公开(公告)号：US20240280890A1

公开(公告)日：2024-08-22

申请号：US18648522

申请日：2024-04-29

申请人： AGC Inc.

发明人： Takuma KATO ,  Daijiro AKAGI ,  Takeshi OKATO ,  Ryusuke OISHI ,  Yusuke ONO

IPC分类号： G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80

CPC分类号： G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80

摘要： A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

公开(公告)号：US12001133B2

公开(公告)日：2024-06-04

申请号：US18382356

申请日：2023-10-20

申请人： AGC Inc.

发明人： Takuma Kato ,  Daijiro Akagi ,  Takeshi Okato ,  Ryusuke Oishi ,  Yusuke Ono

IPC分类号： G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80

CPC分类号： G03F1/24 ,  G03F1/48 ,  G03F1/52 ,  G03F1/54 ,  G03F1/78 ,  G03F1/80

摘要： A reflective mask blank includes a substrate; a multilayer reflective film that reflects EUV light; a protection film that protects the multilayer reflective film; and an absorption film that absorbs the EUV light, in this order. The protection film contains 50 at % or more of Rh. When a band-shaped gray scale image parallel to an interface between the protection film and the multilayer reflective film is obtained by imaging a cross section of the protection film with a transmission electron microscope (TEM) and a luminance profile of the gray scale image in a longitudinal direction of the gray scale image is created, a number of peaks of the luminance profile per 100 nm in the longitudinal direction of the gray scale image is 50 or more.

公开(公告)号：US11860532B2

公开(公告)日：2024-01-02

申请号：US17815041

申请日：2022-07-26

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hsin-Chang Lee ,  Ping-Hsun Lin ,  Chih-Cheng Lin ,  Chia-Jen Chen

IPC分类号： G03F1/44 ,  G03F1/84 ,  G03F1/42 ,  G03F1/54 ,  G03F1/72 ,  G03F1/76 ,  G03F7/20 ,  G03F1/22 ,  H01L21/027 ,  G03F1/78

CPC分类号： G03F1/44 ,  G03F1/42 ,  G03F1/84 ,  G03F1/22 ,  G03F1/54 ,  G03F1/72 ,  G03F1/76 ,  G03F1/78 ,  G03F7/2004 ,  H01L21/0274

摘要： A method of making a semiconductor device includes defining a pattern including a plurality of sub-patterns on the photomask in the pattern region based on the identifying information. The defining of the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns, or rotating the first sub-pattern about an axis perpendicular to a top surface of the photomask relative to the second sub-pattern.

公开(公告)号：US20230289510A1

公开(公告)日：2023-09-14

申请号：US18318602

申请日：2023-05-16

申请人： D2S, Inc.

发明人： Akira Fujimura ,  P. Jeffrey Ungar ,  Nagesh Shirali

IPC分类号： G06F30/398 ,  G03F1/70 ,  G03F1/36 ,  G03F1/78 ,  G03F7/20 ,  G03F1/74

CPC分类号： G06F30/398 ,  G03F1/70 ,  G03F1/36 ,  G03F1/78 ,  G03F7/70441 ,  G03F7/705 ,  G03F1/74 ,  G06F2119/18

摘要： Methods for reticle enhancement technology (RET) for use with variable shaped beam (VSB) lithography include determining an initial mask pattern from a desired pattern for a substrate; calculating a first substrate pattern from the initial mask pattern; determining an initial set of VSB shots that will form the initial mask pattern; calculating a simulated mask pattern from the initial set of VSB shots; calculating a second substrate pattern from the simulated mask pattern; and adjusting the initial set of VSB shots, wherein the adjusting of the initial set of VSB shots creates an adjusted set of VSB shots.

公开(公告)号：US20230213852A1

公开(公告)日：2023-07-06

申请号：US18148051

申请日：2022-12-29

申请人： SEMES CO., LTD.

发明人： Ji Hoon Jeong ,  Young Dae Chung ,  Hyun Yoon

IPC分类号： G03F1/78 ,  G03F1/70

CPC分类号： G03F1/78 ,  G03F1/70

摘要： Disclosed is a method of treating a substrate, the method including: supplying a liquid to the substrate, emitting a laser to the substrate supplied with the liquid to heat the substrate, and emitting imaging light for capturing the substrate to obtain an image of the substrate including a region to which the laser is emitted, in which the laser and the imaging light are emitted to the substrate through a head lens, and a divergence angle of the laser emitted from the head lens and a divergence angle of the imaging light are matched with each other.

公开(公告)号：US20230152682A1

公开(公告)日：2023-05-18

申请号：US17821004

申请日：2022-08-19

申请人： Samsung Electronics Co., Ltd.

发明人： Soeun Shin

IPC分类号： G03F1/70 ,  G03F1/78

CPC分类号： G03F1/70 ,  G03F1/78

摘要： A method for obtaining exposure data may be provided. MTO (Mask Tape Out) design data for a mask pattern may be received. A mask data preparation operation with respect to the MTO design data may be performed to obtain exposure data. Two-dimensional contours of a plurality of types of test patterns in an exposure mask may be extracted through simulation using a mask process model. First critical dimensions may be measured at measurement points of the contour of each of the plurality of types of test patterns by using a metrology algorithm. The first critical dimensions may be averaged to obtain a first average critical dimension for each of the plurality of types of test patterns. Second critical dimensions in consideration of dispersion in each of the plurality of types of test patterns may be measured using an inverse function of a standard normal distribution, and the second critical dimensions may be averaged to obtain a second average critical dimension for each of the plurality of types of test patterns. A mean to target (MTT) value may be calculated as a difference between the second average critical dimension and a target critical dimension for each of the plurality of types of test patterns. Differences between ones of the MTT values may be calculated. When one or more of the differences between the ones of the MTT values may is outside of a tolerance threshold, the exposure data may be corrected.

公开(公告)号：US20180210353A1

公开(公告)日：2018-07-26

申请号：US15834351

申请日：2017-12-07

申请人： NUFLARE TECHNOLOGY, INC.

发明人： Rieko Nishimura ,  Hidekazu Takekoshi

IPC分类号： G03F9/00 ,  G03F7/20

CPC分类号： G03F9/7049 ,  G01B9/02 ,  G03F1/78 ,  G03F7/2059 ,  G03F7/70383 ,  G03F7/70725 ,  G03F7/70775 ,  H01J37/3175

摘要： According to one aspect of the present invention, a method of correcting a position of a stage mechanism, includes generating a two-dimensional map of a distortion amount at a position of a stage by applying a distortion amount of a position in a first direction of the stage at each of measured positions in a second direction as a distortion amount of a position in the first direction of the stage at each position in the second direction at each position in the first direction and by applying a distortion amount of a position in the second direction of the stage at each of measured positions in the first direction as a distortion amount of a position in the second direction of the stage at each position in the first direction at each position in the second direction; and correcting position data by using the two-dimensional map.

公开(公告)号：US09990460B2

公开(公告)日：2018-06-05

申请号：US15282131

申请日：2016-09-30

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hsu-Ting Huang ,  Shuo-Yen Chou ,  Ru-Gun Liu

IPC分类号： G06F17/50 ,  G03F1/78

CPC分类号： G06F17/5081 ,  G03F1/70 ,  G03F1/78 ,  G06F2217/08

摘要： Source beam optimization (SBO) methods are disclosed herein for enhancing lithography printability. An exemplary method includes receiving an integrated circuit (IC) design layout and performing an SBO process using the IC design layout to generate a mask shot map and an illumination source map. The SBO process uses an SBO model that collectively simulates a mask making process using the mask shot mask and a wafer making process using the illumination source map. A mask can be fabricated using the mask shot map, and a wafer can be fabricated using the illumination source map (and, in some implementations, using the mask fabricated using the mask shot map). The wafer includes a final wafer pattern that corresponds with a target wafer pattern defined by the IC design layout. The SBO methods disclosed herein can significantly reduce (or eliminate) variances between the final wafer pattern and the target wafer pattern.

公开(公告)号：US20180060474A1

公开(公告)日：2018-03-01

申请号：US15691951

申请日：2017-08-31

申请人： NuFlare Technology, Inc.

发明人： Shigehiro HARA ,  Kenichi YASUI

IPC分类号： G06F17/50

CPC分类号： G06F17/5045 ,  G03F1/78 ,  G06K9/4604 ,  G06K9/4647 ,  G06K9/52 ,  H01J37/3026 ,  H01J37/3177 ,  H01J2237/31762 ,  H01J2237/31764

摘要： In one embodiment, a generating method of drawing data includes generating a pixel map that includes dose amount information on each of pixels obtained by dividing a drawing area on an object into a mesh, extracting, from the pixel map, an island-shaped pixel map which is a group of multiple pixels in which the dose amount information is not zero, determining an order of definition of the dose amount information on the pixels in the island-shaped pixel map, and generating a compressed pixel map including a size of the pixels, information indicating the order of definition, coordinates of a pixel which is first in the order of definition in the island-shaped pixel map, and the dose amount information on the pixels in the island-shaped pixel map, the dose amount information being continuously defined based on the order of definition.

公开(公告)号：US20170357153A1

公开(公告)日：2017-12-14

申请号：US15620599

申请日：2017-06-12

申请人： IMS Nanofabrication AG

发明人： Elmar Platzgummer

IPC分类号： G03F1/36 ,  G06F17/50

CPC分类号： H01J37/3177 ,  G03F1/78

摘要： A method for compensating pattern placement errors during writing a pattern on a target in a charged-particle multi-beam exposure apparatus including a layout generated by exposing a plurality of beam field frames using a beam of electrically charged particles, wherein each beam field frame has a respective local pattern density, corresponding to exposure doses imparted to the target when exposing the respective beam field frames. During writing the beam field frames, the positions deviate from respective nominal positions because of build-up effects within said exposure apparatus, depending on the local pattern density evolution during writing the beam field frames. To compensate, a displacement behavior model is employed to predict displacements; a local pattern density evolution is determined, displacements of the beam field frames are predicted based on the local pattern density evolution and the displacement behavior model, and the beam field frames are repositioned accordingly based on the predicted values.