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    Nanostructured Devices
    91.
    发明申请
    Nanostructured Devices 有权
    纳米结构器件

    公开(公告)号：US20100122725A1

    公开(公告)日：2010-05-20

    申请号：US12619092

    申请日：2009-11-16

    Applicant: Brent A. Buchine ,  Faris Modawar ,  Marcie R. Black

    Inventor： Brent A. Buchine ,  Faris Modawar ,  Marcie R. Black

    IPC: H01L31/0352 ,  H01L31/18 ,  H01L33/00

    CPC classification number: H01L31/035254 ,  H01L31/02363 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/068 ,  Y02E10/50

    Abstract: A photovoltaic device is provided. It comprises at least two electrical contacts, p type dopants and n type dopants. It also comprises a bulk region and nanowires in an aligned array which contact the bulk region. All nanowires in the array have one predominant type of dopant, n or p, and at least a portion of the bulk region also comprises that predominant type of dopant. The portion of the bulk region comprising the predominant type of dopant typically contacts the nanowire array. The photovoltaic devices' p-n junction would then be found in the bulk region. The photovoltaic devices would commonly comprise silicon.

    Abstract translation: 提供光伏器件。 它包括至少两个电触点，p型掺杂剂和n型掺杂剂。 它还包括接触大块区域的排列阵列中的体区域和纳米线。 阵列中的所有纳米线具有一种主要类型的掺杂剂n或p，并且本体区域的至少一部分还包括该主要类型的掺杂剂。 包含主要类型掺杂剂的体区的部分通常接触纳米线阵列。 光伏器件的p-n结将在大块区域中被发现。 光伏器件通常包括硅。

    Nanowires in thin-film silicon solar cells
    96.
    发明申请
    Nanowires in thin-film silicon solar cells 有权
    纳米线在薄膜硅太阳能电池中的应用

    公开(公告)号：US20080047604A1

    公开(公告)日：2008-02-28

    申请号：US11509886

    申请日：2006-08-25

    Applicant: Bastiaan Arie Korevaar ,  Loucas Tsakalakos

    Inventor： Bastiaan Arie Korevaar ,  Loucas Tsakalakos

    IPC: H01L31/00

    CPC classification number: H01L31/035254 ,  B82Y20/00 ,  H01L31/035245 ,  H01L31/03529 ,  H01L31/075 ,  Y02E10/548 ,  Y10S977/712 ,  Y10S977/72 ,  Y10S977/762 ,  Y10S977/948 ,  Y10S977/954

    Abstract: In some embodiments, the present invention is directed to photovoltaic (PV) devices comprising silicon (Si) nanowires as active PV elements, wherein such devices are typically thin film Si solar cells. Generally, such solar cells are of the p-i-n type and can be fabricated for front and/or backside (i.e., top and/or bottom) illumination. Additionally, the present invention is also directed at methods of making and using such devices, and to systems and modules (e.g., solar panels) employing such devices.

    Abstract translation: 在一些实施例中，本发明涉及包含硅（Si）纳米线作为有源PV元件的光伏（PV）器件，其中这种器件通常是薄膜Si太阳能电池。 通常，这种太阳能电池是p-i-n型，并且可以制造用于正面和/或背面（即，顶部和/或底部）照明。 此外，本发明还涉及制造和使用这种装置以及采用这种装置的系统和模块（例如，太阳能电池板）的方法。

    Self-aligned implanted waveguide detector
    97.
    发明授权
    Self-aligned implanted waveguide detector 失效
    自对准植入波导检测器

    公开(公告)号：US07205624B2

    公开(公告)日：2007-04-17

    申请号：US10959897

    申请日：2004-10-06

    Applicant: Francisco A. Leon ,  Lawrence C. West

    Inventor： Francisco A. Leon ,  Lawrence C. West

    IPC: H01L31/00

    CPC classification number: H01L31/035254 ,  B82Y20/00 ,  G02B6/12004

    Abstract: A method of fabricating a detector, the method including forming an island of detector core material on a substrate, the island having a horizontally oriented top end, a vertically oriented first sidewall, and a vertically oriented second sidewall that is opposite said first sidewall; implanting a first dopant into the first sidewall to form a first conductive region that has a top end that is part of the top end of the island; implanting a second dopant into the second sidewall to form a second conductive region that has a top end that is part of the top end of the island; fabricating a first electrical connection to the top end of the first conductive region; and fabricating a second electrical connection to the top end of the second conductive region.

    Abstract translation: 一种制造检测器的方法，所述方法包括在衬底上形成检测器芯材料岛，所述岛具有水平取向的顶端，垂直取向的第一侧壁和与所述第一侧壁相对的垂直取向的第二侧壁; 将第一掺杂剂注入到所述第一侧壁中以形成具有作为所述岛的顶端的一部分的顶端的第一导电区域; 将第二掺杂剂注入所述第二侧壁中以形成具有作为所述岛的顶端的一部分的顶端的第二导电区域; 制造到第一导电区域的顶端的第一电连接; 以及制造到所述第二导电区域的顶端的第二电连接。

    Solution to thermal budget
    98.
    发明授权
    Solution to thermal budget 失效
    热预算解决方案

    公开(公告)号：US07101725B2

    公开(公告)日：2006-09-05

    申请号：US10896754

    申请日：2004-07-22

    Applicant: Yuichi Wada ,  Francisco A. Leon

    Inventor： Yuichi Wada ,  Francisco A. Leon

    IPC: H01L21/00

    CPC classification number: G02B6/12004 ,  B82Y20/00 ,  C30B29/12 ,  C30B33/00 ,  G02B6/12 ,  G02B6/4214 ,  G02B6/43 ,  H01L21/84 ,  H01L27/1203 ,  H01L31/035254

    Abstract: A method of fabricating on optical detector, the method including providing a substrate that includes an optical waveguide formed therein and having a surface for fabricating microelectronic circuitry thereon; fabricating microelectronic circuitry on the substrate, the fabricating involving a plurality of sequential process phases; after a selected one of the plurality of sequential process phases has occurred and before the next process phase after the selected one of the plurality of process phases begins, fabricating an optical detector within the optical waveguide; and after fabricating the optical detector in the waveguide, completing the plurality of sequential process phases for fabricating the microelectronic circuitry.

    Abstract translation: 一种在光学检测器上制造的方法，所述方法包括提供包括其中形成的光波导并且具有用于在其上制造微电子电路的表面的衬底; 在衬底上制造微电子电路，该制造涉及多个连续的工艺阶段; 在所述多个顺序处理阶段中的所选择的一个已经发生并且在所述多个处理阶段中所选择的一个处理阶段开始之后的下一个处理阶段之前，在所述光波导内制造光学检测器; 并且在波导中制造光学检测器之后，完成用于制造微电子电路的多个顺序处理阶段。

    Horizontal access semiconductor photo detector
    99.
    发明申请
    Horizontal access semiconductor photo detector 失效
    水平存取半导体光电探测器

    公开(公告)号：US20040013367A1

    公开(公告)日：2004-01-22

    申请号：US10276993

    申请日：2003-07-14

    Inventor： David C W Herbert ,  Edward T R Chidley ,  Roger T Carline ,  Weng Y Leong ,  David R Wight ,  Davis J Robbins ,  John M Heaton

    IPC: H01L031/0232

    CPC classification number: H01L31/035254 ,  B82Y20/00 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/1075 ,  Y02E10/50

    Abstract: A horizontal access semiconductor photo detector (2) comprises a horizontal light absorbing layer (8) for converting light into photo-current which layer is configured to confine light within it in whispering gallery modes of propagation. The detector is configured to have a first waveguide portion (18) and a second light confining portion (20, 21) arranged such that the waveguide portion couples light into the detector and transfers light into the light confining portion so as to excite whispering gallery modes of propagation around the light confining portion. The light absorbing layer may be part of the light confining portion or alternatively light can be coupled into the light confining portion or alternatively light can be coupled into the light absorbing layer from the light confining portion by evanescent coupling. The excitation of whispering gallery modes within the light absorbing layer significantly increases the effective absorption coefficient of the light absorbing layer.

    Abstract translation: 水平存取半导体光电检测器（2）包括用于将光转换为光电流的水平光吸收层（8），该层被配置为将灯限制在耳语中的传播模式中。 检测器被配置为具有布置成使得波导部分将光耦合到检测器中并将光传输到光限制部分中的第一波导部分（18）和第二光限制部分（20,21），以激发耳语画廊模式 在光限制部分周围的传播。 光吸收层可以是光限制部分的一部分，或者光可以耦合到光限制部分中，或者可替换地，光可以通过渐逝耦合从光限制部分耦合到光吸收层中。 在光吸收层内的耳语画廊模式的激发显着增加了光吸收层的有效吸收系数。

    Superlattice infrared photodetector having front and rear blocking layers to enhance background limited performance
    100.
    发明授权
    Superlattice infrared photodetector having front and rear blocking layers to enhance background limited performance 失效
    超晶格红外光电探测器具有前后阻挡层，以增强背景限制性能

    公开(公告)号：US06433354B1

    公开(公告)日：2002-08-13

    申请号：US09764268

    申请日：2001-01-19

    Applicant: Chieh-Hsiung Kuan ,  Jen-Ming Chen ,  Chun-Chi Chen ,  Mao-Chieh Hsu

    Inventor： Chieh-Hsiung Kuan ,  Jen-Ming Chen ,  Chun-Chi Chen ,  Mao-Chieh Hsu

    IPC: H01L2906

    CPC classification number: B82Y20/00 ,  H01L31/035236 ,  H01L31/035254

    Abstract: A superlattice infrared photodetector is disclosed, which can be fabricated easily by molecular beam epitaxy, has low power consumption and small dark current. Furthermore, the working temperature to operate the detector under background limited performance can be achieved by cooling down to the liquid nitrogen temperature. That is, the front and rear sides of the superlattice structure are added with blocking layers with sufficient height and width. The thickness is about 50 nm and the height of the energy barrier must be higher than the bottom of the second miniband of the superlattice structure by a value of more than 10 meV. Thereby, with the generation of photocurrent, the dark current is reduced at the same time. Therefore, the ratio of the photocurrent to the dark current can be improved effectively so that the working temperature for the background limited performance is increased vastly to even higher than 77 K.

    Abstract translation: 公开了一种超晶格红外光电探测器，其可以通过分子束外延容易地制造，具有低功耗和小的暗电流。 此外，通过冷却到液氮温度可以实现背景有限性能下操作检测器的工作温度。 也就是说，超晶格结构的前侧和后侧添加有足够高度和宽度的阻挡层。 厚度约为50nm，能垒势垒的高度必须高于超晶格结构的第二个迷你架的底部，其值大于10meV。 由此，随着光电流的产生，暗电流同时减小。 因此，可以有效地提高光电流与暗电流的比例，使得背景有限性能的工作温度大大提高至甚至高于77K。

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