公开(公告)号：US20080032244A1

公开(公告)日：2008-02-07

申请号：US11866577

申请日：2007-10-03

申请人： Yukio TANIGUCHI ,  Masakiyo Matsumura

发明人： Yukio TANIGUCHI ,  Masakiyo Matsumura

IPC分类号： G03F7/26

CPC分类号： H01L21/02675 ,  B23K26/0613 ,  B23K26/073 ,  G02B27/0927 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/66757

摘要： A crystallization method which generates a crystallized semiconductor film by irradiating at least one of a polycrystal semiconductor film and an amorphous semiconductor film with light beams having a light intensity distribution with an inverse peak pattern that a light intensity is increased toward the periphery from an inverse peak at which the light intensity is minimum, wherein a light intensity value a (standardized value) in the inverse peak when a maximum value of the light intensity in the light intensity distribution with the inverse peak pattern is standardized as 1 is set to 0.2≦value α≦0.8.

摘要翻译： 一种结晶化方法，其通过用具有光强度分布的光束照射多晶半导体膜和非晶半导体膜中的至少一种而产生结晶半导体膜，所述光束具有从反向峰值向周边增加的光强度的逆峰值图案 其中光强度最小的光强度值，其中当具有反峰值图案的光强度分布中的光强度的最大值被标准化为1时，逆峰值中的光强度值a（标准化值）被设置为0.2 < 值α<= 0.8。

公开(公告)号：US20050145845A1

公开(公告)日：2005-07-07

申请号：US11041413

申请日：2005-01-25

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L21/324 ,  B23K26/04 ,  B23K26/06 ,  B23K26/067 ,  B23K26/073 ,  B23K26/42 ,  H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L21/77 ,  H01L29/04 ,  H01L29/786 ,  H01L29/76 ,  H01L21/84

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

公开(公告)号：US20100239782A1

公开(公告)日：2010-09-23

申请号：US12792226

申请日：2010-06-02

申请人： Atsushi SASAKI ,  Kazufumi Azuma ,  Tetsuya Ide ,  Yukihiko Nakata

发明人： Atsushi SASAKI ,  Kazufumi Azuma ,  Tetsuya Ide ,  Yukihiko Nakata

IPC分类号： C23C16/513

CPC分类号： H01J37/32192 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/3244

摘要： An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel.

摘要翻译： 绝缘膜由等离子体膜形成装置形成，该等离子体膜形成装置包括具有电磁波入射面F的真空容器，在该真空容器中形成的第一气体注入孔以及在远离电磁波的真空容器中制造的第二气体注入孔 入射面F比第一个气体注入孔。 例如，从距离电磁波入射面F的距离小于10mm的位置引入第一气体到真空容器中。 从与电磁波入射面的距离为10mm以上的位置向真空容器引入包含有机硅化合物的第二气体。

公开(公告)号：US20090284839A1

公开(公告)日：2009-11-19

申请号：US12509269

申请日：2009-07-24

申请人： Takashi Ono ,  Kazufumi Azuma ,  Masakiyo Matsumura

发明人： Takashi Ono ,  Kazufumi Azuma ,  Masakiyo Matsumura

IPC分类号： G02B27/12

CPC分类号： G02B3/005 ,  G02B3/0062 ,  G02B3/06 ,  G02B27/0927 ,  G02B27/0961

摘要： An optical device comprises a first cylindrical lens array in which a plurality of first lens segments each having a first radius of curvature and a first width so as to divide laser light into a plurality of light components are arranged, and a plurality of second lens segments each having a second radius of curvature and a second width, and provided in at least one position of the first cylindrical lens array so as to be arranged between adjacent first lens segments.

摘要翻译： 光学装置包括：第一柱面透镜阵列，其中多个第一透镜段各自具有第一曲率半径和第一宽度以将激光分成多个光分量，并且多个第二透镜段 每个具有第二曲率半径和第二宽度，并且设置在第一柱面透镜阵列的至少一个位置，以便布置在相邻的第一透镜段之间。

公开(公告)号：US20090194769A1

公开(公告)日：2009-08-06

申请号：US12422762

申请日：2009-04-13

申请人： Masato Hiramatsu ,  Hiroyuki Ogawa ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Hiroyuki Ogawa ,  Masakiyo Matsumura

IPC分类号： H01L29/786 ,  H01L21/268 ,  B32B7/00 ,  H01L21/336

CPC分类号： H01L21/02686 ,  B23K26/066 ,  H01L21/0268 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  Y10T428/265

摘要： A crystallizing method of causing a phase shifter to phase-modulate a laser beam whose wavelength is 248 nm or 300 nm or more from an excimer laser unit into a laser beam with a light intensity profile having a plurality of inverted triangular peak patterns in cross section and of irradiating the pulse laser beam onto a substrate to be crystallized for crystallization. The substrate to be crystallized is such that one or more silicon oxide films which present absorption properties to the laser beam and differ in the relative proportions of Si and O are provided on a laser beam incident face.

摘要翻译： 使移相器将来自准分子激光单元的波长为248nm或300nm以上的激光束相位调制成激光束的结晶化方法，其具有横截面为多个倒三角形峰值图案的光强度分布 并将脉冲激光束照射到待结晶的基板上以进行结晶。 要结晶的衬底使得在激光束入射面上提供一个或多个对激光束具有吸收特性并且Si和O的相对比例不同的氧化硅膜。

公开(公告)号：US20090038536A1

公开(公告)日：2009-02-12

申请号：US12243426

申请日：2008-10-01

申请人： Yukio Taniguchi ,  Masayuki Jyumonji ,  Hiroyuki Ogawa

发明人： Yukio Taniguchi ,  Masayuki Jyumonji ,  Hiroyuki Ogawa

IPC分类号： C30B1/02

CPC分类号： C30B13/24 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012 ,  Y10T117/1016

摘要： A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution.

摘要翻译： 第一光调制元件通过调制入射的第一光束的强度，将具有第一光强度分布的光束的非单晶物质照射在非单晶物质上，从而熔化物质。 第二光调制元件通过调制入射的第二光束的强度，从而使该物质熔化，从而将具有第二光强分布的光束照射在物质上。 照射系统使得具有第二光强分布的光束在物质通过具有第一光强度分布的光束的照射而部分熔融的时段内进入物质的熔融部分。

公开(公告)号：US20080019002A1

公开(公告)日：2008-01-24

申请号：US11861885

申请日：2007-09-26

申请人： Yukio TANIGUCHI ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio TANIGUCHI ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： G02B27/00

CPC分类号： H01L29/78675 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0734 ,  G02B5/02 ,  G02B5/3083 ,  G03F1/28 ,  G03F1/34 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/66757 ,  Y10T117/10

摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

摘要翻译： 结晶装置包括：向非单晶半导体膜施加用于结晶的照明光的照明系统;以及移相器，其包括设置成形成直边界的第一和第二区域，并将来自照明系统的照明光透过 第一相位相位差，并且对照明光进行相位调制，以提供具有光强度落在包含对应于边界的轴的非单晶半导体膜的区域中的反峰值图案的光强度分布。 移相器还包括从边界延伸到第一和第二区域中的至少一个区域的小区域，并相对于第一和第二区域中的至少一个透射照明光第二相位延迟。

公开(公告)号：US20070096103A1

公开(公告)日：2007-05-03

申请号：US11612768

申请日：2006-12-19

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L29/04

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。

公开(公告)号：US20060284175A1

公开(公告)日：2006-12-21

申请号：US11509605

申请日：2006-08-25

申请人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L31/00

CPC分类号： H01L21/0268 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02686 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： A thin-film semiconductor substrate includes an insulative substrate, an amorphous semiconductor thin film that is formed on the insulative substrate, and a plurality of alignment marks that are located on the semiconductor thin film and are indicative of reference positions for crystallization.

公开(公告)号：US20060124971A1

公开(公告)日：2006-06-15

申请号：US11335470

申请日：2006-01-20

申请人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Masakiyo Matsumura

发明人： Masato Hiramatsu ,  Yoshinobu Kimura ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Yoshitaka Yamamoto ,  Masakiyo Matsumura

IPC分类号： H01L29/768

CPC分类号： H01L29/78696 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： A semiconductor device includes a non-single-crystal semiconductor film, a support substrate that supports the non-single-crystal semiconductor film, and an active device having a part of the non-single-crystal semiconductor film as a channel region. In particular, the channel region has an oxygen concentration not higher than 1×1018 atoms/cm3 and a carbon concentration not higher than 1×1018 atoms/cm3.

摘要翻译： 半导体器件包括非单晶半导体膜，支撑非单晶半导体膜的支撑衬底和具有部分非单晶半导体膜作为沟道区的有源器件。 特别地，沟道区的氧浓度不高于1×10 18原子/ cm 3，碳浓度不高于1×10 18原子 / cm 3。