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    Method for fabricating an integrated device
    7.
    发明授权
    Method for fabricating an integrated device 有权
    一种集成装置的制造方法

    公开(公告)号：US08936960B1

    公开(公告)日：2015-01-20

    申请号：US13933135

    申请日：2013-07-02

    Applicant: United Microelectronics Corp.

    Inventor： Kuan-Yu Wang ,  Hui-Min Wu ,  Kun-Che Hsieh

    IPC: H01L21/00 ,  H01L21/4763 ,  H01L21/44 ,  B81C1/00

    CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C2203/0742

    Abstract: A method for fabricating an integrated device includes the following steps. First, a multi-layered structure is formed on a substrate, wherein the multi-layered structure is embedded in a lower isolation layer. Then, a bottom conductive pattern and a top conductive pattern are formed on a top surface of the lower isolation layer, wherein the top conductive pattern is on a top surface of the bottom conductive pattern. Afterwards, portions of the top conductive pattern are removed to expose portions of the bottom conductive pattern. Subsequently, an upper isolation layer is deposited on the lower isolation layer so that the upper isolation layer can be in direct contact with the portions of the bottom conductive pattern. Finally, portions of the lower isolation layer and the upper isolation layer are removed so as to expose portions of the substrate.

    Abstract translation: 一种用于制造集成装置的方法包括以下步骤。 首先，在基板上形成多层结构，其中多层结构被嵌入在下隔离层中。 然后，在下隔离层的顶表面上形成底部导电图案和顶部导电图案，其中顶部导电图案位于底部导电图案的顶表面上。 之后，顶部导电图案的部分被去除以暴露底部导电图案的部分。 随后，上隔离层沉积在下隔离层上，使得上隔离层可以与底导电图案的部分直接接触。 最后，去除下隔离层和上隔离层的部分以露出基板的部分。

    Micro-electro-mechanical system structure and method for forming the same
    8.
    发明授权
    Micro-electro-mechanical system structure and method for forming the same 有权

    公开(公告)号：US10457546B2

    公开(公告)日：2019-10-29

    申请号：US15921203

    申请日：2018-03-14

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Yuan-Sheng Lin ,  Weng-Yi Chen ,  Kuan-Yu Wang ,  Chih-Wei Liu

    IPC: B81C1/00 ,  B81B3/00 ,  H04R19/00 ,  H04R19/04

    Abstract: A micro-electro-mechanical (MEMS) structure and a method for forming the same are disclosed. The MEMS structure includes a sacrificial layer, a lower dielectric film, an upper dielectric film, a plurality of through holes and a protective film. The sacrificial layer comprises an opening. The lower dielectric film is on the sacrificial layer. The upper dielectric film is on the lower dielectric film. The plurality of through holes passes through the lower dielectric film and the upper dielectric film. The protective film covers side walls of the upper dielectric film and the lower dielectric film and a film interface between the lower dielectric film and the upper dielectric film.

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