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271 条记录 (耗时 0.026 秒)

    Ferroelectric integrated circuit
    93.
    发明授权
    Ferroelectric integrated circuit 失效
    铁电集成电路

    公开(公告)号：US5561307A

    公开(公告)日：1996-10-01

    申请号：US276474

    申请日：1994-07-18

    申请人： Takashi Mihara ,  Hiroyuki Yoshimori ,  Hitoshi Watanabe ,  Larry D. McMillan ,  Carlos P. De Araujo

    发明人： Takashi Mihara ,  Hiroyuki Yoshimori ,  Hitoshi Watanabe ,  Larry D. McMillan ,  Carlos P. De Araujo

    IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/76 ,  C23C14/00 ,  H01L29/94

    CPC分类号： H01L27/10852 ,  H01L27/10808 ,  H01L28/60 ,  H01L28/55

    摘要： An oversize ferroelectric capacitor is located against the contact hole to the MOSFET source/drain in a DRAM. A barrier layer made of titanium nitride, titanium tungsten, tantalum, titanium, tungsten, molybdenum, chromium, indium tin oxide, tin dioxide, ruthenium oxide, silicon, silicide, or polycide lies between the ferroelectric layer and the source drain. The barrier layer may act as the bottom electrode of the ferroelectric capacitor, or a separate bottom electrode made of platinum may be used. In another embodiment in which the barrier layer forms the bottom electrode, an oxide layer less than 5 nm thick is located between the barrier layer and the ferroelectric layer and the barrier layer is made of silicon, silicide, or polycide. A thin silicide layer forms and ohmic contact between the barrier layer and the source/drain. The capacitor and the barrier layer are patterned in a single mask step. The ends of the capacitor are stepped or tapered. In another embodiment both the bottom and top electrode may be made of silicon, silicide, polycide or a conductive oxide, such as indium tin oxide, tin dioxide, or ruthenium oxide.

    摘要翻译： 超大型铁电电容器位于DRAM中的MOSFET源极/漏极的接触孔处。 在铁电层和源极漏极之间，由氮化钛，钛钨，钽，钛，钨，钼，铬，氧化铟锡，二氧化锡，氧化钌，硅，硅化物或多晶硅化物形成的阻挡层。 阻挡层可以用作铁电电容器的底部电极，或者可以使用由铂制成的单独的底部电极。 在其中阻挡层形成底部电极的另一个实施例中，小于5nm厚的氧化物层位于势垒层和铁电层之间，阻挡层由硅，硅化物或多硅化物制成。 薄的硅化物层在阻挡层和源极/漏极之间形成欧姆接触。 在单个掩模步骤中对电容器和阻挡层进行图案化。 电容器的端部是阶梯式或锥形的。 在另一个实施例中，底部和顶部电极可以由硅，硅化物，多晶硅或导电氧化物，例如氧化铟锡，二氧化锡或氧化钌制成。

    Method and apparatus for reduced fatigue in ferroelectric memory elements
    94.
    发明授权
    Method and apparatus for reduced fatigue in ferroelectric memory elements 失效
    铁电存储元件疲劳减少的方法和装置

    公开(公告)号：US5487032A

    公开(公告)日：1996-01-23

    申请号：US338003

    申请日：1994-11-10

    申请人： Takashi Mihara ,  Hitoshi Watanabe ,  Hiroyuki Yoshimori ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

    发明人： Takashi Mihara ,  Hitoshi Watanabe ,  Hiroyuki Yoshimori ,  Carlos A. Paz de Araujo ,  Larry D. McMillan

    IPC分类号： G11C11/22

    CPC分类号： G11C11/22

    摘要： A method and apparatus for programming ferroelectric memory cells which reduces fatigue effects of switching polarization of the ferroelectric devices associated with the memory cells such as ferroelectric capacitors and transistors. Alteration of the rise AC fall times associated with signals used to switch ferroelectric device polarization are shown to reduce fatigue of the ferroelectric material thereby increasing the useful life of ferroelectric memory cells. Slowing the rise and fall times as well as the rate of signal level rise and fall, (signal shape), are shown to reduce the fatigue effects of switching polarization of ferroelectric devices. Methods and apparatus for producing a triangular ("sawtooth") signal waveform, a Gaussian signal waveform, and a waveform having exponential rise and fall times are disclosed.

    摘要翻译： 一种用于编程铁电存储器单元的方法和装置，其减少与诸如铁电电容器和晶体管之类的存储单元相关联的铁电体器件的开关极化的疲劳效应。 示出了与用于切换铁电体器件极化的信号相关联的上升AC下降时间的变化，以减少铁电材料的疲劳，从而增加铁电存储器单元的使用寿命。 降低上升和下降时间以及信号电平上升和下降（信号形状）的速率，可以减少铁电元件开关极化的疲劳效应。 公开了用于产生三角形（“锯齿”）信号波形，高斯信号波形和具有指数上升和下降时间的波形的方法和装置。

    Light interactive heterojunction semiconductor device
    95.
    发明授权
    Light interactive heterojunction semiconductor device 失效
    光交互式异质半导体器件

    公开(公告)号：US5126804A

    公开(公告)日：1992-06-30

    申请号：US710366

    申请日：1991-06-03

    申请人： Yutaka Nagai ,  Akira Takemoto ,  Hitoshi Watanabe

    发明人： Yutaka Nagai ,  Akira Takemoto ,  Hitoshi Watanabe

    IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/22 ,  H01L33/30 ,  H01S5/00 ,  H01S5/34

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/341

    摘要： A semiconductor optical element includes a semiconductor layer on a semiconductor substrate, a plurality of parallel stripe-shaped grooves in the layer having widths sufficiently narrow to produce a quantum effect and spaced at an interval sufficiently narrow to produce a quantum effect in a semiconductor layer disposed between adjacent grooves, and a structure including alternating semiconductor quantum well and barrier layers disposed on the semiconductor layer in which the quantum well layer thickness is less than the depth of the grooves and sufficiently thin to produce a quantum effect and the barrier layer thickness is larger than the depth of the grooves, the quantum well and barrier layers being alternatingly disposed on the semiconductor layer in the grooves and on regions between adjacent grooves.

    Solid state electronic device
    97.
    发明授权
    Solid state electronic device 失效
    固态电子设备

    公开(公告)号：US4942327A

    公开(公告)日：1990-07-17

    申请号：US357464

    申请日：1989-05-26

    申请人： Hitoshi Watanabe ,  Norio Hosaka ,  Akitsuna Yuhara ,  Jun Yamada

    发明人： Hitoshi Watanabe ,  Norio Hosaka ,  Akitsuna Yuhara ,  Jun Yamada

    IPC分类号： H03H3/08 ,  G10K11/36 ,  H03H9/02 ,  H03H9/145

    CPC分类号： H03H9/14538 ,  G10K11/36 ,  H03H9/02929 ,  H01L2224/45144 ,  H01L2224/48091

    摘要： A solid state electronic device having a thin film of an Al (aluminum) alloy Li (lithium) on the surface of a substrate for a surface acoustic wave (SAW). Interdigital electrodes, electric wiring patterns and bonding pads are formed by the thin film of the Li-added Al alloy. This thin film suppresses migration which occurs when a high density current is supplied to the device or a large amplitude SAW is generated. The thin film, which provides a small loss and relatively low hardness, provides a desired power handling capability and high yield of wire bonding. The this film assures high endurance to failure of the device and sufficient life of the device.

    摘要翻译： 一种在用于表面声波（SAW）的基板的表面上具有Al（铝）合金Li（锂）的薄膜的固体电子器件。 叉状电极，电线图案和接合焊盘由添加Li的Al合金的薄膜形成。 该薄膜抑制当向器件提供高密度电流或产生大幅度SAW时发生的迁移。 提供小的损耗和相对低的硬度的薄膜提供所需的功率处理能力和高的引线接合产量。 该电影确保了设备故障的高耐久性和设备的足够的使用寿命。

    Ball spline bearing
    98.
    发明授权
    Ball spline bearing 失效
    滚珠花键轴承

    公开(公告)号：US4634296A

    公开(公告)日：1987-01-06

    申请号：US773013

    申请日：1985-09-06

    申请人： Hitoshi Watanabe

    发明人： Hitoshi Watanabe

    IPC分类号： F16C29/00 ,  F16C29/06 ,  F16C31/06 ,  F16D3/06

    CPC分类号： F16C29/0695

    摘要： A cheap and small ball spline bearing comprises: identical balls; an outer hollow cylinder; a cylindrical holding apparatus fixed to the inner peripheral surface of this cylinder; and a spline axis. In the outer cylinder, three projections are formed in the inner peripheral surface at regular intervals in the axial direction, track grooves adapted to load the balls are formed in both side surfaces of each projection, and U-shaped grooves between the projections are formed to have the almost same depth. In the holding apparatus, infinite circulating passages for the balls using the both side surfaces as track grooves are formed symmetrically on the right and left sides with regard to the central line in the axial direction of each U-shaped groove, and windows each width of which is slightly narrower than the ball diameter are formed in the axial direction at the locations of the track grooves. The spline axis has six protuberances formed so as to sandwich the load balls existing at the locations of the projections of the cylinder, and track grooves are formed in the portions which are in contact with the balls. This bearing has a high rigidity and a small slide resistance and can be easily and accurately worked.

    摘要翻译： 一种便宜且小型的花键轴承包括：相同的球; 外中空圆筒; 固定在该圆筒的内周面的圆筒状保持装置; 和花键轴。 在外筒中，在轴向上规则间隔地在内周面形成有三个突起，在各突起的两侧面上形成有用于装载滚珠的轨道槽，在凸部之间形成有U字形槽 具有几乎相同的深度。 在保持装置中，使用两侧面作为轨道槽的球的无限循环通道相对于每个U形槽的轴向方向上的中心线在左右对称地形成，并且窗口各自的宽度 在轨道槽的位置处沿轴向形成比球直径稍窄的部分。 花键轴具有六个突起，其形成为夹着存在于圆柱体的突起的位置处的负载球，并且在与球接触的部分中形成轨道槽。 该轴承具有高刚性和小滑动阻力，并且可以容易且准确地加工。