公开(公告)号：US20160105156A1

公开(公告)日：2016-04-14

申请号：US14970676

申请日：2015-12-16

申请人： Texas Instruments Incorporated

发明人： Byron Neville BURGESS ,  William Robert KRENIK ,  Stuart M. JACOBSEN

IPC分类号： H03H3/02

CPC分类号： H03H3/02 ,  H01L23/3107 ,  H01L23/3171 ,  H01L23/49838 ,  H03H9/02102 ,  H03H9/02149 ,  H03H9/1007 ,  H03H9/1057 ,  H03H9/175 ,  Y10T29/42 ,  Y10T29/49171 ,  Y10T29/49172

摘要： An integrated resonator apparatus includes a piezoelectric resonator and an acoustic Bragg reflector formed adjacent the piezoelectric resonator. The integrated resonator apparatus also includes a mass bias formed over the Bragg reflector on a side of the piezoelectric resonator opposite the piezoelectric resonator.

公开(公告)号：US09048811B2

公开(公告)日：2015-06-02

申请号：US13874752

申请日：2013-05-01

申请人： Sand 9, Inc.

发明人： David M. Chen ,  Jan H. Kuypers ,  Alexei Gaidarzhy ,  Guiti Zolfagharkhani ,  Jason Goodelle

IPC分类号： H01L41/053 ,  H03H9/10 ,  H03H3/007 ,  H03H9/02

CPC分类号： H03H9/1057 ,  H03H3/007 ,  H03H9/02007 ,  H03H9/02244 ,  H03H9/02535

摘要： Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.

摘要翻译： 描述了具有与基板一体化的压电材料结构的装置。 还描述了用于形成这种装置的制造技术。 该制造可以包括将压电材料晶片结合到不同材料的衬底。 然后可以由压电材料晶片形成诸如谐振器的结构。

公开(公告)号：US09046541B1

公开(公告)日：2015-06-02

申请号：US13648041

申请日：2012-10-09

申请人： HRL LABORATORIES LLC ,  The Boeing Company

发明人： Randall L. Kubena ,  David T. Chang ,  Robert L. Larson

IPC分类号： H04R31/00 ,  G01P1/00

CPC分类号： G01P1/00 ,  G01C19/5684 ,  H03H3/0072 ,  H03H9/02244 ,  H03H9/0552 ,  H03H9/1057 ,  H03H9/2436 ,  H03H2009/02283 ,  H03H2009/02496

摘要： A method for producing a disk resonator gyroscope includes providing a base substrate and a handle wafer with a release hole, bonding a release wafer to the handle wafer, bonding a resonator wafer to the release wafer, etching the resonator wafer to form a disk resonator with a central pillar, and sense and drive electrodes, selectively applying a conductive film onto the disk resonator on a side of the disk resonator opposite the release wafer, on the outer edge of the disk resonator, and on the surfaces of the sense and drive electrodes facing the outer edge of the disk resonator, bonding the sense and drive electrodes and the central pillar of the disk resonator to the base substrate, and releasing the handle wafer by introducing a dry release agent into the release hole to undercut the release wafer.

摘要翻译： 一种盘式谐振器陀螺仪的制造方法，其特征在于，具备提供基板和带有释放孔的手柄晶片，将释放晶片接合在手柄晶片上，将振荡片贴合到剥离晶片，蚀刻谐振晶片，形成具有 中央支柱，以及感测和驱动电极，在圆盘谐振器的外边缘上，在盘谐振器的与隔离晶片相反的一侧的盘谐振器上选择性地施加导电膜，并且在感测和驱动电极的表面上 面对盘式谐振器的外边缘，将感测和驱动电极以及盘式谐振器的中心支柱粘合到基底基板上，并通过将释放孔引入释放孔中以释放释放晶片来释放手柄晶片。

公开(公告)号：US20140062262A1

公开(公告)日：2014-03-06

申请号：US13779416

申请日：2013-02-27

申请人： Klaus Juergen Schoepf ,  Reimund Rebel

发明人： Klaus Juergen Schoepf ,  Reimund Rebel

IPC分类号： H03H9/08

CPC分类号： H03H9/08 ,  H01L2224/73265 ,  H03H9/02448 ,  H03H9/1057 ,  H03H9/2405 ,  H03H2009/241

摘要： Methods and apparatus for temperature control of devices and mechanical resonating structures are described. A mechanical resonating structure may include a heating element and a temperature sensor. The temperature sensor may sense the temperature of the mechanical resonating structure, and the heating element may be adjusted to provide a desired level of heating. Optionally, additional heating elements and/or temperature sensors may be included.

摘要翻译： 描述了用于装置和机械谐振结构的温度控制的方法和装置。 机械共振结构可以包括加热元件和温度传感器。 温度传感器可以感测机械谐振结构的温度，并且可以调节加热元件以提供期望的加热水平。 可选地，可以包括附加的加热元件和/或温度传感器。

公开(公告)号：US20130200957A1

公开(公告)日：2013-08-08

申请号：US13701653

申请日：2010-12-13

申请人： Jianhong Mao

发明人： Jianhong Mao

IPC分类号： B81C1/00 ,  B81B3/00

CPC分类号： B81C1/0019 ,  B81B3/0018 ,  B81B3/0021 ,  B81B7/0077 ,  B81C1/0023 ,  H01L41/053 ,  H01L41/27 ,  H03B5/30 ,  H03H3/0072 ,  H03H3/02 ,  H03H9/1014 ,  H03H9/1057 ,  H03H9/17 ,  H03H9/173 ,  Y10T29/42

摘要： A crystal oscillator and manufacturing method thereof are provided. The crystal oscillator includes: a semiconductor substrate; an interlayer dielectric layer located on the surface of the semiconductor substrate, an excitation plate and a positive electrode plug and a negative electrode plug being formed inside the interlayer dielectric layer, and the positive electrode plug and the negative electrode plug being located at the both sides of the excitation plate; a bottom cavity on top of the excitation plate, located between the positive electrode plug and the negative electrode plug; a vibrating crystal located on the surface of the interlayer dielectric layer, across the bottom cavity and connected with the positive electrode plug and the negative plug, wherein the vibrating crystal connects the positive electrode plug and the negative electrode plug at its both sides and besides the other both sides are the free ends and do not contact with the surrounding objects; an isolating layer located on top of the interlayer dielectric layer, a gap between the isolating layer and the vibrating crystal thus forming a top cavity; a covering layer formed on the surface of the isolating layer. The crystal oscillator is manufactured based on Complementary Metal-Oxide-Semiconductor Transistor (CMOS) technology, and can be integrated into the semiconductor chip easily and can meet the requirement for the miniature components.

摘要翻译： 提供了一种晶体振荡器及其制造方法。 晶体振荡器包括：半导体衬底; 位于半导体衬底的表面上的层间电介质层，形成在层间电介质层的内侧的激励板和正极插头和负极插头，正极插头和负极插头位于两侧 的激励板; 位于激励板顶部的位于正电极插头和负电极插头之间的底腔; 位于层间电介质层的表面上的振动晶体穿过底部腔并与正极塞和负极连接，其中振动晶体在其两侧连接正电极插塞和负极插头，此外， 其他两边都是自由端，不要与周围的物体接触; 位于层间电介质层顶部的绝缘层，隔离层和振动晶体之间的间隙，从而形成顶部空腔; 形成在隔离层的表面上的覆盖层。 晶体振荡器基于互补金属氧化物半导体晶体管（CMOS）技术制造，可以轻松集成到半导体芯片中，可满足微型器件的要求。

公开(公告)号：US20130176686A1

公开(公告)日：2013-07-11

申请号：US13812490

申请日：2011-06-15

申请人： Kim Choong Lee ,  Marc Huesgen

发明人： Kim Choong Lee ,  Marc Huesgen

IPC分类号： H05K1/18 ,  H05K3/32

CPC分类号： H05K1/181 ,  B81B7/0058 ,  B81B7/007 ,  B81B2207/096 ,  H01L21/56 ,  H01L21/563 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/49833 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/10135 ,  H01L2224/13014 ,  H01L2224/13082 ,  H01L2224/13147 ,  H01L2224/29011 ,  H01L2224/29014 ,  H01L2224/29082 ,  H01L2224/291 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81139 ,  H01L2224/81191 ,  H01L2224/81801 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01058 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/1461 ,  H03H9/059 ,  H03H9/1057 ,  H03H9/1064 ,  H03H9/1071 ,  H03H9/1078 ,  H03H9/1085 ,  H03H9/1092 ,  H05K3/32 ,  Y10T29/4913 ,  Y10T29/49146 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00014

摘要： The invention specifies a module comprising a carrier substrate (6) having an electrical wiring and a component chip mounted on the carrier substrate (6) using flip-chip technology, wherein the component chip (1) has, on its surface (2) facing the carrier substrate (6), component structures (3), a supporting frame (4) and supporting elements (5), the supporting elements (5) produce an electrical connection between the component structures (3) and the electrical wiring of the carrier substrate (6), and the height of the supporting elements and the height of the supporting frame (4) correspond. Furthermore, the invention specifies a method for producing the module.

摘要翻译： 本发明规定了一种包括具有电线的载体衬底（6）和使用倒装芯片技术安装在载体衬底（6）上的组件芯片的模块，其中组件芯片（1）在其表面（2）面对 载体基板（6），部件结构（3），支撑框架（4）和支撑元件（5），支撑元件（5）在部件结构（3）和载体的电线之间产生电连接 衬底（6），并且支撑元件的高度和支撑框架（4）的高度对应。 此外，本发明规定了该模块的制造方法。

公开(公告)号：US08436690B2

公开(公告)日：2013-05-07

申请号：US12927949

申请日：2010-11-30

申请人： Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

发明人： Andrew D. McCraith ,  Richard S. Miller ,  Emmanuel P. Quevy

IPC分类号： H03B5/30

CPC分类号： H03H9/1057 ,  H03H9/2426

摘要： A hybrid system having a non-MEMS device and a MEMS device is described. The apparatus includes a non-MEMS device and an integrated circuit including a MEMS device, the integrated circuit formed on a substrate. The integrated circuit includes a control circuit for the non-MEMS device and a MEMS control circuit for the MEMS device.

摘要翻译： 描述了具有非MEMS器件和MEMS器件的混合系统。 该装置包括非MEMS器件和包括MEMS器件的集成电路，该集成电路形成在衬底上。 集成电路包括用于非MEMS器件的控制电路和用于MEMS器件的MEMS控制电路。

公开(公告)号：US20120075030A1

公开(公告)日：2012-03-29

申请号：US13322990

申请日：2011-02-24

申请人： Tomohiro Iwasaki ,  Keiji Onishi ,  Kunihiko Nakamura

发明人： Tomohiro Iwasaki ,  Keiji Onishi ,  Kunihiko Nakamura

IPC分类号： H03B5/30 ,  H01L21/306 ,  H02N1/00

CPC分类号： H03H9/1057 ,  B81B3/00 ,  B81B7/0077 ,  B81C1/00333 ,  B81C1/00476 ,  H03H3/0072 ,  H03H9/2405 ,  H03H9/2447

摘要： In a MEMS device having a substrate 1, a sealing membrane 7, and a movable portion 3 of beam and an electrode 5 which have a region wherein they overlap with a gap in perpendicular to a substrate 1 surface, a first cavity 9 is on the side of the movable portion 3 in the direction perpendicular to the surface of the substrate, and a second cavity is the other cavity, and an inner surface a of a side wall A in contact with the electrode 5, of the first cavity 9, is positioned more inside than an inner surface b of a side wall B in contact with the electrode 5, of the second cavity 10, in the direction parallel to the substrate surface, such that the movable portion 3 does not collide with the electrode 5 when mechanical stress is applied from outside to the sealing membrane 7.

摘要翻译： 在具有基板1，密封膜7和梁的可动部分3以及具有与垂直于基板1表面的间隙重叠的区域的电极5的MEMS装置中，第一空腔9位于 可动部3的与该基板的表面垂直的方向的一侧，第二空腔为另一个空腔，与第一空腔9的电极5接触的侧壁A的内表面a为 定位在比与第二腔10的电极5接触的侧壁B的内表面b更靠内侧表面b的平行于基底表面的方向上，使得当机械的时候可动部分3不与电极5碰撞 从外部向密封膜7施加应力。

公开(公告)号：US20110279201A1

公开(公告)日：2011-11-17

申请号：US12779104

申请日：2010-05-13

申请人： Tuomas PENSALA ,  Antti JAAKKOLA

发明人： Tuomas PENSALA ,  Antti JAAKKOLA

IPC分类号： H01P7/10 ,  H01L21/84

CPC分类号： H03H3/0076 ,  H03H9/1057 ,  H03H9/2436 ,  H03H2009/02503 ,  H03H2009/2442

摘要： The invention relates to temperature compensated micro-electro-mechanical (MEMS) resonators (300) preferably made of silicon. Prior art MEMS resonators have a significant temperature coefficient of resonance frequency, whereby it is difficult to achieve a sufficiently good frequency stability. The inventive MEMS resonator has a resonance plate (310) which resonates in Lamé mode. The resonance plate is p+ doped material, such as silicon doped with boron, and the concentration of the p+ doping is such that the plate has a temperature coefficient of resonance frequency near to zero. The tensile stress and the second order temperature coefficient can further be reduced by doping the plate with germanium.

摘要翻译： 本发明涉及优选由硅制成的温度补偿微机电（MEMS）谐振器（300）。 现有技术的MEMS谐振器具有显着的谐振频率温度系数，难以实现足够好的频率稳定性。 本发明的MEMS谐振器具有以Lamé模式谐振的谐振板（310）。 共振板是p +掺杂材料，例如掺杂硼的硅，并且p +掺杂的浓度使得板具有接近于零的共振频率的温度系数。 通过用锗掺杂板可以进一步降低拉伸应力和二次温度系数。

公开(公告)号：US20110121414A1

公开(公告)日：2011-05-26

申请号：US13055987

申请日：2009-06-25

申请人： Peter Rothacher

发明人： Peter Rothacher

IPC分类号： H01L29/84 ,  H01L21/02

CPC分类号： B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  G01P1/023 ,  H01L23/3135 ,  H01L23/315 ,  H01L2924/0002 ,  H03H9/1057 ,  H01L2924/00

摘要： The invention relates to an encapsulation (4) of a sensitive component structure (3) on a semiconductor substrate (2) with a film (5) covering the component structure (3). According to the invention, it is provided that a cavity (8) for the component structure (3) is provided in the film (5). The invention also relates to a MEMS (1) and to a method for encapsulating a sensitive component structure (3).

摘要翻译： 本发明涉及一种在半导体衬底（2）上具有覆盖部件结构（3）的膜（5）的敏感部件结构（3）的封装（4）。 根据本发明，提供一种用于组件结构（3）的空腔（8）设置在薄膜（5）中。 本发明还涉及MEMS（1）和用于封装敏感组件结构（3）的方法。