Abstract:
New polymeric dielectric materials are provided for high power capacitors, especially for mobile and weapons applications. These materials utilize aminoplast crosslinking in their polymeric structure. The aminoplast crosslinking ability of these materials allows them to be customized for a number of applications, but also allows the materials to have a higher crosslinking density, leading to higher dielectric constants, higher breakdown voltage, and higher thermal stability. These materials can be incorporated into current capacitor manufacturing schemes with little to no processing changes.
Abstract:
Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.
Abstract:
Multiple bonding layer schemes that temporarily join semiconductor substrates are provided. In the inventive bonding scheme, at least one of the layers is directly in contact with the semiconductor substrate and at least two layers within the scheme are in direct contact with one another. The present invention provides several processing options as the different layers within the multilayer structure perform specific functions. More importantly, it will improve performance of the thin-wafer handling solution by providing higher thermal stability, greater compatibility with harsh backside processing steps, protection of bumps on the front side of the wafer by encapsulation, lower stress in the debonding step, and fewer defects on the front side.
Abstract:
New carbon nanotube (CNT) compositions and methods of using those compositions are provided. Raw carbon nanotubes are mechanically dispersed via milling into multifunctional alcohols and mixtures of multifunctional alcohols and solvents to form pastes or dispersions that are viscous enough to be printed using standard means such as screen printing. These pastes or dispersions are stable in both dilute and concentrated solution. The invention allows films to be formed on substrates (e.g., plastics, glass, metals, ceramics).
Abstract:
The present invention provides novel methods of fabricating microelectronics structures, and the resulting structures formed thereby, using EUV lithographic processes. The method involves utilizing an assist layer immediately below the photoresist layer. The assist layer can either be directly applied to the substrate, or it can be applied to any intermediate layer(s) that may be applied to the substrate. The preferred assist layers are formed from spin-coatable, polymeric compositions. The inventive method allows reduced critical dimensions to be achieved with improved dose-to-size ratios, while improving adhesion and reducing or eliminating pattern collapse issues.
Abstract:
Planarization methods and microelectronic structures formed therefrom are disclosed. The methods and structures use planarization materials comprising fluorinated compounds or acetoacetylated compounds. The materials are self-leveling and achieve planarization over topography without the use of etching, contact planarization, chemical mechanical polishing, or other conventional planarization techniques.
Abstract:
Anti-reflective compositions and methods of using these compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In a preferred embodiment, the polymers include a light-attenuating moiety having a structure selected from the group consisting of: 1 where: each of X1 and Y is individually selected from the group consisting of electron withdrawing groups; R2 is selected from the group consisting of alkyls and aryls; and R3 is selected from the group consisting of hydrogen and alkyls. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature), are wet developable, and have superior optical properties.
Abstract translation:提供了抗反射组合物和使用这些组合物形成电路的方法。 组合物包含溶解或分散在溶剂体系中的聚合物。 在优选的实施方案中,聚合物包括具有选自下组的结构的光衰减部分:其中:X 1和Y各自独立地选自吸电子基团; R 2选自烷基和芳基; 和R 3选自氢和烷基。 所得到的组合物是旋转碗相容的(即,它们在微光刻工艺的烘烤阶段之前或在室温下储存期间不交联)是湿显影的并且具有优异的光学性能。
Abstract:
Anti-reflective compositions and methods of using those compositions with low dielectric constant materials are provided. In one embodiment, the compositions include polymers comprising recurring monomers having unreacted ring members. In another embodiment, the polymers further comprise recurring monomers comprising ring members reacted with a light attenuating compound so as to open the ring. The compositions can be applied to dielectric layers so as to minimize or prevent reflection during the dual damascene process while simultaneously blocking via or photoresist poisoning which commonly occurs when organic anti-reflective coatings are applied to low dielectric constant layers.
Abstract:
A dual-layer temporary bonding system for semiconductor manufacturing including first and second bonding layers is provided. The first bonding layer includes a bond line adhesion promoter that acts as a bond line adhesion promoter during the bonding process. The second bonding layer includes one or more functionalities that will react with the bond line adhesion promoter during the bonding process. The materials and methods of this system can provide increased, precisely controlled, bond line adhesion while at the same time also satisfying other desired performance criteria.
Abstract:
Materials that are processable as spin coated films with a refractive index of less than about 1.25 are presented. These compositions include metal organic frameworks in a solvent system, with the MOFs including a metal or metal cluster (e.g., zirconium oxide) having organic linkers (e.g., maleic acid, benzene dicarboxylic acid) and optional endcaps to alter pore size, compositional stability, steric, and other properties of the material. The formed films are processable at low temperatures, thus allowing them to be processed on plastics. The provided materials find use in, for example, silicon photonics, augmented reality applications, virtual reality (VR) applications, CMOS image sensors, and micro-OLED applications.