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133 条记录 (耗时 0.041 秒)

    Relaxation of strained layers
    91.
    发明授权
    Relaxation of strained layers 有权
    应变层的松弛

    公开(公告)号：US08481408B2

    公开(公告)日：2013-07-09

    申请号：US13458587

    申请日：2012-04-27

    申请人： Fabrice Letertre ,  Carlos Mazure ,  Michael R. Krames ,  Melvin B. McLaurin ,  Nathan F. Gardner

    发明人： Fabrice Letertre ,  Carlos Mazure ,  Michael R. Krames ,  Melvin B. McLaurin ,  Nathan F. Gardner

    IPC分类号： H01L21/30

    CPC分类号： H01L21/2007 ,  H01L21/02422 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02658 ,  H01L21/3245 ,  H01L33/0095

    摘要： A method for relaxing a layer of a strained material. The method includes depositing a first low-viscosity layer on a first face of a strained material layer; bonding a first substrate to the first low-viscosity layer to form a first composite structure; subjecting the composite structure to heat treatment sufficient to cause reflow of the first low-viscosity layer so as to at least partly relax the strained material layer; and applying a mechanical pressure to a second face of the strained material layer wherein the second face is opposite to the first face and with the mechanical pressure applied perpendicularly to the strained material layer during at least part of the heat treatment to relax the strained material.

    摘要翻译： 一种放松应变材料层的方法。 该方法包括在应变材料层的第一面上沉积第一低粘度层; 将第一衬底粘合到第一低粘度层以形成第一复合结构; 对所述复合结构进行热处理以使所述第一低粘度层的回流至少部分地松弛所述应变材料层; 以及向所述应变材料层的第二面施加机械压力，其中所述第二面与所述第一面相对，并且在至少部分热处理期间垂直于所述应变材料层施加机械压力以松弛所述应变材料。

    Series connected flip chip LEDs with growth substrate removed
    92.
    发明授权
    Series connected flip chip LEDs with growth substrate removed 有权
    串联连接的倒装芯片LED与生长衬底被去除

    公开(公告)号：US08450754B2

    公开(公告)日：2013-05-28

    申请号：US13269669

    申请日：2011-10-10

    申请人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

    发明人： Michael R. Krames ,  John E. Epler ,  Daniel A. Steigerwald ,  Tal Margalith

    IPC分类号： H01L29/18

    CPC分类号： H01L33/0079 ,  H01L21/2654 ,  H01L27/153

    摘要： LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

    摘要翻译： LED层生长在蓝宝石衬底上。 单个倒装芯片LED通过挖沟或掩模离子注入形成。 包含多个LED的模块被切割并安装在底座晶片上。 在LED上形成的基座金属图案或金属图案将模块中的LED串联连接。 然后去除生长衬底，例如通过激光剥离。 在安装之前或之后形成半绝缘层，将LED机械连接在一起。 半绝缘层可以通过在衬底和LED层之间离子注入层来形成。 可以通过偏置半绝缘层来执行衬底去除后露出的半绝缘层的PEC蚀刻。 然后将底座切成块，以创建包含串联LED的LED模块。

    Grown Photonic Crystals in Semiconductor Light Emitting Devices
    95.
    发明申请
    Grown Photonic Crystals in Semiconductor Light Emitting Devices 有权
    半导体发光器件中的生长光子晶体

    公开(公告)号：US20120161187A1

    公开(公告)日：2012-06-28

    申请号：US13404369

    申请日：2012-02-24

    申请人： Jonathan J. Wierer, JR. ,  Michael R. Krames ,  Nathan F. Gardner

    发明人： Jonathan J. Wierer, JR. ,  Michael R. Krames ,  Nathan F. Gardner

    IPC分类号： H01L33/58

    CPC分类号： C30B29/60 ,  B82Y20/00 ,  G02B6/1225 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L2933/0083 ,  H01S5/105 ,  H01S5/34333

    摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.

    摘要翻译： 光子晶体在诸如III族氮化物结构的半导体结构内生长，其包括设置在n型区域和p型区域之间的发光区域。 光子晶体可以是由具有与半导体材料不同的折射率的材料分离的半导体材料的多个区域。 例如，光子晶体可以是在结构中生长并由气隙或掩模材料区域分离的半导体材料的柱。 生长光子晶体，而不是将光子晶体蚀刻成已经生长的半导体层，避免了蚀刻造成的损伤，这可能降低效率，并提供不间断的平面，在其上形成电触点。

    Light source including a wavelength-converted semiconductor light emitting device and a filter
    97.
    发明授权
    Light source including a wavelength-converted semiconductor light emitting device and a filter 有权
    光源包括波长转换的半导体发光器件和滤波器

    公开(公告)号：US07888691B2

    公开(公告)日：2011-02-15

    申请号：US12201428

    申请日：2008-08-29

    申请人： Michael R. Krames

    发明人： Michael R. Krames

    IPC分类号： H01L33/00

    CPC分类号： H01L33/504 ,  G02F1/133603 ,  H01L33/46

    摘要： A semiconductor light emitting device comprises a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer is adapted to emit first light having a first peak wavelength. A first wavelength converting material is adapted to absorb the first light and emit second light having a second peak wavelength. A second wavelength converting material is adapted to absorb either the first light or the second light and emit third light having a third peak wavelength. A filter is adapted to reflect fourth light having a fourth peak wavelength. The fourth light is either a portion of the second light or a portion of the third light. The filter is configured to transmit light having a peak wavelength longer or shorter than the fourth peak wavelength. The filter is disposed over the light emitting device in the path of at least a portion of the first, second, and third light.

    摘要翻译： 半导体发光器件包括设置在n型区域和p型区域之间的发光层。 发光层适于发射具有第一峰值波长的第一光。 第一波长转换材料适于吸收第一光并发射具有第二峰值波长的第二光。 第二波长转换材料适于吸收第一光或第二光并发射具有第三峰值波长的第三光。 滤光器适于反射具有第四峰值波长的第四光。 第四个光是第二个光的一部分或第三个光的一部分。 滤光器被配置为透射具有比第四峰值波长更长或更短的峰值波长的光。 滤光器在第一，第二和第三光的至少一部分的路径中设置在发光器件上方。

    Package-integrated thin film LED
    98.
    发明授权
    Package-integrated thin film LED 有权
    封装集成薄膜LED

    公开(公告)号：US07875533B2

    公开(公告)日：2011-01-25

    申请号：US12368213

    申请日：2009-02-09

    申请人： John E. Epler ,  Paul S. Martin ,  Michael R. Krames

    发明人： John E. Epler ,  Paul S. Martin ,  Michael R. Krames

    IPC分类号： H01L21/20

    CPC分类号： H01L33/48 ,  H01L24/73 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/32 ,  H01L33/486 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

    摘要： LED epitaxial layers (n-type, p-type, and active layers) are grown on a substrate. For each die, the n and p layers are electrically bonded to a package substrate that extends beyond the boundaries of the LED die such that the LED layers are between the package substrate and the growth substrate. The package substrate provides electrical contacts and conductors leading to solderable package connections. The growth substrate is then removed. Because the delicate LED layers were bonded to the package substrate while attached to the growth substrate, no intermediate support substrate for the LED layers is needed. The relatively thick LED epitaxial layer that was adjacent the removed growth substrate is then thinned and its top surface processed to incorporate light extraction features. There is very little absorption of light by the thinned epitaxial layer, there is high thermal conductivity to the package because the LED layers are directly bonded to the package substrate without any support substrate therebetween, and there is little electrical resistance between the package and the LED layers so efficiency (light output vs. power input) is high. The light extraction features of the LED layer further improves efficiency.

    摘要翻译： 在衬底上生长LED外延层（n型，p型和有源层）。 对于每个管芯，n和p层电连接到延伸超过LED管芯边界的封装衬底，使得LED层位于封装衬底和生长衬底之间。 封装衬底提供电触头和导体，导致可焊接的封装连接。 然后除去生长底物。 因为精细的LED层在附着于生长衬底的同时与封装衬底结合，所以不需要用于LED层的中间支撑衬底。 然后将与去除的生长衬底相邻的较厚的LED外延层变薄，并将其顶表面加工成掺入光提取特征。 通过减薄的外延层对光的吸收非常小，因为LED层直接接合到封装基板上而没有任何支撑基板，因此封装和LED之间的电阻很小，因此封装的导热性很高 层效率（光输出与功率输入）高。 LED层的光提取特性进一步提高了效率。

    Semiconductor light emitting devices including in-plane light emitting layers
    99.
    发明授权
    Semiconductor light emitting devices including in-plane light emitting layers 失效
    包括平面内发光层的半导体发光器件

    公开(公告)号：US07808011B2

    公开(公告)日：2010-10-05

    申请号：US10805424

    申请日：2004-03-19

    申请人： James C. Kim ,  John E. Epler ,  Nathan F. Gardner ,  Michael R. Krames ,  Jonathan J. Wierer, Jr.

    发明人： James C. Kim ,  John E. Epler ,  Nathan F. Gardner ,  Michael R. Krames ,  Jonathan J. Wierer, Jr.

    IPC分类号： H01L33/00

    CPC分类号： H01L33/18 ,  H01L25/0756 ,  H01L33/105 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

    摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.

    摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 20}或{10 10} InGaN发光层。 在一些实施例中，定向为使得由有源区域发射的大部分光的偏振的光通过的偏振片用作接触。 在一些实施例中，发射相同或不同有色光的两个有源区域被定向成使得通过由底部有源区域发射的大部分光的偏振光通过的偏振器分离，并且反射多数光的偏振光 由顶部活动区域发射。 在一些实施例中，偏振器反射由波长转换层散射的光。