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254 条记录 (耗时 0.027 秒)

    Isotropic dry cleaning process for noble metal integrated circuit structures
    92.
    发明授权
    Isotropic dry cleaning process for noble metal integrated circuit structures 失效
    贵金属集成电路结构各向同性干洗工艺

    公开(公告)号：US06254792B1

    公开(公告)日：2001-07-03

    申请号：US09093291

    申请日：1998-06-08

    申请人： Peter C. Van Buskirk ,  Frank DiMeo, Jr. ,  Peter C. Kirlin ,  Thomas H. Baum

    发明人： Peter C. Van Buskirk ,  Frank DiMeo, Jr. ,  Peter C. Kirlin ,  Thomas H. Baum

    IPC分类号： C23F112

    CPC分类号： H01L28/65 ,  C07F15/004 ,  C23C16/18 ,  C23C16/40 ,  C23F1/30 ,  C30B25/02 ,  C30B29/02 ,  C30B29/16 ,  H01L21/02071 ,  H01L21/32136 ,  H01L28/55 ,  Y10S438/906

    摘要： A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.

    摘要翻译： 通过使微电子器件结构与包括反应性卤化物组合物的清洁气体接触，从微电子器件结构去除包含选自铂，钯，铱和铑中的至少一种金属的贵金属残渣的方法， XeF 2，SF 6，SiF 4，Si 2 F 6或SiF 3和SiF 2基团。 该方法可以以分批清洁模式进行，其中清洁气体的新鲜电荷依次引入到含有残留物微电子器件结构的室中。 在与残留物反应之后，每个电荷从室中吹扫，并持续进行充电/净化，直到残余物至少部分地被去除到所需的程度。 或者，清洁气体可以连续流过包含微电子器件结构的室，直到贵金属残留物被充分除去。

    Method for etch fabrication of iridium-based electrode structures
    93.
    发明授权
    Method for etch fabrication of iridium-based electrode structures 失效
    铱基电极结构的蚀刻制造方法

    公开(公告)号：US6143191A

    公开(公告)日：2000-11-07

    申请号：US966796

    申请日：1997-11-10

    申请人： Thomas H. Baum ,  Frank Dimeo, Jr.

    发明人： Thomas H. Baum ,  Frank Dimeo, Jr.

    IPC分类号： C23F1/12 ,  C23F4/00 ,  H01L21/02 ,  H01L21/3213 ,  B44C1/22

    CPC分类号： H01L28/60 ,  C23F1/12 ,  C23F4/00 ,  H01L21/32136

    摘要： A method of forming an iridium-based electrode structure on a substrate, from an iridium-containing precursor thereof which is decomposed to deposit iridium on the substrate. The iridium-based material is formed on the substrate in a desired environment, e.g., an oxidizing ambient environment which may for example contain an oxidizing gas such as oxygen, ozone, air, or nitrogen oxide, or alternatively a reducing environment containing a reducing agent such as H.sub.2, CO or NH.sub.3. The iridium deposited on the substrate is contacted with an etching reagent such as halogen-based etch species (e.g., Cl.sub.2, Br.sub.2, F.sub.2, CCl.sub.4, Si.sub.2 F.sub.6, SiCl.sub.4, NF.sub.3, C.sub.2 F.sub.6, SF.sub.6, or CF.sub.4) formed by exposing halogen to light, laser radiation, plasma, or ion beam, or alternatively with XeF.sub.2, for sufficient time and under sufficient conditions to etch the deposited iridium-based material and form the etched iridium-based electrode structure. The electrode structure may then have a dielectric or ferroelectric material deposited thereon, for fabrication of thin film capacitor semiconductor devices such as DRAMs, FeRAMs, hybrid systems, smart cards and communication systems.

    摘要翻译： 由基于铱的前体形成基于铱的电极结构的方法，该方法被分解以在基板上沉积铱。 铱基材料在期望的环境中形成在基底上，例如氧化周围环境，其可以例如包含氧化气体，例如氧气，臭氧，空气或氮氧化物，或者可选地，含有还原剂的还原环境 如H2，CO或NH3。 沉积在基板上的铱与蚀刻剂接触，例如通过将卤素暴露于光而形成的卤素基蚀刻物质（例如，Cl2，Br2，F2，CCl4，Si2F6，SiCl4，NF3，C2F6，SF6或CF4） 激光辐射，等离子体或离子束，或者与XeF2交替，足够的时间和足够的条件下蚀刻沉积的基于铱的材料并形成蚀刻的基于铱的电极结构。 然后，电极结构可以具有沉积在其上的电介质或铁电材料，用于制造诸如DRAM，FeRAM，混合系统，智能卡和通信系统的薄膜电容器半导体器件。

    Method for photoselective seeding and metallization of three-dimensional materials
    94.
    发明授权
    Method for photoselective seeding and metallization of three-dimensional materials 失效
    三维材料的光选播种和金属化方法

    公开(公告)号：US6022596A

    公开(公告)日：2000-02-08

    申请号：US684280

    申请日：1996-07-17

    申请人： Thomas H. Baum ,  Luis J. Matienzo ,  Cindy Reidsema Simpson ,  Joseph E. Varsik

    发明人： Thomas H. Baum ,  Luis J. Matienzo ,  Cindy Reidsema Simpson ,  Joseph E. Varsik

    IPC分类号： C23C18/14 ,  C23C18/26 ,  H05K3/00 ,  H05K3/10 ,  H05K3/18 ,  H05K3/40 ,  B05D3/00 ,  B05D3/04 ,  B05D3/06 ,  B05D5/12

    CPC分类号： H05K3/105 ,  C23C18/14 ,  H05K3/185 ,  H05K3/403 ,  H01L2924/0002 ,  H05K2201/09645 ,  H05K3/0082 ,  Y10S428/901 ,  Y10T428/24917

    摘要： A method is provided for selectively metallizing one or more three-dimensional materials in an electronic circuit package comprising the steps of forming a layer of seeding solution on a surface of the three-dimensional material of interest, exposing this layer to light of appropriate wavelength, resulting in the formation of metal seed on regions of the three-dimensional material corresponding to the regions of the layer of seeding solution exposed to light; removing the unexposed regions of the layer of seeding solution by subjecting the exposed and unexposed regions of the layer of seeding solution to an alkaline solution. Thereafter, additional metal is deposited, e.g., plated, onto the metal seed using conventional techniques. Significantly, this method does not involve the use of a photoresist, or of a corresponding chemical developer or photoresist stripper. Of additional significance, this method is ideal for plating three-dimensional materials such as cone-shaped connectors used in electronic circuit packages.

    摘要翻译： 提供了一种用于在电子电路封装中选择性地金属化一种或多种三维材料的方法，包括以下步骤：在感兴趣的三维材料的表面上形成接种溶液层，将该层暴露于适当波长的光， 导致在与暴露于光的接种溶液层的区域相对应的三维材料的区域上形成金属种子; 通过使接种溶液层的暴露和未曝光区域经受碱溶液来除去接种溶液层的未曝光区域。 此后，使用常规技术将另外的金属沉积，例如电镀到金属种子上。 重要的是，该方法不涉及光致抗蚀剂或相应的化学显影剂或光致抗蚀剂剥离剂的使用。 具有其他意义的是，该方法对于电子电路封装中使用的锥形连接器等三维材料的电镀是理想的。

    Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films
    95.
    发明授权
    Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films 失效
    金属氧化物铁电薄膜的成核控制化学气相沉积方法

    公开(公告)号：US6010744A

    公开(公告)日：2000-01-04

    申请号：US996574

    申请日：1997-12-23

    申请人： Peter Van Buskirk ,  Jeff Roeder ,  Frank Hintermaier ,  Bryan Hendrix ,  Thomas H. Baum

    发明人： Peter Van Buskirk ,  Jeff Roeder ,  Frank Hintermaier ,  Bryan Hendrix ,  Thomas H. Baum

    IPC分类号： C23C16/04 ,  C23C16/40 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8246 ,  H01L27/105 ,  B05D5/00

    CPC分类号： H01L21/02271 ,  C23C16/04 ,  C23C16/40 ,  H01L21/02197 ,  H01L21/02299 ,  H01L21/31691 ,  Y10S977/891

    摘要： A method is described for the nucleation controlled deposition of ferroelectric thin films by chemical vapor deposition in a novel processing sequence wherein a higher density of bismuth nucleation sites is achieved either by the use of a substrate member which has been treated in a manner to yield a controllably and reproducible rough surface on which SBT films with excellent properties may be produced or by using a chemically modified substrate surface upon which surface chemical properties are modified. Typical techniques for achieving surface roughening include reactive ion etching, inert ion milling and chemical mechanical polishing, each of which may be used to delineate patterned bottom electrodes. The chemical properties of the substrate may be modified by alloy deposition, deposition of seed layers which are then partially or completely in-diffused ion implantation with or without heat treatment and changing the chemistry of the surface by a pre-exposure to chemical agents prior to deposition. The resultant oxide ferroelectric thin films are suitable for use in capacitors, memory devices and the like.

    摘要翻译： 描述了一种通过化学气相沉积的铁电薄膜的成核控制沉积的方法，其中新颖的加工顺序中，其中通过使用已经以产生a的方式处理的基底部件实现了较高密度的铋成核位点 粗糙表面的可控制和可重复性，可以在其上生产具有优异性能的SBT膜或通过使用改性表面化学性质的化学改性的基材表面。 用于实现表面粗糙化的典型技术包括反应离子蚀刻，惰性离子研磨和化学机械抛光，其中每一种可用于描绘图案化底部电极。 基材的化学性质可以通过合金沉积，种子层的沉积进行改性，然后种子层将被部分或全部扩散离子注入，有或者没有热处理，并且通过预先暴露于化学试剂之前改变表面的化学性质， 沉积 所得到的氧化物铁电薄膜适用于电容器，存储器件等。

    Laser-induced chemical vapor deposition of thin-film conductors
    96.
    发明授权
    Laser-induced chemical vapor deposition of thin-film conductors 失效
    激光诱导化学气相沉积的薄膜导体

    公开(公告)号：US5246745A

    公开(公告)日：1993-09-21

    申请号：US812686

    申请日：1991-12-23

    申请人： Thomas H. Baum ,  Paul B. Comita ,  John R. Lankard Sr. ,  Thoams F. Redmond ,  Thomas A. Wassick ,  Robert L. Jackson

    发明人： Thomas H. Baum ,  Paul B. Comita ,  John R. Lankard Sr. ,  Thoams F. Redmond ,  Thomas A. Wassick ,  Robert L. Jackson

    IPC分类号： C23C16/04 ,  H01L21/48 ,  H01L21/768 ,  H05K3/22

    CPC分类号： H05K3/225 ,  C23C16/047 ,  H01L21/485 ,  H01L21/76894 ,  H05K2203/107 ,  H05K2203/1338 ,  H05K2203/173

    摘要： Control of the local environment during pulsed laser removal of thin film circuit metallurgy is used to change the nature of the top surfaces. Interconnecting such laser treated surfaces with LCVD films results in different growth morphologies, dependent on the nature of the surface created and the debris generated during the ablation process. Flowing helium across the surface during the ablation process results in improved growth morphologies for the same laser writing conditions. A low power laser scan is used to induce metal deposition on the substrate without surface damage. This is followed by several scans at an intermediate laser power to deposit the desired thickness of metal (e.g., about 8 .mu.m). Lastly, a high power laser scan is used, either at the points of intersection between the existing metallurgy and the metal repair or across the entire deposit area. Thermal spreading or blooming is reduced by modulating the intensity of the laser source.

    摘要翻译： 在薄膜电路冶金的脉冲激光去除期间对局部环境的控制被用于改变顶表面的性质。 将这种激光处理的表面与LCVD膜相互连接导致不同的生长形态，这取决于所产生的表面的性质和消融过程中产生的碎屑。 在消融过程中，流过氦气的表面会导致相同激光写入条件下的生长形态的改善。 使用低功率激光扫描来诱导基板上的金属沉积而没有表面损伤。 随后在中间激光功率下进行多次扫描以沉积所需厚度的金属（例如，约8μm）。 最后，使用大功率激光扫描，无论是在现有冶金和金属修复之间或整个沉积区域的交点处。 通过调制激光源的强度来降低散热或开花。