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    Sensor module
    91.
    发明授权
    Sensor module 有权
    传感器模块

    公开(公告)号：US08748998B2

    公开(公告)日：2014-06-10

    申请号：US13206024

    申请日：2011-08-09

    Applicant: Jens Frey ,  Heribert Weber ,  Eckhard Graf

    Inventor： Jens Frey ,  Heribert Weber ,  Eckhard Graf

    IPC: H01L29/84

    CPC classification number: G01P15/125 ,  B81B7/02 ,  B81B2207/07 ,  B81B2207/095 ,  B81B2207/096 ,  B81B2207/097 ,  B81C2203/0118 ,  B81C2203/035 ,  G01L9/0048 ,  G01L9/0052 ,  G01L9/0073 ,  G01L19/0076 ,  G01L19/0092 ,  G01P15/0802 ,  G01R33/0286

    Abstract: A sensor module includes a substrate system which has multiple substrates situated one on top of the other and connected in each case via a wafer bond connection. The substrate system includes at least one first sensor substrate and at least one second sensor substrate, the first sensor substrate having a first sensor structure and the second sensor substrate having a second sensor structure. The first and second sensor structures are designed for detecting different characteristics. At least the first sensor structure includes a micromechanical functional structure. Moreover, a method for manufacturing such a sensor module is disclosed.

    Abstract translation: 传感器模块包括具有多个基板的基板系统，该基板一个在另一个之上并且通过晶片接合连接在每种情况下连接。 衬底系统包括至少一个第一传感器衬底和至少一个第二传感器衬底，第一传感器衬底具有第一传感器结构，第二传感器衬底具有第二传感器结构。 第一和第二传感器结构被设计用于检测不同的特性。 至少第一传感器结构包括微机械功能结构。 此外，公开了一种用于制造这种传感器模块的方法。

    METHOD FOR MANUFACTURING A MICROMECHANICAL STRUCTURE, AND MICROMECHANICAL STRUCTURE
    92.
    发明申请
    METHOD FOR MANUFACTURING A MICROMECHANICAL STRUCTURE, AND MICROMECHANICAL STRUCTURE 有权
    制造微观结构的方法和微观结构

    公开(公告)号：US20130043548A1

    公开(公告)日：2013-02-21

    申请号：US13586576

    申请日：2012-08-15

    Applicant: Jochen Reinmuth ,  Heribert Weber

    Inventor： Jochen Reinmuth ,  Heribert Weber

    IPC: H01L29/84 ,  H01L21/02

    CPC classification number: G01P15/0802 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2203/0136 ,  G01C19/5783

    Abstract: A method for manufacturing a micromechanical structure includes: forming a first insulation layer above a substrate; forming a first micromechanical functional layer on the first insulation layer; forming multiple first trenches in the first micromechanical functional layer, which trenches extend as far as the first insulation layer; forming a second insulation layer on the first micromechanical functional layer, which second insulation layer fills up the first trenches; forming etch accesses in the second insulation layer, which etch accesses locally expose the first micromechanical functional layer; and etching the first micromechanical functional layer through the etch accesses, the filled first trenches and the first insulation layer acting as an etch stop.

    Abstract translation: 一种制造微机械结构的方法包括：在基板上形成第一绝缘层; 在所述第一绝缘层上形成第一微机械功能层; 在所述第一微机械功能层中形成多个第一沟槽，所述沟槽延伸到所述第一绝缘层; 在所述第一微机械功能层上形成第二绝缘层，所述第二绝缘层填充所述第一沟槽; 在所述第二绝缘层中形成蚀刻访问，所述蚀刻访问局部暴露所述第一微机械功能层; 并且通过蚀刻访问蚀刻第一微机械功能层，填充的第一沟槽和用作蚀刻停止层的第一绝缘层。

    Device made of single-crystal silicon
    94.
    发明授权
    Device made of single-crystal silicon 有权
    单晶硅器件

    公开(公告)号：US07834452B2

    公开(公告)日：2010-11-16

    申请号：US12215655

    申请日：2008-06-27

    Applicant: Arnd Kaelberer ,  Helmut Baumann ,  Roland Scheuerer ,  Heribert Weber

    Inventor： Arnd Kaelberer ,  Helmut Baumann ,  Roland Scheuerer ,  Heribert Weber

    IPC: H01L21/00

    CPC classification number: B81C1/00539 ,  B81C1/00619 ,  B81C1/00626 ,  H01L21/30608

    Abstract: A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

    Abstract translation: 由单晶硅制成的器件，其具有第一侧，与第一侧相对的第二侧，以及从第一侧延伸到第二侧的第三侧，第一侧和第二侧各自延伸 单晶硅的100平面，第三面在单晶硅的111平面的第一区域中延伸。 第三面在单晶硅的110平面的第二区域中延伸。 此外，描述了用于制造由单晶硅制成的器件的制造方法。

    Micromechanical component and suitable method for its manufacture
    95.
    发明授权
    Micromechanical component and suitable method for its manufacture 失效
    微机械部件及其制造方法

    公开(公告)号：US07435691B2

    公开(公告)日：2008-10-14

    申请号：US11221520

    申请日：2005-09-07

    Applicant: Heribert Weber

    Inventor： Heribert Weber

    IPC: H01L21/31 ,  H01L21/469

    CPC classification number: B81C1/00158 ,  B81B2201/0278 ,  B81B2203/0315

    Abstract: A micromechanical component having a silicon substrate; a cavity provided in the substrate; and a diaphragm, provided on the surface of the substrate, which closes the cavity; the diaphragm featuring a silicon-oxide layer having an opening that is formed by silicon-oxide wedges pointing to each other; and the diaphragm having at least one closing layer which closes the opening. Also, a suitable manufacturing method.

    Abstract translation: 具有硅衬底的微机械部件; 设置在所述基板中的空腔; 以及设置在所述基板的表面上的隔膜，其关闭所述空腔; 所述隔膜的特征在于具有通过彼此指向的氧化硅楔形成的开口的氧化硅层; 并且所述隔膜具有封闭所述开口的至少一个封闭层。 另外，合适的制造方法。

    Microstructured Chemical Sensor
    98.
    发明申请
    Microstructured Chemical Sensor 有权
    微结构化学传感器

    公开(公告)号：US20070234801A1

    公开(公告)日：2007-10-11

    申请号：US10565984

    申请日：2004-07-23

    Applicant: Heribert Weber ,  Doris Schielein ,  Christian Krummel ,  Christoph Schelling

    Inventor： Heribert Weber ,  Doris Schielein ,  Christian Krummel ,  Christoph Schelling

    IPC: G01N27/12

    CPC classification number: G01N27/12 ,  G01N27/128

    Abstract: The invention relates to a sensor comprising a first metallization plane located on a substrate (1), a passivation layer (6) that is structured by contact holes (7) and is applied to said substrate and a sensitive ceramic layer (9) formed by thick-film technology on the passivation layer and in the contact holes (7). The aim of the invention is to improve the adhesion of the ceramic layer (9). To achieve this, the sensor is provided with an adhesion promoter layer (8) that is configured as a second metallization plane and is located between the passivation layer (6) and the ceramic layer (9).

    Abstract translation: 本发明涉及一种传感器，其包括位于基板（1）上的第一金属化平面，由接触孔（7）构成的钝化层（6），并被施加到所述基板和敏感陶瓷层（9） 在钝化层和接触孔（7）中的厚膜技术。 本发明的目的是提高陶瓷层（9）的粘合性。 为了实现这一点，传感器设置有被配置为第二金属化平面并且位于钝化层（6）和陶瓷层（9）之间的粘附促进层（8）。

    Gas sensor and method for the production thereof
    99.
    发明申请
    Gas sensor and method for the production thereof 审中-公开
    气体传感器及其制造方法

    公开(公告)号：US20070062812A1

    公开(公告)日：2007-03-22

    申请号：US10565991

    申请日：2004-07-23

    Applicant: Heribert Weber ,  Odd-Axel Pruetz ,  Christian Krummel ,  Christoph Schelling ,  Detlef Gruen

    Inventor： Heribert Weber ,  Odd-Axel Pruetz ,  Christian Krummel ,  Christoph Schelling ,  Detlef Gruen

    IPC: G01N27/26

    CPC classification number: G01N27/128

    Abstract: The invention relates to a gas sensor comprising a membrane layer (3) formed on a semiconductor substrate (2), an evaluation structure (7) being arranged on said substrate in an evaluation area (8) and a heating structure (9) outside the evaluation area (8), in addition to a gas-sensitive layer (10) arranged above the evaluation structure (7) and the heating structure (9), wherein said gas-sensitive layer (10) can be heated by the heating structure (9) and the electrical resistance of the gas-sensitive layer (10) can be evaluated by the evaluation structure (7). The heating structure (9) is arranged on an adhesion-promoting oxide layer (6) on the top surface of the membrane layer (3) and is separated from the gas-sensitive layer by a cover oxide layer (11). In order to enable reliable functionality of the gas sensor, that in the evaluation area (8), an adhesion-promoting layer (13) insensitive to oxide etching is arranged between the membrane layer (3) and the evaluation structure (7) or the evaluation structure (7) in the evaluation area (8) corresponding to the heating structure (9) is separated from the gas-sensitive layer (10) by the cover oxide layer (11), wherein the cover oxide layer (11) has contact holes (12) which uncover a central area of the surface of the evaluation structure (7) in order to produce a direct contact between the evaluation structure (7) and the gas-sensitive layer (10).

    Abstract translation: 本发明涉及一种气体传感器，包括形成在半导体衬底（2）上的膜层（3），评估结构（7）布置在评估区域（8）和加热结构（9）的所述衬底上 评价区域（8），除了设置在评价结构（7）和加热结构（9）之上的气敏层（10）之外，其中所述气敏层（10）可以被加热结构（ 9），气敏层（10）的电阻可以通过评价结构（7）进行评价。 加热结构（9）设置在膜层（3）的上表面上的粘附促进氧化物层（6）上，并通过覆盖氧化物层（11）与气敏层分离。 为了实现气体传感器的可靠功能，在评价区域（8）中，在膜层（3）和评价结构（7）之间设置对氧化物蚀刻不敏感的粘附促进层（13） 对应于加热结构（9）的评价区域（8）的评价结构（7）通过覆盖氧化物层（11）与气体敏感层（10）分离，其中，覆盖氧化物层（11）具有接触 孔（12），其露出评估结构（7）的表面的中心区域，以便产生评估结构（7）和气敏层（10）之间的直接接触。

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