摘要:
The inventive system includes a host, a network including a security gateway, and a public application. Established are an access session between the network and the host and an application session between the public application and the network. An application session record is created for the application session, and includes the user's public user identity used to access the public application, the user's private user identity used to access the network, a host identity, and an application session time. To determine the private user identity for the application session, the security gateway sends a query with the host identity and the application session time. These are compared with the host identity and access session time in an access session record. If they match, then the private user identity in the access session record is returned, and it is stored as the private user identity in the application session record.
摘要:
A method of integrating a fluorine-based dielectric with a metallization scheme is described. The method includes forming a fluorine-based dielectric layer on a substrate, forming a metal-containing layer on the substrate, and adding a buffer layer or modifying a composition of the fluorine-based dielectric layer proximate an interface between the fluorine-based dielectric layer and the metal-containing layer.
摘要:
A system and a method to remove a layer of high-k dielectric material during the manufacturing of an integrated circuit. In one embodiment of the invention, an etch reactant is employed to form volatile etch products when reacted with high-k layers. Alternately, high-k layers can be anisotropically etched of in accordance with a patterned photoresist or hard mask, where a hyperthermal beam of neutral atoms is used to aid in the reaction of an etch reactant with a high-k layer. Alternately, a hyperthermal beam of neutral atoms or a plasma treatment can used to modify a high-k layer, and subsequently etch the modified high-k layer utilizing an etch reactant that reacts with the modified high-k layer. In still another embodiment of the invention, the hyperthermal beam of neutral atoms is used to etch a high-k layer through physical bombardment of the high-k layer.
摘要:
An ion energy analyzer is described for use in diagnosing the ion energy distribution (IED) of ions incident on a radio frequency (RF) biased substrate immersed in plasma. The ion energy analyzer comprises an entrance grid exposed to the plasma, an ion selection grid disposed proximate to the entrance grid, an electron rejection grid disposed proximate to the ion selection grid, and an ion current collector disposed proximate to the electron rejection grid. The ion selection grid is coupled to an ion selection voltage source configured to positively bias the ion selection grid by an ion selection voltage, and the electron rejection grid is coupled to an electron rejection voltage source configured to negatively bias the electron rejection grid by an electron rejection voltage. Furthermore, an ion current meter is coupled to the ion current collector to measure the ion current.
摘要:
A surface wave plasma (SWP) source having an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. A power coupling system is coupled to the EM wave launcher, and configured to provide the EM energy to the EM wave launcher for forming the plasma. A mode scrambler coupled to the plasma surface of the EM wave launcher, and configured to reduce mode jumping between the desired EM wave mode and another EM wave mode.
摘要:
A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as line edge roughness effects, the mask layer is treated with an electron beam in the absence of an atomic halogen specie prior to proceeding with the etching process.
摘要:
Systems and methods of managing access records of user access to a secure data network include an access record gateway and an access record datastore; the access record gateway being in communication with an access server of the secure data network; and the access record datastore being in communication with the access record gateway. The access record gateway acquires user access information, such as time information; records the user access information in at least one access record; and stores the at least one access record in the access record datastore. The access record gateway also acquires user access activity information, such as user access termination information, and updates previously recorded user access information with the user access activity information. The at least one access record includes a plurality of sub-records, selected from a list including a user information sub-record, a network information sub-record, and a time information sub-record. The system may include a security application in communication with the access record gateway to query for an access record satisfying the security query parameter(s).
摘要:
A routing system utilizes a layer 2 switch interconnecting several routers to intelligently forward multicast packets throughout an internet exchange carrying multicast content. The layer 2 switch performs protocol snooping to extract a lookup key that is based on network layer protocol information. The lookup key is uniquely formulated to support either shared or explicit source distribution trees. The lookup key is used to query a forwarding memory that returns an outgoing port index. The outgoing port index points to one or more outgoing ports that are eligible to receive the multicast packet. The outgoing ports are also connected to the neighboring device(s) that are designated to receive the multicast packet. The routing system also supports real time maintenance and updating of the forwarding memory based on the periodic exchange of control messages. The routing system is configured to support PIM routers operating in PIM SM or PIM SSM modes. However, the routing system can also support other multicast protocols and/or standards.
摘要:
A method and system for adjusting and controlling the plasma uniformity in a plasma processing system is described. The plasma processing system includes an electron source electrode to which direct current (DC) power is coupled in order to generate a ballistic electron beam during the etching of the substrate. A ring electrode, provided about a periphery of the substrate and opposite the electron source electrode, is utilized to create a ring hollow cathode plasma to affect changes in the distribution of plasma density.
摘要:
A semiconductor device comprises a substrate, a patterned metal conductor layer over the substrate, and a passivation layer. The passivation layer may comprise a UV blocking, protection layer, over at least a portion of the substrate and patterned metal conductor layers, and a separation layer between the patterned metal conductor layer and the UV protection layer. The passivation layer may also comprise a gap-filling, hydrogen-blocking layer over the substrate, the patterned metal conductor layer and any UV protection layer.