公开(公告)号：US20170229326A1

公开(公告)日：2017-08-10

申请号：US15581497

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Zilu Weng ,  Dmitry Lubomirsky ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Son M. Phi ,  Shankar Venkataraman

IPC: H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67069 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

公开(公告)号：US20170229293A1

公开(公告)日：2017-08-10

申请号：US15581425

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

IPC: H01J37/32 ,  H01L21/3213 ,  C23C16/455 ,  H01L21/66 ,  C23C16/505 ,  C23C16/52 ,  H01L21/311 ,  H01L21/67

Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

公开(公告)号：US09725302B1

公开(公告)日：2017-08-08

申请号：US15247717

申请日：2016-08-25

Applicant: Applied Materials, Inc.

Inventor： Leonard Tedeschi ,  Lili Ji ,  Olivier Joubert ,  Dmitry Lubomirsky ,  Philip Allan Kraus ,  Daniel T. McCormick

IPC: H01L27/146 ,  B81B7/00 ,  B81C1/00 ,  H01L21/67

CPC classification number: B81B7/0058 ,  B81B2201/047 ,  B81C1/00031 ,  B81C1/00412 ,  C23C16/4401 ,  C23C16/52 ,  H01L21/67288

Abstract: Embodiments include devices and methods for detecting particles, monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, one or more micro sensors are mounted on wafer processing equipment, and are capable of measuring material deposition and removal rates in real-time. The micro sensors are selectively exposed such that a sensing layer of a micro sensor is protected by a mask layer during active operation of another micro sensor, and the protective mask layer may be removed to expose the sensing layer when the other micro sensor reaches an end-of-life. Other embodiments are also described and claimed.

公开(公告)号：US09666414B2

公开(公告)日：2017-05-30

申请号：US13651074

申请日：2012-10-12

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Srinivas Nemani ,  Ellie Yieh ,  Sergey G. Belostotskiy

IPC: C23C14/24 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/67 ,  H01L21/683 ,  H01L21/02

CPC classification number: H01L21/67069 ,  C23C16/0245 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32532 ,  H01J37/32587 ,  H01J37/32715 ,  H01J2237/3341 ,  H01L21/02126 ,  H01L21/3065 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/6831

Abstract: Methods and process chambers for etching of low-k and other dielectric films are described. For example, a method includes modifying portions of the low-k dielectric layer with a plasma process. The modified portions of the low-k dielectric layer are etched selectively over a mask layer and unmodified portions of the low-k dielectric layer. Etch chambers having multiple chamber regions for alternately generating distinct plasmas are described. In embodiments, a first charge coupled plasma source is provided to generate an ion flux to a workpiece in one operational mode, while a secondary plasma source is provided to provide reactive species flux without significant ion flux to the workpiece in another operational mode. A controller operates to cycle the operational modes repeatedly over time to remove a desired cumulative amount of the dielectric material.

公开(公告)号：US09646807B2

公开(公告)日：2017-05-09

申请号：US14456146

申请日：2014-08-11

Applicant: Applied Materials, Inc.

Inventor： Dmitry Lubomirsky ,  Qiwei Liang

IPC: C23C16/00 ,  B43M3/00 ,  F16L39/00 ,  F16L41/00 ,  F16L45/00 ,  F16L51/00 ,  H01J37/32

CPC classification number: H01J37/32816 ,  H01J37/32513 ,  Y10T428/24479

Abstract: In one embodiment, a surface having a sealing groove formed therein. The sealing groove is configured to accept an elastomeric seal. The sealing groove includes a first portion having a full dovetail profile and at least on a second portion having a half dovetail profile.

公开(公告)号：US20170125219A1

公开(公告)日：2017-05-04

申请号：US15180425

申请日：2016-06-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Toan Tran ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/32293 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/32229 ,  H01J37/32935 ,  H01J2237/334

Abstract: A rotating microwave is established for any resonant mode TEmnl or TMmnl of a cavity, where the user is free to choose the values of the mode indices m, n and 1. The fast rotation, the rotation frequency of which is equal to an operational microwave frequency, is accomplished by setting the temporal phase difference ΔØ and the azimuthal angle Δθ between two microwave input ports P and Q as functions of m, n and 1. The slow rotation of frequency Ωα (typically 1-1000 Hz), is established by transforming dual field inputs α cos Ωαt and ±α sin Ωαt in the orthogonal input system into an oblique system defined by the angle Δθ between two microwave ports P and Q.

公开(公告)号：US20170110290A1

公开(公告)日：2017-04-20

申请号：US15394583

申请日：2016-12-29

Applicant: Applied Materials, Inc.

Inventor： Satoru Kobayashi ,  Soonam Park ,  Dmitry Lubomirsky ,  Hideo Sugai

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32229 ,  H01J7/24 ,  H01J19/80 ,  H01J37/244 ,  H01J37/32201 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32935 ,  H01J37/3299 ,  H05B41/16

Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

公开(公告)号：US09607856B2

公开(公告)日：2017-03-28

申请号：US14720183

申请日：2015-05-22

Applicant: Applied Materials, Inc.

Inventor： Xikun Wang ,  Anchuan Wang ,  Nitin K. Ingle ,  Dmitry Lubomirsky

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/28 ,  H01L21/48 ,  H01J37/32

CPC classification number: H01L21/32136 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/4814

Abstract: Methods are described herein for selectively etching titanium nitride relative to dielectric films, which may include, for example, alternative metals and metal oxides lacking in titanium and/or silicon-containing films (e.g. silicon oxide, silicon carbon nitride and low-K dielectric films). The methods include a remote plasma etch formed from a chlorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride. The plasma effluents react with exposed surfaces and selectively remove titanium nitride while very slowly removing the other exposed materials. The substrate processing region may also contain a plasma to facilitate breaking through any titanium oxide layer present on the titanium nitride. The plasma in the substrate processing region may be gently biased relative to the substrate to enhance removal rate of the titanium oxide layer.

公开(公告)号：US20160284519A1

公开(公告)日：2016-09-29

申请号：US14974376

申请日：2015-12-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Satoru Kobayashi ,  Hideo Sugai ,  Soonam Park ,  Kartik Ramaswamy ,  Dmitry Lubomirsky

IPC: H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/3222 ,  H01J37/32302 ,  H01J37/32311

Abstract: A plasma reactor for processing a workpiece has a microwave source with a digitally synthesized rotation frequency using direct digital up-conversion and a user interface for controlling the rotation frequency.

Abstract translation: 用于处理工件的等离子体反应器具有使用直接数字上转换的数字合成旋转频率的微波源和用于控制旋转频率的用户界面。

公开(公告)号：US20160225652A1

公开(公告)日：2016-08-04

申请号：US14612857

申请日：2015-02-03

Applicant: Applied Materials, Inc.

Inventor： Toan Q. Tran ,  Zilu Weng ,  Dmitry Lubomirsky ,  Satoru Kobayashi ,  Tae Seung Cho ,  Soonam Park ,  Son M. Phi ,  Shankar Venkataraman

IPC: H01L21/683 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/67069 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68757 ,  H01L21/68785 ,  H01L21/68792

Abstract: A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

Abstract translation: 晶片卡盘组件包括圆盘，轴和基座。 圆盘包括限定冰球顶表面的电绝缘材料; 多个电极嵌入电绝缘材料内。 该圆盘还包括内部圆盘元件，其形成用于热交换流体的一个或多个通道，内部圆盘元件与电绝缘材料热连通，以及设置在靠近内部圆锥元件的导电板。 所述轴包括与所述板电耦合的导电轴壳体，以及包括用于所述电极的电连接器的多个连接器。 基座包括与轴壳体电耦合的导电基座壳体，以及设置在基座壳体内的电绝缘接线块，多个连接器穿过接线端子。