公开(公告)号：US20150027519A1

公开(公告)日：2015-01-29

申请号：US14387518

申请日：2013-03-13

申请人： Soitec

发明人： Bruno Ghyselen ,  Chantal Arena ,  Frank Dimroth ,  Andreas W. Bett

IPC分类号： H01L31/0725 ,  H01L31/18

CPC分类号： H01L31/0725 ,  C30B29/06 ,  C30B33/06 ,  H01L31/03046 ,  H01L31/0687 ,  H01L31/1844 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： The present disclosure relates to a method for manufacturing a multi-junction solar cell device comprising the steps of: providing a first substrate, providing a second substrate having a lower surface and an upper surface, forming at least one first solar cell layer on the first substrate to obtain a first wafer structure, forming at least one second solar cell layer on the upper surface of the second substrate to obtain a second wafer structure, and bonding the first wafer structure to the second wafer structure, wherein the at least one first solar cell layer is bonded to the lower surface of the second substrate and removing the first substrate.

摘要翻译： 本发明涉及一种用于制造多结太阳能电池器件的方法，包括以下步骤：提供第一衬底，提供具有下表面和上表面的第二衬底，在第一衬底上形成至少一个第一太阳能电池层 以获得第一晶片结构，在所述第二衬底的上表面上形成至少一个第二太阳能电池层以获得第二晶片结构，并将所述第一晶片结构接合到所述第二晶片结构，其中所述至少一个第一太阳能电池 将单元层结合到第二基板的下表面并除去第一基板。

公开(公告)号：US20150001568A1

公开(公告)日：2015-01-01

申请号：US14370903

申请日：2013-01-04

申请人： Commissariaat a I'energie atomique et aux ene alt ,  SOITEC

发明人： Yohan Desieres ,  Philippe Gilet ,  Pascal Guenard

IPC分类号： H01L33/22 ,  H01L33/00 ,  G02B5/02 ,  H01L33/10

CPC分类号： H01L33/22 ,  G02B5/0236 ,  G02B5/0284 ,  H01L33/005 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L2933/0025 ,  H01L2933/0058

摘要： A device for back-scattering an incident light ray, including: a host substrate; a structured layer; a first face in contact with a front face of the host substrate; a second flat face parallel to the first face; a first material and a second material which form, in a mixed plane, alternating surfaces at least one of whose dimensions is between 300 nm and 800 nm, the mixed plane is between the first and second face of the structured layer; wherein the refractive index of the first and of the second material are different, the structured layer is covered by a specific layer, the specific layer is made of a material which is different from the first and second materials of the structured layer, and the specific layer is crystalline and semi-conductive.

摘要翻译： 一种用于对入射光线进行背散射的装置，包括：主机基板; 结构化层; 与主体基板的前表面接触的第一面; 平行于第一面的第二平面; 第一材料和第二材料，其在混合平面中形成至少一个其尺寸在300nm和800nm之间的交替表面，所述混合平面位于所述结构化层的第一和第二面之间; 其中所述第一和第二材料的折射率不同，所述结构化层被特定层覆盖，所述特定层由与所述结构化层的第一和第二材料不同的材料制成，并且所述特定层 层是晶体和半导电的。

公开(公告)号：US08842945B2

公开(公告)日：2014-09-23

申请号：US13206299

申请日：2011-08-09

申请人： Bich-Yen Nguyen ,  Mariam Sadaka

发明人： Bich-Yen Nguyen ,  Mariam Sadaka

IPC分类号： G02B6/12 ,  H01L25/16 ,  H01L27/06 ,  H01L31/103

CPC分类号： H01L25/167 ,  G02B6/12002 ,  G02B6/12004 ,  H01L27/0688 ,  H01L27/1203 ,  H01L31/103 ,  H01L33/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： Three dimensionally integrated semiconductor systems include a photoactive device operationally coupled with a current/voltage converter on a semiconductor-on-insulator (SeOI) substrate. An optical interconnect is operatively coupled to the photoactive device. A semiconductor device is bonded over the SeOI substrate, and an electrical pathway extends between the current/voltage converter and the semiconductor device bonded over the SeOI substrate. Methods of forming such systems include forming a photoactive device on an SeOI substrate, and operatively coupling a waveguide with the photoactive device. A current/voltage converter may be formed over the SeOI substrate, and the photoactive device and the current/voltage converter may be operatively coupled with one another. A semiconductor device may be bonded over the SeOI substrate and operatively coupled with the current/voltage converter.

摘要翻译： 三维集成的半导体系统包括在绝缘体上半导体（SeOI）衬底上与电流/电压转换器可操作地耦合的光活性器件。 光学互连可操作地耦合到光活性器件。 半导体器件接合在SeOI衬底上，并且电路在电流/电压转换器和接合在SeOI衬底上的半导体器件之间延伸。 形成这种系统的方法包括在SeOI衬底上形成光活性器件，并且可操作地将波导与光活性器件耦合。 可以在SeOI衬底上形成电流/电压转换器，并且光敏器件和电流/电压转换器可以彼此可操作地耦合。 半导体器件可以接合在SeOI衬底上并且与电流/电压转换器可操作地耦合。

公开(公告)号：US08836081B2

公开(公告)日：2014-09-16

申请号：US13592049

申请日：2012-08-22

申请人： Chantal Arena

发明人： Chantal Arena

IPC分类号： H01L29/12 ,  H01L21/02 ,  H01L21/762

CPC分类号： H01L21/0254 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02647 ,  H01L21/76254 ,  H01L29/0684 ,  H01L29/2003

摘要： Methods of fabricating semiconductor devices or structures include forming structures of a semiconductor material overlying a layer of a compliant material, subsequently changing the viscosity of the compliant material to relax the semiconductor material structures, and utilizing the relaxed semiconductor material structures as a seed layer in forming a continuous layer of relaxed semiconductor material. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Novel intermediate structures are formed during such methods. Engineered substrates include a continuous layer of semiconductor material having a relaxed lattice structure.

摘要翻译： 制造半导体器件或结构的方法包括形成覆盖柔性材料层的半导体材料的结构，随后改变柔顺材料的粘度以使半导体材料结构松弛，并且利用松弛的半导体材料结构作为晶种层形成 连续的松弛半导体材料层。 在一些实施例中，半导体材料层可以包括III-V型半导体材料，例如氮化铟镓。 在这种方法中形成了新的中间结构。 工程衬底包括具有松弛晶格结构的连续的半导体材料层。

公开(公告)号：US08835747B2

公开(公告)日：2014-09-16

申请号：US13227664

申请日：2011-09-08

申请人： Wayne Miller ,  Jerry Dejong ,  Victor Ocegueda ,  Vayardo Lalo Ruiz ,  Anthony Wlodarczyk

发明人： Wayne Miller ,  Jerry Dejong ,  Victor Ocegueda ,  Vayardo Lalo Ruiz ,  Anthony Wlodarczyk

IPC分类号： H01L31/042 ,  F24J2/38 ,  B21D53/06 ,  H01L31/052 ,  F24J2/54

CPC分类号： H01L31/052 ,  F24S25/11 ,  F24S25/12 ,  F24S25/13 ,  F24S25/617 ,  F24S30/45 ,  F24S30/455 ,  F24S2030/11 ,  F24S2030/12 ,  F24S2030/131 ,  F24S2030/136 ,  F24S2030/15 ,  G01S3/7861 ,  H02S20/10 ,  H02S20/32 ,  Y02E10/47 ,  Y10T29/49355

摘要： Methods and apparatus are described for a two axis tracking mechanism for a concentrated photovoltaic system. Two or more paddle structures containing multiple CPV modules are installed onto each tilt axle on the common roll axle as part of the two-axis tracking mechanism's solar array. The two or more paddle structures couple across the common roll axle on that tilt axle. The common roll axle and each paddle assembly are manufactured in simple modular sections that assemble easily in the field while maintaining the alignment of the tracker assembly.

摘要翻译： 描述了用于集中光伏系统的双轴跟踪机构的方法和装置。 作为双轴跟踪机构的太阳能阵列的一部分，将两个或多个包含多个CPV模块的桨结构安装在公共辊轴上的每个倾斜轴上。 两个或多个桨结构跨越该倾斜轴上的公共辊轴。 普通辊轴和每个桨组件以简单的模块部分制造，其容易地在现场组装，同时保持跟踪器组件的对准。

公开(公告)号：US20140225182A1

公开(公告)日：2014-08-14

申请号：US14253690

申请日：2014-04-15

申请人： Soitec

发明人： Mohamad A. Shaheen ,  Frederic Allibert ,  Gweltaz Gaudin ,  Fabrice Lallement ,  Didier Landru ,  Karine Landry ,  Carlos Mazure

IPC分类号： H01L29/786

CPC分类号： H01L29/78603 ,  H01L29/32 ,  H01L29/7841 ,  H01L31/0248

摘要： A substrate comprises a base wafer, an insulating layer over the base wafer, and a top semiconductor layer over the insulating layer on a side thereof opposite the base wafer. The insulating layer comprises a charge-confining layer confined on one or both sides with diffusion barrier layers, wherein the charge-confining layer has a density of charges in absolute value higher than 1010 charges/cm2. Alternatively, the insulating layer comprises charge-trapping islands embedded therein, wherein the charge-trapping islands have a total density of charges in absolute value higher than 1010 charges/cm2.

摘要翻译： 衬底包括基底晶片，在基底晶片上方的绝缘层，以及在与基底晶片相对的一侧上的绝缘层上的顶部半导体层。 绝缘层包括限制在具有扩散阻挡层的一侧或两侧的电荷限制层，其中电荷限制层的绝对值的电荷密度高于1010电荷/ cm 2。 或者，绝缘层包括嵌入其中的电荷捕获岛，其中电荷捕获岛具有高于1010电荷/ cm 2的绝对值的电荷的总密度。

公开(公告)号：US20140183601A1

公开(公告)日：2014-07-03

申请号：US14127926

申请日：2012-06-20

申请人： Fabrice Lallement ,  Christophe Figuet ,  Daniel Delprat

发明人： Fabrice Lallement ,  Christophe Figuet ,  Daniel Delprat

IPC分类号： H01L21/762 ,  H01L29/267

CPC分类号： H01L21/76254 ,  H01L29/267

摘要： A method for transferring a layer of semiconductor by providing a donor substrate that includes a useful layer of a semiconductor material, a confinement structure that includes a confinement layer of a semiconductor material having a chemical composition that is different than that of the useful layer, and two protective layers of semiconductor material that is distinct from the confinement layer with the protective layers being arranged on both sides of the confinement layer; introducing ions into the donor substrate, bonding the donor substrate to a receiver substrate, subjecting the donor and receiver substrates to a heat treatment that provides an increase in temperature during which the confinement layer attracts the ions in order to concentrate them in the confinement layer, and detaching the donor substrate from the receiver substrate by breaking the confinement layer.

摘要翻译： 一种用于通过提供包括半导体材料的有用层的施主衬底转移半导体层的方法，包括具有不同于有用层的化学组成的半导体材料的限制层的约束结构，以及 与限制层不同的半导体材料的两个保护层，其中保护层布置在限制层的两侧; 将供体衬底引入施主衬底中，将施主衬底粘合到接收器衬底上，对供体和接收衬底进行热处理，该处理提供限制层吸引离子的温度升高，以便将它们集中在约束层中， 以及通过破坏所述限制层将所述施主衬底从所述接收器衬底分离。

公开(公告)号：US08759881B2

公开(公告)日：2014-06-24

申请号：US13513151

申请日：2010-12-01

申请人： Jean-Marc Bethoux ,  Fabrice Letertre ,  Chris Werkhoven ,  Ionut Radu ,  Oleg Kononchuck

发明人： Jean-Marc Bethoux ,  Fabrice Letertre ,  Chris Werkhoven ,  Ionut Radu ,  Oleg Kononchuck

IPC分类号： H01L31/06

CPC分类号： H01L21/187 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/007 ,  H01L33/0079 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heterostructure that includes, successively, a support substrate of a material having an electrical resistivity of less than 10−3 ohm·cm and a thermal conductivity of greater than 100 W·m−1·K−1, a bonding layer, a first seed layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, a second seed layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, and an active layer of a monocrystalline material of composition AlxInyGa(1-x-y)N, and being present in a thickness of between 3 and 100 micrometers. The materials of the support substrate, the bonding layer and the first seed layer are refractory at a temperature of greater than 750° C., the active layer and second seed layer have a difference in lattice parameter of less than 0.005 Å, the active layer is crack-free, and the heterostructure has a specific contact resistance between the bonding layer and the first seed layer that is less than or equal to 0.1 ohm·cm2.

摘要翻译： 一种异质结构，其依次包括具有小于10-3欧姆·厘米的电阻率和大于100W·m-1·K-1的导热率的材料的支撑基板，接合层，第一 组成为Al x In y Ga（1-xy）N的单晶材料的第二晶种层和组成为Al x In y Ga（1-xy）N的单晶材料的有源层的组成为Al x In y Ga（1-xy）N的单晶材料的籽晶层， N，并且以3至100微米的厚度存在。 支撑衬底，结合层和第一种子层的材料在大于750℃的温度下是难熔的，活性层和第二种子层的晶格参数差异小于0.005，活性层 无裂纹，并且异质结构在接合层和第一种子层之间具有小于或等于0.1欧姆·cm 2的比接触电阻。

公开(公告)号：US08759196B2

公开(公告)日：2014-06-24

申请号：US13700435

申请日：2011-06-08

申请人： Michel Bruel

发明人： Michel Bruel

IPC分类号： H01L21/30

CPC分类号： H01L21/762 ,  H01L21/76254

摘要： A method for preparing a substrate for detaching a layer by irradiation of the substrate with a light flux for heating a buried region of the substrate and bringing about decomposition of the material of that region to detach the detachment layer. The method includes fabricating an intermediate substrate including a first buried layer, and a second covering layer that covers all or part of the first layer, with the covering layer being substantially transparent to the light flux and with the buried layer formed by implantation of particles into the substrate, followed by absorbing the flux, and selectively and adiabatically irradiating a treated region of the buried layer until at least partial decomposition of the material constituting it ensues.

摘要翻译： 一种用于通过用于加热衬底的掩埋区域的光束照射衬底来制备用于分离层的衬底的方法，并且使该区域的材料分解以分离脱离层。 该方法包括制造包括第一埋层的中间衬底和覆盖第一层的全部或部分的第二覆盖层，其中覆盖层对于光通量基本上是透明的，并且通过将颗粒注入形成的掩埋层 然后吸收焊剂，并且选择性地和绝热地照射掩埋层的处理区域，直到构成材料的材料至少部分分解为止。

公开(公告)号：US08754505B2

公开(公告)日：2014-06-17

申请号：US13148353

申请日：2009-12-24

申请人： Cyrille Colnat

发明人： Cyrille Colnat

IPC分类号： H01L23/544 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/2007

摘要： A method of producing a heterostructure by bonding at least one first substrate having a first thermal expansion coefficient onto a second substrate having a second thermal expansion coefficient, with the first thermal expansion coefficient being different from the second thermal expansion coefficient. Prior to bonding, trenches are formed in one of the two substrates from the bonding surface of the substrate. The trenches are filled with a material having a third thermal expansion coefficient lying between the first and second thermal expansion coefficients.

摘要翻译： 一种通过将具有第一热膨胀系数的至少一个第一基板结合到具有第二热膨胀系数的第二基板上而产生异质结构的方法，其中第一热膨胀系数不同于第二热膨胀系数。 在接合之前，从衬底的接合表面形成两个衬底之一的沟槽。 沟槽填充有第三热膨胀系数位于第一和第二热膨胀系数之间的材料。