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    Diluent for Preparing Analytical Sample
    3.
    发明申请
    Diluent for Preparing Analytical Sample 审中-公开
    稀释剂用于制备分析样品

    公开(公告)号：US20120015388A1

    公开(公告)日：2012-01-19

    申请号：US13166575

    申请日：2011-06-22

    申请人： Takeshi Takagi ,  Toshikatsu Sakai ,  Chiaki Miyamoto ,  Takefumi Asami ,  Tatsuo Kamata ,  Takuya Yotani ,  Takayuki Oka

    发明人： Takeshi Takagi ,  Toshikatsu Sakai ,  Chiaki Miyamoto ,  Takefumi Asami ,  Tatsuo Kamata ,  Takuya Yotani ,  Takayuki Oka

    IPC分类号： C12Q1/54 ,  C12M1/40

    CPC分类号： C12Q1/006 ,  G01N33/66 ,  G01N33/723 ,  G01N33/726

    摘要： The ionic strength of a diluent for preparing an analytical sample is set to be 0.06 to 0.16. The analytical sample prepared by using the diluent having the ionic strength within this range can be subjected to both for analyzing a first object in a test sample by electrode method and for analyzing a second object in the test sample by liquid chromatography method, and high-precision measurement can be attained. The analytical sample is especially useful for preparing a sample for measurement used both for measuring glucose concentration in a blood sample by enzyme electrode method and for measuring glycohemoglobin concentration in the blood sample by liquid chromatography method.

    摘要翻译： 用于制备分析样品的稀释剂的离子强度设定为0.06至0.16。 通过使用离子强度在该范围内的稀释剂制备的分析样品可以通过电极法分析测试样品中的第一个物体，并通过液相色谱法分析测试样品中的第二个物体， 可以进行精度测量。 分析样品特别适用于制备用于通过酶电极法测量血液样品中的葡萄糖浓度并通过液相色谱法测量血液样品中的糖血红蛋白浓度的测量样品。

    ANALYZING DEVICE AND METHOD FOR CONTROLLING SAME
    5.
    发明申请
    ANALYZING DEVICE AND METHOD FOR CONTROLLING SAME 有权
    分析装置及其控制方法

    公开(公告)号：US20110185797A1

    公开(公告)日：2011-08-04

    申请号：US13122059

    申请日：2009-10-02

    申请人： Toshikatsu Sakai ,  Akira Sezaki ,  Takeshi Takagi

    发明人： Toshikatsu Sakai ,  Akira Sezaki ,  Takeshi Takagi

    IPC分类号： G01N30/16 ,  G01N33/00

    CPC分类号： G01N30/20 ,  G01N30/18 ,  G01N30/8658 ,  G01N30/8665 ,  G01N2030/042 ,  G01N2030/201 ,  G01N2030/202 ,  G01N2030/207

    摘要： An analyzing device includes a feeder connected to a container in which a sample is contained for sucking the sample from the container and feeding the sample, and a controller for performing control for feeding from the feeder to a measurer. In measuring the sample, the controller performs control so that results of a plurality of times of measurement are obtained with respect to the single container in which the sample is contained, without changing the container. This arrangement allows quick accuracy check.

    摘要翻译： 分析装置包括连接到容器的进料器，在该容器中容纳样品以从容器吸取样品并进料样品;以及控制器，用于进行从进料器进给到测量器的控制。 在测量样品时，控制器执行控制，使得相对于容纳样品的单个容器获得多次测量的结果，而不改变容器。 这种安排允许快速准确的检查。

    Method for driving variable resistance element, and nonvolatile memory device
    6.
    发明授权
    Method for driving variable resistance element, and nonvolatile memory device 有权
    用于驱动可变电阻元件的方法和非易失性存储器件

    公开(公告)号：US09142289B2

    公开(公告)日：2015-09-22

    申请号：US13883075

    申请日：2012-06-11

    申请人： Takeshi Takagi ,  Koji Katayama

    发明人： Takeshi Takagi ,  Koji Katayama

    IPC分类号： G11C11/21 ,  G11C13/00

    CPC分类号： G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/15 ,  G11C2213/32

    摘要： A driving method for driving a variable resistance element and a nonvolatile memory device, which achieves stable storage operation. In a low resistance write process, a low resistance writing voltage pulse having the negative polarity is applied once to a variable resistance layer included in a variable resistance element while in a high resistance write process, a high resistance writing voltage pulse having the positive polarity is applied more than twice to the same variable resistance layer. Here, when a voltage value of one of the high resistance writing voltage pulses is VH1 and a voltage value of the other high resistance writing voltage pulse applied subsequently is VH2, VH1>VH2 is satisfied.

    摘要翻译： 用于驱动可变电阻元件和非易失性存储器件的驱动方法，其实现稳定的存储操作。 在低电阻写入处理中，具有负极性的低电阻写入电压脉冲在包括在可变电阻元件中的可变电阻层上施加一次，而在高电阻写入处理中，具有正极性的高电阻写入电压脉冲是 施加两倍以上的同一可变电阻层。 这里，当高电阻写入电压脉冲之一的电压值为VH1，随后施加的另一个高电阻写入电压脉冲的电压值为VH2时，满足VH1> VH2。

    Nonvolatile memory element comprising a resistance variable element and a diode
    7.
    发明授权
    Nonvolatile memory element comprising a resistance variable element and a diode 有权
    非易失性存储元件包括电阻可变元件和二极管

    公开(公告)号：US08796660B2

    公开(公告)日：2014-08-05

    申请号：US12375881

    申请日：2007-09-21

    申请人： Takeshi Takagi ,  Takumi Mikawa

    发明人： Takeshi Takagi ,  Takumi Mikawa

    IPC分类号： H01L29/02 ,  H01L47/00 ,  H01L29/04 ,  H01L29/06 ,  H01L29/08 ,  H01L31/0352 ,  H01L45/00 ,  H01L27/24 ,  H01L27/10 ,  H01L21/00 ,  G11C11/00

    CPC分类号： H01L45/04 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/1683

    摘要： A nonvolatile memory element (20) of the present invention comprises a resistance variable element (14) and a diode (18) which are formed on a substrate (10) such that the resistance variable element (14) has a resistance variable layer (11) sandwiched between a lower electrode (12) and an upper electrode (13), and the diode (18) which is connected in series with the resistance variable element (14) in the laminating direction and has an insulating layer or semiconductor layer (15) sandwiched between a first electrode (16) at the lower side and a second electrode (17) at the upper side. The resistance variable layer (11) is embedded in a first contact hole (21) formed on the lower electrode (12). A first area (22) where insulating layer or semiconductor layer (15) of the diode (18) is in contact with a first electrode (16) of the diode (18) is larger than at least one of a second area (23) where the resistance variable layer (11) is in contact with the upper electrode (13) and a third area (24) where the resistance variable layer (11) is in contact with the lower electrode (12).

    摘要翻译： 本发明的非易失性存储元件（20）包括形成在基板（10）上的电阻可变元件（14）和二极管（18），使得电阻可变元件（14）具有电阻变化层（11 ）和位于下电极（12）和上电极（13）之间的二极管（18），以及与电阻可变元件（14）在层叠方向上串联连接并具有绝缘层或半导体层（15）的二极管 ）夹在下侧的第一电极（16）和上侧的第二电极（17）之间。 电阻变化层（11）嵌入形成在下电极（12）上的第一接触孔（21）中。 二极管（18）的绝缘层或半导体层（15）与二极管（18）的第一电极（16）接触的第一区域（22）大于第二区域（23）中的至少一个， 其中电阻变化层（11）与上电极（13）接触，电阻变化层（11）与下电极（12）接触的第三区域（24）。

    Measuring apparatus for measuring a physical property of a sample
    8.
    发明授权
    Measuring apparatus for measuring a physical property of a sample 有权
    用于测量样品的物理性质的测量装置

    公开(公告)号：US08712702B2

    公开(公告)日：2014-04-29

    申请号：US13167585

    申请日：2011-06-23

    申请人： Takeshi Takagi ,  Koji Okumura ,  Tatsuo Kamata

    发明人： Takeshi Takagi ,  Koji Okumura ,  Tatsuo Kamata

    IPC分类号： G06F19/00 ,  G01N1/10

    CPC分类号： G01N1/38 ,  B01L3/502715 ,  B01L2200/10 ,  B01L2300/0654 ,  B01L2300/0816 ,  B01L2300/087 ,  B01L2300/0877 ,  B01L2300/0883 ,  B01L2300/0887 ,  B01L2400/0406 ,  G01N27/3271 ,  G01N2021/054 ,  G01N2035/1018

    摘要： A measuring apparatus for measuring a predetermined physical property of a liquid measuring sample comprises a preparing unit in which a plurality of materials including at least a liquid material are mixed; a supply route which supplies the liquid material to the preparing unit; a withdrawing unit which withdraws the measuring sample from the preparing unit into the supply route, the measuring sample being prepared to contain the liquid material supplied to the preparing unit via the supply route; and a measuring unit which measures the predetermined physical property of the measuring sample withdrawn into the supply route by the withdrawing unit.

    摘要翻译： 用于测量液体测量样品的预定物理性能的测量装置包括其中混合至少包含液体材料的多种材料的制备单元; 将液体材料供给到制备单元的供给路径; 所述取出单元将所述测量样品从所述准备单元抽出到所述供给路径中，所述测量样品准备容纳经由所述供给路径供给到所述准备单元的液体材料; 以及测量单元，其测量由所述抽出单元抽出到所述供给路径中的所述测量样本的预定物理属性。

    Nonvolatile memory device and method for programming the same
    9.
    发明授权
    Nonvolatile memory device and method for programming the same 有权
    非易失性存储器件及其编程方法

    公开(公告)号：US08565004B2

    公开(公告)日：2013-10-22

    申请号：US13379463

    申请日：2011-06-28

    申请人： Mitsuteru Iijima ,  Takeshi Takagi ,  Koji Katayama

    发明人： Mitsuteru Iijima ,  Takeshi Takagi ,  Koji Katayama

    IPC分类号： G11C11/00

    CPC分类号： G11C13/003 ,  G11C11/5685 ,  G11C13/0007 ,  G11C13/0064 ,  G11C13/0069 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146

    摘要： A method for programming a nonvolatile memory device according to the present invention includes a step of detecting an excessively low resistance cell from among a plurality of memory cells (11) (S101); a step of changing the resistance value of a load resistor (121) to a second resistance value smaller than a first resistance value (S103); and a step of causing, by applying a voltage pulse to a series circuit including the excessively low resistance cell and the load resistor (121) having the second resistance value, a variable resistance element (105) included in the excessively low resistance cell to shift to a second high resistance state having a resistance value greater than that of the first low resistance state (S104).

    摘要翻译： 根据本发明的非易失性存储器件的编程方法包括从多个存储单元（11）中检测过低电阻单元的步骤（S101）; 将负载电阻器（121）的电阻值改变为小于第一电阻值的第二电阻值的步骤（S103）; 以及通过对包括过低电阻单元的串联电路和具有第二电阻值的负载电阻器（121）施加电压脉冲，使包含在过低电阻单元中的可变电阻元件（105）移位 到具有大于第一低电阻状态的电阻值的第二高电阻状态（S104）。