利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

227 条记录 (耗时 0.036 秒)

    Depletion MOS transistor and charging arrangement
    91.
    发明授权
    Depletion MOS transistor and charging arrangement 有权
    消耗MOS晶体管和充电布置

    公开(公告)号：US08247874B2

    公开(公告)日：2012-08-21

    申请号：US12868918

    申请日：2010-08-26

    申请人： Franz Hirler ,  Anton Mauder ,  Joachim Weyers ,  Frank Pfirsch

    发明人： Franz Hirler ,  Anton Mauder ,  Joachim Weyers ,  Frank Pfirsch

    IPC分类号： H01L27/088

    CPC分类号： H01L29/7813 ,  H01L21/823487 ,  H01L27/0629 ,  H01L27/0883 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/4238 ,  H01L29/7803 ,  H01L29/7828

    摘要： A depletion transistor includes a source region and a drain region of a first conductivity type, a channel region of the first conductivity type arranged between the source region and the drain region and a first gate electrode arranged adjacent the channel region and dielectrically insulated from the channel region by a gate dielectric. The depletion transistor further includes a first discharge region of a second conductivity type arranged adjacent the gate dielectric and electrically coupled to a terminal for a reference potential. The depletion transistor can be included in a charging circuit.

    摘要翻译： 耗尽型晶体管包括源区和漏区，第一导电类型，第一导电类型的沟道区域布置在源区和漏区之间，第一栅电极邻近沟道区设置并与沟道介电绝缘 区域。 耗尽晶体管还包括第二导电类型的第一放电区域，其布置成邻近栅极电介质并且电耦合到用于参考电位的端子。 耗尽晶体管可以包括在充电电路中。

    Transistor Component with Reduced Short-Circuit Current
    93.
    发明申请
    Transistor Component with Reduced Short-Circuit Current 审中-公开
    具有降低短路电流的晶体管组件

    公开(公告)号：US20120037955A1

    公开(公告)日：2012-02-16

    申请号：US13197903

    申请日：2011-08-04

    申请人： Franz Hirler ,  Anton Mauder ,  Thomas Raker ,  Hans-Joachim Schulze ,  Wolfgang Werner

    发明人： Franz Hirler ,  Anton Mauder ,  Thomas Raker ,  Hans-Joachim Schulze ,  Wolfgang Werner

    IPC分类号： H01L27/06

    CPC分类号： H01L21/26506 ,  H01L21/26513 ,  H01L29/04 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/165 ,  H01L29/167 ,  H01L29/32 ,  H01L29/7397 ,  H01L29/7804 ,  H01L29/7806 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A transistor component includes in a semiconductor body a source zone and a drift zone of a first conduction type, and a body zone of a second conduction type complementary to the first conduction type, the body zone arranged between the drift zone and the source zone. The transistor component further includes a source electrode in contact with the source zone and the body zone, a gate electrode adjacent the body zone and dielectrically insulated from the body zone by a gate dielectric layer, and a diode structure connected between the drift zone and the source electrode. The diode structure includes a first emitter zone adjoining the drift zone in the semiconductor body, and a second emitter zone of the first conduction type adjoining the first emitter zone. The second emitter zone is connected to the source electrode and has an emitter efficiency γ of less than 0.7.

    摘要翻译： 晶体管部件在半导体本体中包括源极区和第一导电类型的漂移区，以及与第一导电类型互补的第二导电类型的体区，布置在漂移区和源极区之间的体区。 所述晶体管部件还包括与所述源极区域和所述主体区域接触的源极电极，与所述主体区域相邻的栅极电极，并且通过栅极介电层与所述主体区域介电绝缘，以及连接在所述漂移区域 源电极。 二极管结构包括与半导体主体中的漂移区相邻的第一发射区和与第一发射区邻接的第一导电类型的第二发射极区。 第二发射极区域与源极连接，发射极效率γ小于0.7。

    Semiconductor device including a vertical gate zone, and method for producing the same
    94.
    发明授权
    Semiconductor device including a vertical gate zone, and method for producing the same 有权
    包括垂直栅极区的半导体器件及其制造方法

    公开(公告)号：US08044458B2

    公开(公告)日：2011-10-25

    申请号：US11752590

    申请日：2007-05-23

    申请人： Anton Mauder ,  Hans-Joachim Schulze

    发明人： Anton Mauder ,  Hans-Joachim Schulze

    IPC分类号： H01L29/94

    CPC分类号： H01L29/7397 ,  H01L29/0834 ,  H01L29/0847 ,  H01L29/0878

    摘要： A semiconductor device includes a semiconductor body defining a trench structure having walls. A plurality of vertical gate zones each have a gate electrode and a gate oxide that covers the walls of the trench structure. A body zone of a first conduction type is arranged between two of the gate zones and a drift zone of a complementary conduction type with respect to the first conduction type vertically adjoins the body zone. Floating shielding zones of the first conduction type are arranged adjacent to the gate zones and extend into the semiconductor body deeper than the trench structure of the gate zones. A pn junction with the drift zone is below the trench structure. A buried dopant zone of the same charge type as the drift zone has a higher impurity concentration than the drift zone and is arranged in a space charge region of the pn junction at a distance from the trench bottom of the trench structure.

    摘要翻译： 半导体器件包括限定具有壁的沟槽结构的半导体本体。 多个垂直栅极区域各自具有覆盖沟槽结构的壁的栅电极和栅极氧化物。 第一导电类型的主体区域布置在两个栅极区域之间，并且相对于第一导电类型的互补导电类型的漂移区域垂直邻接身体区域。 第一导电类型的浮动屏蔽区域布置成与栅极区相邻并且延伸到比栅极区的沟槽结构更深的半导体本体中。 具有漂移区的pn结在沟槽结构之下。 与漂移区相同的电荷类型的掩埋掺杂区具有比漂移区更高的杂质浓度，并且被布置在与沟槽结构的沟槽底部一定距离的pn结的空间电荷区中。

    SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
    95.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE 有权
    用于制造半导体器件的半导体器件和方法

    公开(公告)号：US20110165763A1

    公开(公告)日：2011-07-07

    申请号：US13048544

    申请日：2011-03-15

    申请人： Anton Mauder ,  Giulliano Aloise

    发明人： Anton Mauder ,  Giulliano Aloise

    IPC分类号： H01L21/225 ,  H01L21/20

    CPC分类号： H01L29/861 ,  H01L29/0634

    摘要： A semiconductor device has a semiconductor body with a semiconductor device structure including at least a first electrode and a second electrode. Between the two electrodes, a drift region is arranged, the drift region including charge compensation zones and drift zones arranged substantially parallel to one another. At least one charge carrier storage region which is at least partially free of charge compensation zones is arranged in the semiconductor body.

    摘要翻译： 半导体器件具有半导体器件结构，半导体器件结构至少包括第一电极和第二电极。 在两个电极之间布置漂移区域，漂移区域包括电荷补偿区域和漂移区域彼此基本平行布置。 至少部分没有电荷补偿区域的至少一个电荷载体存储区域被布置在半导体本体中。

    METHOD FOR TREATING AN OXYGEN-CONTAINING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR COMPONENT
    96.
    发明申请
    METHOD FOR TREATING AN OXYGEN-CONTAINING SEMICONDUCTOR WAFER, AND SEMICONDUCTOR COMPONENT 审中-公开
    用于处理含氧半导体波长的方法和半导体元件

    公开(公告)号：US20110042791A1

    公开(公告)日：2011-02-24

    申请号：US12161472

    申请日：2007-01-19

    申请人： Hans-Joachim Schulze ,  Helmut Strack ,  Anton Mauder

    发明人： Hans-Joachim Schulze ,  Helmut Strack ,  Anton Mauder

    IPC分类号： H01L29/08 ,  H01L21/26 ,  H01L21/322

    CPC分类号： H01L21/26506 ,  H01L21/263 ,  H01L21/3221 ,  H01L21/3225 ,  H01L29/0873 ,  H01L29/0878 ,  H01L29/32 ,  H01L29/66704 ,  H01L29/66727 ,  H01L29/861

    摘要： A method for treating an oxygen-containing semiconductor wafer, and semiconductor component. One embodiment provides a first side, a second side opposite the first side. A first semiconductor region adjoins the first side. A second semiconductor region adjoins the second side. The second side of the wafer is irridated such that lattice vacancies arise in the second semiconductor region. A first thermal process is carried out the duration of which is chosen such that oxygen agglomerates form in the second semiconductor region and that lattice vacancies diffuse from the first semiconductor region into the second semiconductor region.

    摘要翻译： 一种处理含氧半导体晶片和半导体元件的方法。 一个实施例提供了第一侧，与第一侧相对的第二侧。 第一半导体区域邻接第一侧。 第二半导体区域邻接第二侧。 搅拌晶片的第二面使得在第二半导体区域中出现晶格空位。 进行第一热处理，其持续时间被选择为使得在第二半导体区域中形成氧团聚体，并且晶格空位从第一半导体区扩散到第二半导体区域。

    Method for producing an integrated circuit including a semiconductor
    98.
    发明授权
    Method for producing an integrated circuit including a semiconductor 有权
    包括半导体的集成电路的制造方法

    公开(公告)号：US07781294B2

    公开(公告)日：2010-08-24

    申请号：US11831362

    申请日：2007-07-31

    申请人： Anton Mauder ,  Hans-Joachim Schulze

    发明人： Anton Mauder ,  Hans-Joachim Schulze

    IPC分类号： H01L21/336

    CPC分类号： H01L21/26506 ,  H01L21/263 ,  H01L29/32

    摘要： A method for producing an integrated circuit including a semiconductor is disclosed. In one embodiment, crystal defects are produced by irradiation in the material of the underlying semiconductor substrate which crystal defects form an inhomogeneous crystal defect density distribution in the vertical direction of the semiconductor component and lead to a corresponding inhomogeneous distribution of the carrier lifetime.

    摘要翻译： 公开了一种用于制造包括半导体的集成电路的方法。 在一个实施例中，通过在下面的半导体衬底的材料中照射产生晶体缺陷，该晶体缺陷在半导体组件的垂直方向上形成不均匀的晶体缺陷密度分布，并导致载流子寿命的相应不均匀分布。

    High-voltage diode with optimized turn-off method and corresponding optimization method
    100.
    发明授权
    High-voltage diode with optimized turn-off method and corresponding optimization method 有权
    具有优化关断方式的高压二极管及相应的优化方法

    公开(公告)号：US07705369B2

    公开(公告)日：2010-04-27

    申请号：US10999111

    申请日：2003-03-27

    申请人： Veli Kartal ,  Hans-Joachim Schulze ,  Anton Mauder ,  Elmar Falck

    发明人： Veli Kartal ,  Hans-Joachim Schulze ,  Anton Mauder ,  Elmar Falck

    IPC分类号： H01L29/861

    CPC分类号： H01L21/263 ,  H01L29/32 ,  H01L29/36 ,  H01L29/8611

    摘要： The invention relates to a high-voltage diode having a specifically optimized switch-off behavior. A soft recovery behavior of the component can be obtained without increasing the forward losses by adjusting in a specific manner the service life of the charge carriers by irradiating only the n+-conducting cathode emitter (6) side or both sides, i.e. the n+-conducting cathode emitter (6) side and the p+-conducting anode emitter (4) side.

    摘要翻译： 本发明涉及具有特别优化的关断行为的高压二极管。 通过仅仅照射n + - 导电阴极发射体（6）侧或两侧（即n +导体），以特定方式调节电荷载体的使用寿命，可以获得组分的软恢复行为，而不增加前向损耗 阴极发射极（6）侧和p +导体阳极发射极（4）侧。