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    Method for improving performance of a substrate carrier
    1.
    发明授权
    Method for improving performance of a substrate carrier 有权

    公开(公告)号：US10262883B2

    公开(公告)日：2019-04-16

    申请号：US14991962

    申请日：2016-01-10

    Applicant: Veeco Instruments Inc.

    Inventor： Joshua Mangum ,  William E. Quinn

    IPC: H01L21/687 ,  H01L21/673 ,  H01L21/66 ,  H01L21/02 ,  C23C16/44

    Abstract: A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.

    DENSITY-MATCHING ALKYL PUSH FLOW FOR VERTICAL FLOW ROTATING DISK REACTORS
    2.
    发明申请
    DENSITY-MATCHING ALKYL PUSH FLOW FOR VERTICAL FLOW ROTATING DISK REACTORS 有权
    用于垂直流动旋转盘反应器的密度匹配推压流

    公开(公告)号：US20150225875A1

    公开(公告)日：2015-08-13

    申请号：US14618519

    申请日：2015-02-10

    Applicant: Veeco Instruments Inc.

    Inventor： Bojan Mitrovic ,  Alexander I. Gurary ,  William E. Quinn ,  Eric A. Armour

    IPC: C30B25/14 ,  C30B25/16 ,  C23C16/458 ,  C30B25/12 ,  C23C16/455 ,  C23C16/52

    CPC classification number: C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

    Abstract: In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

    Abstract translation: 在用于在衬底或其它CVD反应器系统上生长外延层的旋转盘式反应器中，在与盘的旋转轴线不同的径向距离处的气体入口处朝向衬底的气体具有基本上相同的气体流速/速度， 每个入口气体密度相同。 朝向远离轴的盘的部分的气体可以包括比指向盘的靠近轴的部分的气体更高的反应气体浓度，使得与轴的不同距离处的衬底表面的部分基本上接收 采用相同量的每单位面积的反应气体，以及在与旋转轴线不同的径向距离处具有不同相对分子量的载气的组合基本上使反应器各区域中的气体密度相等。 该系统可以在多个气体入口处的组合或载气施加，多个入口处的载体和反应物气体的组合，并且当提供至少两种不同分子量的气体时，可以与任意大量的气体一起使用 。 在反应器内实现线性流动模式，避免层流再循环区域，并允许外延层在衬底上的均匀沉积和生长。

    CHEMICAL VAPOR DEPOSITION WITH ENERGY INPUT
    3.
    发明申请
    CHEMICAL VAPOR DEPOSITION WITH ENERGY INPUT 审中-公开
    化学蒸气沉积与能量输入

    公开(公告)号：US20140318453A1

    公开(公告)日：2014-10-30

    申请号：US14330433

    申请日：2014-07-14

    Applicant: Veeco Instruments Inc.

    Inventor： Joshua Mangum ,  Eric A. Armour ,  William E. Quinn

    IPC: C23C16/511

    CPC classification number: C23C16/511 ,  C23C16/303 ,  C23C16/45551 ,  C23C16/483 ,  C30B25/105 ,  C30B29/403 ,  C30B29/406

    Abstract: Methods of depositing compound semiconductors onto substrates are disclosed, including directing gaseous reactants into a reaction chamber containing the substrates, selectively supplying energy to one of the gaseous reactants in order to impart sufficient energy to activate that reactant but insufficient to decompose the reactant, and then decomposing the reactant at the surface of the substrate in order to react with the other reactants. The preferred energy source is microwave or infrared radiation, and reactors for carrying out these methods are also disclosed.

    Abstract translation: 公开了将化合物半导体沉积到基底上的方法，包括将气态反应物导入含有底物的反应室中，选择性地向气体反应物之一供应能量，以赋予足够的能量来活化该反应物但不足以分解反应物，然后 在基材的表面分解反应物以与其它反应物反应。 优选的能量源是微波或红外辐射，还公开了用于实施这些方法的反应器。

    Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
    4.
    发明授权
    Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems 有权

    公开(公告)号：US10167571B2

    公开(公告)日：2019-01-01

    申请号：US13840164

    申请日：2013-03-15

    Applicant: Veeco Instruments, Inc.

    Inventor： Sandeep Krishnan ,  William E. Quinn ,  Jeffery S. Montgomery ,  Joshua Mangum ,  Lukas Urban

    IPC: C30B25/12 ,  B23P19/04 ,  H01L21/687 ,  C23C16/458

    Abstract: A wafer carrier and methods of making the same for use in a system for growing epitaxial layers on one or more wafers by chemical vapor deposition. The wafer carrier includes wafer retention pockets recessed in its body. A thermally-insulating spacer is situated at least partially in the at least one wafer retention pocket and arranged to maintain a spacing between the peripheral wall surface and the wafer, the spacer being constructed from a material having a thermal conductivity less than a thermal conductivity of the wafer carrier such that the spacer limits heat conduction from portions of the wafer carrier body to the wafer. The wafer carrier further includes a spacer retention feature that engages with the spacer and includes a surface oriented to prevent centrifugal movement of the spacer when subjected to rotation about the central axis.

    Linear Cluster Deposition System
    5.
    发明申请
    Linear Cluster Deposition System 审中-公开
    线性簇沉积系统

    公开(公告)号：US20160160387A1

    公开(公告)日：2016-06-09

    申请号：US14997180

    申请日：2016-01-15

    Applicant: Veeco Instruments Inc.

    Inventor： William E. Quinn ,  Alexander Gurary ,  Ajit Paranjpe ,  Maria D. Ferreira ,  Roger P. Fremgen ,  Eric A. Armour

    IPC: C30B25/02 ,  C30B25/10 ,  H01L21/677 ,  C30B25/14 ,  C30B29/40 ,  H01L21/02 ,  C30B25/08 ,  C30B25/12

    Abstract: A linear cluster deposition system includes a plurality of reaction chambers positioned in a linear horizontal arrangement. First and second reactant gas manifolds are coupled to respective process gas input port of each of the reaction chambers. An exhaust gas manifold having a plurality of exhaust gas inputs is coupled to the exhaust gas output port of each of the plurality of reaction chambers. A substrate transport vehicle transports at least one of a substrate and a substrate carrier that supports at least one substrate into and out of substrate transfer ports of each of the reaction chambers. At least one of a flow rate of process gas into the process gas input port of each of the reaction chambers and a pressure in each of the reaction chambers being chosen so that process conditions are substantially the same in at least two of the reaction chambers.

    Abstract translation: 线性簇沉积系统包括以线性水平布置定位的多个反应室。 第一和第二反应气体歧管连接到每个反应室的相应工艺气体输入口。 具有多个排气输入的废气歧管与多个反应室中的每一个的废气输出端口连接。 基板输送车辆将基板和基板载体中的至少一个输送到每个反应室的基板输送口中并至少支撑至少一个基板。 选择每个反应室的工艺气体进入工艺气体输入口的流量和每个反应室中的压力中的至少一个，使得工艺条件在至少两个反应室中基本相同。

    Gas Injection System For Chemical Vapor Deposition Using Sequenced Valves
    7.
    发明申请
    Gas Injection System For Chemical Vapor Deposition Using Sequenced Valves 审中-公开
    使用顺序阀进行化学气相沉积的气体注入系统

    公开(公告)号：US20160168710A1

    公开(公告)日：2016-06-16

    申请号：US15050728

    申请日：2016-02-23

    Applicant: Veeco Instruments, Inc.

    Inventor： William E. Quinn ,  Eric A. Armour

    IPC: C23C16/52 ,  C23C16/18 ,  C23C16/455

    CPC classification number: C23C16/52 ,  C23C16/18 ,  C23C16/45561 ,  C23C16/45574

    Abstract: A gas injection system for a chemical vapor deposition system includes a gas manifold comprising a plurality of valves where each of the plurality of valves has an input that is coupled to a process gas source and an output for providing process gas. Each of a plurality of gas injectors has an input that is coupled to the output of one of the plurality of valves and an output that is positioned in one of a plurality of zones in a chemical vapor deposition reactor. A controller having a plurality of outputs where each of the plurality of outputs is coupled to a control input of one of the plurality of valves. The controller instructs at least some of the plurality of valves to open at predetermined times to provide a desired gas flow to each of the plurality of zones in the chemical vapor deposition reactor.

    Abstract translation: 用于化学气相沉积系统的气体注入系统包括气体歧管，其包括多个阀，其中多个阀中的每一个具有耦合到处理气体源的输入和用于提供处理气体的输出。 多个气体喷射器中的每一个具有耦合到多个阀中的一个的输出端的输入端和位于化学气相沉积反应器的多个区域之一中的输出端。 具有多个输出的控制器，其中所述多个输出中的每一个输出耦合到所述多个阀之一的控制输入。 控制器指示多个阀中的至少一些阀在预定时间打开以向化学气相沉积反应器中的多个区域中的每一个提供期望的气流。

    Method For Improving Performance Of A Substrate Carrier
    8.
    发明申请
    Method For Improving Performance Of A Substrate Carrier 审中-公开

    公开(公告)号：US20160126123A1

    公开(公告)日：2016-05-05

    申请号：US14991962

    申请日：2016-01-10

    Applicant: Veeco Instruments Inc.

    Inventor： Joshua Mangum ,  William E. Quinn

    IPC: H01L21/673 ,  C23C16/44

    CPC classification number: H01L21/67383 ,  C23C16/44 ,  H01L21/02104 ,  H01L21/67366 ,  H01L21/68735 ,  H01L21/68771 ,  H01L22/12 ,  H01L22/20

    Abstract: A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.

    Method for improving performance of a substrate carrier
    9.
    发明授权
    Method for improving performance of a substrate carrier 有权

    公开(公告)号：US09269565B2

    公开(公告)日：2016-02-23

    申请号：US13920845

    申请日：2013-06-18

    Applicant: Veeco Instruments Inc.

    Inventor： Joshua Mangum ,  William E. Quinn

    IPC: H01L21/66 ,  H01L21/02

    CPC classification number: H01L21/67383 ,  C23C16/44 ,  H01L21/02104 ,  H01L21/67366 ,  H01L21/68735 ,  H01L21/68771 ,  H01L22/12 ,  H01L22/20

    Abstract: A method of modifying a substrate carrier to improve process performance includes depositing material or fabricating devices on a substrate supported by a substrate carrier. A parameter of layers deposited on the substrate is then measured as a function of their corresponding positions on the substrate carrier. The measured parameter of at least some devices fabricated on the substrate or a property of the deposited layers is related to a physical characteristic of substrate carrier to obtain a plurality of physical characteristics of the substrate carrier corresponding to a plurality of positions on the substrate carrier. The physical characteristic of the substrate carrier is then modified at one or more of the plurality of corresponding positions on the substrate carrier to obtain desired parameters of the deposited layers or fabricated devices as a function of position on the substrate carrier.

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