Semiconductor Device and Manufacturing Method Thereof
    91.
    发明申请
    Semiconductor Device and Manufacturing Method Thereof 有权
    半导体器件及其制造方法

    公开(公告)号:US20110317108A1

    公开(公告)日:2011-12-29

    申请号:US13225634

    申请日:2011-09-06

    IPC分类号: G02F1/1335

    摘要: The aperture ratio of a pixel of a reflecting type display device is improved without increasing the number of masks and without using a black mask. Locations for light shielding between pixels are arranged such that a pixel electrode overlaps with a portion of a gate wiring and a source wiring. In locations for shielding TFTs, a high pixel aperture ratio is realized by forming a color filter (red, or lamination of red and blue), formed on an opposing substrate.

    摘要翻译: 反射型显示装置的像素的开口率在不增加掩模的数量而不使用黑色掩模的情况下得到改善。 在像素之间进行遮光的位置被布置成使得像素电极与栅极布线和源极布​​线的一部分重叠。 在用于屏蔽TFT的位置中,通过形成在相对的基板上形成滤色器(红色或蓝色的叠层)来实现高像素孔径比。

    Semiconductor device and method of manufacturing therefor
    94.
    发明授权
    Semiconductor device and method of manufacturing therefor 有权
    半导体装置及其制造方法

    公开(公告)号:US08023042B2

    公开(公告)日:2011-09-20

    申请号:US10913415

    申请日:2004-08-09

    IPC分类号: H01L21/00

    摘要: In an active matrix type liquid crystal display device, in which functional circuits such as a shift register circuit and a buffer circuit are incorporated on the same substrate, an optimal TFT structure is provided along with the aperture ratio of a pixel matrix circuit is increased. There is a structure in which an n-channel TFT, with a third impurity region which overlaps a gate electrode, is formed in a buffer circuit, etc., and an n-channel TFT, in which a fourth impurity region which does not overlap the gate electrode, is formed in a pixel matrix circuit. A storage capacitor formed in the pixel matrix circuit is formed by a light shielding film, a dielectric film formed on the light shielding film, and a pixel electrode. Al is especially used in the light shielding film, and the dielectric film is formed anodic oxidation process, using an Al oxide film.

    摘要翻译: 在有源矩阵型液晶显示装置中,其中诸如移位寄存器电路和缓冲电路的功能电路并入同一衬底上,提供了最佳的TFT结构,同时增加了像素矩阵电路的孔径比。 存在这样的结构,其中在缓冲电路等中形成具有与栅电极重叠的第三杂质区的n沟道TFT,以及n沟道TFT,其中不重叠的第四杂质区 栅电极形成在像素矩阵电路中。 形成在像素矩阵电路中的保持电容器由遮光膜,形成在遮光膜上的电介质膜和像素电极形成。 Al特别用于遮光膜,并且使用Al氧化物膜形成电介质膜的阳极氧化工艺。

    Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same
    96.
    发明授权
    Semiconductor thin film and method of manufacturing the same and semiconductor device and method of manufacturing the same 有权
    半导体薄膜及其制造方法以及半导体装置及其制造方法

    公开(公告)号:US08008693B2

    公开(公告)日:2011-08-30

    申请号:US11670462

    申请日:2007-02-02

    摘要: A thin film semiconductor transistor structure has a substrate with a dielectric surface, and an active layer made of a semiconductor thin film exhibiting a crystallinity as equivalent to the single-crystalline. To fabricate the transistor, the semiconductor thin film is formed on the substrate, which film includes a mixture of a plurality of crystals which may be columnar crystals and/or capillary crystal substantially parallel to the substrate. The resultant structure is then subject to thermal oxidation in a chosen atmosphere containing halogen, thereby removing away any metallic element as contained in the film. This may enable formation of a mono-domain region in which the individual columnar or capillary crystal is in contact with any adjacent crystals and which is capable of being substantially deemed to be a single-crystalline region without presence or inclusion of any crystal grain boundaries therein. This region is for use in forming the active layer of the transistor.

    摘要翻译: 薄膜半导体晶体管结构具有具有电介质表面的基板和由半导体薄膜制成的有源层,其表现出与单晶相当的结晶度。 为了制造晶体管,在衬底上形成半导体薄膜,该薄膜包括可以是基本上平行于衬底的柱状晶体和/或毛细晶体的多个晶体的混合物。 然后在所选择的含有卤素的气氛中对所得结构进行热氧化,从而去除膜中所含的任何金属元素。 这可以形成单畴区域,其中单个柱状或毛细晶体晶体与任何相邻晶体接触,并且其能够基本上被认为是单晶区域,而不存在或包含任何晶粒边界 。 该区域用于形成晶体管的有源层。

    LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE
    99.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND ELECTRONIC DEVICE 审中-公开
    液晶显示器件和电子器件

    公开(公告)号:US20110157254A1

    公开(公告)日:2011-06-30

    申请号:US12978798

    申请日:2010-12-27

    IPC分类号: G09G3/36 G09G5/10 G02F1/1335

    摘要: It is an object to provide a liquid crystal display device which can recognize image display even in the dim surrounding environment of the liquid crystal display device. It is another object to provide a liquid crystal display device which can perform image display in both modes: a reflective mode in which external light is used as an illumination light source; and a transmissive mode in which a backlight is used. A plurality pairs of a pixel in which incident light through a liquid crystal layer is reflected and a light-transmitting pixel are provided; therefore, display image can be performed in both modes: the reflective mode in which external light is used as an illumination light source; and the transmissive mode in which a backlight is used. Further, each reflective pixel and light-transmitting pixel may be connected to an independent signal driver circuit.

    摘要翻译: 本发明的目的是提供即使在液晶显示装置的昏暗的周围环境中也可以识别图像显示的液晶显示装置。 另一个目的是提供一种可以以两种模式执行图像显示的液晶显示装置:其中使用外部光作为照明光源的反射模式; 以及使用背光的透射模式。 多个成对的像素,其中通过液晶层的入射光被反射并设置有透光像素; 因此,可以以两种模式执行显示图像:将外部光用作照明光源的反射模式; 以及使用背光的透射模式。 此外,每个反射像素和透光像素可以连接到独立的信号驱动器电路。