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    Film forming apparatus
    1.
    发明授权
    Film forming apparatus 有权

    公开(公告)号：US10685817B2

    公开(公告)日：2020-06-16

    申请号：US15703576

    申请日：2017-09-13

    Applicant: TOPPAN PRINTING CO., LTD.

    Inventor： Masato Kon

    IPC: H01J37/34 ,  H01J37/32 ,  C23C16/54 ,  C23C14/56 ,  C23C14/50 ,  C23C14/35 ,  C23C14/34 ,  C23C14/14 ,  C23C14/00

    Abstract: A film forming apparatus for forming a thin film on a flexible substrate. The film forming apparatus forms a thin film on a flexible substrate under vacuum. The film forming apparatus includes a first zone into which a first gas is introduced and a second zone into which a second gas is introduced in a vacuum chamber. Zone separators have openings through which the flexible substrate passes. The film forming apparatus includes a mechanism that reciprocates the flexible substrate between the zones. Further, the film forming apparatus includes a mechanism that supplies a raw material gas containing metal or silicon to the first zone, and a mechanism that performs sputtering of a material containing metal or silicon as a target material in the second zone.

    Film formation apparatus and film formation method
    2.
    发明授权
    Film formation apparatus and film formation method 有权

    公开(公告)号：US10422037B2

    公开(公告)日：2019-09-24

    申请号：US15457443

    申请日：2017-03-13

    Applicant: TOPPAN PRINTING CO., LTD.

    Inventor： Masato Kon

    IPC: C23C16/54 ,  C23C16/455 ,  C23C16/44 ,  C23C16/52

    Abstract: A film formation apparatus and a film formation method that can homogenize the distribution of gas in each zone in a chamber and improve film formation precision are provided. A film formation apparatus according to one embodiment includes: a chamber which includes a plurality of zones into which gas is introduced, and a plurality of discharge ports that discharge the gas located in at least any of the zones and that can individually adjust an opening state; and a transportation unit that transports a substrate so as to pass through the plurality of the zones in the chamber.

    Mask blank for reflection-type exposure, and mask for reflection-type exposure
    4.
    发明授权
    Mask blank for reflection-type exposure, and mask for reflection-type exposure 有权
    用于反射型曝光的掩模空白，以及用于反射型曝光的掩模

    公开(公告)号：US09442364B2

    公开(公告)日：2016-09-13

    申请号：US14221994

    申请日：2014-03-21

    Applicant: TOPPAN PRINTING CO., LTD.

    Inventor： Yutaka Kodera ,  Yo Sakata ,  Masato Kon

    IPC: G03F1/24 ,  G03F1/40 ,  G03F1/60

    CPC classification number: G03F1/24 ,  G03F1/38 ,  G03F1/40 ,  G03F1/60

    Abstract: A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (11), a multilayer reflective film (12), a protective film (13), an absorption film (14), and a reverse-surface conductive film (15). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO2, TiO2, and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.

    Abstract translation: 提供反射曝光掩模空白和反射曝光掩模，并且掩模能够准确地曝光和转录，而不会使光从电路图案区域以外的区域反射。 反射掩模板在基板（11）上具有多层反射膜（12），保护膜（13），吸收膜（14）和反面导电膜（15）。 背面导电膜由氧化铟锡形成。 基体包含SiO 2，TiO 2和至少一种锰（Mn），铜（Cu），钴（Co），铬（Cr），铁（Fe），银（Ag），镍（Ni） S），硒（Se），金（Au）和钕（Nd）。 通过选择性地剥离反射掩模板上的吸收膜形成电路图案，并通过剥离电路图案周围的多层反射膜，保护膜和吸收膜来形成遮光框来制造反射掩模。

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