公开(公告)号：US20070023834A1

公开(公告)日：2007-02-01

申请号：US11461312

申请日：2006-07-31

Applicant: Mi-Sung LEE ,  Yu-Sin YANG ,  Chung-Sam JUN ,  Byung-Sug LEE

Inventor： Mi-Sung LEE ,  Yu-Sin YANG ,  Chung-Sam JUN ,  Byung-Sug LEE

IPC: H01L27/12

CPC classification number: G01R31/2648 ,  G01R29/12 ,  G01R31/2656

Abstract: In a method of measuring a surface voltage of an insulating layer, the number of times that surface voltages are measured in a depletion region increases so that precise data about the depletion region may be obtained. The number of times that the surface voltages are measured in an accumulation region and an inversion region decreases so that the data about the depletion region may be rapidly obtained.

Abstract translation: 在测量绝缘层的表面电压的方法中，在耗尽区中测量表面电压的次数增加，从而可以获得关于耗尽区的精确数据。 在积累区域和反转区域中测量表面电压的次数减少，从而可以快速获得关于耗尽区域的数据。

公开(公告)号：US07027638B2

公开(公告)日：2006-04-11

申请号：US09949111

申请日：2001-09-07

Applicant: Chung-sam Jun ,  Sang-mun Chon ,  Hyoung-jin Kim ,  Dong-chun Lee ,  Sang-bong Choi ,  Sung-gon Ryu

Inventor： Chung-sam Jun ,  Sang-mun Chon ,  Hyoung-jin Kim ,  Dong-chun Lee ,  Sang-bong Choi ,  Sung-gon Ryu

IPC: G06K9/00

CPC classification number: G06T5/008 ,  G06T7/90 ,  G06T2207/20021 ,  G06T2207/30148

Abstract: A method for correcting color variations on the surface of a wafer, a method for selectively detecting a defect from different patterns, and computer readable recording media for the same are provided. Color variations in images of different parts of a wafer can be corrected using the mean and standard deviation of grey level values for the pixels forming each of the different parts of the wafer. In addition, different threshold values are applied to metal interconnect patterns and spaces of the wafer so that a defect can be selectively detected from the different patterns. Thus, a bridge known as a fatal, or killing defect to a semiconductor device can be detected without also falsely detecting grains as fatal defects. Due to increased defect screening capacity of the methods, the defect detecting method can be further efficiently managed.

公开(公告)号：US20060011837A1

公开(公告)日：2006-01-19

申请号：US11180504

申请日：2005-07-12

Applicant: Yun-Jung Jee ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Tae-Kyoung Kim

Inventor： Yun-Jung Jee ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Tae-Kyoung Kim

IPC: G21K7/00

CPC classification number: G21K7/00

Abstract: In a method and apparatus for forming a three-dimensional image for an inspection pattern, a reference intensity function of an inspection X-ray is formed in accordance with a continuous scanning depth, and is differentiated with respect to the scanning depth. The differential reference intensity function is decomposed into a start function and a characteristic function. The differential reference intensity function is then repeatedly integrated while a temporary vertical profile function is substituted for the start function until the temporary intensity of a reference X-ray is within an allowable error range. The temporary vertical profile function satisfying the error range is selected as an optimal vertical profile function. A surface shape is combined to the optimal vertical profile function along a depth of the inspection pattern to thereby form the three-dimensional image for the inspection pattern.

Abstract translation: 在用于形成检查图案的三维图像的方法和装置中，根据连续的扫描深度形成检查X射线的参考强度函数，并且相对于扫描深度是不同的。 差分参考强度函数被分解为起始函数和特征函数。 差分参考强度函数然后被重复地积分，而临时垂直轮廓函数被替换为开始函数，直到参考X射线的临时强度在可允许的误差范围内。 选择满足误差范围的临时垂直剖面函数作为最佳垂直剖面函数。 沿着检查图案的深度将表面形状组合到最佳垂直轮廓函数，从而形成用于检查图案的三维图像。

公开(公告)号：US20050094137A1

公开(公告)日：2005-05-05

申请号：US10903852

申请日：2004-07-30

Applicant: Joung-Soo Kim ,  Yu-Sin Yang ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

Inventor： Joung-Soo Kim ,  Yu-Sin Yang ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

IPC: H01L21/66 ,  G01N21/00 ,  G01N21/55 ,  G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/55

Abstract: In a method for inspecting a defect in accordance with one aspect of the present invention, an object is divided into a plurality of regions. Reflectivity of each of the plurality of regions is obtained. Amplification ratio for each region is determined using the reflectivity. A light is irradiated onto the regions. A light reflected from a first region is amplified by a first amplification ratio that is determined for the first region. Moving the irradiated light from the first region to a second region is detected. A light reflected from the second region is amplified by a second amplification ratio that is determined for the second region. The amplified lights from the first region and the second region are analyzed to determine an existence of a defect on the object.

Abstract translation: 在根据本发明的一个方面的用于检查缺陷的方法中，对象被分成多个区域。 获得多个区域中的每一个的反射率。 使用反射率确定每个区域的放大率。 光照射到这些区域上。 从第一区域反射的光被第一区域确定的第一放大率放大。 检测到将照射的光从第一区域移动到第二区域。 从第二区域反射的光被第二区域确定的第二放大率放大。 分析来自第一区域和第二区域的放大的光以确定物体上存在缺陷。

公开(公告)号：US06870948B2

公开(公告)日：2005-03-22

申请号：US09977238

申请日：2001-10-16

Applicant: Chung-sam Jun ,  Sang-Mun Chon ,  Sang-Bong Choi ,  Kye-Weon Kim ,  Sang-Hoon Lee ,  Yu-Sin Yang ,  Sang-Min Kim ,  Sang-Kil Lee

Inventor： Chung-sam Jun ,  Sang-Mun Chon ,  Sang-Bong Choi ,  Kye-Weon Kim ,  Sang-Hoon Lee ,  Yu-Sin Yang ,  Sang-Min Kim ,  Sang-Kil Lee

IPC: G01B15/00 ,  G01B15/08 ,  G01N15/00 ,  G01N15/14 ,  G01N23/20 ,  G01N23/225 ,  G06T1/00 ,  G06T7/00 ,  H01L21/66 ,  G06K9/00 ,  H01L21/8242

CPC classification number: G06T7/0004 ,  G01N15/1475 ,  G01N2015/0092 ,  G06T2207/30148 ,  H01J2237/2815

Abstract: A method and apparatus for numerically analyzing a growth degree of grains grown on a surface of a semiconductor wafer, in which the growth degree of grains is automatically calculated and numerated through a computer by using an image file of the surface of the semiconductor wafer scanned by an SEM. A predetermined portion of a surface of the wafer is scanned using the SEM, and the scanned SEM image is simultaneously stored into a database. An automatic numerical program applies meshes to an analysis screen frame and selects an analysis area on a measured image. Thereafter, a smoothing process for reducing an influence of noise is performed on respective pixels designated by the meshes using an average value of image data of adjacent pixels. A standardization process is then performed, based on respective images in order to remove a brightness difference between the measured images. After comparing standardized image data values of the respective pixels with a predetermined threshold value, the number of pixels whose standardized image data value is greater than the threshold value is counted. The growth degree of grains on the surface of the wafer is calculated by numerating a ratio of the counted number with respect to a total number of the pixels contained within the analysis target image.

Abstract translation: 一种用于数值分析生长在半导体晶片的表面上的晶粒的生长度的方法和装置，其中通过使用由半导体晶片的表面扫描的半导体晶片的表面的图像文件自动计算和计算晶粒的生长度 SEM。 使用SEM扫描晶片的表面的预定部分，并将扫描的SEM图像同时存储到数据库中。 自动数值程序将网格应用于分析屏幕框架，并在测量图像上选择分析区域。 此后，使用相邻像素的图像数据的平均值对由网格指定的各个像素执行用于减少噪声的影响的平滑处理。 然后基于相应的图像执行标准化处理，以便去除所测量的图像之间的亮度差异。 在将各像素的标准化图像数据值与预定阈值进行比较之后，对标准化图像数据值大于阈值的像素数进行计数。 通过对计数的数量相对于分析对象图像中包含的像素的总数的比率进行计算来计算晶片表面上的晶粒的生长度。

公开(公告)号：US06850332B2

公开(公告)日：2005-02-01

申请号：US10012562

申请日：2001-12-12

Applicant: Chung-Sam Jun ,  Kye-Weon Kim ,  Yu-Sin Yang ,  Hyo-Hoo Kim

Inventor： Chung-Sam Jun ,  Kye-Weon Kim ,  Yu-Sin Yang ,  Hyo-Hoo Kim

IPC: G01B11/02 ,  G01B11/06 ,  G03F7/20 ,  H01L21/027 ,  H01L21/66 ,  G01B11/24

CPC classification number: G03F7/70616 ,  G01B11/0608

Abstract: A method and an apparatus for measuring a step difference in a semiconductor device without making contact with the semiconductor device. A first beam is radiated onto a wafer so as to form a first focus on a first portion of the wafer, and a second beam is radiated onto the wafer so as to form a second focus on a second portion of the wafer. The step difference between the first portion and the second portion of the wafer is measured by calculating a vertical displacement distance of the wafer and a beam focusing device used to attain the first focus and the second focus.

Abstract translation: 一种用于测量半导体器件中的阶梯差而不与半导体器件接触的方法和装置。 将第一光束照射到晶片上，以在晶片的第一部分上形成第一焦点，并将第二光束照射到晶片上，以在晶片的第二部分上形成第二焦点。 通过计算晶片的垂直位移距离和用于获得第一焦点和第二焦点的光束聚焦装置来测量晶片的第一部分和第二部分之间的阶差。

公开(公告)号：US06815236B2

公开(公告)日：2004-11-09

申请号：US10694882

申请日：2003-10-29

Applicant: Tae-Kyoung Kim ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwang-Soo Kim ,  Koung-Su Shin ,  Jeong-Hyun Choi ,  Dong-Chun Lee

Inventor： Tae-Kyoung Kim ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kwang-Soo Kim ,  Koung-Su Shin ,  Jeong-Hyun Choi ,  Dong-Chun Lee

IPC: H01L2166

CPC classification number: G01N21/3563 ,  G01N21/8422

Abstract: A method of measuring a concentration of a material includes irradiating an infrared light onto a substrate having a layer including a first material and dopants, wherein the infrared light is partially absorbed by and partially transmitted through the substrate including the layer. Intensities of the infrared light absorbed in the first material and the dopants are computed according to light wave numbers by utilizing a difference between intensities of the infrared light before and after transmitting the substrate and layer and by utilizing a difference between intensities of the infrared light absorbed in the substrate and layer and absorbed in only the substrate. Concentrations of the dopants are obtained by utilizing a ratio of light wave number regions corresponding to predetermined intensities of infrared light absorbed in the dopants relative to light wave number regions corresponding to the predetermined intensity of infrared light absorbed in the first material.