PREPARATIONS OF NOBLE METAL COMPLEXES
    92.
    发明公开

    公开(公告)号:US20230243038A1

    公开(公告)日:2023-08-03

    申请号:US18004581

    申请日:2021-04-26

    IPC分类号: C23C18/08

    CPC分类号: C23C18/08

    摘要: A preparation containing:



    (A) 30 to 90 wt. % of at least one organic solvent,
    (B) 10 to 70 wt. % of at least one noble metal complex comprising diolefin and C6-C18 monocarboxylate ligands selected from the group consisting of noble metal complexes of the type [LPd[O(CO)R1]X]n, [LRh[O(CO)R1]]m, and [LIr[O(CO)R1]]m, wherein L represents a compound acting as diolefin ligand, wherein X is selected among bromide, chloride, iodide, and —O(CO)R2, wherein —O(CO)R1 and —O(CO)R2 represent identical or different non-aromatic C6-C18 monocarboxylic acid residues, and wherein n is an integral number 1, and m is an integral number 2, and
    (C) 0 to 10 wt. % of at least one additive.

    Apparatus, system, and method of providing a ramped interconnect for semiconductor fabrication

    公开(公告)号:US11081375B2

    公开(公告)日:2021-08-03

    申请号:US17003595

    申请日:2020-08-26

    申请人: JABIL INC.

    IPC分类号: H01L21/67 C23C18/08 H01L21/48

    摘要: The disclosure is and includes at least an apparatus, system and method for a ramped electrical interconnection for use in semiconductor fabrications. The apparatus, system and method includes at least a first semiconductor substrate having thereon a first electrical circuit comprising first electrical components; a second semiconductor substrate at least partially covering the first electrical circuit, and having thereon a second electrical circuit comprising second electrical components; a ramp formed through the second semiconductor substrate between at least one of the first electrical components and at least one of the second electrical components; and an additively manufactured conductive trace formed on the ramp to electrically connect the at least one first electrical component and the at least one second electrical component.