公开(公告)号：US09947830B2

公开(公告)日：2018-04-17

申请号：US15422216

申请日：2017-02-01

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Sheng-hsien Hsu ,  Gong Chen ,  Su-hui Lin ,  Yu-chieh Huang ,  Chen-ke Hsu

IPC: H01L33/00 ,  H01L33/22 ,  H01L33/32 ,  H01L33/06 ,  H01L33/16

CPC classification number: H01L33/22 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/16 ,  H01L33/32 ,  H01L2933/0058

Abstract: A patterned sapphire substrate has a first surface and a second surface opposite to each other; the connection zone between first protrusion portions has no C surface (i.e. (0001) surface); and the patterned sapphire substrate may have no C surface on the growth surface to reduce the threading dislocation density of the GaN epitaxial material on the sapphire substrate.

公开(公告)号：US09190572B2

公开(公告)日：2015-11-17

申请号：US14718026

申请日：2015-05-20

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Lingfeng Yin ,  Suhui Lin ,  Jiansen Zheng ,  Lingyuan Hong ,  Chuangui Liu ,  Yide Ou ,  Gong Chen

IPC: H01L33/42 ,  C23C14/35 ,  H01L33/38 ,  H01L33/00 ,  C23C14/58 ,  C23C14/02

CPC classification number: H01L33/42 ,  C23C14/024 ,  C23C14/086 ,  C23C14/24 ,  C23C14/35 ,  C23C14/58 ,  C23C14/5806 ,  H01L33/005 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066

Abstract: A light emitting diode includes: a substrate; a light-emitting epitaxial layer, from bottom to up, laminated by semiconductor material layers of a first confinement layer, a light-emitting layer and a second confinement layer over the substrate; a current blocking layer over partial region of the light-emitting epitaxial layer; a transparent conducting structure over the current blocking layer that extends to the light-emitting epitaxial layer surface and is divided into a light-emitting region and a non-light-emitting region, in which, the non-light-emitting region corresponds to the current blocking layer with thickness larger than that of the light-emitting region, thus forming a good ohmic contact between this structure and the light-emitting epitaxial layer and reducing light absorption; and a P electrode over the non-light-emitting region of the transparent conducting structure, which guarantees current spreading performance and reduces working voltage and light absorption.

Abstract translation: 发光二极管包括：基板; 从底部到顶部的发光外延层，通过基板上的第一限制层，发光层和第二限制层的半导体材料层层叠; 在发光外延层的部分区域上的电流阻挡层; 在电流阻挡层上延伸到发光外延层表面并被分成发光区域和非发光区域的透明导电结构，其中非发光区域对应于 电流阻挡层的厚度大于发光区域的电流阻挡层，从而在该结构和发光外延层之间形成良好的欧姆接触并降低光吸收; 以及在透明导电结构的非发光区域上的P电极，其保证电流扩展性能并降低工作电压和光吸收。

公开(公告)号：US10211367B2

公开(公告)日：2019-02-19

申请号：US15607461

申请日：2017-05-27

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Chia-hung Chang ,  Gong Chen ,  Su-hui Lin ,  Kang-wei Peng ,  Sheng-hsien Hsu ,  Chuan-gui Liu ,  Xiao-xiong Lin ,  Yu Zhou ,  Jing-jing Wei ,  Jing Huang

IPC: H01L33/00 ,  H01L33/02 ,  H01L27/15 ,  H01L33/10 ,  H01L33/60 ,  H01L33/20

Abstract: An LED fabrication method includes forming release holes by focusing a laser at the substrate back surface, and forming stealth laser-blast areas by focusing a laser inside the substrate on positions corresponding to the release holes; communicating the release holes with the stealth laser-blast areas to release impurities generated during forming of the stealth laser-blast areas from the substrate through the release holes, thereby avoiding low external quantum efficiency resulting from adherence of the released material to the side wall of the stealth laser-blast areas. By focusing on a position with 10 μm˜40 μm inward from the substrate back side, adjusting laser energy and frequency to burn holes inside the substrate to penetrate and expose the substrate back surface, thereby effectively removing by-products, and reducing light absorption by such by-products, light extraction from a side wall of the LED can also be improved and light extraction efficiency is enhanced.

公开(公告)号：US09337406B2

公开(公告)日：2016-05-10

申请号：US14641383

申请日：2015-03-07

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Lingfeng Yin ,  Suhui Lin ,  Jiansen Zheng ,  Chuangui Liu ,  Yide Ou ,  Gong Chen

IPC: H01L29/15 ,  H01L33/62 ,  H01L33/38 ,  H01L33/42 ,  H01L33/00 ,  H01L33/08 ,  H01L33/32

CPC classification number: H01L33/62 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: A GaN-based LED with a current spreading structure, the LED including a substrate, a light-emitting epitaxial layer over the substrate, and a current spreading structure over the light-emitting epitaxial layer. The current spreading structure includes a transparent electrode spreading bar, and a metal electrode spreading bar attached to the side wall of the transparent electrode spreading bar. The current spreading structure can improve the current spreading effect, reducing or eliminating of electrode shading, improving luminous efficiency of the LED, and avoid or reduce high voltage (Vf).

Abstract translation: 具有电流扩散结构的GaN基LED，LED包括衬底，衬底上的发光外延层以及在发光外延层上的电流扩散结构。 电流扩展结构包括透明电极扩散棒和附着在透明电极扩散棒的侧壁上的金属电极扩散杆。 电流扩展结构可以提高电流扩散效果，减少或消除电极阴影，提高LED的发光效率，避免或降低高电压（Vf）。

公开(公告)号：US12294037B2

公开(公告)日：2025-05-06

申请号：US17450630

申请日：2021-10-12

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Gong Chen ,  Su-Hui Lin ,  Sheng-Hsien Hsu ,  Kang-Wei Peng ,  Ling-Yuan Hong ,  Minyou He ,  Chia-Hung Chang

IPC: H01L33/00 ,  H01L33/24

Abstract: A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.