公开(公告)号：US20100209641A1

公开(公告)日：2010-08-19

申请号：US12768541

申请日：2010-04-27

申请人： Zhenguo LIU ,  Sanjay Mehta ,  Xiaoyan Huang ,  David A. Schiraldi

发明人： Zhenguo LIU ,  Sanjay Mehta ,  Xiaoyan Huang ,  David A. Schiraldi

IPC分类号： B32B1/02 ,  C08L77/00

CPC分类号： C08K3/24 ,  B29B2911/1402 ,  B29B2911/14026 ,  B29B2911/14033 ,  B29B2911/1404 ,  B29B2911/14106 ,  B29B2911/14133 ,  B29B2911/1416 ,  B29C49/0005 ,  B29C49/06 ,  B29K2067/00 ,  B65D1/0207 ,  C08G63/6886 ,  C08K5/098 ,  C08K5/42 ,  C08L67/02 ,  C08L77/06 ,  Y10T428/13 ,  Y10T428/1352 ,  Y10T428/139 ,  C08L2666/20

摘要： The present invention comprises a blend of polyester and a partially aromatic polyamide with an ionic compatibilizer and a cobalt salt. This blend can be processed into a container that has both active and passive oxygen barrier and carbon dioxide barrier properties at an improved color and clarity than containers known in the art. The partially aromatic polyamide is preferably meta-xylylene adipamide. The ionic compatibilizer is preferably 5-sodiumsulfoisophthalic acid or 5-zinesulfoisophthalic acid, or their dialkyl esters such as the dimethyl ester (SIM) and glycol ester (SIPEG). The cobalt salt is selected form the class of cobalt acetate, cobalt carbonate, cobalt chloride, cobalt hydroxide, cobalt naphthenate, cobalt oleate, cobalt linoleate, cobalt octoate, cobalt stearate, cobalt nitrate, cobalt phosphate, cobalt sulfate, cobalt (ethylene glycolate), or mixtures of two or more of these. The partially aromatic polyamide is present in a range from about 1 to about 10 wt. % of said composition. The ionic compatibilizer is present in a range from about 0.1 to about 2.0 mol-% of said composition. The cobalt salt is present in a range from about 20 to about 500 ppm of said composition.

摘要翻译： 本发明包括聚酯和部分芳族聚酰胺与离子增容剂和钴盐的共混物。 与现有技术中已知的容器相比，该混合物可以加工成具有主动和被动氧气阻隔性和二氧化碳阻隔性能的容器，其颜色和透明度得到改善。 部分芳族聚酰胺优选为间二甲苯基己二酰胺。 离子增容剂优选为5-钠磺基间苯二甲酸或5-锌磺基间苯二甲酸或其二烷基酯，如二甲酯（SIM）和乙二醇酯（SIPEG）。 钴盐选自乙酸钴，碳酸钴，氯化钴，氢氧化钴，环烷酸钴，油酸钴，亚油酸钴，辛酸钴，硬脂酸钴，硝酸钴，磷酸钴，硫酸钴，钴（乙醇酸）等。 ，或这些中的两种或更多种的混合物。 部分芳族聚酰胺的存在量为约1至约10重量％。 ％的所述组合物。 离子相容剂的存在量为所述组合物的约0.1至约2.0mol％。 钴盐以所述组合物的约20至约500ppm的范围存在。

公开(公告)号：US07919159B2

公开(公告)日：2011-04-05

申请号：US10569614

申请日：2004-08-05

申请人： Zhenguo Liu ,  Sanjay Mehta ,  Xiaoyan Huang ,  David A. Schiraldi

发明人： Zhenguo Liu ,  Sanjay Mehta ,  Xiaoyan Huang ,  David A. Schiraldi

IPC分类号： C08K5/00 ,  B32B27/34 ,  B32B27/08 ,  B65D23/00 ,  B65D23/02

CPC分类号： C08K3/24 ,  B29B2911/1402 ,  B29B2911/14026 ,  B29B2911/14033 ,  B29B2911/1404 ,  B29B2911/14106 ,  B29B2911/14133 ,  B29B2911/1416 ,  B29C49/0005 ,  B29C49/06 ,  B29K2067/00 ,  B65D1/0207 ,  C08G63/6886 ,  C08K5/098 ,  C08K5/42 ,  C08L67/02 ,  C08L77/06 ,  Y10T428/13 ,  Y10T428/1352 ,  Y10T428/139 ,  C08L2666/20

摘要： The present invention comprises a blend of polyester and a partially aromatic polyamide with an ionic compatibilizer and a cobalt salt. This blend can be processed into a container that has both active and passive oxygen barrier and carbon dioxide barrier properties at an improved color and clarity than containers known in the art. The partially aromatic polyamide is preferably meta-xylylene adipamide. The ionic compatibilizer is preferably 5-sodiumsulfoisophthalic acid or 5-zincsulfoisophthalic acid, or their dialkyl esters such as the dimethyl ester (SIM) and glycol ester (SIPEG). The cobalt salt is selected form the class of cobalt acetate, cobalt carbonate, cobalt chloride, cobalt hydroxide, cobalt naphthenate, cobalt oleate, cobalt linoleate, cobalt octoate, cobalt stearate, cobalt nitrate, cobalt phosphate, cobalt sulfate, cobalt (ethylene glycolate), or mixtures of two or more of these. The partially aromatic polyamide is present in a range from about 1 to about 10 wt. % of said composition. The ionic compatibilizer is present in a range from about 0.1 to about 2.0 mol-% of said composition. The cobalt salt is present in a range from about 20 to about 500 ppm of said composition.

摘要翻译： 本发明包括聚酯和部分芳族聚酰胺与离子增容剂和钴盐的共混物。 与现有技术中已知的容器相比，该混合物可以加工成具有主动和被动氧气阻隔性和二氧化碳阻隔性能的容器，其颜色和透明度得到改善。 部分芳族聚酰胺优选为间二甲苯基己二酰胺。 离子增容剂优选为5-钠磺基间苯二甲酸或5-锌磺基间苯二甲酸，或其二烷基酯如二甲酯（SIM）和乙二醇酯（SIPEG）。 钴盐选自乙酸钴，碳酸钴，氯化钴，氢氧化钴，环烷酸钴，油酸钴，亚油酸钴，辛酸钴，硬脂酸钴，硝酸钴，磷酸钴，硫酸钴，钴（乙醇酸）等。 ，或这些中的两种或更多种的混合物。 部分芳族聚酰胺的存在量为约1至约10重量％。 ％的所述组合物。 离子相容剂的存在量为所述组合物的约0.1至约2.0mol％。 钴盐以所述组合物的约20至约500ppm的范围存在。

公开(公告)号：US20060246245A1

公开(公告)日：2006-11-02

申请号：US10569614

申请日：2004-08-05

申请人： Zhenguo Liu ,  Sanjay Mehta ,  Xiaoyan Huang ,  David Schiraldi

发明人： Zhenguo Liu ,  Sanjay Mehta ,  Xiaoyan Huang ,  David Schiraldi

IPC分类号： B65D1/02

CPC分类号： C08K3/24 ,  B29B2911/1402 ,  B29B2911/14026 ,  B29B2911/14033 ,  B29B2911/1404 ,  B29B2911/14106 ,  B29B2911/14133 ,  B29B2911/1416 ,  B29C49/0005 ,  B29C49/06 ,  B29K2067/00 ,  B65D1/0207 ,  C08G63/6886 ,  C08K5/098 ,  C08K5/42 ,  C08L67/02 ,  C08L77/06 ,  Y10T428/13 ,  Y10T428/1352 ,  Y10T428/139 ,  C08L2666/20

摘要： The present invention comprises a blend of polyester and a partially aromatic polyamide with an ionic compatibilizer and a cobalt salt. This blend can be processed into a container that has both active and passive oxygen barrier and carbon dioxide barrier properties at an improved color and clarity than containers known in the art. The partially aromatic polyamide is preferably meta-xylylene adipamide. The ionic compatibilizer is preferably 5-sodiumsulfoisophthalic acid or 5-zincsulfoisophthalic acid, or their dialkyl esters such as the dimethyl ester (SIM) and glycol ester (SIPEG). The cobalt salt is selected form the class of cobalt acetate, cobalt carbonate, cobalt chloride, cobalt hydroxide, cobalt naphthenate, cobalt oleate, cobalt linoleate, cobalt octoate, cobalt stearate, cobalt nitrate, cobalt phosphate, cobalt sulfate, cobalt (ethylene glycolate), or mixtures of two or more of these. The partially aromatic polyamide is present in a range from about 1 to about 10 wt. % of said composition. The ionic compatibilizer is present in a range from about 0.1 to about 2.0 mol-% of said composition. The cobalt salt is present in a range from about 20 to about 500 ppm of said composition.

摘要翻译： 本发明包括聚酯和部分芳族聚酰胺与离子增容剂和钴盐的共混物。 与现有技术中已知的容器相比，该混合物可以加工成具有主动和被动氧气阻隔性和二氧化碳阻隔性能的容器，其颜色和透明度得到改善。 部分芳族聚酰胺优选为间二甲苯基己二酰胺。 离子增容剂优选为5-钠磺基间苯二甲酸或5-锌磺基间苯二甲酸，或其二烷基酯如二甲酯（SIM）和乙二醇酯（SIPEG）。 钴盐选自乙酸钴，碳酸钴，氯化钴，氢氧化钴，环烷酸钴，油酸钴，亚油酸钴，辛酸钴，硬脂酸钴，硝酸钴，磷酸钴，硫酸钴，钴（乙醇酸）等。 ，或这些中的两种或更多种的混合物。 部分芳族聚酰胺的存在量为约1至约10重量％。 ％的所述组合物。 离子相容剂的存在量为所述组合物的约0.1至约2.0mol％。 钴盐以所述组合物的约20至约500ppm的范围存在。

公开(公告)号：US08790991B2

公开(公告)日：2014-07-29

申请号：US13011546

申请日：2011-01-21

申请人： Jason E. Cummings ,  Balasubramanian S. Haran ,  Hemanth Jagannathan ,  Sanjay Mehta

发明人： Jason E. Cummings ,  Balasubramanian S. Haran ,  Hemanth Jagannathan ,  Sanjay Mehta

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/06

CPC分类号： H01L21/76224 ,  H01L21/02107 ,  H01L21/823481 ,  H01L21/823878 ,  H01L29/0649 ,  H01L29/513 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A shallow trench isolation region is provided in which void formation is substantially or totally eliminated therefrom. The shallow trench isolation mitigates active shorts between two active regions of a semiconductor substrate. The shallow trench isolation region includes a bilayer liner which is present on sidewalls and a bottom wall of a trench that is formed in a semiconductor substrate. The bilayer liner of the present disclosure includes, from bottom to top, a shallow trench isolation liner, e.g., a semiconductor oxide and/or nitride, and a high k liner, e.g., a dielectric material having a dielectric constant that is greater than silicon oxide.

摘要翻译： 提供浅沟槽隔离区域，其中空隙形成基本上或完全从其中消除。 浅沟槽隔离减轻半导体衬底的两个有源区域之间的有源短路。 浅沟槽隔离区域包括存在于形成在半导体衬底中的沟槽的侧壁和底壁上的双层衬垫。 本公开的双层衬垫包括从底部到顶部的浅沟槽隔离衬垫，例如半导体氧化物和/或氮化物，以及高k衬里，例如介电常数大于硅的介电材料 氧化物。

公开(公告)号：US20130264641A1

公开(公告)日：2013-10-10

申请号：US13442168

申请日：2012-04-09

申请人： Kangguo Cheng ,  Bruce B. Doris ,  Balasubramanian S. Haran ,  Sanjay Mehta ,  Stefan Schmitz

发明人： Kangguo Cheng ,  Bruce B. Doris ,  Balasubramanian S. Haran ,  Sanjay Mehta ,  Stefan Schmitz

IPC分类号： H01L27/088 ,  H01L21/762 ,  H01L21/336

CPC分类号： H01L21/84 ,  H01L21/76283 ,  H01L27/1203

摘要： A thin BOX ETSOI device with robust isolation and method of manufacturing. The method includes providing a wafer with at least a pad layer overlying a first semiconductor layer overlying an oxide layer overlying a second semiconductor layer, wherein the first semiconductor layer has a thickness of 10 nm or less. The process continues with etching a shallow trench into the wafer, extending partially into the second semiconductor layer and forming first spacers on the sidewalls of said shallow trench. After spacer formation, the process continues by etching an area directly below and between the first spacers, exposing the underside of the first spacers, forming second spacers covering all exposed portions of the first spacers, wherein the pad oxide layer is removed, and forming a gate structure over the first semiconductor wafer.

摘要翻译： 薄型BOX ETSOI器件，具有强大的隔离性和制造方法。 该方法包括提供晶片至少一覆盖在覆盖第二半导体层的氧化物层上的第一半导体层的焊盘层，其中第一半导体层具有10nm或更小的厚度。 该过程继续蚀刻到晶片中的浅沟槽，部分地延伸到第二半导体层中并且在所述浅沟槽的侧壁上形成第一间隔物。 在间隔物形成之后，该过程继续蚀刻直接在第一间隔物下面和之间的区域，暴露第一间隔物的下侧，形成覆盖第一间隔物的所有暴露部分的第二间隔区，其中除去氧化垫层， 第一半导体晶片上的栅极结构。

公开(公告)号：US08476743B2

公开(公告)日：2013-07-02

申请号：US13228857

申请日：2011-09-09

申请人： Son Van Nguyen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Sanjay Mehta

发明人： Son Van Nguyen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Sanjay Mehta

IPC分类号： H01L23/58 ,  H01L21/31 ,  C23C8/54 ,  B05D5/12

CPC分类号： H01L21/02112 ,  H01B3/12 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53252 ,  H01L23/53276 ,  H01L29/1054 ,  H01L29/1606 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/4983 ,  H01L29/78648 ,  H01L2924/0002 ,  H01L2924/00

摘要： A carbon-rich carbon boron nitride dielectric film having a dielectric constant of equal to, or less than 3.6 is provided that can be used as a component in various electronic devices. The carbon-rich carbon boron nitride dielectric film has a formula of CxByNz wherein x is 35 atomic percent or greater, y is from 6 atomic percent to 32 atomic percent and z is from 8 atomic percent to 33 atomic percent.

摘要翻译： 提供具有等于或小于3.6的介电常数的富碳碳氮化硼介电膜，其可用作各种电子器件中的组分。 富碳碳氮化硼电介质膜具有C x B y N z的化学式，其中x为35原子％以上，y为6原子％〜32原子％，z为8原子％〜33原子％。

公开(公告)号：US20130032945A1

公开(公告)日：2013-02-07

申请号：US13197325

申请日：2011-08-03

申请人： Qinghuang Lin ,  Sanjay Mehta ,  Hosadurga Shobha

发明人： Qinghuang Lin ,  Sanjay Mehta ,  Hosadurga Shobha

IPC分类号： H01L23/522 ,  H01L21/768

CPC分类号： H01L23/5222 ,  H01L21/768 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76807 ,  H01L21/76816 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L23/53295 ,  H01L2221/1026 ,  H01L2924/0002 ,  H01L2924/00

摘要： An interconnect structure and methods for making the same include sidewall portions of an interlevel dielectric layer. The sidewall portions have a width less than a minimum feature size for a given lithographic technology and the width is formed by a thickness of the interlevel dielectric layer when conformally formed on vertical surfaces of a mandrel. The sidewall portions form spaced-apart openings. Conductive structures fill the spaced-apart openings and are separated by the sidewall portions to form single damascene structures.

公开(公告)号：US20130015512A1

公开(公告)日：2013-01-17

申请号：US13605260

申请日：2012-09-06

申请人： Balasubramanian S. Haran ,  Hemanth Jagannathan ,  Sivananda K. Kanakasabapathy ,  Sanjay Mehta

发明人： Balasubramanian S. Haran ,  Hemanth Jagannathan ,  Sivananda K. Kanakasabapathy ,  Sanjay Mehta

IPC分类号： H01L29/78

CPC分类号： H01L29/66772 ,  H01L29/6653 ,  H01L29/78621

摘要： A gate dielectric is patterned after formation of a first gate spacer by anisotropic etch of a conformal dielectric layer to minimize overetching into a semiconductor layer. In one embodiment, selective epitaxy is performed to sequentially form raised epitaxial semiconductor portions, a disposable gate spacer, and raised source and drain regions. The disposable gate spacer is removed and ion implantation is performed into exposed portions of the raised epitaxial semiconductor portions to form source and drain extension regions. In another embodiment, ion implantation for source and drain extension formation is performed through the conformal dielectric layer prior to an anisotropic etch that forms the first gate spacer. The presence of the raised epitaxial semiconductor portions or the conformation dielectric layer prevents complete amorphization of the semiconductor material in the source and drain extension regions, thereby enabling regrowth of crystalline source and drain extension regions.

公开(公告)号：US20130015509A1

公开(公告)日：2013-01-17

申请号：US13183666

申请日：2011-07-15

申请人： Balasubramanian S. Haran ,  Hemanth Jagannathan ,  Sivananda K. Kanakasabapathy ,  Sanjay Mehta

发明人： Balasubramanian S. Haran ,  Hemanth Jagannathan ,  Sivananda K. Kanakasabapathy ,  Sanjay Mehta

IPC分类号： H01L29/772 ,  H01L21/336

CPC分类号： H01L29/66772 ,  H01L29/6653 ,  H01L29/78621

摘要： A gate dielectric is patterned after formation of a first gate spacer by anisotropic etch of a conformal dielectric layer to minimize overetching into a semiconductor layer. In one embodiment, selective epitaxy is performed to sequentially form raised epitaxial semiconductor portions, a disposable gate spacer, and raised source and drain regions. The disposable gate spacer is removed and ion implantation is performed into exposed portions of the raised epitaxial semiconductor portions to form source and drain extension regions. In another embodiment, ion implantation for source and drain extension formation is performed through the conformal dielectric layer prior to an anisotropic etch that forms the first gate spacer. The presence of the raised epitaxial semiconductor portions or the conformation dielectric layer prevents complete amorphization of the semiconductor material in the source and drain extension regions, thereby enabling regrowth of crystalline source and drain extension regions.

摘要翻译： 在通过各向异性蚀刻共形介电层形成第一栅极间隔物之后对栅极电介质进行构图，以最小化过蚀刻到半导体层中。 在一个实施例中，执行选择性外延以顺序地形成凸起的外延半导体部分，一次性栅极间隔物和升高的源极和漏极区域。 去除一次性栅极间隔物，并将离子注入进行到隆起的外延半导体部分的暴露部分中以形成源极和漏极延伸区域。 在另一个实施例中，用于源极和漏极延伸形成的离子注入在形成第一栅极间隔物的各向异性蚀刻之前通过保形介电层进行。 升高的外延半导体部分或构象介电层的存在防止了源极和漏极延伸区域中的半导体材料的完全非晶化，从而使结晶源极和漏极延伸区域再生长。

公开(公告)号：US20120018730A1

公开(公告)日：2012-01-26

申请号：US12841408

申请日：2010-07-22

申请人： Sivananda K. Kanakasabapathy ,  Hemanth Jagannathan ,  Sanjay Mehta

发明人： Sivananda K. Kanakasabapathy ,  Hemanth Jagannathan ,  Sanjay Mehta

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L27/0886 ,  H01L21/82 ,  H01L29/66795 ,  H01L29/7847 ,  H01L29/785

摘要： Techniques are discloses to apply an external stress onto the source/drain semiconductor fin sidewall areas and latch the same onto the semiconductor fin before releasing the sidewalls for subsequent salicidation and contact formation. In particular, the present disclosure provides methods in which selected portions of a semiconductor are subjected to an amorphizing ion implantation which disorients the crystal structure of the selected portions of the semiconductor fins, relative to portions of the semiconductor fin that is beneath a gate stack and encapsulated with various liners. At least one stress liner is formed and then stress memorization occurs by performing a stress latching annealing. During this anneal, recrystallization of the disoriented crystal structure occurs. The at least one stress liner is removed and thereafter merging of the semiconductor fins in the source/drain regions is performed.

摘要翻译： 公开了一种技术来将外部应力施加到源极/漏极半导体鳍状物侧壁区域上并将其锁定到半导体鳍片上，然后释放侧壁以用于随后的盐化和接触形成。 特别地，本公开提供了一种方法，其中半导体的选定部分经受非晶化离子注入，其相对于在栅极堆叠下面的半导体鳍片的部分使半导体鳍片的选定部分的晶体结构脱落， 用各种衬垫封装。 形成至少一个应力衬垫，然后通过进行应力闭锁退火而发生应力记忆。 在该退火期间，发生错位取向晶体结构的重结晶。 去除至少一个应力衬垫，然后执行源极/漏极区域中的半导体鳍片的合并。