公开(公告)号：US07172956B2

公开(公告)日：2007-02-06

申请号：US11095450

申请日：2005-03-31

申请人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

发明人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

IPC分类号： H01L21/28 ,  H01L29/06

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06

摘要： A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.

摘要翻译： 包含至少Al的III族氮化物底层，其位错密度为<= 1×10 11 / cm 2，和（002）面X射线摇摆曲线半宽 在集合的基材上形成<= 200秒的值。 在III族氮化物底层上方形成p型半导体层组，并且包括III族氮化物，其中Ga含量相对于总III族元素> 50％，载流子密度> 1×10 ^{16/3/3 3。 在p型半导体层组上形成发光层，并且包含多个相互隔离的岛状晶体。 在发光层上形成n型半导体层组，并且包含相对于> = 50％的总III族元素的Ga含量。}

公开(公告)号：US20050170539A1

公开(公告)日：2005-08-04

申请号：US11095450

申请日：2005-03-31

申请人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

发明人： Yuji Hori ,  Osamu Oda ,  Mitsuhiro Tanaka ,  Bruno Daudin ,  Eva Monroy

IPC分类号： C23C14/06 ,  C23C16/34 ,  H01L21/205 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L21/00

CPC分类号： H01L33/325 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/06

摘要： A group III nitride underlayer including at least Al, having a dislocation density of ≦1×1011/cm2 and a (002) plane X-ray rocking curve half-width value of ≦200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is ≧50% and in which a carrier density is ≧1×1016/cm3. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of ≧50%.

公开(公告)号：US06824935B2

公开(公告)日：2004-11-30

申请号：US10246461

申请日：2002-09-19

申请人： Mitsuhiro Tanaka ,  Yoshihide Koyama ,  Kazuya Yoshimura

发明人： Mitsuhiro Tanaka ,  Yoshihide Koyama ,  Kazuya Yoshimura

IPC分类号： G02F11335

CPC分类号： G02F1/133514 ,  G02F1/133555 ,  Y10T428/1086

摘要： The substrate having colored layers of the present invention includes: a substrate; a reflection layer formed on the substrate; and colored layers of different colors formed on the reflection layer and including a plurality of pixel regions, wherein each of the plurality of pixel regions includes a plurality of colorless regions that are substantially colorless.

摘要翻译： 具有本发明的着色层的基板包括：基板; 形成在基板上的反射层; 以及形成在反射层上并且包括多个像素区域的不同颜色的着色层，其中多个像素区域中的每一个包括基本上无色的多个无色区域。

公开(公告)号：US06727164B2

公开(公告)日：2004-04-27

申请号：US10060802

申请日：2002-01-30

申请人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka ,  Keiichiro Asai

发明人： Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka ,  Keiichiro Asai

IPC分类号： H01L2120

CPC分类号： C23C16/4401 ,  C23C16/4583

摘要： In fabricating a semiconducting nitride film by a MOCVD method, a susceptor tray is employed. The susceptor tray is constructed of a base plate and an outer member detachable from the base plate. A substrate for the film to be formed upon is set in a recessed portion formed by disposing the outer member on the base plate.

摘要翻译： 在通过MOCVD方法制造半导体氮化物膜时，使用基座托盘。 基座托盘由基板和可脱离基板的外部构件构成。 将要形成的膜的基底设置在通过将外部构件设置在基板上而形成的凹部中。

公开(公告)号：US06693302B2

公开(公告)日：2004-02-17

申请号：US10035001

申请日：2001-12-28

申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

IPC分类号： H01L2715

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/12

摘要： In a semiconductor light-emitting element, an underlayer is made of a high crystallinity Al-including semiconducting nitride material of which the FWHM is 90 seconds or below in full width at half maximum of an X-ray rocking curve. A light-emitting layer is made of a semiconducting nitride material including it least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements. The light-emitting layer can be omitted if at least one element selected from rare earth metal elements is incorporated in the underlayer.

摘要翻译： 在半导体发光元件中，底层由X射线摇摆曲线的半高宽度的FWHM为90秒以下的高结晶性Al的半导体氮化物材料构成。 发光层由包含选自Al，Ga和In中的至少一种元素的半导体氮化物材料制成，并且含有选自稀土金属元素中的至少一种元素。 如果从稀土金属元素中选择至少一种元素并入底层中，则可以省略发光层。

公开(公告)号：US06677708B2

公开(公告)日：2004-01-13

申请号：US10024664

申请日：2001-12-17

申请人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

发明人： Yuji Hori ,  Tomohiko Shibata ,  Osamu Oda ,  Mitsuhiro Tanaka

IPC分类号： H01J162

CPC分类号： H01L33/325 ,  H01L33/007 ,  H01L33/12

摘要： In a semi-conductor light-emitting element, an underlayer is made of a high crystallinity Al-including semi-conducting nitride material of which the FWHM is 90 second or below in X-ray rocking curve. Then, a light-emitting layer is made of a semi-conducting nitride material including at least one element selected from the group consisting of Al, Ga and In and containing at least one element selected from rare earth metal elements and transition metal elements.

摘要翻译： 在半导体发光元件中，底层由X射线摇摆曲线中FWHM为90秒以下的高结晶性Al-包含半导体氮化物材料制成。 然后，发光层由半导体氮化物材料制成，该半导体氮化物材料包括选自由Al，Ga和In组成的组中的至少一种元素，并含有至少一种选自稀土金属元素和过渡金属元素的元素。

公开(公告)号：US06661483B1

公开(公告)日：2003-12-09

申请号：US09620731

申请日：2000-07-20

申请人： Hiroyuki Moriwaki ,  Mitsuhiro Tanaka

发明人： Hiroyuki Moriwaki ,  Mitsuhiro Tanaka

IPC分类号： G02F11335

CPC分类号： G02F1/13363 ,  G02F1/1397 ,  G02F2001/133638 ,  G02F2203/02 ,  G02F2413/02 ,  G02F2413/08 ,  G02F2413/10

摘要： An object of the invention is to prevent color shifting which occurs in a liquid crystal display device in a white display state as well as in a black display state. The liquid crystal display device includes a single polarization layer, a single phase retardation layer, a reflective layer, and a liquid crystal layer, and produces a display by utilizing light reflected from the reflective layer. Based on the wavelength &lgr; of incident light, the retardation value ReF of the phase retardation layer is set approximately equal to (1/4+K/2) &lgr;, and the retardation value ReL of the liquid crystal layer is set approximately equal to (1/2+L/2)&lgr; (K=0, 1, 2, . . . : L=0, 1, 2, . . . ). The angle &Dgr;&phgr; that the absorption axis of the polarization layer makes with the retardation axis of the phase retardation layer is set as 0°

摘要翻译： 本发明的目的是防止在白色显示状态以及黑色显示状态下在液晶显示装置中发生的颜色偏移。 液晶显示装置包括单极化层，单相位延迟层，反射层和液晶层，并且通过利用从反射层反射的光产生显示。 基于入射光的波长λ，将相位延迟层的延迟值ReF设定为近似等于（1/4 + K / 2）λ，将液晶层的延迟值ReL设定为近似等于（ 1/2 + L / 2）λ（K = 0,1,2，...：L = 0,1,2，...）。 偏振层的吸收轴与相位延迟层的延迟轴形成的角度Deltaphi设定为0°

公开(公告)号：US06649493B2

公开(公告)日：2003-11-18

申请号：US10044778

申请日：2001-11-07

申请人： Keiichiro Asai ,  Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

发明人： Keiichiro Asai ,  Tomohiko Shibata ,  Yukinori Nakamura ,  Mitsuhiro Tanaka

IPC分类号： H01L2130

CPC分类号： C30B25/18 ,  C23C16/0218 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658

摘要： A method for fabricating a Group III nitride film is provided, including the steps of preparing a substrate, forming an underfilm and then forming the Group III nitride film on the underfilm. The underfilm is a Group III nitride comprising at least one Group III element and includes at least 50 atomic percent of elemental Al with respect to all of the Group III elements of the Group III nitride of the underfilm. The surface of the underfilm is contoured (concave-convex) and includes flat regions, and less than 50% of the underfilm surface is occupied by the flat regions.

摘要翻译： 提供了一种制造III族氮化物膜的方法，包括以下步骤：制备衬底，形成底膜，然后在底膜上形成III族氮化物膜。 底膜是包含至少一种III族元素的III族氮化物，并且相对于下膜的III族氮化物的所有III族元素包括至少50原子％的元素Al。 底膜的表面是轮廓（凹凸）并且包括平坦区域，并且小于50％的底膜表面被平坦区域占据。

公开(公告)号：US06618107B1

公开(公告)日：2003-09-09

申请号：US09648782

申请日：2000-08-28

申请人： Mitsuhiro Tanaka ,  Kazuya Yoshimura

发明人： Mitsuhiro Tanaka ,  Kazuya Yoshimura

IPC分类号： G02F11335

CPC分类号： G02F1/133514 ,  G02F1/133553

摘要： A reflection-type color liquid crystal display (LCD) device is made up of a reflecting film, a color filter in which a resin black matrix is formed between color patterns, and a liquid crystal layer, which are disposed in this order between a pair of glass substrates. Furthermore, a light transmissive protective film for protecting the reflecting film when electrodepositing is formed on the reflecting film, and on which an electrodepositing transparent conductive layer is formed, and on which the color filter is formed by an electrodeposition method, thereby accurately forming the resin black matrix which is suitable for reflection-type LCD devices on a reflectional function layer provided within a liquid crystal cell.

摘要翻译： 反射型彩色液晶显示器（LCD）装置由反射膜，彩色图案之间形成树脂黑矩阵的滤色器和液晶层构成，液晶层以一对之间的顺序排列 的玻璃基板。 此外，在反射膜上形成用于保护反射膜的透光保护膜，并且在其上形成电沉积透明导电层，并通过电沉积法形成滤色器，由此精确地形成树脂 黑色矩阵，其适用于设置在液晶单元内的反射功能层上的反射型LCD器件。

公开(公告)号：US06534795B2

公开(公告)日：2003-03-18

申请号：US09994370

申请日：2001-11-27

申请人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

发明人： Yuji Hori ,  Tomohiko Shibata ,  Mitsuhiro Tanaka ,  Osamu Oda

IPC分类号： H01L3112

CPC分类号： H01L33/06 ,  H01L33/007 ,  H01L33/12 ,  H01L33/18

摘要： In a semiconductor light-emitting element, an underlayer is composed of a high crystallinity AlN layer having a FWHM in X-ray rocking curve of 90 seconds or below, and a first cladding layer is composed of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer.