Tapered Resistive Memory with Interface Dipoles

    公开(公告)号:US20210098698A1

    公开(公告)日:2021-04-01

    申请号:US16587543

    申请日:2019-09-30

    Abstract: Tapered resistive memory devices with interface dipoles are provided. In one aspect, a ReRAM device includes: a bottom electrode; a core dielectric that is thermally conductive disposed on the bottom electrode; an oxide resistive memory cell disposed along outer sidewalls of the core dielectric, wherein the oxide resistive memory cell has inner edges adjacent to the core dielectric, and outer edges that are tapered; an outer coating disposed adjacent to the outer edges of the oxide resistive memory cell; and a top electrode disposed on the core dielectric, the oxide resistive memory cell, and the outer coating. A method of forming a ReRAM device as well as a method of operating a ReRAM device are also provided.

    Nanowire enabled substrate bonding and electrical contact formation

    公开(公告)号:US10833048B2

    公开(公告)日:2020-11-10

    申请号:US15950239

    申请日:2018-04-11

    Abstract: A technique relates to a semiconductor device. First nanowires are formed on a first substrate, the first nanowires being electrically coupled to one or more first electrical sites on the first substrate. Second nanowires are formed on a second substrate, the second nanowires being electrically coupled to one or more second electrical sites on the second substrate. The first nanowires and the second nanowires are electrically coupled such that the one or more first electrical sites are electrically coupled to the one or more second electrical sites.

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