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    Resonator of hybrid laser diode
    1.
    发明授权
    Resonator of hybrid laser diode 失效
    混合激光二极管谐振器

    公开(公告)号：US07995625B2

    公开(公告)日：2011-08-09

    申请号：US12499069

    申请日：2009-07-07

    Applicant: Young Ahn Leem ,  Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

    Inventor： Young Ahn Leem ,  Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

    IPC: H01S3/098 ,  H01S3/03 ,  H01S3/082

    CPC classification number: H01S5/026 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/125

    Abstract: Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.

    Abstract translation: 提供了一种混合激光二极管的谐振器。 谐振器包括：包括混合波导，多模波导和单模波导串联连接的半导体层的基板; 复合半导体波导，设置在半导体层的混合波导上，在化合物半导体波导的一端具有锥形耦合结构，锥形耦合结构部分地与多模波导重叠; 以及设置在单模波导的一端的反射部。 多模波导具有比混合波导窄的宽度，并且单模波导具有比多模波导窄的宽度。

    MASK PATTERN FOR SELECTIVE AREA GROWTH OF SEMICONDUCTOR LAYER AND SELECTIVE AREA GROWTH METHOD USING THE MASK PATTERN FOR SEMICONDUCTOR LAYER
    2.
    发明申请
    MASK PATTERN FOR SELECTIVE AREA GROWTH OF SEMICONDUCTOR LAYER AND SELECTIVE AREA GROWTH METHOD USING THE MASK PATTERN FOR SEMICONDUCTOR LAYER 审中-公开
    半导体层的选择区生长掩模图和使用半导体层的掩模图案的选择区生长方法

    公开(公告)号：US20100081225A1

    公开(公告)日：2010-04-01

    申请号：US12517357

    申请日：2007-10-16

    Applicant: Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

    Inventor： Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

    IPC: H01L33/30 ,  B05C11/00 ,  H01L21/20

    CPC classification number: H01L21/02543 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639

    Abstract: Provided is a mask pattern for selective area growth of a semiconductor layer and a selective area growth method for a semiconductor layer for independently controlling a growth rate and a strain of the semiconductor layer. The selective area growth method includes: forming a plurality of pairs of first mask patterns, the first mask patterns in each pair including a first open area therebetween, the first open area having a width that is wider than a distance causing overgrowth of the semiconductor layer, the pairs of the first mask patterns repeatedly arranged with a period P therebetween; wherein controlling a growth rate and a strain of the semiconductor layer formed on the first open area by adjusting the period P.

    Abstract translation: 提供了用于半导体层的选择性区域生长的掩模图案和用于独立地控制半导体层的生长速率和应变的半导体层的选择区域生长方法。 选择区域生长方法包括：形成多对第一掩模图案，每对中的第一掩模图案包括其间的第一开口区域，第一开口区域的宽度比导致半导体层过度生长的距离宽 ，所述第一掩模图案对以其间的周期P重复布置; 其中通过调整周期P来控制形成在第一开放区域上的半导体层的生长速率和应变。

    High-power, broad-band, superluminescent diode and method of fabricating the same
    4.
    发明授权
    High-power, broad-band, superluminescent diode and method of fabricating the same 有权
    大功率，宽带，超发光二极管及其制造方法

    公开(公告)号：US07745836B2

    公开(公告)日：2010-06-29

    申请号：US12118543

    申请日：2008-05-09

    Applicant: Jung-Ho Song ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

    Inventor： Jung-Ho Song ,  Ki-Soo Kim ,  Young-Ahn Leem ,  Gyung-Ock Kim

    IPC: H01L29/16

    CPC classification number: H01L33/0045 ,  H01L33/02

    Abstract: Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.

    Abstract translation: 提供了具有高光功率和宽波长带的超发光二极管及其制造方法。 超发光二极管包括：至少一个高光限制因子（HOCF）区域; 以及具有比HOCF区域更低的光限制因子的至少一个低光限制因子（LOCF）区域。 该方法包括通过选择性区域生长方法获得HOCF区域和LOCF区域中的光限制因子的差异，所述选择性区域生长方法使用根据暴露衬底的开口的宽度差的薄层的沉积厚度差。

    OPTICAL COUPLER AND ACTIVE OPTICAL MODULE COMPRISING THE SAME
    7.
    发明申请
    OPTICAL COUPLER AND ACTIVE OPTICAL MODULE COMPRISING THE SAME 审中-公开
    光耦合器和包含该光耦合器的主动光学模块

    公开(公告)号：US20110141758A1

    公开(公告)日：2011-06-16

    申请号：US12949447

    申请日：2010-11-18

    Applicant: Hong-Seok SEO ,  Joon Tae Ahn ,  Bong Je Park ,  Dae Kon Oh ,  Jung-Ho Song

    Inventor： Hong-Seok SEO ,  Joon Tae Ahn ,  Bong Je Park ,  Dae Kon Oh ,  Jung-Ho Song

    IPC: H01S3/00 ,  G02B6/26

    CPC classification number: H01S3/094019 ,  G02B6/4214 ,  H01S3/0675 ,  H01S3/094007 ,  H01S3/0941 ,  H01S3/11

    Abstract: Provided are an optical coupler, which can improve miniaturization and integration, and an active optical module comprising the same. The optical coupler comprises a hollow optical block having a through hole formed to pass an optical fiber therethrough. The hollow optical block comprises at least one incidence plane, at least one internal reflection plane, and at least one tapering region. The incidence plane is disposed at the bottom of the hollow optical block, which is parallel to the through hole, to incident-transmit light. The internal reflection plane is disposed at the top of the hollow optical block, which is opposite to the incidence plane, to reflect the light, which is received from the incidence plane, into the hollow optical block. The tapering region is configured to concentrate the light on the optical fiber in the through hole. The tapering region is formed such that the outer diameter of the hollow optical block decreases away from the internal reflection plane and the incidence plane.

    Abstract translation: 提供了可以改善小型化和集成的光耦合器，以及包括该光耦合器的有源光学模块。 光耦合器包括中空的光学块，该中空光学块具有形成为使光纤通过的通孔。 中空光学块包括至少一个入射平面，至少一个内部反射平面和至少一个锥形区域。 入射平面设置在平行于通孔的中空光学块的底部入射透射光。 内反射面设置在与入射面相反的中空光学块的顶部，以将从入射平面接收的光反射到中空光学块中。 锥形区域被配置为将光聚集在通孔中的光纤上。 锥形区域形成为使得中空光学块的外径从内反射面和入射面减小。

    System and method for accessing node of private network
    8.
    发明授权
    System and method for accessing node of private network 有权
    用于接入私网节点的系统和方法

    公开(公告)号：US07221671B2

    公开(公告)日：2007-05-22

    申请号：US09901486

    申请日：2001-07-10

    Applicant: Min-Seop Jeong ,  Jung-Ho Song

    Inventor： Min-Seop Jeong ,  Jung-Ho Song

    IPC: H04L12/66

    CPC classification number: H04L61/2514 ,  H04L29/12009 ,  H04L29/12367 ,  H04L29/12377 ,  H04L29/12924 ,  H04L61/2517 ,  H04L61/6063

    Abstract: A system for accessing a node of a private network includes an assigning portion for assigning external port values to respective network nodes based on information collected from the network nodes of the private network, and storing the assigned external port values; an exchanging portion for exchanging the external port values of the respective network nodes of private networks; and an address converting portion for converting the external port values into corresponding private IP addresses and internal port values when a network node of one private network accesses another network node of another private network by using the external port values of another network node of another private network. Accordingly, a network node of a private network without a global IP address becomes accessible.

    Abstract translation: 用于访问私有网络的节点的系统包括：分配部分，用于基于从专用网络的网络节点收集的信息将外部端口值分配给各个网络节点，并存储所分配的外部端口值; 用于交换专用网络的各个网络节点的外部端口值的交换部分; 以及地址转换部分，当一个专用网络的网络节点通过使用另一个专用网络的另一个网络节点的外部端口值来访问另一个专用网络的另一个网络节点时，将外部端口值转换为相应的专用IP地址和内部端口值 。 因此，没有全局IP地址的专用网络的网络节点变得可访问。

    Methods of programming multi-level cell nonvolatile memory devices and devices so operating
    9.
    发明授权
    Methods of programming multi-level cell nonvolatile memory devices and devices so operating 有权
    编程多级单元非易失性存储器件和器件的操作方法

    公开(公告)号：US09343158B2

    公开(公告)日：2016-05-17

    申请号：US14165835

    申请日：2014-01-28

    Applicant: Jung-Ho Song ,  Su-Yong Kim ,  Sang-Won Hwang

    Inventor： Jung-Ho Song ,  Su-Yong Kim ,  Sang-Won Hwang

    IPC: G11C11/34 ,  G11C16/14 ,  G11C11/56 ,  G11C16/04 ,  G11C16/34

    CPC classification number: G11C16/14 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3459

    Abstract: To program in a nonvolatile memory device include a plurality of memory cells that are programmed into multiple states through at least two program steps, a primary program is performed from an erase level to a first target level with respect to the memory cells coupled to a selected word line A preprogram is performed from the erase level to a preprogram level in association with the primary program with respect to the memory cells coupled to the selected word line, where the preprogram level is larger than the erase level and smaller than the first target level A secondary program is performed from the preprogram level to a second target level with respect to the preprogrammed memory cells coupled to the selected word line.

    Abstract translation: 在非易失性存储器件中编程包括通过至少两个程序步骤被编程成多个状态的多个存储器单元，相对于耦合到所选择的存储单元，从擦除电平到第一目标电平执行主程序 字线相对于耦合到所选择的字线的存储器单元与原始程序相关联地从擦除电平执行预编程电平，其中预编程电平大于擦除电平并小于第一目标电平 相对于耦合到所选字线的预编程存储器单元，从预编程级到第二目标级执行次程序。

    Nonvolatile memory device and method of reading data in nonvolatile memory device
    10.
    发明授权
    Nonvolatile memory device and method of reading data in nonvolatile memory device 有权
    非易失性存储器件和非易失性存储器件中的数据读取方法

    公开(公告)号：US08760919B2

    公开(公告)日：2014-06-24

    申请号：US13598892

    申请日：2012-08-30

    Applicant: Jung-Ho Song ,  Jin-Yub Lee ,  Jae-Woo Im ,  Seung-Jae Lee ,  Sang-So Park

    Inventor： Jung-Ho Song ,  Jin-Yub Lee ,  Jae-Woo Im ,  Seung-Jae Lee ,  Sang-So Park

    IPC: G11C11/56 ,  G11C16/04

    CPC classification number: G11C11/56 ,  G11C11/5642 ,  G11C16/04 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3404 ,  G11C2211/56

    Abstract: A method is provided for reading data in a nonvolatile memory device. The method includes performing a first read operation on multiple multi-level memory cells (MLCs), performing a first sensing operation on at least one flag cell corresponding to the MLCs, selectively performing a second read operation on the MLCs based on a result of the first sensing operation, and performing a second sensing operation on the at least one flag cell when the second read operation is performed. Read data is output based on results of the first read operation and the first sensing operation when the second read operation is not performed, and the read data is output based on result of the first read operation, the first sensing operation, the second read operation and the second sensing operation when the second read operation is performed. The read data corresponds to programmed data in the MLCs.

    Abstract translation: 提供了一种用于在非易失性存储器件中读取数据的方法。 该方法包括：对多个多电平存储器单元（MLC），在对应于MLC中的至少一个标志单元，基于所述结果选择性地执行上的MLC的第二读取操作执行第一读出操作的第一次读操作 第一感测操作，并且当执行第二读取操作时对所述至少一个标志单元执行第二感测操作。 在不执行第二读取操作时，基于第一读取操作和第一感测操作的结果输出读取数据，并且基于第一读取操作，第一感测操作，第二读取操作的结果来输出读取数据 以及执行第二读取操作时的第二感测操作。 读取数据对应于MLC中的编程数据。

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