公开(公告)号：US20230367411A1

公开(公告)日：2023-11-16

申请号：US18227374

申请日：2023-07-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime KIMURA ,  Shunpei YAMAZAKI

IPC: G06F3/041 ,  G02F1/1333 ,  G06F3/044

CPC classification number: G06F3/0412 ,  G02F1/13338 ,  G06F3/0443 ,  G06F3/04164 ,  G06F2203/04103 ,  G06F3/04184 ,  G06F3/041662

Abstract: A novel input device that is highly convenient or reliable is provided. A novel input/output device that is highly convenient or reliable is provided. A semiconductor device is provided. The present inventors have reached an idea of a structure including a plurality of conductive films configured to be capacitively coupled to an approaching object, a driver circuit that selects a conductive film from a plurality of conductive films in a predetermined order, and a sensor circuit having a function of supplying a search signal and a sensing signal.

公开(公告)号：US20230361128A1

公开(公告)日：2023-11-09

申请号：US18224666

申请日：2023-07-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/24 ,  H01L27/088 ,  H01L29/04

CPC classification number: H01L27/1225 ,  H01L29/7869 ,  H01L29/24 ,  H01L27/0883 ,  H01L29/045 ,  H01L29/78693 ,  H01L29/78696 ,  H01L29/78669 ,  H01L29/78678 ,  H01L27/1251 ,  H01L27/127 ,  H01L27/1288 ,  H01L21/02603

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

公开(公告)号：US20230343875A1

公开(公告)日：2023-10-26

申请号：US18208101

申请日：2023-06-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Masataka NAKADA

IPC: H01L29/786 ,  H01L27/146 ,  H10K59/121 ,  H01L27/12 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/78645 ,  H01L29/78696 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14634 ,  H10K59/1216 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78648

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

公开(公告)号：US20230335646A1

公开(公告)日：2023-10-19

申请号：US18211652

申请日：2023-06-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Tetsuhiro TANAKA ,  Hirokazu WATANABE ,  Yuhei SATO ,  Yasumasa YAMANE ,  Daisuke MATSUBAYASHI

IPC: H01L29/786 ,  H01L29/45 ,  H01L29/66

CPC classification number: H01L29/78618 ,  H01L29/7869 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78696

Abstract: A semiconductor device having a reduced amount of oxygen vacancy in a channel formation region of an oxide semiconductor is provided. Further, a semiconductor device which includes an oxide semiconductor and has improved electric characteristics is provided. Furthermore, a methods for manufacturing the semiconductor device is provided. An oxide semiconductor film is formed; a conductive film is formed over the oxide semiconductor film at the same time as forming a low-resistance region between the oxide semiconductor film and the conductive film; the conductive film is processed to form a source electrode and a drain electrode; and oxygen is added to the low-resistance region between the source electrode and the drain electrode, so that a channel formation region having a higher resistance than the low-resistance region is formed and a first low-resistance region and a second low-resistance region between which the channel formation region is positioned are formed.

公开(公告)号：US20230335180A1

公开(公告)日：2023-10-19

申请号：US18206117

申请日：2023-06-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kiyoshi KATO ,  Takahiko ISHIZU ,  Tatsuya ONUKI

IPC: G11C11/408 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H10B99/00

CPC classification number: G11C11/4085 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/78648 ,  H01L29/7869 ,  H10B99/00

Abstract: A memory device having long data retention time and high reliability is provided. The memory device includes a driver circuit and a plurality of memory cells, the memory cell includes a transistor and a capacitor, and the transistor includes a metal oxide in a channel formation region. The transistor includes a first gate and a second gate, and in a period during which the memory cell retains data, negative potentials are applied to the first gate and the second gate of the transistor.

公开(公告)号：US20230320000A1

公开(公告)日：2023-10-05

申请号：US18206134

申请日：2023-06-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiharu HIRAKATA ,  Yasuhiro JINBO ,  Shunpei YAMAZAKI

IPC: H05K5/00 ,  H10K50/84 ,  H10K59/121 ,  H10K77/10 ,  G09F9/30 ,  G06F1/16 ,  H01F1/147

CPC classification number: H05K5/0017 ,  H10K50/84 ,  H10K59/1213 ,  H10K77/111 ,  G09F9/301 ,  G06F1/1616 ,  H01F1/14708 ,  H01F1/14791 ,  H05K5/0086 ,  Y02E10/549 ,  H10K50/844

Abstract: A light-emitting device can be folded in such a manner that a flexible light-emitting panel is supported by a plurality of housings which are provided spaced from each other and the light-emitting panel is bent so that surfaces of adjacent housings are in contact with each other. Furthermore, in the light-emitting device, in which part or the whole of the housings have magnetism, the two adjacent housings can be fixed to each other by a magnetic force when the light-emitting device is used in a folded state.

公开(公告)号：US20230317832A1

公开(公告)日：2023-10-05

申请号：US18019924

申请日：2021-08-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Fumito ISAKA ,  Yoichi IIKUBO ,  Yuji EGI ,  Yasuhiro JINBO

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02631

Abstract: A method for modifying an insulating film is provided. The method includes a first step of preparing an insulating film containing hydrogen, and a second step of performing microwave treatment on the insulating film to release the hydrogen in the insulating film as water molecules, so that a hydrogen concentration in the insulating film is reduced. Note that the microwave treatment is preferably performed using an oxygen gas and an argon gas at a temperature range of higher than or equal to 200° C. and lower than or equal to 300° C., and the proportion of the flow rate of the oxygen gas to the total of the flow rate of the oxygen gas and the flow rate of the argon gas is preferably greater than 0 % and less than or equal to 50 %.

公开(公告)号：US20230309364A1

公开(公告)日：2023-09-28

申请号：US18023604

申请日：2021-08-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Shingo EGUCHI ,  Daisuke KUBOTA ,  Koji KUSUNOKI ,  Kazunori WATANABE

IPC: H10K59/80 ,  H10K39/34 ,  H10K59/35 ,  G06V40/13

CPC classification number: H10K59/8792 ,  H10K39/34 ,  H10K59/353 ,  G06V40/1318 ,  G06V40/1365

Abstract: A display device having both a touch detection function and a function of capturing an image of a shape of a fingerprint or a vein is provided. The display device includes a first light-emitting element, a second light-emitting element, a light-receiving element, and a light-blocking layer. The first light-emitting element and the light-receiving element are arranged on the same plane. The light-blocking layer is provided above the first light-emitting element and the light-receiving element. The second light-emitting element is provided above the light-blocking layer. The first light-emitting element has a function of emitting visible light upward. The second light-emitting element has a function of emitting invisible light upward. The light-receiving element is a photoelectric conversion element having sensitivity to visible light and invisible light. In a plan view, the light-blocking layer includes a portion positioned between the first light-emitting element and the light-receiving element. In the plan view, the second light-emitting element overlaps with the light-blocking layer and is positioned inside the outline of the light-blocking layer.

公开(公告)号：US20230299207A1

公开(公告)日：2023-09-21

申请号：US18201815

申请日：2023-05-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L29/04 ,  H01L29/22 ,  H01L29/221 ,  H01L29/24 ,  H01L29/26 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78696 ,  H01L29/66969 ,  H01L29/045 ,  H01L29/2206 ,  H01L29/221 ,  H01L29/24 ,  H01L29/263 ,  H01L29/78693 ,  H01L29/04 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/4908

Abstract: An embodiment is a semiconductor device which includes a first oxide semiconductor layer over a substrate having an insulating surface and including a crystalline region formed by growth from a surface of the first oxide semiconductor layer toward an inside; a second oxide semiconductor layer over the first oxide semiconductor layer; a source electrode layer and a drain electrode layer which are in contact with the second oxide semiconductor layer; a gate insulating layer covering the second oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a gate electrode layer over the gate insulating layer and in a region overlapping with the second oxide semiconductor layer. The second oxide semiconductor layer is a layer including a crystal formed by growth from the crystalline region.

公开(公告)号：US20230290992A1

公开(公告)日：2023-09-14

申请号：US18017191

申请日：2021-07-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shuhei YOSHITOMI ,  Tetsuji ISHITANI ,  Shunpei YAMAZAKI

IPC: H01M10/04 ,  H01M10/0583

CPC classification number: H01M10/0431 ,  H01M10/0404 ,  H01M10/0583

Abstract: At least part of a fabrication process of a secondary battery is automated. A highly reliable secondary battery is provided. The secondary battery is fabricated by placing a first electrode over a first exterior body; placing a separator over the first electrode; placing a second electrode over the separator; dripping an electrolyte on at least one of the first electrode, the separator, and the second electrode; impregnating the at least one of the first electrode, the separator, and the second electrode with the electrolyte; then placing a second exterior body over the first exterior body to cover the first electrode, the separator, and the second electrode; and sealing the first electrode, the separator, and the second electrode with the first exterior body and the second exterior body. The electrolyte is dripped from a position whose shortest distance from a surface where the electrolyte is dripped is greater than 0 mm and less than or equal to 1 mm.