公开(公告)号：US20180102260A1

公开(公告)日：2018-04-12

申请号：US15700491

申请日：2017-09-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sun-Hye HWANG ,  Youn-Joung CHO ,  Won-Woong CHUNG ,  Nam-Gun KIM ,  Kong-Soo LEE ,  Badro IM ,  Yoon-Chul CHO

IPC: H01L21/3213 ,  H01L21/311

CPC classification number: H01L21/32139 ,  C23C16/0272 ,  C23C16/04 ,  C23C16/24 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/32055 ,  H01L27/10885

Abstract: A method of forming a pattern includes forming an etch target layer on a substrate, forming sacrificial patterns on the etch target layer, the sacrificial patterns including a carbon-containing material, providing a silicon-sulfur compound or a sulfur-containing gas onto the sacrificial patterns to form a seed layer, providing a silicon precursor onto the seed layer to form silicon-containing mask patterns, and at least partially etching the etch target layer using the mask patterns.

公开(公告)号：US20190304835A1

公开(公告)日：2019-10-03

申请号：US16442936

申请日：2019-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-Woo Sun ,  Ji-Eun YUN ,  Jae-Soon LIM ,  Youn-Joung CHO ,  Myong-Woon KIM ,  Kang-yong LEE ,  Sang-Ick LEE ,  Sung-Woo CHO

IPC: H01L21/768 ,  C23C16/455 ,  H01L21/285 ,  C07F17/00 ,  C07F11/00 ,  C23C16/34 ,  C23C16/18

Abstract: An organometallic precursor includes tungsten as a central metal and a cyclopentadienyl ligand bonded to the central metal. A first structure including an alkylsilyl group or a second structure including an allyl ligand is bonded to the cyclopentadienyl ligand or bonded to the central metal.

公开(公告)号：US20150255276A1

公开(公告)日：2015-09-10

申请号：US14611691

申请日：2015-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-Joung CHO ,  Youn-Soo KIM ,  Sang-Jun YIM ,  Myong-Woon KIM ,  Sang-Ick LEE ,  Sang-Chul YOUN

IPC: H01L21/02 ,  H01L23/00 ,  C07F7/00

CPC classification number: H01L21/0228 ,  C07F7/003 ,  C23C16/405 ,  C23C16/45553 ,  H01L21/02189 ,  H01L23/291 ,  H01L23/3171 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An organometallic precursor is represented by a chemical formula of Xn(M)(R1)m(R2)k. M is a central metal. X is a ligand of M and one of 6,6-dimethylfulvenyl, indenyl, cyclopentadienyl and cyclopentadienyl substituted with an amino group. R1 and R2 are ligands of M, and each independently an amino group or an ethylenediamino group. Each n, m and k is a positive integer, and a sum of n, m and k is equal to 3 or 4.

Abstract translation: 有机金属前体由Xn（M）（R1）m（R2）k的化学式表示。 M是中心金属。 X是M的配位体，被氨基取代的6,6-二甲基富维甲基，茚基，环戊二烯基和环戊二烯基中的一个。 R1和R2是M的配体，并且各自独立地是氨基或乙二胺基。 每个n，m和k是正整数，n，m和k的和等于3或4。

公开(公告)号：US20140316164A1

公开(公告)日：2014-10-23

申请号：US14319554

申请日：2014-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youn-Joung CHO ,  Senji WADA ,  Jung-Sik CHOI ,  Jin-Seo LEE ,  Atsushi SAKURAI ,  Kyoo-Chul CHO ,  Atsuya YOSHINAKA ,  Haruyoshi SATO ,  Junji UEYAMA ,  Tomoharu YOSHINO ,  Masako SHIMIZU

IPC: C07F3/00

CPC classification number: C07F3/003 ,  C07C249/02 ,  C07C251/08 ,  C23C16/18

Abstract: The β-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the β-ketoimine ligand. A method of forming the β-ketoimine ligand and a method of forming a thin film using the metal complex compound including β-ketoimine ligand are provided.

公开(公告)号：US20140309456A1

公开(公告)日：2014-10-16

申请号：US14317102

申请日：2014-06-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youn-Joung CHO ,  Senji WADA ,  Jung-Sik CHOI ,  Jin-Seo LEE ,  Atsushi SAKURAI ,  Kyoo-Chul CHO ,  Atsuya YOSHINAKA ,  Haruyoshi SATO ,  Junji UEYAMA ,  Tomoharu YOSHINO ,  Masako SHIMIZU

IPC: C07C251/08

CPC classification number: C07F3/003 ,  C07C249/02 ,  C07C251/08 ,  C23C16/18

Abstract: The β-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the β-ketoimine ligand. A method of forming the β-ketoimine ligand and a method of forming a thin film using the metal complex compound including β-ketoimine ligand are provided.

Abstract translation: 酮亚胺配体由下式1表示：其中R 1和R 2各自独立地为C 1 -C 5烷基。 金属络合物包括β-酮亚胺配体。 提供了形成β-酮亚胺配体的方法以及使用包括β-酮亚胺配体的金属络合物形成薄膜的方法。

公开(公告)号：US20140199820A1

公开(公告)日：2014-07-17

申请号：US14143255

申请日：2013-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji-Man PARK ,  Hyo-Jin YUN ,  Jin-Seo LEE ,  Youn-Joung CHO ,  Jun-Hyun CHO ,  Jung-Sik CHOI

IPC: H01L21/308 ,  H01L45/00

CPC classification number: H01L21/3088 ,  H01L21/0274 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/144 ,  H01L45/1683

Abstract: A method of forming a pattern includes forming an underlayer on an etching target layer by a chemical vapor deposition (CVD) process, the underlayer including a silicon compound combined with a photoacid generator (PAG), forming a photoresist layer on the underlayer, irradiating extreme ultraviolet (EUV) light on the photoresist layer to form a photoresist pattern, and etching the etching target layer using the photoresist pattern as an etching mask.

Abstract translation: 形成图案的方法包括通过化学气相沉积（CVD）工艺在蚀刻靶层上形成底层，底层包括与光致酸产生剂（PAG）组合的硅化合物，在底层上形成光致抗蚀剂层，照射极端 在光致抗蚀剂层上形成紫外线（EUV）光以形成光致抗蚀剂图案，并使用光刻胶图案蚀刻蚀刻目标层作为蚀刻掩模。

公开(公告)号：US20140197038A1

公开(公告)日：2014-07-17

申请号：US14155776

申请日：2014-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung-Beom PARK ,  Yun-Deok KANG ,  Ki-Hyeon KIM ,  Youn-Joung CHO ,  Jung-Sik CHOI

IPC: C25D3/38

CPC classification number: C25D3/38 ,  C25D5/04 ,  C25D5/08 ,  C25D17/001 ,  C25D17/06 ,  C25D21/14

Abstract: An electroplating solution includes an aqueous electrolyte solution including water soluble copper salts, sulfide ions and chloride ions, an accelerator including an organic material having sulfur (S), the accelerator accelerating copper (Cu) reduction, a suppressor including a polyether compound, the suppressor selectively suppressing the copper reduction, and a leveler including a water soluble polymer having nitrogen that is dissolved into positive ions in the aqueous electrolyte solution.

Abstract translation: 电镀液包括水溶性铜盐，硫化物离子和氯离子的水性电解质溶液，包含具有硫（S）的有机材料，促进铜（Cu）还原的促进剂的促进剂，包含聚醚化合物的抑制剂，抑制剂 选择性地抑制铜还原，以及包含在电解质水溶液中溶解成正离子的具有氮的水溶性聚合物的整平剂。

公开(公告)号：US20140242263A1

公开(公告)日：2014-08-28

申请号：US14176173

申请日：2014-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Chul YOUN ,  Atsushi SAKURAI ,  Masako HATASE ,  Youn-Joung CHO ,  Ji-Na KANG ,  Naoki YAMADA ,  Jung-Sik CHOI

IPC: H01G13/00

CPC classification number: H01G4/33 ,  H01G4/085 ,  H01G4/1272 ,  H01L27/10852 ,  H01L28/40

Abstract: An aluminum compound is represented by following Formula 1. In Formula 1, X is a functional group represented by following Formula 2 or Formula 3.

Abstract translation: 铝化合物由下式1表示。在式1中，X是由下式2或式3表示的官能团。