公开(公告)号：US07524735B1

公开(公告)日：2009-04-28

申请号：US11447594

申请日：2006-06-05

Applicant: Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

Inventor： Vishal Gauri ,  Raashina Humayun ,  Chi-I Lang ,  Judy H. Huang ,  Michael Barnes ,  Sunil Shanker

IPC: H01L21/762

CPC classification number: H01L21/31 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0234 ,  H01L21/3121 ,  H01L21/3122 ,  H01L21/31608 ,  H01L21/76224

Abstract: Methods of this invention relate to filling gaps on substrates with a solid dielectric material by forming a flowable film in the gap. The flowable film provides consistent, void-free gap fill. The film is then converted to a solid dielectric material. In this manner gaps on the substrate are filled with a solid dielectric material. According to various embodiments, the methods involve reacting a dielectric precursor with an oxidant to form the dielectric material. In certain embodiments, the dielectric precursor condenses and subsequently reacts with the oxidant to form dielectric material. In certain embodiments, vapor phase reactants react to form a condensed flowable film.

Abstract translation: 本发明的方法涉及通过在间隙中形成可流动的膜来填充具有固体电介质材料的衬底上的间隙。 可流动膜提供一致的，无空隙的间隙填充。 然后将膜转化成固体电介质材料。 以这种方式，用固体电介质材料填充衬底上的间隙。 根据各种实施方案，所述方法包括使电介质前体与氧化剂反应以形成电介质材料。 在某些实施方案中，电介质前体冷凝并随后与氧化剂反应以形成电介质材料。 在某些实施方案中，气相反应物反应形成冷凝的可流动的膜。

公开(公告)号：US20090053902A1

公开(公告)日：2009-02-26

申请号：US12255644

申请日：2008-10-21

Applicant: Kang Sub Yim ,  Melissa M. Tam ,  Dian Sugiarto ,  Chi-I Lang ,  Peter Wai-Man Lee ,  Li-Qun Xia

Inventor： Kang Sub Yim ,  Melissa M. Tam ,  Dian Sugiarto ,  Chi-I Lang ,  Peter Wai-Man Lee ,  Li-Qun Xia

IPC: H01L21/31

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/325 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832

Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.

Abstract translation: 提供了用于沉积具有显着降低的电流泄漏的碳化硅层的方法。 碳化硅层可以是还包括阻挡层的阻挡层或阻挡层双层的一部分。 还提供了沉积氧掺杂的碳化硅阻挡层的方法。 可以通过使包含有机硅化合物，包含碳 - 碳双键或碳 - 碳三键的脂族烃和任选地在等离子体中的氦气的气体混合物反应来沉积碳化硅层。 或者，可以通过在等离子体中使包含氢或氩的气体混合物和有机硅化合物反应来沉积碳化硅层。

公开(公告)号：US07476621B1

公开(公告)日：2009-01-13

申请号：US11366220

申请日：2006-03-01

Applicant: Minh Anh Nguyen ,  Chi-I Lang ,  Wenxian Zhu ,  Judy H. Huang

Inventor： Minh Anh Nguyen ,  Chi-I Lang ,  Wenxian Zhu ,  Judy H. Huang

IPC: H01L21/311

CPC classification number: H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31608 ,  H01L21/31612

Abstract: Plasma etch processes incorporating H2/Noble gas etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen and one or more Noble gases as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.

Abstract translation: 掺杂H2 / Noble气蚀刻化学物质的等离子体蚀刻工艺。 特别地，高密度等离子体化学气相蚀刻增强（沉积 - 蚀刻 - 沉积）间隙填充工艺结合蚀刻化学，其结合氢气和一种或多种贵重气体作为蚀刻剂，其可以有效地填补高纵横比间隙，同时减少或消除介电污染 通过蚀刻剂化学物种。

公开(公告)号：US07153787B2

公开(公告)日：2006-12-26

申请号：US11044246

申请日：2005-01-27

Applicant: Seon-Mee Cho ,  Peter Wai-Man Lee ,  Chi-I Lang ,  Dian Sugiarto ,  Chen-An Chen ,  Li-Qun Xia ,  Shankar Venkataraman ,  Ellie Yieh

Inventor： Seon-Mee Cho ,  Peter Wai-Man Lee ,  Chi-I Lang ,  Dian Sugiarto ,  Chen-An Chen ,  Li-Qun Xia ,  Shankar Venkataraman ,  Ellie Yieh

IPC: H01L21/469

CPC classification number: H01L21/02126 ,  C23C16/30 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  Y10S438/931 ,  Y10T428/31909

Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.

Abstract translation: 提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。 通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。 沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

公开(公告)号：US20050153572A1

公开(公告)日：2005-07-14

申请号：US11044246

申请日：2005-01-27

Applicant: Seon-Mee Cho ,  Peter Lee ,  Chi-I Lang ,  Dian Sugiarto ,  Chen-An Chen ,  Li-Qun Xia ,  Shankar Venkataraman ,  Ellie Yieh

Inventor： Seon-Mee Cho ,  Peter Lee ,  Chi-I Lang ,  Dian Sugiarto ,  Chen-An Chen ,  Li-Qun Xia ,  Shankar Venkataraman ,  Ellie Yieh

IPC: C23C16/30 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/02126 ,  C23C16/30 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  Y10S438/931 ,  Y10T428/31909

Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.

Abstract translation: 提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。 通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。 沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

公开(公告)号：US20050130440A1

公开(公告)日：2005-06-16

申请号：US11021319

申请日：2004-12-22

Applicant: Kang Yim ,  Melissa Tam ,  Dian Sugiarto ,  Chi-I Lang ,  Peter Lee ,  Li-Qun Xia

Inventor： Kang Yim ,  Melissa Tam ,  Dian Sugiarto ,  Chi-I Lang ,  Peter Lee ,  Li-Qun Xia

IPC: C23C16/30 ,  C23C16/40 ,  C23C16/56 ,  H01L21/311 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/336 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76834 ,  C23C16/30 ,  C23C16/325 ,  C23C16/401 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76832

Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.

Abstract translation: 提供了用于沉积具有显着降低的电流泄漏的碳化硅层的方法。 碳化硅层可以是还包括阻挡层的阻挡层或阻挡层双层的一部分。 还提供了沉积氧掺杂的碳化硅阻挡层的方法。 可以通过使包含有机硅化合物，包含碳 - 碳双键或碳 - 碳三键的脂族烃和任选地在等离子体中的氦气的气体混合物反应来沉积碳化硅层。 或者，可以通过在等离子体中使包含氢或氩的气体混合物和有机硅化合物反应来沉积碳化硅层。

公开(公告)号：US06486082B1

公开(公告)日：2002-11-26

申请号：US09885985

申请日：2001-06-18

Applicant: Seon-Mee Cho ,  Peter Wai-Man Lee ,  Chi-I Lang ,  Dian Sugiarto ,  Chen-An Chen ,  Li-Qun Xia ,  Shankar Venkataraman ,  Ellie Yieh

Inventor： Seon-Mee Cho ,  Peter Wai-Man Lee ,  Chi-I Lang ,  Dian Sugiarto ,  Chen-An Chen ,  Li-Qun Xia ,  Shankar Venkataraman ,  Ellie Yieh

IPC: H07L21477

CPC classification number: H01L21/02126 ,  C23C16/30 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  Y10S438/931 ,  Y10T428/31909

Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.

Abstract translation: 提供了具有约3.0或更小，优选约2.5或更小的硅 - 碳键和介电常数的低介电常数膜。 通过使环状有机硅化合物和脂族有机硅化合物与氧化气体反应同时施加RF功率来沉积低介电常数膜。 沉积膜的碳含量除氢原子以外约为10至约30原子百分比，优选除氢原子之外约10至约20原子％。

公开(公告)号：US6086952A

公开(公告)日：2000-07-11

申请号：US97365

申请日：1998-06-15

Applicant: Chi-I Lang ,  Yeming Jim Ma ,  Fong Chang ,  Peter Wai-Man Lee ,  Shin-Puu Jeng ,  David Cheung

Inventor： Chi-I Lang ,  Yeming Jim Ma ,  Fong Chang ,  Peter Wai-Man Lee ,  Shin-Puu Jeng ,  David Cheung

IPC: C08F212/12 ,  B05D7/24 ,  C08F230/08 ,  C08G61/12 ,  H01L21/312 ,  H01L21/316 ,  C23C16/00

CPC classification number: B05D1/60

Abstract: A method for forming thin polymer layers having low dielectric constants or semiconductor substrates. In one embodiment, the method includes the vaporization of stable di-p-xylylene, the pyrolytic conversion of such gaseous dimer material into reactive monomers, and blending of the resulting gaseous p-xylylene monomers with one or more comonomers having silicon-oxygen bonds and at least two pendent carbon--carbon double bonds. The copolymer films have low dielectric constants, improved thermal stability, and excellent adhesion to silicon oxide layers in comparison to parylene-N homopolymers.

Abstract translation: 一种形成具有低介电常数或半导体衬底的薄聚合物层的方法。 在一个实施方案中，该方法包括稳定的二对二甲苯的蒸发，将这种气态二聚体材料热解转化为反应性单体，以及将所得气态对二甲苯单体与一个或多个具有硅 - 氧键的共聚单体共混， 至少两个悬挂的碳 - 碳双键。 与聚对二甲苯-N均聚物相比，共聚物膜具有低介电常数，改善的热稳定性和与氧化硅层的优异粘附性。