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公开(公告)号：US20170352542A1
公开(公告)日：2017-12-07
申请号：US15522992
申请日：2015-10-29
发明人： Charles M. Lieber , Ruixuan Gao , Max Nathan Mankin , Robert Day , Hong-Gyu Park , You-Shin No
IPC分类号： H01L21/02 , C23C16/455 , C23C16/56 , C30B25/20 , C30B29/06 , C30B29/66 , C30B33/10 , C23C16/40 , B82Y40/00 , H01L33/44 , H01L29/06 , H01L29/16 , H01L29/36 , H01L31/0216 , H01L31/028 , H01L31/0352 , H01L31/18 , H01L33/00 , H01L33/02 , H01L33/06 , H01L33/34
CPC分类号： H01L21/02653 , B82Y10/00 , B82Y40/00 , C23C16/402 , C23C16/45525 , C23C16/56 , C30B25/20 , C30B29/06 , C30B29/66 , C30B33/10 , H01L21/02164 , H01L21/0228 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02584 , H01L21/02603 , H01L29/0649 , H01L29/068 , H01L29/16 , H01L29/365 , H01L29/66136 , H01L29/861 , H01L31/02161 , H01L31/028 , H01L31/035227 , H01L31/035272 , H01L31/103 , H01L31/1804 , H01L33/0054 , H01L33/025 , H01L33/06 , H01L33/18 , H01L33/34 , H01L33/44 , Y02E10/547 , Y02P70/521
摘要： The present invention generally relates to nanoscale wires and, in particular, to nanoscale wires with heterojunctions, such as tip-localized homo- or heterojunctions. In one aspect, the nanoscale wire may include a core, an inner shell surrounding the core, and an outer shell surrounding the inner shell. The outer shell may also contact the core, e.g., at an end portion of the nanoscale wire. In some cases, such nanoscale wires may be used as electrical devices. For example a p-n junction may be created where the inner shell is electrically insulating, and the core and the outer shell are p-doped and n-doped. Other aspects of the present invention generally relate to methods of making or using such nanoscale wires, devices, or kits including such nanoscale wires, or the like.
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公开(公告)号：US20170073841A1
公开(公告)日：2017-03-16
申请号：US15308951
申请日：2015-05-06
IPC分类号： C30B29/66 , C23C14/22 , H01L21/02 , H01L29/423 , H01L29/786 , C30B23/02 , H01L29/16 , H01L29/22 , H01L29/20 , C30B29/06 , C30B29/08 , C30B25/18 , C23C16/44 , H01L29/06
CPC分类号： C30B29/66 , B82Y30/00 , B82Y40/00 , C23C14/22 , C23C16/44 , C23C18/08 , C23C18/12 , C30B23/025 , C30B25/18 , C30B29/06 , C30B29/08 , C30B29/38 , C30B29/60 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02557 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/02603 , H01L21/02631 , H01L29/0673 , H01L29/16 , H01L29/20 , H01L29/22 , H01L29/42392 , H01L29/78696
摘要： The present invention generally relates to nanoscale wires, and to methods of producing nanoscale wires. In some aspects, the nanoscale wires are nanowires comprising a core which is continuous and a shell which may be continuous or discontinuous, and/or may have regions having different cross-sectional areas. In some embodiments, the shell regions are produced by passing the shell material (or a precursor thereof) over a core nanoscale wire under conditions in which Plateau-Raleigh crystal growth occurs, which can lead to non-homogenous deposition of the shell material on different regions of the core. The core and the shell each independently may comprise semiconductors, and/or non-semiconductor materials such as semiconductor oxides, metals, polymers, or the like. Other embodiments are generally directed to systems and methods of making or using such nanoscale wires, devices containing such nanoscale wires, or the like.
摘要翻译： 本发明一般涉及纳米线，以及生产纳米线的方法。 在一些方面，纳米线是纳米线，其包括连续的芯和可以是连续的或不连续的壳，和/或可以具有不同横截面积的区域。 在一些实施方案中，壳区域是通过在高原 - 罗利晶体生长发生的条件下将壳材料（或其前体）通过芯纳米级线材制成的，这可能导致壳材料在不同的 核心区域。 芯和壳各自独立地可以包括半导体，和/或非半导体材料，例如半导体氧化物，金属，聚合物等。 其他实施方案通常涉及制造或使用这种纳米尺寸线，包含这种纳米线的装置等的系统和方法。
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公开(公告)号：US10435817B2
公开(公告)日：2019-10-08
申请号：US15308951
申请日：2015-05-06
IPC分类号： C30B29/66 , B82Y30/00 , H01L29/06 , C23C14/22 , C23C16/44 , C30B23/02 , C30B25/18 , C30B29/06 , C30B29/08 , H01L21/02 , H01L29/16 , H01L29/20 , H01L29/22 , H01L29/423 , H01L29/786 , C30B29/38 , C30B29/60 , B82Y40/00 , C23C18/08 , C23C18/12
摘要： The present invention generally relates to nanoscale wires, and to methods of producing nanoscale wires. In some aspects, the nanoscale wires are nanowires comprising a core which is continuous and a shell which may be continuous or discontinuous, and/or may have regions having different cross-sectional areas. In some embodiments, the shell regions are produced by passing the shell material (or a precursor thereof) over a core nanoscale wire under conditions in which Plateau-Raleigh crystal growth occurs, which can lead to non-homogenous deposition of the shell material on different regions of the core. The core and the shell each independently may comprise semiconductors, and/or non-semiconductor materials such as semiconductor oxides, metals, polymers, or the like. Other embodiments are generally directed to systems and methods of making or using such nanoscale wires, devices containing such nanoscale wires, or the like.
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公开(公告)号：US20170117147A1
公开(公告)日：2017-04-27
申请号：US15317997
申请日：2015-06-11
发明人： Charles M. Lieber , Max Nathan Mankin , Robert Day , Ruixuan Gao
IPC分类号： H01L21/02 , H01L29/06 , H01L29/04 , H01L21/311
CPC分类号： H01L21/02433 , B82Y30/00 , B82Y40/00 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02238 , H01L21/02381 , H01L21/02428 , H01L21/02532 , H01L21/02543 , H01L21/02557 , H01L21/02603 , H01L21/02639 , H01L21/02658 , H01L21/31116 , H01L29/045 , H01L29/0669 , H01L29/0673 , H01L29/16 , H01L29/22 , H01L29/66439 , H01L29/66469 , H01L29/68 , H01L29/775 , Y10S977/762 , Y10S977/891 , Y10S977/932
摘要： The present invention generally relates to nanoscale wires, and to systems and methods of producing nanoscale wires. In some aspects, the present invention is generally related to facet-specific deposition on semiconductor surfaces. In one embodiment, a first surface of a nanoscale wire, or a semiconductor, is preferentially oxidized relative to a second surface, and material is preferentially deposited on the second surface relative to the first surface. For example, the nanoscale wire or semiconductor may be a silicon nanowire that is initially exposed to an etchant to remove silicon oxide, then exposed to an oxidant under conditions such that one facet or surface (e.g., a {113} facet) is oxidized more quickly than another facet or surface (e.g., a {111} facet). Material may then be deposited or immobilized on the less-oxidized facet relative to the more-oxidized facet. Other embodiments of the invention may be directed to articles made thereby, devices containing such nanoscale wires or semiconductors, kits involving such nanoscale wires or semiconductors, semiconductor surfaces, or the like.
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