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    ELECTROLYTE, METHOD OF FORMING A COPPER LAYER AND METHOD OF FORMING A CHIP
    92.
    发明申请
    ELECTROLYTE, METHOD OF FORMING A COPPER LAYER AND METHOD OF FORMING A CHIP 审中-公开
    电解质，形成铜层的方法和形成芯片的方法

    公开(公告)号：US20160168739A1

    公开(公告)日：2016-06-16

    申请号：US14948463

    申请日：2015-11-23

    Applicant: Infineon Technologies AG

    Inventor： Werner ROBL ,  Michael MELZL ,  Manfred SCHNEEGANS ,  Bernhard WEIDGANS ,  Franziska HAERING

    IPC: C25D3/40 ,  H01L21/768 ,  C25D5/02 ,  C25D5/50 ,  C25D3/38 ,  C25D3/48 ,  C25D3/46 ,  C25D3/50 ,  C25D3/30 ,  C25D3/12 ,  H01L23/498 ,  C25D7/12

    CPC classification number: C25D3/38 ,  C25D3/12 ,  C25D3/32 ,  C25D3/46 ,  C25D3/48 ,  C25D3/52 ,  C25D5/50 ,  C25D7/123 ,  C25D15/00 ,  H01L21/2885 ,  H01L23/53228 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An electrolyte may be provided. The electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C., and a water soluble metal salt, and the electrolyte may be free from carbon nanotubes. In various embodiments, a method of forming a metal layer may be provided: The method may include depositing a metal layer on a carrier using an electrolyte, wherein the electrolyte may include at least one additive configured to decompose or evaporate at a temperature above approximately 100° C. and a water soluble metal salt, wherein the electrolyte is free from carbon nanotubes; and annealing the metal layer to form a metal layer comprising a plurality of pores. In various embodiments, a semiconductor device may be provided. The semiconductor device may include a metal layer including a plurality of pores, wherein the plurality of pores may be formed in the metal layer as remnants of an additive having resided in the plurality of pores and having at least partially decomposed or evaporated. To keep a high elasticity over a wide temperature range (up to 450° C.), an adhesion layer may stabilize the metal grain boundaries and may fix dislocation gliding inside metal grains. In various embodiments, a metal layer is provided. The metal layer may include a plurality of pores having ellipsoidal or spheroidal shape.

    Abstract translation: 可以提供电解质。 电解质可以包括至少一种配置成在高于约100℃的温度下分解或蒸发的添加剂和水溶性金属盐，并且电解质可以不含碳纳米管。 在各种实施方案中，可以提供形成金属层的方法：该方法可以包括使用电解质在载体上沉积金属层，其中电解质可以包括至少一种添加剂，其构造成在高于约100℃的温度下分解或蒸发 ℃和水溶性金属盐，其中电解质不含碳纳米管; 并退火金属层以形成包含多个孔的金属层。 在各种实施例中，可以提供半导体器件。 半导体器件可以包括包括多个孔的金属层，其中多个孔可以形成在金属层中，作为存在于多个孔中并具有至少部分分解或蒸发的添加剂的残留物。 为了在较宽的温度范围（高达450℃）保持高弹性，粘合层可以稳定金属晶界，并且可以固定在金属颗粒内滑动的位错。 在各种实施例中，提供金属层。 金属层可以包括具有椭圆形或球形形状的多个孔。

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