公开(公告)号：US20110198595A1

公开(公告)日：2011-08-18

申请号：US13093897

申请日：2011-04-26

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/786

CPC分类号： H01L29/4908 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/458 ,  H01L29/786 ,  H01L29/78696

摘要： It is an object to provide a liquid crystal display device including a thin film transistor with high electric characteristics and high reliability. As for a liquid crystal display device including an inverted staggered thin film transistor of a channel stop type, the inverted staggered thin film transistor includes a gate electrode, a gate insulating film over the gate electrode, a microcrystalline semiconductor film including a channel formation region over the gate insulating film, a buffer layer over the microcrystalline semiconductor film, and a channel protective layer which is formed over the buffer layer so as to overlap with the channel formation region of the microcrystalline semiconductor film.

摘要翻译： 本发明的目的是提供一种包括具有高电特性和高可靠性的薄膜晶体管的液晶显示装置。 对于包括沟道阻挡型倒置交错薄膜晶体管的液晶显示装置，反交错薄膜晶体管包括栅电极，栅电极上的栅极绝缘膜，微晶半导体膜，包括沟道形成区域 栅极绝缘膜，微晶半导体膜上的缓冲层，以及形成在缓冲层上以与微晶半导体膜的沟道形成区重叠的沟道保护层。

公开(公告)号：US20110187328A1

公开(公告)日：2011-08-04

申请号：US13082506

申请日：2011-04-08

申请人： Shunpei YAMAZAKI ,  Takeshi OSADA

发明人： Shunpei YAMAZAKI ,  Takeshi OSADA

IPC分类号： H02J7/04

CPC分类号： H01M10/46 ,  G06K19/0702 ,  G06K19/0707 ,  G06K19/0723 ,  H01M6/40 ,  H01M10/425 ,  H01M10/44 ,  H01M10/48 ,  H02J7/025 ,  H02J17/00 ,  H02J50/20

摘要： To simplify charging of a battery in a power storage device which includes the battery. Further, to provide a wireless power storage device which can transmit and receive information without the task of replacing a battery for drive power supply, which becomes necessary when the battery depletes over time, being performed. An antenna circuit, a battery which is electrically connected to the antenna circuit via a rectifier circuit, and a load portion which is electrically connected to the battery are provided. The battery is charged when an electromagnetic wave received by the antenna circuit is input to the battery via the rectifier circuit, and discharged when electrical power which has been charged is supplied to the load portion. The battery is charged cumulatively, and the battery is discharged in pulses.

摘要翻译： 为了简化在包括电池的蓄电装置中的电池的充电。 此外，提供一种能够发送和接收信息的无线电力存储装置，而无需更换当电池随时间耗尽时变得必要的用于驱动电源的电池。 提供天线电路，经由整流电路与天线电路电连接的电池以及与电池电连接的负载部。 当由天线电路接收到的电磁波经由整流电路输入电池时，电池被充电，并且当已经充电的电力被提供给负载部分时，电池被放电。 电池累计充电，电池以脉冲方式放电。

公开(公告)号：US20110180811A1

公开(公告)日：2011-07-28

申请号：US13081519

申请日：2011-04-07

申请人： Yukie SUZUKI ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

发明人： Yukie SUZUKI ,  Yasuyuki ARAI ,  Shunpei YAMAZAKI

IPC分类号： H01L29/161 ,  H01L29/20 ,  H01L29/786

CPC分类号： H01Q9/0407 ,  G06K19/07745 ,  G06K19/07749 ,  G06K19/07786 ,  H01L23/66 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L27/088 ,  H01L2223/6677 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32225 ,  H01L2224/32265 ,  H01L2224/73204 ,  H01L2924/00014 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/12041 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/3011 ,  H01M10/0436 ,  H01M10/465 ,  H01M2220/30 ,  H01Q1/2208 ,  H01Q1/2283 ,  H01Q23/00 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： It is an object to provide a wireless chip which can increase a mechanical strength, and a wireless chip with a high durability. A wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, and a conductive layer connecting the chip and the antenna. Further, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a sensor device, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the sensor device. Moreover, a wireless chip includes a transistor including a field-effect transistor, an antenna including a dielectric layer sandwiched between conductive layers, a battery, a conductive layer connecting the chip and the antenna, and a conductive layer connecting the chip and the battery.

摘要翻译： 本发明的目的是提供一种能够提高机械强度的无线芯片，以及具有高耐久性的无线芯片。 无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线以及连接芯片和天线的导电层。 此外，无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线，传感器装置，连接芯片和天线的导电层以及连接芯片和传感器的导电层 设备。 此外，无线芯片包括具有场效应晶体管的晶体管，包含夹在导电层之间的电介质层的天线，电池，连接芯片和天线的导电层以及连接芯片和电池的导电层。

公开(公告)号：US20110176263A1

公开(公告)日：2011-07-21

申请号：US13005775

申请日：2011-01-13

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA

IPC分类号： H05K7/00

CPC分类号： G06F1/1635 ,  G06F1/1626 ,  G06F1/1637 ,  G06F1/263 ,  H01L29/786

摘要： A portable electronic device that can operate even when electric power supplied through contactless charge by electromagnetic induction is low is provided. The portable electronic device includes a reflective liquid crystal display which includes a transistor including an oxide semiconductor, a power source portion which includes a rechargeable battery capable of charge by contactless charge, and a signal processing portion which includes a nonvolatile semiconductor memory device. In the portable electronic device, electric power stored in the rechargeable battery is used in the reflective liquid crystal display and the signal processing portion.

摘要翻译： 提供即使在通过电磁感应的非接触充电提供的电力低的情况下也能够操作的便携式电子设备。 便携式电子设备包括反射型液晶显示器，其包括具有氧化物半导体的晶体管，包括能够通过非接触电荷充电的可再充电电池的电源部分和包括非易失性半导体存储器件的信号处理部分。 在便携式电子装置中，存储在可再充电电池中的电力用于反射型液晶显示器和信号处理部分。

公开(公告)号：US20110169003A1

公开(公告)日：2011-07-14

申请号：US13052337

申请日：2011-03-21

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L33/08

CPC分类号： G06F3/041 ,  G02F1/13454 ,  G02F2001/13456 ,  H01L27/124 ,  H01L29/42384 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion (182) of a connecting wiring (183) on an active matrix substrate is electrically connected to an FPC (191) by an anisotropic conductive film (195). The connecting wiring (183) is manufactured in the same process with a source/drain wiring of a TFT on the active matrix substrate, and is made of a lamination film of a metallic film and a transparent conductive film. In the connecting portion with the anisotropic conductive film (195), a side surface of the connecting wiring (183) is covered with a protecting film (173) made of an insulating material. Accordingly, the portion in which the metallic film is surrounded by the transparent conductive film, the insulating base film, and the protecting film (173) to which it is in contact with, can be avoided from exposure to air because the side surface of the metallic film of the connecting wiring is covered with the protecting film (173).

摘要翻译： 为了提高与诸如液晶显示面板的半导体装置中的各向异性导电膜的接触的可靠性，有源矩阵基板上的连接布线（183）的端子部分（182）电连接到FPC（191） 通过各向异性导电膜（195）。 连接配线（183）以与有源矩阵基板上的TFT的源极/漏极配线相同的工艺制造，并且由金属膜和透明导电膜的层叠膜制成。 在与各向异性导电膜（195）的连接部分中，连接布线（183）的侧表面被由绝缘材料制成的保护膜（173）覆盖。 因此，可以避免金属膜被透明导电膜，绝缘基膜和与其接触的保护膜（173）包围的部分暴露于空气中，因为这样 连接布线的金属膜被保护膜（173）覆盖。

公开(公告)号：US20110140108A1

公开(公告)日：2011-06-16

申请号：US12960659

申请日：2010-12-06

申请人： Hajime KIMURA ,  Atsushi UMEZAKI ,  Shunpei YAMAZAKI

发明人： Hajime KIMURA ,  Atsushi UMEZAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L27/088

CPC分类号： H01L27/124 ,  G02F1/133345 ,  G02F1/1334 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2001/13345 ,  G09G3/2007 ,  G09G3/36 ,  G09G2300/0426 ,  G09G2310/0289 ,  G09G2310/08 ,  G09G2320/0252 ,  G09G2320/0257 ,  G09G2330/021 ,  H01L21/823412 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/247 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/78693 ,  H01L29/78696

摘要： An object is to improve the drive capability of a semiconductor device. The semiconductor device includes a first transistor and a second transistor. A first terminal of the first transistor is electrically connected to a first wiring. A second terminal of the first transistor is electrically connected to a second wiring. A gate of the second transistor is electrically connected to a third wiring. A first terminal of the second transistor is electrically connected to the third wiring. A second terminal of the second transistor is electrically connected to a gate of the first transistor. A channel region is formed using an oxide semiconductor layer in each of the first transistor and the second transistor. The off-state current of each of the first transistor and the second transistor per channel width of 1 μm is 1 aA or less.

摘要翻译： 目的在于提高半导体器件的驱动能力。 半导体器件包括第一晶体管和第二晶体管。 第一晶体管的第一端子电连接到第一布线。 第一晶体管的第二端子电连接到第二布线。 第二晶体管的栅极电连接到第三布线。 第二晶体管的第一端子电连接到第三布线。 第二晶体管的第二端子电连接到第一晶体管的栅极。 在第一晶体管和第二晶体管的每一个中使用氧化物半导体层形成沟道区。 每个通道宽度为1μm的第一晶体管和第二晶体管的截止电流为1AA以下。

公开(公告)号：US20110134647A1

公开(公告)日：2011-06-09

申请号：US12944195

申请日：2010-11-11

申请人： Jiro NISHIDA ,  Yuji EGI ,  Takeshi NISHI ,  Shunpei YAMAZAKI

发明人： Jiro NISHIDA ,  Yuji EGI ,  Takeshi NISHI ,  Shunpei YAMAZAKI

IPC分类号： F21V5/04

CPC分类号： G02B1/118 ,  G02F1/133504 ,  G02F2201/38 ,  H01L51/5268 ,  H01L51/5281 ,  H05B33/22

摘要： An object of the present invention is to provide an antireflective film having an anti-reflection function with which reflection of external light which is incident on the antireflective film can be further reduced and a high-visibility display device having such an antireflective film. The tops of the plurality of pyramidal projections are evenly spaced and each side of the base of a pyramidal projection is in contact with one side of the base of an adjacent pyramidal projection. That is, one pyramidal projection is surrounded by other pyramidal projections, and the base of the pyramidal projection and the base of the adjacent pyramidal projection have a side in common.

摘要翻译： 本发明的目的是提供一种具有抗反射功能的防反射膜，能够进一步降低入射到防反射膜上的外部光的反射，并且具有这种抗反射膜的高可视度显示装置。 多个金字塔形突起的顶部是均匀间隔的，金字塔形突起的基部的每一侧与相邻金字塔形突起的基部的一侧接触。 也就是说，一个金字塔形突起被其他金字塔形突起包围，金字塔形突起的基部和相邻金字塔形突起的基部具有共同的一面。

公开(公告)号：US20110127579A1

公开(公告)日：2011-06-02

申请号：US12951225

申请日：2010-11-22

申请人： Shunpei YAMAZAKI

发明人： Shunpei YAMAZAKI

IPC分类号： H01L29/786 ,  B05D3/00 ,  B32B37/02 ,  C23C14/34 ,  B32B9/00 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/16 ,  H01L27/1225 ,  H01L29/66765 ,  H01L29/66969 ,  H01L29/78609 ,  Y10T156/10 ,  Y10T428/265 ,  Y10T428/31678

摘要： One embodiment is a method for manufacturing a stacked oxide material, including the steps of forming a first oxide component over a base component, causing crystal growth which proceeds from a surface toward an inside of the first oxide component by first heat treatment to form a first oxide crystal component at least partly in contact with the base component, forming a second oxide component over the first oxide crystal component; and causing crystal growth by second heat treatment using the first oxide crystal component as a seed to form a second oxide crystal component.

摘要翻译： 一个实施方案是一种叠层氧化物材料的制造方法，包括以下步骤：在基底成分上形成第一氧化物组分，通过第一热处理从第一氧化物组分的表面向内部进行晶体生长，形成第一氧化物组分 氧化物晶体成分至少部分地与所述基底成分接触，在所述第一氧化物晶体成分上形成第二氧化物成分; 并且通过使用第一氧化物晶体组分作为种子进行第二次热处理以形成第二氧化物晶体组分的晶体生长。

公开(公告)号：US20110111558A1

公开(公告)日：2011-05-12

申请号：US12938538

申请日：2010-11-03

申请人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Toru TAKAYAMA

发明人： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Toru TAKAYAMA

IPC分类号： H01L21/336 ,  C23C14/34 ,  C23C14/08

CPC分类号： H01L21/6719 ,  H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/67207 ,  H01L29/66969 ,  H01L29/7869

摘要： An object is to provide a deposition apparatus for forming a thin film which contains few impurities such as a hydrogen atom or a carbon atom. Further, an object is to provide a method for forming a thin film containing few impurities. Furthermore, an object is to provide a method for manufacturing a highly reliable semiconductor element including an oxide semiconductor film containing few impurities. A deposition apparatus can be provided for forming a thin film which contains few impurities such as a compound containing a hydrogen atom such as H2O, a compound containing a carbon atom, a hydrogen atom, or a carbon atom can be provided. Further, a method for forming a thin film containing few impurities can be provided. Furthermore, a method for forming a highly reliable semiconductor element including an oxide semiconductor film containing few impurities can be provided.

摘要翻译： 本发明的目的是提供一种用于形成含有少量诸如氢原子或碳原子的杂质的薄膜的沉积装置。 此外，目的在于提供一种形成含有少量杂质的薄膜的方法。 此外，目的在于提供一种制造高可靠性的半导体元件的方法，所述半导体元件包括少量杂质的氧化物半导体膜。 可以提供沉积装置，用于形成含有少量杂质的薄膜，例如含有氢原子的化合物如H 2 O，含有碳原子的化合物，氢原子或碳原子。 此外，可以提供形成含有少量杂质的薄膜的方法。 此外，可以提供形成包含少量杂质的氧化物半导体膜的高可靠性半导体元件的方法。

公开(公告)号：US20110095292A1

公开(公告)日：2011-04-28

申请号：US12983538

申请日：2011-01-03

申请人： Toru TAKAYAMA ,  Shunpei YAMAZAKI ,  Kengo AKIMOTO

发明人： Toru TAKAYAMA ,  Shunpei YAMAZAKI ,  Kengo AKIMOTO

IPC分类号： H01L29/12

CPC分类号： H01L21/0217 ,  B32B17/04 ,  B32B17/06 ,  C23C14/0652 ,  C23C14/5846 ,  H01L21/02266 ,  H01L21/3145 ,  H01L21/3185 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3297 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66757 ,  H01L2224/16225 ,  H01L2924/181 ,  H01L2924/00012

摘要： An object of the present invention is to apply an insulating film of cure and high quality that is suitably applicable as gate insulating film and protective film to a technique that the insulating film is formed on the glass substrate under a temperature of strain point or lower, and to a semiconductor device realizing high efficiency and high reliability by using it. In a semiconductor device of the present invention, a gate insulating film of a field effect type transistor with channel length of from 0.35 to 2.5 μm in which a silicon nitride film is formed over a crystalline semiconductor film through a silicon oxide film, wherein the silicon nitride film contains hydrogen with the concentration of 1×1021/cm3 or less and has characteristic of an etching rate of 10 nm/min or less with respect to mixed solution containing an ammonium hydrogen fluoride (NH4HF2) of 7.13% and an ammonium fluoride (NH4F) of 15.4%.

摘要翻译： 本发明的目的是将适合作为栅极绝缘膜和保护膜的固化和高质量的绝缘膜应用于在应变点或更低的温度下在玻璃基板上形成绝缘膜的技术， 以及通过使用它实现高效率和高可靠性的半导体器件。 在本发明的半导体器件中，通过氧化硅膜在晶体半导体膜上形成沟道长度为0.35〜2.5μm的场效应晶体管的栅极绝缘膜，其中，硅 氮化物膜含有浓度为1×1021 / cm3以下的氢，相对于含有7.13％的氟化氢铵（NH4HF2）和氟化铵（NH4HF2）的混合溶液，蚀刻速率为10nm /分钟以下的特性 NH4F）为15.4％。