公开(公告)号：US20080057199A1

公开(公告)日：2008-03-06

申请号：US11892949

申请日：2007-08-28

Applicant: Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima ,  Kazuhide Hasebe

Inventor： Takehiko Fujita ,  Jun Ogawa ,  Shigeru Nakajima ,  Kazuhide Hasebe

IPC: C23C16/455

CPC classification number: C30B33/005 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/31662

Abstract: In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process field while gas is exhausted from the other side. One or both of the oxidizing gas and the deoxidizing gas are activated. The oxidizing gas and the deoxidizing gas are caused to react with each other, thereby generating oxygen radicals and hydroxyl group radicals within the process field. An oxidation process is performed on the surfaces of the target substrate by use of the oxygen radicals and the hydroxyl group radicals.

Abstract translation: 在半导体工艺的氧化方法中，目标衬底在处理容器的工艺场内沿垂直方向间隔放置。 从处理场的一侧向工艺场供给氧化气体和脱氧气体，同时从另一侧排出气体。 一种或两种氧化气体和脱氧气体被激活。 使氧化气体和脱氧气体相互反应，从而在工艺场内产生氧自由基和羟基自由基。 通过氧自由基和羟基自由基在目标基材的表面进行氧化处理。

公开(公告)号：US07144823B2

公开(公告)日：2006-12-05

申请号：US10494970

申请日：2002-09-27

Applicant: Takanori Saito ,  Toshiyuki Makiya ,  Hisaei Osanai ,  Tsuyoshi Takizawa ,  Tomohisa Shimazu ,  Kazuhide Hasebe ,  Hiroyuki Yamamoto ,  Yukimasa Saito ,  Kenichi Yamaga

Inventor： Takanori Saito ,  Toshiyuki Makiya ,  Hisaei Osanai ,  Tsuyoshi Takizawa ,  Tomohisa Shimazu ,  Kazuhide Hasebe ,  Hiroyuki Yamamoto ,  Yukimasa Saito ,  Kenichi Yamaga

IPC: H01L21/31

CPC classification number: H01L21/67109 ,  H01L21/67098

Abstract: The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.

Abstract translation: 本发明是一种热处理单元，包括：上端具有开口的加热炉体; 设置在所述加热炉体的内壁上的加热单元; 由包含在加热炉体内的单个管构成的反应容器; 形成在反应容器的上部的气体排出管连接部; 以及设置在气体排出管连接部周围的第一温度控制单元。

公开(公告)号：US20060258170A1

公开(公告)日：2006-11-16

申请号：US11487434

申请日：2006-07-17

Applicant: Takanori Saito ,  Toshiyuki Makiya ,  Hisaei Osanai ,  Tsuyoshi Takizawa ,  Tomohisa Shimazu ,  Kazuhide Hasebe ,  Hiroyuki Yamamoto ,  Yukimasa Saito ,  Kenichi Yamaga

Inventor： Takanori Saito ,  Toshiyuki Makiya ,  Hisaei Osanai ,  Tsuyoshi Takizawa ,  Tomohisa Shimazu ,  Kazuhide Hasebe ,  Hiroyuki Yamamoto ,  Yukimasa Saito ,  Kenichi Yamaga

IPC: H01L21/31

CPC classification number: H01L21/67109 ,  H01L21/67098

Abstract: The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.

公开(公告)号：US20060205231A1

公开(公告)日：2006-09-14

申请号：US11368481

申请日：2006-03-07

Applicant: Pao-Hwa Chou ,  Kazuhide Hasebe

Inventor： Pao-Hwa Chou ,  Kazuhide Hasebe

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02271 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/45578 ,  C23C16/515 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/3144 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/76829

Abstract: An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a carbon hydride gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field while stopping supply of the second process gas to the process field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field. The fourth step stops supply of the first to third process gases to the field.

Abstract translation: 通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体和含有碳的第三工艺气体的工艺领域中， 氢化物气体。 该方法交替地包括第一至第四步骤。 第一步骤是将第一和第三工艺气体供应到现场，同时停止向工艺场供应第二工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场提供第一和第三处理气体的同时，向现场供应第二处理气体。 第四步停止向现场供应第一至第三处理气体。

公开(公告)号：US20060141782A1

公开(公告)日：2006-06-29

申请号：US11296852

申请日：2005-12-08

Applicant: Kazuhide Hasebe ,  Mitsuhiro Okada

Inventor： Kazuhide Hasebe ,  Mitsuhiro Okada

IPC: H01L21/44

CPC classification number: C23C16/52 ,  C23C16/4408

Abstract: After silicon nitride films have been formed on wafers by a film forming process in a reaction vessel, the reaction vessel is processed by a purging process specified by a purging recipe and compatible with the film forming process to suppress production of gases and particles by removing surface parts of films deposited on the inside surface of the reaction vessel and causative of production of gases and particles. A wafer boat 25 holding a plurality of wafers W is loaded into a reaction vessel 2, and the wafers W are processed by a film forming process specified by a film forming recipe 1 specifying, for example, Si2Cl2 gas and NH3 gas as film forming gases. Subsequently, a purging recipe 1 specifying a purging process compatible to the film forming process is selected automatically, and the reaction vessel 2 is processed by the purging process specified by the purging recipe 1. A purging recipe is selected automatically from a plurality of purging recipes specifying purging processes respectively compatible with film forming processes. Unnecessary extension of purging time is suppressed and the reaction vessel 2 can be processed by an appropriate purging process compatible with the film forming process.

Abstract translation: 氮化硅膜通过成膜工艺在反应容器中形成在氮化硅膜上之后，通过清洗配方指定的清洗方法处理反应容器，与成膜工艺相容，通过除去表面来抑制气体和颗粒的产生 沉积在反应容器内表面上的部分薄膜，并导致气体和颗粒的产生。 将保持多个晶片W的晶片舟皿25装载到反应容器2中，并且通过由成膜配方1指定的成膜方法处理晶片W，该成膜方法规定例如Si 2 O 3， Cl 2气体和NH 3气体作为成膜气体。 随后，自动选择指定与成膜过程相容的清洗过程的清洗配方1，并通过清洗配方1规定的清洗处理来处理反应容器2。 从指定与成膜过程相容的清洗处理的多个清洗配方自动选择清洗配方。 清洗时间的不必要的延长被抑制，反应容器2可以通过与成膜过程相容的适当清洗过程进行处理。

公开(公告)号：US20060032443A1

公开(公告)日：2006-02-16

申请号：US11188736

申请日：2005-07-26

Applicant: Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

Inventor： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Pao-Hwa Chou ,  Chaeho Kim ,  Jun Ogawa

IPC: C23C16/00

CPC classification number: C23C16/45531 ,  C23C16/30 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45546 ,  C23C16/45578 ,  C23C16/507

Abstract: An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.

Abstract translation: 在目标衬底上通过CVD形成杂质掺杂的氮化硅或氧氮化物膜，在选择性地供给含有硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体的工艺领域中， 含有掺杂气体的第三工艺气体。 该方法交替地包括第一至第四步骤。 第一步向现场供应第一和第三工艺气体。 第二步停止向现场供应第一至第三工艺气体。 第三步骤在停止向场施加第一和第三处理气体的同时停止向现场供应第二处理气体，并且包括通过激励机构激励第二处理气体的激发周期。 第四步停止向现场供应第一至第三处理气体。

公开(公告)号：US20060032442A1

公开(公告)日：2006-02-16

申请号：US11180620

申请日：2005-07-14

Applicant: Kazuhide Hasebe

Inventor： Kazuhide Hasebe

IPC: C23C16/00

CPC classification number: C23C16/402 ,  C03C17/245 ,  C03C2217/213 ,  C03C2218/152 ,  C23C16/45546 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608

Abstract: A silicon oxide film is formed on a target substrate by CVD, in a process field configured to be selectively supplied with an Si-containing gas, an oxidizing gas, and a deoxidizing gas. This method alternately includes first to fourth steps. The first step is arranged to perform supply of the Si-containing gas to the process field while stopping supply of the oxidizing and deoxidizing gases to the process field. The second step is arranged to stop supply of the Si-containing, oxidizing, and deoxidizing gases to the process field. The third step is arranged to perform supply of the oxidizing and deoxidizing gases to the process field at the same time, while stopping supply of the Si-containing gas to the process field. The fourth step is arranged to stop supply of the Si-containing, oxidizing, and deoxidizing gases to the process field.

Abstract translation: 在配置为选择性地供给含有Si的气体，氧化气体和脱氧气体的工艺区域中，通过CVD在目标衬底上形成氧化硅膜。 该方法交替地包括第一至第四步骤。 第一步设置为在工艺过程中提供含Si气体，同时停止将氧化和脱氧气体供应给工艺现场。 第二步设置为停止向工艺场供应含Si，氧化和脱氧气体。 第三步是在停止向工艺场供给含Si气体的同时，同时向工艺场提供氧化和脱氧气体。 第四步设置为停止向工艺场供应含Si，氧化和脱氧气体。

公开(公告)号：US20050196533A1

公开(公告)日：2005-09-08

申请号：US10961025

申请日：2004-10-12

Applicant: Kazuhide Hasebe ,  Atsushi Endoh ,  Daisuke Suzuki ,  Keisuke Suzuki

Inventor： Kazuhide Hasebe ,  Atsushi Endoh ,  Daisuke Suzuki ,  Keisuke Suzuki

IPC: C23C16/40 ,  B05D3/02 ,  C23C16/00 ,  C23C16/52 ,  H01L21/205 ,  H01L21/316

CPC classification number: C23C16/56 ,  C23C16/045 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/3105

Abstract: A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while exposing the silicon oxide film to oxygen radicals and hydroxyl group radicals.

Abstract translation: 形成氧化硅膜的方法包括在目标衬底的表面上设置氧化硅膜，并对氧化硅膜进行重整工序。 通过使氧化硅膜退火，同时将氧化硅膜暴露于氧自由基和羟基自由基来进行重整过程。

公开(公告)号：US20050176261A1

公开(公告)日：2005-08-11

申请号：US10957827

申请日：2004-10-05

Applicant: Takahito Umehara ,  Masahiko Tomita ,  Hirotake Fujita ,  Kazuhide Hasebe

Inventor： Takahito Umehara ,  Masahiko Tomita ,  Hirotake Fujita ,  Kazuhide Hasebe

IPC: C23C16/455 ,  C23C16/18 ,  C23C16/40 ,  H01L21/02 ,  H01L21/205 ,  H01L21/28 ,  H01L21/283 ,  H01L21/285 ,  H01L21/31 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768

CPC classification number: H01L21/76876 ,  C23C16/18 ,  C23C16/40 ,  C23C16/45525 ,  C23C16/45546 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L28/65

Abstract: A film-formation method for a semiconductor process includes seed film formation and main film formation. In the seed film formation, a metal-containing raw material gas and a first assist gas to react therewith are supplied into a process container, which accommodates a target substrate having an underlying layer, thereby forming a seed film on the underlying layer by CVD. In the main film formation, the raw material gas and a second assist gas to react therewith are supplied into the process container, thereby forming a main film on the seed film by CVD. The seed film formation includes first and second periods performed alternately and continuously. In each first period, the raw material gas is supplied into the process container while the first assist gas is stopped. In each second period, the first assist gas is supplied into the process container while the raw material gas is stopped.

Abstract translation: 半导体工艺的成膜方法包括种子膜形成和主要成膜。 在种子膜形成中，将含金属的原料气体和与其反应的第一辅助气体供给到容纳具有下层的目标基板的处理容器中，由此通过CVD在下层上形成种子膜。 在主成膜中，将原料气体和与其反应的第二辅助气体供给到处理容器中，由此通过CVD在种子膜上形成主膜。 种子膜形成包括交替且连续地执行的第一和第二周期。 在第一期间，在第一辅助气体停止的同时将原料气体供给到处理容器。 在第二期间，在停止原料气体的同时，将第一辅助气体供给到处理容器。

公开(公告)号：US20050136693A1

公开(公告)日：2005-06-23

申请号：US10942103

申请日：2004-09-16

Applicant: Kazuhide Hasebe ,  Yutaka Takahashi ,  Kota Umezawa ,  Satoshi Takagi ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

Inventor： Kazuhide Hasebe ,  Yutaka Takahashi ,  Kota Umezawa ,  Satoshi Takagi ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

IPC: C23C16/34 ,  C23C16/455 ,  H01L21/205 ,  H01L21/314 ,  H01L21/318 ,  H01L21/324 ,  H01L21/336 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/3185

Abstract: The present invention is a thermal processing method of conducting a thermal process to an object to be processed, a base film having been formed on a surface of the object to be processed, the base film consisting of a SiO2 film or a SiON film. The method includes: an arranging step of arranging the object to be processed in a processing container; and a laminating step of supplying a source gas and an ammonia gas alternatively and repeatedly, so as to form a silicon nitride film on the base film repeatedly, the source gas being selected from a group consisting of dichlorosilane, hexachlorodisilane and tetrachlorosilane.

Abstract translation: 本发明是对待处理物体进行热处理的热处理方法，在被处理物的表面上形成的基膜，由SiO 2 2 电影或SiON电影。 该方法包括：将处理对象物置于处理容器内的布置步骤; 以及层叠步骤，交替重复地供给源气体和氨气，以在所述基膜上重复形成氮化硅膜，所述源气体选自二氯硅烷，六氯二硅烷和四氯硅烷。