公开(公告)号：US20200274029A1

公开(公告)日：2020-08-27

申请号：US16461256

申请日：2019-04-10

申请人： GLO AB

发明人： Richard P. Schneider, JR. ,  Benjamin Leung ,  Fariba Danesh ,  Zulal Tezcan Ozel ,  Miao-Chan Tsai

IPC分类号： H01L33/24 ,  H01L27/15 ,  H01L33/36 ,  H01L33/46 ,  H01L33/62 ,  H01L25/075 ,  H01L33/00 ,  H01L33/12 ,  H01L33/32

摘要： A light emitting device, such as an LED, is formed by forming a plurality of semiconductor nanostructures having a doping of a first conductivity type through, and over, a growth mask layer overlying a doped compound semiconductor layer. Each of the plurality of semiconductor nanostructures includes a nanofrustum including a bottom surface, a top surface, tapered planar sidewalls, and a height that is less than a maximum lateral dimension of the top surface, and a pillar portion contacting the bottom surface of the nanofrustum and located within a respective one of the openings through the growth mask layer. A plurality of active regions on the nanofrustums. A second conductivity type semiconductor material layer is formed on each of the plurality of active regions.

公开(公告)号：US20200274025A1

公开(公告)日：2020-08-27

申请号：US16063336

申请日：2017-12-07

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.

发明人： Huijuan WANG ,  Meili WANG ,  Zhenhua LV ,  Fei WANG ,  Zezhou YANG

IPC分类号： H01L33/06 ,  H01L25/075 ,  H01L33/32 ,  H01L25/16 ,  H01L33/58 ,  H01L33/12 ,  H01L33/50 ,  G02F1/1335 ,  G02F1/13357 ,  G09G3/34

摘要： The present disclosure relates to the field of LED display technologies, and provides an LED chip, an LED light emitting substrate, a display device and a control method thereof. Specifically, the LED chip comprises: an N-type semiconductor layer, a P-type semiconductor layer, as well as a quantum well layer between the N-type semiconductor layer and the P-type semiconductor layer. The quantum well layer is made of indium gallium nitride, wherein indium atoms have a molar ratio of greater than or equal to 0.3 in the indium gallium nitride.

公开(公告)号：US20200243651A9

公开(公告)日：2020-07-30

申请号：US16231225

申请日：2018-12-21

申请人： MACOM Technology Solutions Holdings, Inc.

发明人： T. Warren Weeks, JR. ,  Edwin Lanier Piner ,  Thomas Gehrke ,  Kevin J. Linthicum

IPC分类号： H01L29/15 ,  H01L29/205 ,  H01L21/02 ,  H01L33/04 ,  C30B23/02 ,  C30B25/18 ,  C30B29/06 ,  C30B29/68 ,  H01L33/06 ,  H01L29/778 ,  H01L29/78 ,  H01L29/04 ,  H01L29/06 ,  H01L29/201 ,  H01L29/66 ,  H01L33/12 ,  H01L33/00 ,  H01L29/20 ,  H01L29/225 ,  H01L33/32 ,  C30B29/40 ,  C30B25/02

摘要： The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications.

公开(公告)号：US20200234946A1

公开(公告)日：2020-07-23

申请号：US16652572

申请日：2018-10-05

申请人： HEXAGEM AB

发明人： Jonas Ohlsson ,  Lars Samuelson ,  Kristian Storm ,  Rafal Ciechonski ,  Bart Markus

IPC分类号： H01L21/02 ,  H01L33/00 ,  H01L33/16 ,  H01L33/12

摘要： A semiconductor device having a planar III-N semiconductor layer, comprising a substrate comprising a wafer (101) and a buffer layer (102), of a buffer material different from a material of the wafer, the buffer layer having a growth surface (1021); an array of nano structures (1010) epitaxially grown from the growth surface; a continuous planar layer (1020) formed by coalescence of upper parts of the nano structures at an elevated temperature T, wherein the number of lattice cells spanning a center distance between adjacent nano structures are different at the growth surface and at the coalesced planar layer; a growth layer (1030), epitaxially grown on the planar layer (1020).

公开(公告)号：US10680136B2

公开(公告)日：2020-06-09

申请号：US16416488

申请日：2019-05-20

申请人： EPISTAR CORPORATION

发明人： Chao-Hsing Chen ,  Jia-Kuen Wang ,  Wen-Hung Chuang ,  Tzu-Yao Tseng ,  Cheng-Lin Lu

IPC分类号： H01L33/00 ,  H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62 ,  H01L33/32 ,  F21K9/23 ,  H01L33/06 ,  H01L33/12 ,  F21K9/232 ,  F21Y115/10 ,  F21K9/69

摘要： A light-emitting device comprises a semiconductor structure comprising a surface and a side wall inclined to the surface, wherein the semiconductor structure comprises a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, and the second semiconductor layer comprises a first edge and a first area; a reflective layer located on the second semiconductor layer and comprising an outer edge and a second area, wherein a distance between the first edge and the outer edge is greater than 0 μm and is not greater than 10 μm; and a first contact part comprising a metal formed on the reflective layer and the first semiconductor layer, wherein the first contact part comprises a first periphery comprising a first periphery length larger than a periphery length of the active layer from a top-view of the light-emitting device.

公开(公告)号：US10573782B2

公开(公告)日：2020-02-25

申请号：US16218810

申请日：2018-12-13

申请人： Asahi Kasei Microdevices Corporation

发明人： Osamu Morohara ,  Hiromi Fujita ,  Hirotaka Geka

IPC分类号： H01L33/30 ,  H01L33/02 ,  H01L33/24 ,  H01L33/12 ,  H01L33/06

摘要： Disclosed is an infrared light emitting device including: a semiconductor substrate; a first layer formed on the semiconductor substrate and having a first conductivity type; a light emitting layer formed on the first layer; and a second layer formed on the light emitting layer and having a second conductivity type, wherein the first layer includes, in the stated order: a layer containing Alx(1)In1−x(1)Sb; a layer having a film thickness ty(1) in nanometers and containing Aly(1)In1−y(1)Sb; and a layer containing Alx(2)In1−x(2)Sb, where ty(1), x(1), x(2), and y(1) satisfy the following relations: for j=1, 2, 0

公开(公告)号：US20200058491A1

公开(公告)日：2020-02-20

申请号：US16558638

申请日：2019-09-03

申请人： CRYSTAL IS, INC.

发明人： James R. Grandusky ,  Leo J. Schowalter ,  Shawn R. Gibb ,  Joseph A. Smart ,  Shiwen Liu

IPC分类号： H01L21/02 ,  H01L33/12

摘要： In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.

公开(公告)号：US20200052137A1

公开(公告)日：2020-02-13

申请号：US16535874

申请日：2019-08-08

申请人： ARRAY PHOTONICS, INC.

发明人： AYMERIC MAROS ,  FERRAN SUAREZ ,  JACOB THORP ,  MICHAEL SHELDON ,  TING LIU

IPC分类号： H01L31/0304 ,  H01S5/183 ,  H01S5/30 ,  H01L31/02 ,  H01L31/0232 ,  H01L31/0725 ,  H01L31/18 ,  H01L33/06 ,  H01L33/00 ,  H01L33/10 ,  H01L33/12 ,  H01L33/32 ,  H01L33/46 ,  H01L33/60

摘要： Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.

公开(公告)号：US10546973B2

公开(公告)日：2020-01-28

申请号：US16265895

申请日：2019-02-01

申请人： Applied Materials, Inc.

发明人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC分类号： H01L33/12 ,  H01J37/34 ,  H01L31/18 ,  H01L33/00 ,  H01J37/32 ,  H01L29/20

摘要： Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

公开(公告)号：US10529891B2

公开(公告)日：2020-01-07

申请号：US15948577

申请日：2018-04-09

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Jeehwan Kim ,  Ning Li ,  Devendra K. Sadana

IPC分类号： H01L33/10 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/105 ,  H01L31/18 ,  H01L33/12 ,  H01L33/00 ,  H01L33/30

摘要： An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer.