Joo-On Park , Jeong-Ho Yeo
CPC classification number: G03F7/2006 , G03F7/20 , G03F7/70025 , G03F7/70916 , H05G2/003 , H05G2/006 , H05G2/008
Abstract: An apparatus for creating an EUV light may include a droplet-supplying unit, a laser-irradiating unit, a light-concentrating unit and a guiding unit. The droplet-supplying unit may supply a droplet from which the EUV light may be created. The laser-irradiating unit may irradiate a laser to the droplet supplied from the droplet-supplying unit to create the EUV light. The light-concentrating unit may concentrate the EUV light created by the laser-irradiating unit. The guiding unit may guide the droplet to a position at which the laser may be irradiated. The guiding unit may have at least one gas-spraying hole for spraying a gas to a space between the droplet-supplying unit and the laser irradiation position to form a gas curtain configured to surround the droplet.
Abstract translation: 用于产生EUV光的装置可以包括液滴供给单元，激光照射单元，光聚集单元和引导单元。 液滴供给单元可以供应可以从其产生EUV光的液滴。 激光照射单元可以将激光照射到从液滴供给单元提供的液滴以产生EUV光。 光聚集单元可以集中由激光照射单元产生的EUV光。 引导单元可以将液滴引导到可以照射激光的位置。 引导单元可以具有用于将气体喷射到液滴供应单元和激光照射位置之间的空间的至少一个气体喷射孔，以形成围绕液滴的气幕。
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