公开(公告)号：US20170098759A1

公开(公告)日：2017-04-06

申请号：US15220719

申请日：2016-07-27

Applicant: Jung-Ik OH ,  Jong-Kyu KIM ,  Jongchul PARK ,  Gwang-Hyun BAEK ,  Kyungrae BYUN ,  Hyun-Woo YANG

Inventor： Jung-Ik OH ,  Jong-Kyu KIM ,  Jongchul PARK ,  Gwang-Hyun BAEK ,  Kyungrae BYUN ,  Hyun-Woo YANG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.

公开(公告)号：US20170092465A1

公开(公告)日：2017-03-30

申请号：US15198416

申请日：2016-06-30

Applicant: HAN-NA CHO ,  Jong-Kyu KIM ,  Hyuk KIM ,  Jongchul PARK

Inventor： HAN-NA CHO ,  Jong-Kyu KIM ,  Hyuk KIM ,  Jongchul PARK

IPC: H01J37/32

CPC classification number: H01J37/32009 ,  H01J37/32357 ,  H01J37/32403 ,  H01J37/32422 ,  H01J37/3266 ,  H01J37/32669 ,  H01J37/32715

Abstract: An ion beam etching device comprises: an ion source configured to generate ions; a grid on a side of the ion source, the grid configured to accelerate the generated ions to generate an ion beam; a process chamber configured to have an etching process using the ion beam performed therein; and a variable magnetic field application part adjacent to the process chamber, the variable magnetic field application part configured to apply a variable magnetic field.

公开(公告)号：US20170069526A1

公开(公告)日：2017-03-09

申请号：US15170151

申请日：2016-06-01

Applicant: Jongsoon PARK ,  Jong-Kyu KIM ,  Jung-Ik OH ,  Sang-Kuk KIM ,  Jongchul PARK

Inventor： Jongsoon PARK ,  Jong-Kyu KIM ,  Jung-Ik OH ,  Sang-Kuk KIM ,  Jongchul PARK

IPC: H01L21/687 ,  H01J37/305 ,  H01L21/263

CPC classification number: H01L21/68764 ,  H01J37/20 ,  H01J37/3056 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/31 ,  H01L21/2633 ,  H01L21/68792

Abstract: A chuck assembly includes a chuck to hold a substrate, and a pillar coupled to the chuck to support the chuck, an axis of the pillar passing through a center of the pillar in a longitudinal direction of the pillar, wherein the chuck has a top surface, which is inclined with respect to the axis of the pillar, the top surface of the chuck being precessionally rotatable about the axis of the pillar.

Abstract translation: 卡盘组件包括夹持基板的卡盘，以及联接到卡盘以支撑卡盘的支柱，支柱的轴线沿着柱的纵向方向穿过柱的中心，其中卡盘具有顶表面 ，其相对于柱的轴线倾斜，卡盘的顶表面可以围绕柱的轴线进行旋转。

公开(公告)号：USD725185S1

公开(公告)日：2015-03-24

申请号：US29461725

申请日：2013-07-26

Applicant: Jong-Kyu Kim ,  Sang-In Lee ,  Seung-Wook Jeong ,  Naoto Fukasawa

Designer： Jong-Kyu Kim ,  Sang-In Lee ,  Seung-Wook Jeong ,  Naoto Fukasawa

公开(公告)号：US08987610B2

公开(公告)日：2015-03-24

申请号：US13466422

申请日：2012-05-08

Applicant: Ui-Jung Kim ,  Kwang-Uk Chu ,  Jong-Kyu Kim ,  Dae-Heon Lee

Inventor： Ui-Jung Kim ,  Kwang-Uk Chu ,  Jong-Kyu Kim ,  Dae-Heon Lee

IPC: H05K9/00

CPC classification number: H05K9/0041

Abstract: A vent structure for electromagnetic shielding includes: a conductive shielding case having a vent formed therein: a conductive shielding duct installed on the shielding case so as to cover the vent, including a space formed perpendicular to the direction of motion of air discharged from the vent to vent the air and a discharge port connected from the space to the outside to discharge the air introduced into the space to the outside, and shielding electromagnetic waves; and an EMI (Electro Magnetic Interference) gasket installed at a bonding surface between the shielding case and the shielding duct, and electrically connecting the shielding case and the shielding duct.

Abstract translation: 用于电磁屏蔽的通风结构包括：导电屏蔽壳，其中形成有通风口;导电屏蔽导管，安装在屏蔽壳上，以便覆盖通风口，包括垂直于从通风口排出的空气的运动方向形成的空间 排出空气和从该空间连接到外部的排出口，将引入空间的空气排出到外部，并屏蔽电磁波; 以及安装在屏蔽壳体和屏蔽导管之间的接合表面处的EMI（电磁干扰）垫片，并且电连接屏蔽壳体和屏蔽导管。

公开(公告)号：US08927384B2

公开(公告)日：2015-01-06

申请号：US13400993

申请日：2012-02-21

Applicant: Jong-Kyu Kim ,  Sangsup Jeong ,  Kukhan Yoon ,  Junsoo Lee ,  SungII Cho ,  Yong-Joon Choi

Inventor： Jong-Kyu Kim ,  Sangsup Jeong ,  Kukhan Yoon ,  Junsoo Lee ,  SungII Cho ,  Yong-Joon Choi

IPC: H01L21/20 ,  H01L27/108 ,  H01L49/02 ,  H01L27/02 ,  H01L21/311

CPC classification number: H01L28/91 ,  H01L21/31144 ,  H01L27/0203 ,  H01L27/10817 ,  H01L27/10852

Abstract: A method of fabricating a semiconductor memory device includes forming a hard mask pattern using a damascene method on a lower mold layer stacked on a substrate and etching the lower mold layer using the hard mask pattern as an etch mask to define a protrusion under the hard mask pattern. A support pattern is formed on a top surface of the etched lower mold layer, the top surface of the etched lower mold layer being located at a lower level than a top surface of the protrusion. A lower electrode supported by the support pattern is formed.

Abstract translation: 一种制造半导体存储器件的方法包括：使用镶嵌方法在堆叠在衬底上的下模层上形成硬掩模图案，并使用硬掩模图案蚀刻下模层作为蚀刻掩模，以在硬掩模之下限定突起 模式。 在蚀刻的下模层的顶表面上形成支撑图案，蚀刻的下模层的顶表面位于比突起的顶表面更低的水平。 形成由支撑图案支撑的下电极。

公开(公告)号：US08907360B2

公开(公告)日：2014-12-09

申请号：US12917937

申请日：2010-11-02

Applicant: Chung Hoon Lee ,  Sum Geun Lee ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee

Inventor： Chung Hoon Lee ,  Sum Geun Lee ,  Sang Ki Jin ,  Jin Cheol Shin ,  Jong Kyu Kim ,  So Ra Lee

IPC: H01L33/00 ,  H01L33/46 ,  H01L33/60

CPC classification number: H01L33/46 ,  H01L33/0079 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: An exemplary embodiment of the present invention discloses a light emitting diode chip including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including an active layer arranged between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, and a distributed Bragg reflector to reflect light emitted from the light emitting structure. The distributed Bragg reflector has a reflectivity of at least 90% for light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range.

Abstract translation: 本发明的一个示例性实施例公开了一种发光二极管芯片，其包括基板，布置在基板上的发光结构，发光结构包括布置在第一导电型半导体层和第二导电型半导体之间的有源层 层和分布布拉格反射器以反射从发光结构发射的光。 分布布拉格反射器对于蓝色波长范围内的第一波长的光，绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90％的反射率。

公开(公告)号：US08896011B2

公开(公告)日：2014-11-25

申请号：US12050873

申请日：2008-03-18

Applicant: Yeo Jin Yoon ,  Jong Kyu Kim ,  Jun Hee Lee

Inventor： Yeo Jin Yoon ,  Jong Kyu Kim ,  Jun Hee Lee

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/385 ,  H01L33/387 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with respect to those of adjacent another of the light emitting cells.

Abstract translation: 根据本发明的AC LED包括衬底和至少一个具有串联连接在衬底上的多个发光单元的串联阵列。 每个发光单元包括由形成在基板顶部上的第一导电化合物半导体层构成的下半导体层，由形成于下半导体层顶部的第二导电化合物半导体层构成的上半导体层，活性层 介于下半导体层和上半导体层之间的下电极，形成在衬底的第一角上露出的下半导体层上的下电极，形成在上半导体层上的上电极层和形成在上电极层上的上电极焊盘 在基片的第二个角落。 上电极焊盘和下电极分别设置在彼此对角相对的角上，并且各发光单元被布置成使得一个发光单元的上电极焊盘和下电极相对于 相邻另一个发光单元的那些。

公开(公告)号：US08716727B2

公开(公告)日：2014-05-06

申请号：US12065063

申请日：2006-09-06

Applicant: Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Jong Kyu Kim ,  Jun Hee Lee

Inventor： Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Jong Kyu Kim ,  Jun Hee Lee

IPC: H01L33/00

CPC classification number: H01L25/0753 ,  H01L33/007 ,  H01L33/20 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265

Abstract: Disclosed is an AC light emitting device having photonic crystal structures and a method of fabricating the same. The light emitting device includes a plurality of light emitting cells and metallic wirings electrically connecting the light emitting cells with one another. Further, each of the light emitting cells includes a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on one region of the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers. In addition, a photonic crystal structure is formed in the second conductive type semiconductor layer. The photonic crystal structure prevents light emitted from the active layer from laterally propagating by means of a periodic array, such that light extraction efficiency of the light emitting device can be improved. Furthermore, the metallic wirings electrically connect a plurality of light emitting cells with one another such that an AC light emitting device can be provided.

Abstract translation: 公开了具有光子晶体结构的AC发光器件及其制造方法。 发光器件包括多个发光单元和将发光单元彼此电连接的金属布线。 此外，每个发光单元包括第一导电类型半导体层，设置在第一导电类型半导体层的一个区域上的第二导电类型半导体层以及置于第一和第二导电类型半导体层之间的有源层。 此外，在第二导电型半导体层中形成光子晶体结构。 光子晶体结构防止从有源层发射的光通过周期性阵列横向传播，使得可以提高发光器件的光提取效率。 此外，金属配线将多个发光单元彼此电连接，从而可以提供交流发光装置。

公开(公告)号：US08704283B2

公开(公告)日：2014-04-22

申请号：US12724450

申请日：2010-03-16

Applicant: Jong-Kyu Kim ,  Sang-Sup Jeong ,  Sung-Gil Choi ,  Heung-Sik Park ,  Kuk-Han Yoon ,  Yong-Joon Choi

Inventor： Jong-Kyu Kim ,  Sang-Sup Jeong ,  Sung-Gil Choi ,  Heung-Sik Park ,  Kuk-Han Yoon ,  Yong-Joon Choi

IPC: H01L27/108

CPC classification number: H01L27/10852 ,  H01L28/91

Abstract: A semiconductor device includes a lower electrode, a supporting member enclosing at least an upper portion of the lower electrode, a dielectric layer on the lower electrode and the supporting member, and an upper electrode disposed on the dielectric layer. The supporting member may have a first portion that extends over an upper part of the sidewall of the lower electrode, and a second portion covering the upper surface of the lower electrode. The first portion of the supporting member protrudes above the lower electrode.

Abstract translation: 半导体器件包括下电极，至少包围下电极的上部的支撑构件，下电极上的电介质层和支撑构件，以及设置在电介质层上的上电极。 支撑构件可以具有在下电极的侧壁的上部上延伸的第一部分和覆盖下电极的上表面的第二部分。 支撑构件的第一部分突出在下电极的上方。