公开(公告)号：US20210407771A1

公开(公告)日：2021-12-30

申请号：US16913548

申请日：2020-06-26

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Yohei Yamazawa ,  Chelsea Dubose ,  Barton Lane

IPC: H01J37/32 ,  H01J37/244

Abstract: In accordance with an embodiment, a measurement system includes a sensor circuit configured to provide a voltage sense signal proportional to an electric field sensed by the RF sensor and a current sense signal proportional to a magnetic field sensed by the RF sensor; an analysis circuit comprising a frequency selective demodulator circuit configured to: demodulate the voltage sense signal into a first set of analog demodulated signals according to a set of demodulation frequencies, demodulate the current sense signal into a second set of analog demodulated signals according to the set of demodulation frequencies, and determine a phase shift between the voltage sense signal and the current sense signal for at least one frequency of the set of demodulation frequencies; and analog-to-digital converters configured to receive the first and second sets of analog demodulated signals.

公开(公告)号：US11094507B2

公开(公告)日：2021-08-17

申请号：US16517779

申请日：2019-07-22

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Chelsea DuBose ,  Justin Moses ,  Kazuki Moyama ,  Kazushi Kaneko

IPC: H03F3/68 ,  H01J37/32 ,  H03F3/21 ,  H03F1/02 ,  H03F1/56

Abstract: Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.

公开(公告)号：US20210027992A1

公开(公告)日：2021-01-28

申请号：US16517779

申请日：2019-07-22

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Chelsea DuBose ,  Justin Moses ,  Kazuki Moyama ,  Kazushi Kaneko

IPC: H01J37/32 ,  H03F3/21 ,  H03F1/02 ,  H03F1/56

Abstract: Embodiments are described herein for power generation systems and methods that use quadrature splitters and combiners to facilitate plasma stability and control. For one embodiment, a quadrature splitter receives an input signal and generates a first and second signals as outputs with the second signal being ninety degrees out of phase with respect to the first signal. Two amplifiers then generate a first and second amplified signals. A quadrature combiner receives the first and second amplified signals and generates a combined amplified signal that represents re-aligned versions of the first and second amplified signals. The power amplifiers can be combined into a system to generate a high power output to a processing chamber. Further, detectors can generate measurements used to monitor and control power generation. The power amplifiers, system, and methods provide significant advantages for high-power generation delivered to process chambers for plasma generation during plasma processing.

公开(公告)号：US20190228950A1

公开(公告)日：2019-07-25

申请号：US15880435

申请日：2018-01-25

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Megan Doppel ,  Kazuki Moyama ,  Chelsea DuBose ,  Justin Moses

IPC: H01J37/32 ,  H01L21/3065

Abstract: Embodiments of method and system for controlling plasma performance are described. In an embodiment a method may include supplying power at a first set of power parameters to a plasma chamber. Additionally, the method may include forming plasma within the plasma chamber using the first set of power parameters. The method may also include measuring power coupling to the plasma at the first set of power parameters. Also, the method may include supplying power at a second set of power parameters to the plasma chamber. The method may additionally include measuring power coupling to the plasma at the second set of power parameters to the plasma. The method may also include adjusting the first set of power parameters based, at least in part, on the measuring of the power coupling at the second set of power parameters.

公开(公告)号：US09934974B2

公开(公告)日：2018-04-03

申请号：US14309106

申请日：2014-06-19

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Merritt Funk ,  Lee Chen

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/268 ,  H01J37/32

CPC classification number: H01L21/268 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32266

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

公开(公告)号：US20160218011A1

公开(公告)日：2016-07-28

申请号：US15006739

申请日：2016-01-26

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Merritt Funk

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32715 ,  H01J37/32733

Abstract: This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a plasma chamber that may generate plasma to remove monolayer(s) of the substrate. The plasma process may include a two-step process that uses a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transitions to a second plasma or moves the substrate to a different location within the first plasma that has a higher ion energy. In one specific embodiment, the transition between the first and second plasma may be enabled by changing the position of the substrate relative to the source electrode with no or relatively small changes in plasma process conditions.

Abstract translation: 本公开涉及等离子体处理系统和用于微电子基板的高精度蚀刻的方法。 该系统可以包括可以产生等离子体以去除衬底的单层的等离子体室。 等离子体工艺可以包括使用第一等离子体在微电子衬底的表面上形成薄吸附层的两步法。 当系统转变到第二等离子体或者将衬底移动到具有较高离子能量的第一等离子体内的不同位置时，可以去除吸附层。 在一个具体实施例中，可以通过在等离子体工艺条件下没有或相对较小的改变来改变衬底相对于源电极的位置来实现第一和第二等离子体之间的转变。

公开(公告)号：US20160212833A1

公开(公告)日：2016-07-21

申请号：US15082465

申请日：2016-03-28

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H05H1/46 ,  H01J37/32 ,  H01F41/06

CPC classification number: H05H1/46 ,  C23F1/00 ,  H01F41/06 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/3065 ,  Y10T29/49016

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract translation: 表面波等离子体（SWP）源通过例如径向线缝隙天线将微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 ICP源设置在SWP源和衬底之间，并以低功率通电，对于300mm晶片，例如在约25瓦特，小于100瓦特。 ICP源通过外围电偶极线圈耦合能量以减少电容耦合。

公开(公告)号：US20140374025A1

公开(公告)日：2014-12-25

申请号：US14309106

申请日：2014-06-19

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Merritt Funk ,  Lee Chen

IPC: H01L21/67

CPC classification number: H01L21/268 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32266

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

公开(公告)号：US20140273485A1

公开(公告)日：2014-09-18

申请号：US14206518

申请日：2014-03-12

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Zhiying Chen

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02

CPC classification number: H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

Abstract translation: 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 等离子体处理系统可以包括等离子体室，其可以使用等离子体接收和处理衬底，用于蚀刻衬底，掺杂衬底或在衬底上沉积膜。 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 在一个实施例中，等离子体密度可以通过在处理期间降低离子到室壁的离子速率来控制。 这可以包括偏置等离子体室中的双电极环组件以改变室壁区域和体积等离子体区域之间的电位差。

公开(公告)号：US20140265846A1

公开(公告)日：2014-09-18

申请号：US14209695

申请日：2014-03-13

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Radha Sundararajan ,  Merritt Funk

IPC: H01L21/263

CPC classification number: H01J37/32357 ,  H01J37/32422 ,  H01J37/32596

Abstract: A method of treating a substrate with plasma is described. In particular, the method includes disposing a substrate in a plasma processing system, disposing a hollow cathode plasma source including at least one hollow cathode within the plasma processing system, and disposing a grid between the cathode outlet of the plurality of hollow cathodes and the substrate. The method further includes electrically coupling the grid to electrical ground, coupling a voltage to the at least one hollow cathode relative to electrical ground, and generating plasma in hollow cathode by ion-induced secondary electron emission of energetic electrons that move along a first trajectory, and diffusing lower energy electrons along a second trajectory across a first region of the interior space between the cathode outlet and the grid, through the grid, and into a second region of the interior space in fluid contact with the substrate.

Abstract translation: 描述了用等离子体处理衬底的方法。 特别地，该方法包括在等离子体处理系统中设置衬底，在等离子体处理系统内设置包括至少一个中空阴极的中空阴极等离子体源，并且在多个中空阴极的阴极出口和衬底之间设置栅极 。 该方法还包括将电网电耦合到电接地，将电压相对于电接地耦合​​到至少一个空心阴极，以及通过离子诱导的沿着第一轨迹移动的能量电子的二次电子发射在空心阴极中产生等离子体， 并且沿着第二轨迹穿过阴极出口和格栅之间的内部空间的第一区域，穿过网格，并且进一步流体地与衬底接触的内部空间的第二区域中扩散较低能量的电子。