公开(公告)号：US06410089B1

公开(公告)日：2002-06-25

申请号：US09513723

申请日：2000-02-24

申请人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

发明人： Xin Sheng Guo ,  Keith Koai ,  Ling Chen ,  Mohan K. Bhan ,  Bo Zheng

IPC分类号： C23C1680

CPC分类号： C23C16/45565 ,  C23C16/455

摘要： A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of copper in a thermal process using a precursor such as HFAC-Cu-TMVS. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduced flow impedance is particularly useful for CVD of copper.

摘要翻译： 用于在化学气相沉积（CVD）中在晶片上分配气体的喷头，特别是使用诸如HFAC-Cu-TMVS的前体的热处理中的CVD CVD。 孔的图案被定制以补偿热和其他效果，特别是通过在三个或更多个区域中增加朝向晶片周边的孔的密度。 这种可变图案对于在载气中被雾化的液体前体特别有用，在这种情况下，可以消除喷头表面背面的第二多孔板，从而减少液体夹带气体的流动阻抗和所需的压力 ，其倾向于在较高压力下沉积。 减小的流阻抗对于铜的CVD是特别有用的。

公开(公告)号：US6110530A

公开(公告)日：2000-08-29

申请号：US339970

申请日：1999-06-25

申请人： Ling Chen ,  Seshadri Ganguli ,  Bo Zheng ,  Samuel Wilson ,  Christophe Marcadal

发明人： Ling Chen ,  Seshadri Ganguli ,  Bo Zheng ,  Samuel Wilson ,  Christophe Marcadal

IPC分类号： C23C16/18 ,  C23C16/448

CPC分类号： C23C16/18 ,  C23C16/4485

摘要： Copper films having improved properties are deposited by chemical vapor deposition from an organocopper precursor of a blend of copper hexafluoroacetylacetonate trimethylvinylsilane and from about 1.0 to 5.0 percent by weight of trimethylvinylsilane that is vaporized in a vaporizer, and passed into a chemical vapor deposition chamber. Separately up to about 2 percent by weight of the precursor blend of water vapor is added directly to the chamber.

摘要翻译： 具有改善性能的铜膜通过化学气相沉积从六氟乙酰丙酮铜三甲基乙烯基硅烷铜共混物的有机铜前体和约1.0-5.0重量％的在汽化器中汽化的三甲基乙烯基硅烷沉积，并通入化学气相沉积室。 将高达约2重量％的水蒸汽的前体共混物直接加入到室中。

公开(公告)号：US5691938A

公开(公告)日：1997-11-25

申请号：US237226

申请日：1994-05-03

申请人： Tom Dang-Hsing Yiu ,  Fuchia Shone ,  Tien-Ler Lin ,  Ling Chen

发明人： Tom Dang-Hsing Yiu ,  Fuchia Shone ,  Tien-Ler Lin ,  Ling Chen

IPC分类号： G11C16/04 ,  H01L21/8247 ,  H01L27/115 ,  G11C16/06

CPC分类号： H01L27/11519 ,  G11C16/0491 ,  H01L27/115 ,  H01L27/11521

摘要： An improved contactless EPROM array, EPROM cell design, and method for fabricating the same is based on a unique drain-source-drain configuration, in which a single source diffusion is shared by two columns of transistors. An elongated first drain diffusion region, an elongated source diffusion region, and an elongated second drain diffusion region, are formed in a semi-conductor substrate along essentially parallel lines. Field oxide regions are grown on opposite sides of the first and second drain diffusion regions. Floating gates and control gate wordlines are formed orthogonal to the drain-source-drain structure to establish two columns of storage cells having a shared source region. The shared source region is coupled through a bottom block select transistor to a virtual ground terminal. Each drain diffusion region is-coupled through a top block select transistor to global bitline. The cell structure uses two metal global bitlines which extend essentially parallel to the drain, source and drain diffusion regions, and a virtual ground conductor which couples a plurality of columns of transistors to a virtual ground terminal through a horizontal conductor, such as a buried diffusion line.

摘要翻译： 改进的非接触式EPROM阵列，EPROM单元设计及其制造方法基于唯一的漏极 - 源极 - 漏极配置，其中单个源极扩散由两列晶体管共享。 沿着基本上平行的线，在半导体衬底中形成细长的第一漏极扩散区域，细长源极扩散区域和细长的第二漏极扩散区域。 场氧化物区域在第一和第二漏极扩散区域的相对侧上生长。 浮置栅极和控制栅极字线与漏极 - 源极 - 漏极结构正交形成，以建立具有共享源极区域的两列存储单元。 共享源极区域通过底部块选择晶体管耦合到虚拟接地端子。 每个漏极扩散区域通过顶部块选择晶体管耦合到全局位线。 电池结构使用两个基本平行于漏极，源极和漏极扩散区域延伸的金属全局位线，以及通过水平导体（例如埋入扩散）将多个晶体管列耦合到虚拟接地端子的虚拟接地导体 线。

公开(公告)号：US5637903A

公开(公告)日：1997-06-10

申请号：US558490

申请日：1995-11-16

申请人： Siu-han Liao ,  Ling Chen

发明人： Siu-han Liao ,  Ling Chen

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/76 ,  H01L29/94

CPC分类号： H01L21/8238 ,  H01L27/0922 ,  Y10S438/91

摘要： A process for fabricating MOSFET structures, using one gate oxide thickness, but resulting in both low and high operating voltage devices, has been developed. A fabrication sequence is described illustrating the process that allows the formation of a depleted gate polysilicon structure, resulting in high operating voltages, and doped polysilicon gate structures, resulting in lower operating voltages.

摘要翻译： 已经开发了使用一个栅极氧化物厚度但产生低和高工作电压器件的MOSFET结构的制造工艺。 描述了制造顺序，其说明允许形成耗尽的栅极多晶硅结构，导致高工作电压和掺杂的多晶硅栅极结构的工艺，导致较低的工作电压。

公开(公告)号：USD842261S1

公开(公告)日：2019-03-05

申请号：US29624012

申请日：2017-10-30

申请人： Ling Chen

设计人： Ling Chen

公开(公告)号：US10096411B2

公开(公告)日：2018-10-09

申请号：US14359685

申请日：2012-05-17

申请人： Fengxia Hu ,  Ling Chen ,  Lifu Bao ,  Jing Wang ,  Baogen Shen ,  Jirong Sun ,  Huayang Gong

发明人： Fengxia Hu ,  Ling Chen ,  Lifu Bao ,  Jing Wang ,  Baogen Shen ,  Jirong Sun ,  Huayang Gong

IPC分类号： B22F1/00 ,  B22F3/02 ,  H01F1/01 ,  F25B21/00

摘要： Provided is a high-strength, bonded La(Fe, Si)13-based magnetocaloric material, as well as a preparation method and use thereof. The magnetocaloric material comprises magnetocaloric alloy particles and an adhesive agent, wherein the particle size of the magnetocaloric alloy particles is less than or equal to 800 μm and are bonded into a massive material by the adhesive agent; the magnetocaloric alloy particle has a NaZn13-type structure and is represented by a chemical formula of La1-xRx(Fe1-p-qCopMnq)13-ySiyAα, wherein R is one or more selected from elements cerium (Ce), praseodymium (Pr) and neodymium (Nd), A is one or more selected from elements C, H and B, x is in the range of 0≤x≤0.5, y is in the range of 0.8≤y≤2, p is in the range of 0≤p≤0.2, q is in the range of 0≤q≤0.2, α is in the range of 0≤α≤3.0. Using a bonding and thermosetting method, and by means of adjusting the forming pressure, thermosetting temperature, and thermosetting atmosphere, etc., a high-strength, bonded La(Fe, Si)13-based magnetocaloric material can be obtained, which overcomes the frangibility, the intrinsic property, of the magnetocaloric material. At the same time, the magnetic entropy change remains substantially the same, as compared with that before the bonding. The magnetic hysteresis loss declines as the forming pressure increases. And the effective refrigerating capacity, after the maximum loss being deducted, remains unchanged or increases.

公开(公告)号：US09497524B2

公开(公告)日：2016-11-15

申请号：US14353968

申请日：2011-10-25

申请人： Elmar Trojer ,  Ling Chen ,  Yue Sun

发明人： Elmar Trojer ,  Ling Chen ,  Yue Sun

IPC分类号： H04J14/00 ,  H04Q11/00 ,  H04J14/02

CPC分类号： H04Q11/0071 ,  H04J14/02 ,  H04Q11/00 ,  H04Q11/0067 ,  H04Q2213/1301 ,  H04Q2213/13098 ,  H04Q2213/13103 ,  H04Q2213/13292

摘要： The present invention relates to an interface and method for enabling interconnection of a host device and a small-formfactor pluggable module. The interface comprises a host device connector operative to receive a mating small-formfactor pluggable module connector and a switching device connected to the host device connector and operative to selectively switch at least one signal carried over the host device connector between at least two separate signal paths of the host device depending on a selected switching mode of the switching device.

摘要翻译： 本发明涉及一种用于实现主机设备和小型可插拔模块的互连的接口和方法。 接口包括主机设备连接器，其操作以接收配合的小型可插拔模块连接器和连接到主机设备连接器的开关设备，并且可操作以选择性地将主机设备连接器上承载的至少一个信号切换到至少两个分离的信号路径 根据切换装置的选择的切换模式。

公开(公告)号：US20120302731A1

公开(公告)日：2012-11-29

申请号：US13522306

申请日：2010-10-14

申请人： Lin Li ,  Bing Li ,  Yingjuan Tian ,  Ling Chen ,  Liang Zhu ,  Guoqin Liu ,  Jianyu Su ,  Xiaoxi Li

发明人： Lin Li ,  Bing Li ,  Yingjuan Tian ,  Ling Chen ,  Liang Zhu ,  Guoqin Liu ,  Jianyu Su ,  Xiaoxi Li

IPC分类号： C07K2/00 ,  C07K1/34 ,  C12P21/06

CPC分类号： C12P21/06 ,  A23J3/34 ,  A61K38/00 ,  C07K2319/00 ,  C12F3/06

摘要： The present invention provides methods for the preparation of protein hydrolysate, peptide solution and peptide from BSG. The wet BSG or BSG powder is dispersed in extract solution to prepare the crude BSG protein or the crude BSG protein solution. Preparing the crude BSG protein solution using the crude BSG protein and adjusting the pH to 6.5˜8.5, or adjusting the pH of the crude BSG protein solution to 6.5˜8.5. Then the solution is hydrolyzed with protease at 45° C. to 65° C. for 1 h to 5 h in a water bath shaker to prepare BSG protein hydrolysate. The protein hydrolysate is heated to inactivate the protease and centrifuged to obtain the peptide solution. The peptide solution is separated by gel filtration and each peak is collected and pooled together to obtain the peptide. The protein hydrolysate, peptide solution and peptide in the present invention are all prepared from BSG which is a natural product and available at low cost throughout the year. There is no harmful material used in the production process. The results of in vitro experiment suggest that BSG peptide prepared by this method shows a significantly hypoglycemic effect.

摘要翻译： 本发明提供了从BSG制备蛋白质水解物，肽溶液和肽的方法。 将湿BSG或BSG粉末分散在提取液中以制备粗BSG蛋白或粗BSG蛋白溶液。 使用粗BSG蛋白制备粗BSG蛋白溶液并调节pH至6.5〜8.5，或将粗BSG蛋白溶液的pH调节至6.5〜8.5。 然后将溶液在45℃至65℃下用蛋白酶在水浴摇床中水解1小时至5小时以制备BSG蛋白水解产物。 将蛋白质水解产物加热灭活蛋白酶并离心得到肽溶液。 通过凝胶过滤分离肽溶液，并收集每个峰并将其汇合在一起以获得肽。 本发明中的蛋白质水解物，肽溶液和肽均由天然产物BSG制备，全年以低成本获得。 在生产过程中没有使用有害物质。 体外实验结果表明，通过该方法制备的BSG肽显示出明显的降血糖作用。

公开(公告)号：US08070879B2

公开(公告)日：2011-12-06

申请号：US12544729

申请日：2009-08-20

申请人： Ling Chen ,  Vincent W. Ku ,  Mei Chang ,  Dien-Yeh Wu ,  Hua Chung

发明人： Ling Chen ,  Vincent W. Ku ,  Mei Chang ,  Dien-Yeh Wu ,  Hua Chung

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/34

CPC分类号： C23C16/45544 ,  C23C16/45502 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/45582 ,  C23C16/54

摘要： In one embodiment, an apparatus for performing an atomic layer deposition (ALD) process is provided which includes a chamber body containing a substrate support, a lid assembly attached to the chamber body, a remote plasma system (RPS) in fluid communication with the reaction zone, a centralized expanding conduit extending through the lid assembly and expanding radially outwards, a first gas delivery sub-assembly configured to deliver a first process gas, and a second gas delivery sub-assembly configured to deliver a second process gas into the centralized expanding conduit. The first gas delivery sub-assembly contains an annular channel encircling and in fluid communication with the centralized expanding conduit, wherein the annular channel is adapted to deliver the first process gas through a plurality of passageways and nozzles and into the centralized expanding conduit. The second gas delivery sub-assembly contains a gas inlet in fluid communication to the centralized expanding conduit.

摘要翻译： 在一个实施例中，提供了一种用于执行原子层沉积（ALD）工艺的装置，其包括容纳基板支撑件的室主体，附接到室主体的盖组件，与反应流体连通的远程等离子体系统（RPS） 区域，延伸穿过盖组件并径向向外扩张的集中扩展管道，构造成输送第一工艺气体的第一气体输送子组件和构造成将第二工艺气体输送到集中扩展中的第二气体输送子组件 导管。 第一气体输送子组件包含环形通道，环形通道与中央膨胀管道流体连通，其中环形通道适于将第一工艺气体通过多个通道和喷嘴输送到集中扩展管道中。 第二气体输送子组件包含与集中扩张导管流体连通的气体入口。

公开(公告)号：US08062422B2

公开(公告)日：2011-11-22

申请号：US12371138

申请日：2009-02-13

申请人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

发明人： Ling Chen ,  Vincent W. Ku ,  Hua Chung ,  Christophe Marcadal ,  Seshadri Ganguli ,  Jenny Lin ,  Dien-Yeh Wu ,  Alan Ouye ,  Mei Chang

IPC分类号： C30B25/02

CPC分类号： C23C16/45544 ,  C23C16/18 ,  C23C16/34 ,  C23C16/4402 ,  C23C16/4481 ,  C23C16/4482 ,  C23C16/4487 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.

摘要翻译： 本文描述的实施例涉及用于产生半导体处理系统的前体的装置。 在一个实施例中，描述了在气相沉积工艺期间产生前体气体的装置。 该装置包括容纳盖和底部之间的内部容积的容器，设置在盖上的气体入口和气体出口，与底部相连并从内部容积的下部区域延伸到上部区域的多个筒仓 ，以及包含在罐的下部区域内的氯浓度为约5ppm以下的钽前体。