公开(公告)号：US12110586B2

公开(公告)日：2024-10-08

申请号：US17426472

申请日：2020-01-30

Applicant: LAM RESEARCH CORPORATION

Inventor： Adrien Lavoie ,  Michael Philip Roberts ,  Chloe Baldasseroni ,  Richard Phillips ,  Ramesh Chandrasekharan

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45525 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/458

Abstract: A system to deposit a film on a substrate using atomic layer deposition includes a pedestal arranged in a processing chamber to support the substrate on a top surface of the pedestal when depositing the film on the substrate. A first annular recess in the pedestal extends downwardly from the top surface of the pedestal and radially inwardly from an outer edge of the pedestal towards an outer edge of the substrate. The first annular recess has an inner diameter that is greater than a diameter of the substrate. An annular ring is made of a dielectric material and is arranged around the substrate in the first annular recess. A second annular recess in the pedestal is located under the annular ring. The second annular recess has a height and extends radially inwardly from the outer edge of the pedestal towards the outer edge of the substrate.

公开(公告)号：US12084770B2

公开(公告)日：2024-09-10

申请号：US17400722

申请日：2021-08-12

Applicant: GlobalWafers Co., Ltd.

Inventor： Chun-Chin Tu ,  Manabu Hamano ,  Lunghsing Hsu

IPC: C23C16/48 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/488 ,  C23C16/458 ,  C23C16/52

Abstract: A system for depositing a layer on a substrate includes a processing chamber defining a gas inlet for introducing gas into the processing chamber and a gas outlet to allow the gas to exit the processing chamber. A substrate support is positioned within the processing chamber and is configured to receive a substrate. A transparent upper window includes a convex first face spaced from the substrate support to define an air gap therebetween. The upper window is positioned within the processing chamber to direct the gas from the gas inlet, through the air gap, and to the gas outlet. The first face includes a radially outer surface and a radially inner surface circumscribed within the outer surface. The outer surface has a first radius of curvature and the inner surface has a second radius of curvature that is different from the first radius of curvature.

公开(公告)号：US20240258153A1

公开(公告)日：2024-08-01

申请号：US18630688

申请日：2024-04-09

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: H01L21/683 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/687

CPC classification number: H01L21/6838 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/68735

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

公开(公告)号：US11984343B2

公开(公告)日：2024-05-14

申请号：US18095827

申请日：2023-01-11

Applicant: Applied Materials, Inc.

Inventor： Joseph Yudovsky ,  Kaushal Gangakhedkar

IPC: H01L21/683 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/687

CPC classification number: H01L21/6838 ,  C23C16/45544 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  H01L21/68735

Abstract: Described are apparatus and methods for processing a semiconductor wafer so that the wafer remains in place during processing. The wafer is subjected to a pressure differential between the top surface and bottom surface so that sufficient force prevents the wafer from moving during processing, the pressure differential generated by applying a decreased pressure to the back side of the wafer.

公开(公告)号：US11910726B2

公开(公告)日：2024-02-20

申请号：US18016338

申请日：2022-02-25

Applicant: MetOx Technologies, Inc.

Inventor： Shahab Khandan ,  Nagaraja Shashidhar ,  Mikhail Novozhilov

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23C16/54 ,  H10N60/01 ,  C23C16/46

CPC classification number: H10N60/0464 ,  C23C16/458 ,  C23C16/4586 ,  C23C16/45565 ,  C23C16/46 ,  C23C16/52 ,  C23C16/545

Abstract: A vapor deposition reactor apparatus, systems and methods for deposition of thin films, particularly high-temperature superconducting (HTS) coated conductors, utilize multi-sided susceptors and susceptor pairs for increased production throughput. The reactors may also be configured in multi-stack arrangements of the susceptors within a single reactor chamber for additional throughput gains.

公开(公告)号：US20240044001A1

公开(公告)日：2024-02-08

申请号：US18336207

申请日：2023-06-16

Applicant: Samsung Display Co., LTD.

Inventor： YOUNGSUN CHO ,  JUNHYEUK KO ,  MYUNGKYU KIM ,  YOUNG KWANG LEE ,  Seung Min JIN ,  Jae Min HONG

IPC: C23C16/458 ,  C23C16/04

CPC classification number: C23C16/458 ,  C23C16/042

Abstract: A deposition apparatus according to an embodiment includes a deposition source, and a deposition portion that faces the deposition source. The deposition portion is disposed at an angle of about 4 degrees to about 14 degrees with respect to an imaginary vertical line that is perpendicular to ground. The deposition portion includes a frame including an opening, and an outer portion disposed around the opening, a substrate disposed on a first side of the frame, and a plurality of back stages disposed on a second side opposite to the first side of the frame. The frame moves by movement of the plurality of back stages.

公开(公告)号：US11885019B2

公开(公告)日：2024-01-30

申请号：US17395240

申请日：2021-08-05

Applicant: ASM IP HOLDING B.V.

Inventor： Mark Hawkins ,  Matthew G. Goodman ,  Shawn Thomas

IPC: C23C16/455 ,  H01L21/687 ,  C23C16/458 ,  H01L21/67

CPC classification number: C23C16/45521 ,  C23C16/458 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4585 ,  H01L21/6875 ,  H01L21/68735 ,  H01L21/67115

Abstract: A susceptor including a generally circular body having a face with a radially inward section and a radially outward section proximate a circumference of the body, the radially outward section having at least one ring extending upward for contacting a bottom surface of a substrate, and wherein the radially inward section lacks a ring extending upward from the face.

公开(公告)号：US20240018653A1

公开(公告)日：2024-01-18

申请号：US18256358

申请日：2021-12-08

Applicant: KALPANA TECHNOLOGIES B.V.

Inventor： Diederick Adrianus Spee

IPC: C23C16/455 ,  C23C16/54 ,  C23C16/458

CPC classification number: C23C16/45551 ,  C23C16/545 ,  C23C16/458 ,  C23C16/45574

Abstract: A system for roll-to-roll deposition is described wherein the system comprises a substrate transport system comprising a static elongated central cylinder for helical transport of a flexible substrate arranged around the cylinder, the cylinder comprising bearing structures arranged in or arranged on the surface of the cylinder for frictionless or low-friction transport of the flexible substrate over the surface of the central cylinder; and, one or more atomic layer deposition ALD deposition heads, an ALD deposition head being configured as a hollow cylinder, the inner surface of a processing head including deposition structures for depositing atomic layers onto the flexible substrate; wherein the inner radius of a deposition head is larger than the outer radius of the central cylinder, the one or more deposition heads being configured to rotate around the central cylinder, wherein the longitudinal axis of a processing head coincides with the longitudinal axis of the central cylinder.

公开(公告)号：US11866823B2

公开(公告)日：2024-01-09

申请号：US17967035

申请日：2022-10-17

Applicant: ASM IP Holding B.V.

Inventor： SeungHwan Lee ,  HakYong Kwon ,  JongSu Kim ,  SungBae Kim ,  JuHyuk Park

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/67 ,  H01L21/673 ,  C23C16/458 ,  H01L21/687

CPC classification number: C23C16/45544 ,  C23C16/458 ,  C23C16/45536 ,  H01J37/3244 ,  H01J37/32082 ,  H01J37/32211 ,  H01L21/673 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/6875 ,  H01L21/68735

Abstract: A substrate processing device capable of preventing deformation of a substrate during a process includes a substrate supporting unit having a contact surface that comes into contact with an edge of a substrate to be processed, wherein the substrate supporting unit includes a protruding (e.g. embossed) structure protruding from a base to support deformation from the inside of the edge of the substrate to be processed.

公开(公告)号：US20230416923A1

公开(公告)日：2023-12-28

申请号：US18081325

申请日：2022-12-14

Applicant: WONIK IPS CO., LTD.

Inventor： Kee Jun KIM ,  Seung Ho LEE

IPC: C23C16/54 ,  C23C16/458 ,  C23C16/44 ,  C23C16/52

CPC classification number: C23C16/54 ,  C23C16/458 ,  C23C16/4412 ,  C23C16/52

Abstract: The present invention disclosed herein relates to a substrate processing apparatus and a substrate processing system having the same, and more particularly, to a substrate processing apparatus capable of simultaneously processing a large amount of substrates and a substrate processing system having the same. The present invention discloses a substrate processing apparatus including a first processing module in which substrate processing is performed on a plurality of substrates, a second processing module disposed adjacent to the first processing module to perform the substrate processing on the plurality of substrates, a first utility part disposed adjacent to a rear surface of the first processing module, a second utility part disposed adjacent to a rear surface of the second processing module, and an upper support part provided between the first utility part and the second utility part to divide the maintenance space into an upper area and a lower area.