公开(公告)号：US20240295020A1

公开(公告)日：2024-09-05

申请号：US18584114

申请日：2024-02-22

Applicant: Tokyo Electron Limited

Inventor： Katsumasa YAMAGUCHI ,  Shigeru NAKAJIMA

IPC: C23C16/14 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/14 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/45527 ,  C23C16/45553 ,  C23C16/52

Abstract: A method of embedding tungsten into a recess formed on a substrate, the method includes forming a lower tungsten layer by supplying a fluorine-free tungsten precursor gas containing a tungsten compound that does not contain fluorine atoms to a top surface of an aluminum oxide layer formed inside the recess, and embedding tungsten into the recess by supplying a tungsten precursor gas containing a tungsten compound that contains fluorine atoms to a top surface of the lower tungsten layer to form a main tungsten layer.

公开(公告)号：US20190041756A1

公开(公告)日：2019-02-07

申请号：US16157461

申请日：2018-10-11

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: G03F7/40 ,  H01L21/027 ,  H01L21/768 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/033 ,  H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  C23C16/02

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US20140331928A1

公开(公告)日：2014-11-13

申请号：US14337603

申请日：2014-07-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinobu KAKIMOTO ,  Shigeru NAKAJIMA ,  Kazuhide HASEBE

IPC: H01L21/67 ,  H01L21/02

CPC classification number: H01L21/67017 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636

Abstract: A method of forming a germanium thin film on an underlying film includes forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas, and forming a germanium thin film on the germanium seed layer using a germane-based gas.

Abstract translation: 在下面的膜上形成锗薄膜的方法包括通过使用氨基锗烷类气体在基底膜的表面上吸收锗来形成锗种子层，并且在锗种子层上使用​​锗烷形成锗薄膜 的气体。

公开(公告)号：US20210115560A1

公开(公告)日：2021-04-22

申请号：US17255990

申请日：2019-05-17

Applicant: TOKYO ELECTRON LIMITED

Inventor： Katsumasa YAMAGUCHI ,  Koji MAEKAWA ,  Takashi SAMESHIMA ,  Shigeru NAKAJIMA

IPC: C23C16/455 ,  C23C16/14 ,  C23C16/40 ,  C23C16/34 ,  H01L21/768

Abstract: A film forming method includes a step of disposing a substrate on which an insulating film is formed in a processing container and forming a base film by repeatedly supplying a Ti-containing gas, an Al-containing gas, and a reaction gas into the processing container under a decompressed atmosphere; and a step of forming a metal layer made of a metal material on the substrate on which the base film is formed.

公开(公告)号：US20190096658A1

公开(公告)日：2019-03-28

申请号：US16202745

申请日：2018-11-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/033 ,  C23C16/02 ,  C23C16/40 ,  H01L21/3213 ,  G03F7/40 ,  H01L21/311 ,  C23C16/455 ,  H01L21/768

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

公开(公告)号：US20130230975A1

公开(公告)日：2013-09-05

申请号：US13780842

申请日：2013-02-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Akinobu KAKIMOTO ,  Shigeru NAKAJIMA ,  Kazuhide HASEBE

IPC: H01L21/02

CPC classification number: H01L21/67017 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636

Abstract: A method of forming a germanium thin film on an underlying film includes forming a germanium seed layer by absorbing a germanium on a surface of the underlying film using an aminogermane-based gas, and forming a germanium thin film on the germanium seed layer using a germane-based gas.

Abstract translation: 在下面的膜上形成锗薄膜的方法包括通过使用氨基锗烷类气体在基底膜的表面上吸收锗来形成锗种子层，并且在锗种子层上使用​​锗烷形成锗薄膜 的气体。

公开(公告)号：US20180179630A1

公开(公告)日：2018-06-28

申请号：US15841084

申请日：2017-12-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Yoshihiro TAKEZAWA ,  Kuniyasu SAKASHITA ,  Shigeru NAKAJIMA

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/44 ,  H01L21/02

CPC classification number: C23C16/45544 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45502 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/4583 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67303 ,  H01L21/67309

Abstract: A film forming apparatus includes: a substrate holding member for vertically holding target substrates at predetermined intervals in multiple stages; a process vessel for accommodating the substrate holding member; a processing gas introduction member each having gas discharge holes which discharge a processing gas for film formation in a direction parallel to each target substrate and introduce the processing gas into the process vessel; an exhaust mechanism for exhausting the interior of the process vessel; and a plurality of gas flow adjustment members installed to face the target substrates, respectively. Each of the gas flow adjustment members adjusts a gas flow of the processing gas discharged horizontally above each of the target substrates from the gas discharge holes of the processing gas introduction member, to be directed from above the respective target substrate located below the respective gas flow adjustment member toward the surface of the respective target substrate.

公开(公告)号：US20180090311A1

公开(公告)日：2018-03-29

申请号：US15713109

申请日：2017-09-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Takahiro MIYAHARA ,  Kazuo YABE ,  Shigeru NAKAJIMA

IPC: H01L21/02 ,  H01L21/3105 ,  H01L21/3213 ,  H01L21/033

CPC classification number: H01L21/02164 ,  H01L21/02112 ,  H01L21/02271 ,  H01L21/0332 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/32139

Abstract: There is provided a boron film forming method which includes forming a boron film on a target substrate by CVD by supplying a boron-containing gas as a film-forming source gas to the target substrate while heating the target substrate to a predetermined temperature, the boron film being made of boron and inevitable impurities and used for a semiconductor device.

公开(公告)号：US20140290577A1

公开(公告)日：2014-10-02

申请号：US14227754

申请日：2014-03-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shigeru NAKAJIMA ,  Hiromi SHIMA ,  Yusuke TACHINO

IPC: C23C16/448

CPC classification number: C23C16/4481 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/52

Abstract: Provided is a method of controlling a gas supply apparatus including a vaporizer, a carrier gas supply source and a gas supply line, the method including: supplying a liquid or sold raw material to a raw material container included in a vaporizer; vaporizing the liquid or sold raw material in the raw material container to produce a raw material gas; exhausting an interior of the raw material container having the liquid or sold raw material; supplying a carrier gas from the carrier gas supply source to the raw material container; and flowing the raw material gas and the carrier gas from the raw material container to a processing chamber in which a substrate to be processed is accommodated via the gas supply line.

Abstract translation: 提供一种控制包括蒸发器，载气供应源和气体供应管线的气体供应装置的方法，所述方法包括：将液体或出售的原料供应到包括在蒸发器中的原料容器; 蒸发原料容器中的液体或出售原料以生产原料气体; 排出具有液体或出售原料的原料容器的内部; 从所述载气供给源供给载气到所述原料容器; 并且将原料气体和载气从原料容器流入经由气体供给管路容纳有待处理基板的处理室。

公开(公告)号：US20130213301A1

公开(公告)日：2013-08-22

申请号：US13848849

申请日：2013-03-22

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuhide HASEBE ,  Shigeru NAKAJIMA ,  Jun OGAWA ,  Hiroki MURAKAMI

IPC: H01L21/027

CPC classification number: H01L21/027 ,  C23C16/02 ,  C23C16/402 ,  C23C16/403 ,  C23C16/45536 ,  G03F7/40 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/32139 ,  H01L21/76816

Abstract: In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

Abstract translation: 在掩模图案形成方法中，在薄膜上形成抗蚀剂膜，通过光刻将抗蚀剂膜加工成具有预定间距的抗蚀剂图案，进行抗蚀剂图案的减薄，并且在薄膜上形成氧化膜 以及通过供给源气体和氧自由基或含氧气体在成膜装置中减肥步骤结束后的抗蚀剂图案。 在掩模图案形成方法中，在成膜装置中连续进行纤维化和氧化膜形成。