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公开(公告)号：US6105225A
公开(公告)日：2000-08-22
申请号：US600863
申请日：1996-02-09
申请人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
发明人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
CPC分类号： G01P15/0922 , G01P15/0802 , H01L41/0478 , H01L41/0815 , H01L41/313 , Y10T29/42 , Y10T29/4981
摘要： A method of manufacturing a small, light, highly accurate and inexpensive thin film sensor element is disclosed. The thin film sensor element comprises a sensor holding substrate having an opening part and a multilayer film structure adhered thereon. The multilayer film structure comprises a first electrode film, a second electrode film, and a piezoelectric dielectric oxide film present between the first and second electrode films. The method of manufacturing the thin film sensor element comprises the steps of: forming the multilayer film structure by forming the first electrode film having a (100) plane orientation on a surface of an alkali halide substrate, forming the piezoelectric dielectric oxide thereon, and forming the second electrode film on the piezoelectric dielectric oxide; adhering the multilayer film structure on the surface of the sensor holding substrate having the opening part; and dissolving and removing the alkali halide substrate with water.
摘要翻译： 公开了一种制造小型，轻型，高精度和廉价的薄膜传感器元件的方法。 薄膜传感器元件包括具有开口部分和粘附在其上的多层膜结构的传感器保持基板。 多层膜结构包括第一电极膜，第二电极膜和存在于第一和第二电极膜之间的压电电介质氧化物膜。 制造薄膜传感器元件的方法包括以下步骤：通过在碱金属卤化物衬底的表面上形成具有（100）面取向的第一电极膜来形成多层膜结构，在其上形成压电电介质氧化物，并形成 压电电介质氧化物上的第二电极膜; 将多层膜结构粘附在具有开口部的传感器保持基板的表面上; 并用水溶解和除去碱金属卤化物基质。
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公开(公告)号：US5507080A
公开(公告)日：1996-04-16
申请号：US353315
申请日：1994-12-05
申请人： Shigenori Hayashi , Takeshi Kamada , Hideo Torii , Takashi Hirao
发明人： Shigenori Hayashi , Takeshi Kamada , Hideo Torii , Takashi Hirao
IPC分类号： G01D5/241 , G01L9/00 , G01P15/125 , H01G5/16
CPC分类号： G01L9/0072 , G01D5/2417 , G01P15/125 , Y10T29/43
摘要： A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.
摘要翻译： 通过将诸如KBr的碱金属卤化物材料填充到通孔中，在表面上形成导电薄膜，并溶解和除去碱金属卤化物材料，获得小而高灵敏度的电容式压力传感器。 在厚度方向上设置有通孔的绝缘板填充有诸如KBr的熔融卤化碱材料。 在填充到通孔及其附近的碱金属卤化物材料的表面上形成导电薄膜之后，碱金属卤化物材料被水溶解并除去。 以这种方式，隔膜由通孔和导电薄膜制成。 由导电薄膜的两面之间的压力差引起的隔膜的曲线被检测为导电薄膜和电极层之间的电容变化。
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公开(公告)号：US5612536A
公开(公告)日：1997-03-18
申请号：US374989
申请日：1995-01-19
申请人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
发明人： Hideo Torii , Takeshi Kamada , Shigenori Hayashi , Ryoichi Takayama , Takashi Hirao , Masumi Hattori
CPC分类号： G01P15/0922 , G01P15/0802 , H01L41/0478 , H01L41/0815 , H01L41/313 , Y10T29/42 , Y10T29/4981
摘要： A thin film sensor element includes a sensor holding substrate having an opening part and a multilayer film adhered thereon at least consisting of an electrode film A, an electrode film B having (100) plane orientation, and a piezoelectic dielectric oxide film present between the electrode film A and the electrode film B. As a result, a thin film sensor element which is small, light, highly accurate, and inexpensive can be attained which can be used for an acceleration sensor element and a pyroelectric infrared sensor element. On the surface of a flat plate KBr substrate, a rock-salt crystal structure oxide of a conductive NiO is formed by a plasma MOCVD method whose vertical direction is crystal-oriented to direction against the substrate surface. By means of a sputtering method, a PZT film is formed by an epitaxial growth on that surface, and a Ni-Cr electrode film is formed thereon. Next, the multilayer film structure is reversed and adhered to a sensor substrate having an opening part with an adhesive. After a connection electrode is connected, the whole structure is washed with water, thereby removing the KBr substrate.
摘要翻译： 薄膜传感器元件包括：具有开口部的传感器保持基板和附着在其上的多层膜，至少由电极膜A，具有（100）面取向的电极膜B和存在于电极之间的压电电介质氧化膜 膜A和电极膜B.结果，可以获得可用于加速度传感器元件和热电型红外线传感器元件的小，轻，高精度和便宜的薄膜传感器元件。 在平板KBr基板的表面上，通过等离子体MOCVD方法形成导电NiO的岩盐晶体结构氧化物，其垂直方向相对于衬底表面<100>晶体取向。 通过溅射法，在该表面上通过外延生长形成PZT膜，在其上形成Ni-Cr电极膜。 接下来，将多层膜结构反转并粘接到具有开口部的粘合剂的传感器基板。 连接电极连接后，整个结构用水清洗，从而除去KBr基板。
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公开(公告)号：US5719740A
公开(公告)日：1998-02-17
申请号：US595240
申请日：1996-02-01
申请人： Shigenori Hayashi , Takeshi Kamada , Hideo Torii , Takashi Hirao
发明人： Shigenori Hayashi , Takeshi Kamada , Hideo Torii , Takashi Hirao
IPC分类号： G01D5/241 , G01L9/00 , G01P15/125 , H01G7/00 , G01L9/12
CPC分类号： G01L9/0072 , G01D5/2417 , G01P15/125 , Y10T29/43
摘要： A small and highly sensitive capacitance type pressure sensor is obtained by filling an alkali halide material such as KBr into a through-hole, forming a conductive thin film on the surface, and dissolving and removing the alkali halide material. An insulating plate disposed with a through-hole in the thickness direction is filled with a molten alkali halide material such as KBr. After forming a conductive thin film on the surface of the alkali halide material filled into the through-hole and the vicinity thereof, the alkali halide material is dissolved by water and removed. In this way, a diaphragm is made of the through-hole and the conductive thin film. A curve of the diaphragm caused by a pressure difference between the both faces of the conductive thin film is detected as a capacitance change between the conductive thin film and the electrode layer.
摘要翻译： 通过将诸如KBr的碱金属卤化物材料填充到通孔中，在表面上形成导电薄膜，并溶解和除去碱金属卤化物材料，获得小而高灵敏度的电容式压力传感器。 在厚度方向上设置有通孔的绝缘板填充有诸如KBr的熔融卤化碱材料。 在填充到通孔及其附近的碱金属卤化物材料的表面上形成导电薄膜之后，碱金属卤化物材料被水溶解并除去。 以这种方式，隔膜由通孔和导电薄膜制成。 由导电薄膜的两面之间的压力差引起的隔膜的曲线被检测为导电薄膜和电极层之间的电容变化。
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公开(公告)号：US5674366A
公开(公告)日：1997-10-07
申请号：US483873
申请日：1995-06-07
申请人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
发明人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
IPC分类号： C23C14/00 , C23C14/08 , C23C14/58 , G02F1/00 , H01L21/314 , H01L21/316 , H01L37/02 , H01L41/316 , C23C14/34
CPC分类号： C23C14/5853 , C23C14/0078 , C23C14/088 , H01L21/02197 , H01L21/02266 , H01L21/314 , H01L21/31691 , H01L37/025 , H01L41/1875 , H01L41/316 , G02F1/0027
摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.
摘要翻译： 具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在 基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。 此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii） 处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法 在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。
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公开(公告)号：US5672252A
公开(公告)日：1997-09-30
申请号：US483835
申请日：1995-06-15
申请人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
发明人： Shigenori Hayashi , Kazuki Komaki , Takeshi Kamada , Masatoshi Kitagawa , Takashi Deguchi , Ryoichi Takayama , Takashi Hirao
IPC分类号： C23C14/00 , C23C14/08 , C23C14/58 , G02F1/00 , H01L21/314 , H01L21/316 , H01L37/02 , H01L41/316 , C23C14/34
CPC分类号： C23C14/5853 , C23C14/0078 , C23C14/088 , H01L21/02197 , H01L21/02266 , H01L21/314 , H01L21/31691 , H01L37/025 , H01L41/1875 , H01L41/316 , G02F1/0027
摘要： A method whereby perovskite type oxide dielectric thin films with ABO.sub.3 structure are able to be formed with such features as good stability, uniformity, reproducibility, or the like, with high through-put by having a deposition process, wherein the thin films are deposited on a substrate, and a stabilization process, where no deposition of the thin films takes place, repeated alternatingly while the substrate temperature being kept near the temperature at which perovskite type oxide dielectric thin films are formed. Also, by employing (i) a processing method wherein a decomposing excitation of a reactive gas due to plasma takes place on or near the deposition surface in a gaseous atmosphere comprising a gas that reacts with the elements composing the thin films, (ii) a processing method wherein an oxidation reaction takes place on the deposition surface in a gaseous atmosphere comprising at least ozone (O.sub.3), and (iii) a processing method wherein light of short wave length is irradiated on the deposition surface in a gaseous atmosphere comprising at least reactive elements in the non-deposition process, the oxygen concentration in the deposited thin films is adjusted and dielectric thin films of good quality and an extremely low defect content are realized.
摘要翻译： 具有ABO3结构的钙钛矿型氧化物电介质薄膜能够通过具有沉积工艺的高通量形成具有良好的稳定性，均匀性，再现性等特性的方法，其中薄膜沉积在 基板和稳定化处理，其中不存在薄膜的沉积，在衬底温度保持接近形成钙钛矿型氧化物电介质薄膜的温度的同时交替重复。 此外，通过采用以下处理方法：（i）在包含与组成薄膜的元素反应的气体的气体气氛中，在等离子体发生的反应性气体的分解激发发生在沉积表面上或其附近的处理方法，（ii） 处理方法，其中在至少包含臭氧（O 3）的气体气氛中在沉积表面上发生氧化反应，和（iii）其中在至少包括至少包含臭氧（O 3）的气体气氛中在沉积表面上照射短波长的光的处理方法 在非沉积工艺中的非活性元素，沉积的薄膜中的氧浓度被调节，并且实现了良好质量和极低缺陷含量的介电薄膜。
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公开(公告)号：US5755888A
公开(公告)日：1998-05-26
申请号：US518267
申请日：1995-08-23
申请人： Hideo Torii , Eiji Fujii , Shigenori Hayashi , Ryoichi Takayama
发明人： Hideo Torii , Eiji Fujii , Shigenori Hayashi , Ryoichi Takayama
IPC分类号： C23C14/00 , C23C14/56 , C23C16/44 , C23C16/54 , C30B25/14 , H01L21/203 , H01L21/205 , H01L21/285 , C23C16/00
CPC分类号： C23C14/568 , C23C16/4412 , C23C16/54 , C30B25/14
摘要： An apparatus of forming thin films, which is small and requires a short thin-film formation time, is provided which comprises at least one physical vapor deposition device and at least one chemical vapor deposition device, wherein said physical vapor deposition device and said chemical vapor deposition device are provided with an exhaust pipe respectively for connection with a common exhaust means and an exhaust switching means. A method of forming thin films using this apparatus is also provided. According to the configuration in which the exhaust switching means is connected via exhaust pipes to the physical vapor deposition device, to the chemical vapor deposition device, and to the exhaust means, this apparatus can be accomplished in a small size which has at least two chambers and one exhaust means. In this way, thin films can be formed in a short thin-film formation time with a small apparatus, since vapor of a starting material which is led in at the time of chemical vapor deposition does not enter the physical vapor deposition device.
摘要翻译： 提供一种形成薄膜并需要短的薄膜形成时间的装置，其包括至少一个物理气相沉积装置和至少一个化学气相沉积装置，其中所述物理气相沉积装置和所述化学气相 沉积装置设置有分别用于与公共排气装置和排气开关装置连接的排气管。 还提供了使用该装置形成薄膜的方法。 根据其中排气切换装置经由排气管连接到物理气相沉积装置，化学气相沉积装置和排气装置的结构，该装置可以实现为具有至少两个室的小尺寸 和一个排气装置。 这样，由于在化学气相沉积时引入的原料的蒸气不会进入物理气相沉积装置，因此可以用小的装置在短的薄膜形成时间内形成薄膜。
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8.发明授权Method for manufacturing thin film oxide superconductors and superconductor devices by X-ray irradiation 失效通过X射线辐射制造薄膜氧化物超导体和超导体器件的方法
公开(公告)号：US5145830A
公开(公告)日：1992-09-08
申请号：US571095
申请日：1991-08-21
申请人： Shigemi Kohiki , Akira Enokihara , Hidetaka Higashino , Shinichiro Hatta , Kentaro Setsune , Kiyotaka Wasa , Takeshi Kamada , Shigenori Hayashi
发明人： Shigemi Kohiki , Akira Enokihara , Hidetaka Higashino , Shinichiro Hatta , Kentaro Setsune , Kiyotaka Wasa , Takeshi Kamada , Shigenori Hayashi
CPC分类号： H01L39/2496 , H01L39/2464 , Y10S505/701 , Y10S505/702 , Y10S505/727
摘要： A manufacturing method for the thin film superconductor is disclosed in which photons having energies larger than ultraviolet rays are irradiated to the thin film superconductor on or after formation of the thin film. Further, manufacturing methods for superconductive magnetic memory, Josephson device and superconductive transistor are disclosed.
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9.发明申请公开(公告)号：US20120034750A1
公开(公告)日：2012-02-09
申请号：US13264660
申请日：2010-10-28
IPC分类号： H01L21/336 , C23C16/50 , C23C16/455
CPC分类号： H01L29/66803 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01L21/2236
摘要： After a fin-semiconductor region (13) is formed on a substrate (11), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (13). This forms impurity-doped region (17) in at least side portions of the fin-semiconductor region (13).
摘要翻译： 在衬底（11）上形成鳍状半导体区域（13）之后，使用含杂质的气体和含氧气体在鳍状半导体区域（13）上进行等离子体掺杂。 这在散热片半导体区域（13）的至少侧边部形成杂质掺杂区域（17）。
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10.发明授权公开(公告)号：US06835523B1
公开(公告)日：2004-12-28
申请号：US09396381
申请日：1999-09-15
申请人： Shunpei Yamazaki , Kenji Itoh , Shigenori Hayashi
发明人： Shunpei Yamazaki , Kenji Itoh , Shigenori Hayashi
IPC分类号： G11B724
CPC分类号： C23C16/5096 , C23C16/26 , G11B5/72 , G11B5/74 , G11B5/78 , G11B5/82 , G11B5/8408 , G11B7/24056 , G11B11/10582 , G11B11/10584 , G11B11/10586 , Y10S430/146
摘要： In an apparatus for fabricating a carbon coating, an object such as a magnetic r cording medium is disposed on a side of an electrode connected to a high-frequency power supply. Ultrasonic vibrations are supplied to the object. Discharge is generated between the electrode connected to the high-frequency power supply and a grounded electrode to fabricate a carbon coating on the surface of the object. Also, an electrode interval is set to 6 mm or less, pressure between the electrodes is set to 15 Torr to 100 Torr, whereby high-density plasma is generated to form an ion sheath on an anode side. Therefore, a coating is fabricated on the surface of the object by bombardment of ions.
摘要翻译： 在用于制造碳涂层的装置中，诸如磁性介质的物体设置在连接到高频电源的电极的一侧。 向对象提供超声波振动。 在连接到高频电源的电极和接地电极之间产生放电，以在物体表面上制造碳涂层。 此外，将电极间隔设定为6mm以下，将电极间的压力设定为15Torr〜100Torr，由此产生高密度等离子体，以在阳极侧形成离子鞘。 因此，通过轰击离子在物体的表面上制造涂层。
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