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    Method of manufacturing semiconductor light emitting device
    1.
    发明授权
    Method of manufacturing semiconductor light emitting device 有权

    公开(公告)号：US11569417B2

    公开(公告)日：2023-01-31

    申请号：US17720923

    申请日：2022-04-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Young Jo Tak ,  Joo Sung Kim ,  Jong Uk Seo ,  Dong Gun Lee ,  Yong Il Kim

    IPC: H01L33/38 ,  H01L33/62 ,  H01L25/075 ,  H01L33/52

    Abstract: A method of manufacturing a semiconductor light emitting device, the method including forming a first conductivity-type semiconductor layer on a substrate; forming an active layer on the first conductivity-type semiconductor layer; forming a mask layer having an opening on the active layer; growing a second conductivity-type semiconductor layer through the opening; removing the mask layer; removing a portion of the active layer and a portion of the first conductivity-type semiconductor layer that do not overlap the second conductivity-type semiconductor layer; and removing a portion of the first conductivity-type semiconductor layer to expose the substrate.

    Systems and methods using mask pattern measurements performed with compensated light signals
    2.
    发明授权
    Systems and methods using mask pattern measurements performed with compensated light signals 有权

    公开(公告)号：US11281093B2

    公开(公告)日：2022-03-22

    申请号：US17342611

    申请日：2021-06-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji Hoon Na ,  Dong Gun Lee ,  Hee Bom Kim

    IPC: G03F7/20 ,  G03F1/84 ,  G03F1/22

    Abstract: A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.

    SYSTEMS AND METHODS USING MASK PATTERN MEASUREMENTS PERFORMED WITH COMPENSATED LIGHT SIGNALS
    3.
    发明申请
    SYSTEMS AND METHODS USING MASK PATTERN MEASUREMENTS PERFORMED WITH COMPENSATED LIGHT SIGNALS 审中-公开

    公开(公告)号：US20190235387A1

    公开(公告)日：2019-08-01

    申请号：US16114880

    申请日：2018-08-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji Hoon Na ,  Dong Gun Lee ,  Hee Bom Kim

    IPC: G03F7/20 ,  G03F1/22

    CPC classification number: G03F7/2004 ,  G03F1/22 ,  G03F7/2008 ,  G03F7/70491

    Abstract: A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.

    SYSTEMS AND METHODS USING MASK PATTERN MEASUREMENTS PERFORMED WITH COMPENSATED LIGHT SIGNALS
    4.
    发明申请
    SYSTEMS AND METHODS USING MASK PATTERN MEASUREMENTS PERFORMED WITH COMPENSATED LIGHT SIGNALS 有权

    公开(公告)号：US20210302828A1

    公开(公告)日：2021-09-30

    申请号：US17342611

    申请日：2021-06-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji Hoon Na ,  Dong Gun Lee ,  Hee Bom Kim

    IPC: G03F1/84 ,  G03F1/22 ,  G03F7/20

    Abstract: A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.

    Method of manufacturing light emitting device
    5.
    发明授权
    Method of manufacturing light emitting device 有权

    公开(公告)号：US10714667B2

    公开(公告)日：2020-07-14

    申请号：US16020071

    申请日：2018-06-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hye Seok Noh ,  Young Jin Choi ,  Yong Il Kim ,  Han Kyu Seong ,  Dong Gun Lee ,  Jin Sub Lee

    IPC: H01L33/00 ,  H01L33/62 ,  H01L33/50 ,  H04N5/225 ,  H01L33/26 ,  H01L33/56 ,  H01L27/15 ,  H01L33/40 ,  H01L25/075

    Abstract: A method of manufacturing a light emitting device includes forming light emitting devices on a support portion, each of the light emitting devices including first to third light emitting cells respectively emitting light of different colors; supplying test power to at least a portion of the light emitting devices using a multi-probe; acquiring an image from the light emitted from the portion of the light emitting devices to which the test power is supplied using an image sensor; identifying normal light emitting devices of the portion of the light emitting devices by determining whether a defect is present in each of the light emitting devices of the portion of the light emitting devices by comparing the image acquired by the image sensor with a reference image; and based on the identifying step, measuring optical characteristics of each of the light emitting devices identified as normal of the portion of the light emitting devices.

    Nanostructure semiconductor light emitting device
    9.
    发明授权
    Nanostructure semiconductor light emitting device 有权
    纳米结构半导体发光器件

    公开(公告)号：US09508898B2

    公开(公告)日：2016-11-29

    申请号：US14838322

    申请日：2015-08-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Byung Kyu Chung ,  Jung Sub Kim ,  Soo Jeong Choi ,  Yeon Woo Seo ,  Dong Gun Lee

    IPC: H01L29/06 ,  H01L33/24 ,  H01L33/32 ,  H01L33/12 ,  H01L33/18 ,  H01L33/08 ,  H01L33/06

    CPC classification number: H01L33/24 ,  H01L33/06 ,  H01L33/08 ,  H01L33/12 ,  H01L33/18 ,  H01L33/32 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    Abstract: There is provided a nanostructure semiconductor light emitting device including: a base layer formed of a first conductivity-type nitride semiconductor; and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the base layer, wherein each of the plurality of light emitting nanostructures includes a nanocore formed of a first conductivity-type nitride semiconductor; a stress control layer disposed on a surface of the nanocore and including a nitride semiconductor containing indium; an active layer disposed on the stress control layer; a second conductivity-type nitride semiconductor layer disposed on the active layer; and a defect blocking layer disposed on at least a portion of the stress control layer and including a nitride semiconductor layer having a lattice constant lower than that of the stress control layer.

    Abstract translation: 提供一种纳米结构半导体发光器件，包括：由第一导电型氮化物半导体形成的基极层; 以及多个发光纳米结构，其设置成在所述基底层上彼此间隔开，其中所述多个发光纳米结构中的每一个包括由第一导电型氮化物半导体形成的纳米孔; 应力控制层，设置在所述纳米孔的表面上，并且包括含有铟的氮化物半导体; 设置在应力控制层上的有源层; 设置在有源层上的第二导电型氮化物半导体层; 以及缺陷阻挡层，其设置在所述应力控制层的至少一部分上，并且包括具有低于所述应力控制层的晶格常数的晶格常数的氮化物半导体层。

    Systems and methods using mask pattern measurements performed with compensated light signals
    10.
    发明授权
    Systems and methods using mask pattern measurements performed with compensated light signals 有权

    公开(公告)号：US11061322B2

    公开(公告)日：2021-07-13

    申请号：US16114880

    申请日：2018-08-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ji Hoon Na ,  Dong Gun Lee ,  Hee Bom Kim

    IPC: G03F7/20 ,  G03F1/84 ,  G03F1/22

    Abstract: A system includes a plate configured for mounting of a reflective extreme ultra-violet (EUV) mask thereon and a zone plate configured to divide EUV light into zero-order light and first-order light and to pass the zero-order light and the first-order light to the reflective EUV mask. The system further includes a detector configured to receive EUV light reflected by the EUV mask and including a zero-order light detection region configured to generate a first image signal and a first-order light detection region configured to generate a second image signal, and a calculator configured to generate a compensated third image signal from the first image signal and the second image signal. The third image signal may be used to determine a distance between mask patterns of the EUV mask.

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