公开(公告)号：US20220181513A1

公开(公告)日：2022-06-09

申请号：US17539345

申请日：2021-12-01

Applicant: The Regents of the University of California

Inventor： Erin C. Young ,  Benjamin P. Yonkee ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/14 ,  H01L21/00 ,  H01L31/0304 ,  C30B23/02 ,  H01L21/02 ,  C30B29/68 ,  H01S5/40 ,  C30B25/20 ,  H01L33/04 ,  C30B29/40 ,  H01S5/30 ,  H01L31/147 ,  H01L33/06

Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

公开(公告)号：US20180374699A1

公开(公告)日：2018-12-27

申请号：US15773864

申请日：2016-11-01

Applicant: The Regents of the University of California

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/02 ,  H01L29/15 ,  H01L29/20 ,  H01L29/207 ,  H01L29/36 ,  H01L29/885 ,  H01L31/18 ,  H01L31/0352 ,  H01L31/0304 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L21/02584 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/15 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/365 ,  H01L29/88 ,  H01L29/885 ,  H01L31/03044 ,  H01L31/035236 ,  H01L31/1856 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32

Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).

公开(公告)号：US10685835B2

公开(公告)日：2020-06-16

申请号：US15773864

申请日：2016-11-01

Applicant: The Regents of the University of California

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/00 ,  H01L29/00 ,  H01L31/18 ,  H01L33/00 ,  H01L21/02 ,  H01L29/15 ,  H01L29/20 ,  H01L29/207 ,  H01L29/36 ,  H01L29/885 ,  H01L31/0304 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/32 ,  H01L29/88 ,  H01L33/04

Abstract: A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).

公开(公告)号：US11217722B2

公开(公告)日：2022-01-04

申请号：US15743023

申请日：2016-07-11

Applicant: The Regents of the University of California

Inventor： Erin C. Young ,  Benjamin P. Yonkee ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L21/02 ,  H01L33/00 ,  H01L33/32 ,  H01L33/14 ,  H01L21/00 ,  H01L31/0304 ,  C30B23/02 ,  C30B29/68 ,  H01S5/40 ,  C30B25/20 ,  H01L33/04 ,  C30B29/40 ,  H01S5/30 ,  H01L31/147 ,  H01L33/06 ,  H01S5/026 ,  H01S5/183 ,  H01S5/343

Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.

公开(公告)号：US20210104504A1

公开(公告)日：2021-04-08

申请号：US16325709

申请日：2017-08-17

Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

Inventor： Benjamin P. Yonkee ,  Erin C. Young ,  Charles Forman ,  John T. Leonard ,  SeungGeun Lee ,  Dan Cohen ,  Robert M. Farrell ,  Michael Iza ,  Burhan Saifaddin ,  Abdullah Almogbel ,  Humberto Foronda ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L25/16 ,  H01L33/32 ,  H01L33/46 ,  H01L33/62 ,  H01L33/22

Abstract: A flip chip III-Nitride LED which utilizes a dielectric coating backed by a metallic reflector (e.g., aluminum or silver). High reflectivity and low resistance contacts for optoelectronic devices. Low ESD rating optoelectronic devices. A VCSEL comprising a tunnel junction for current and optical confinement.

公开(公告)号：US20190074404A1

公开(公告)日：2019-03-07

申请号：US15743023

申请日：2016-07-11

Applicant: The Regents of the University of California

Inventor： Erin C. Young ,  Benjamin P. Yonkee ,  John T. Leonard ,  Tal Margalith ,  James S. Speck ,  Steven P. DenBaars ,  Shuji Nakamura

IPC: H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L31/147

Abstract: A hybrid growth method for III-nitride tunnel junction devices uses metal-organic chemical vapor deposition (MOCVD) to grow one or more light-emitting or light-absorbing structures and ammonia-assisted or plasma-assisted molecular beam epitaxy (MBE) to grow one or more tunnel junctions. Unlike p-type gallium nitride (p-GaN) grown by MOCVD, p-GaN grown by MBE is conductive as grown, which allows for its use in a tunnel junction. Moreover, the doping limits of MBE materials are higher than MOCVD materials. The tunnel junctions can be used to incorporate multiple active regions into a single device. In addition, n-type GaN (n-GaN) can be used as a current spreading layer on both sides of the device, eliminating the need for a transparent conductive oxide (TCO) layer or a silver (Au) mirror.