公开(公告)号：US08623527B2

公开(公告)日：2014-01-07

申请号：US13199521

申请日：2011-08-31

Applicant: Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

Inventor： Jennifer Y. Sun ,  Ren-Guan Duan ,  Jie Yuan ,  Li Xu ,  Kenneth S. Collins

IPC: B32B18/00 ,  C04B35/505 ,  C04B35/486

CPC classification number: C04B35/505 ,  B32B18/00 ,  C04B35/486 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/6582 ,  C04B2235/668 ,  C04B2235/762 ,  C04B2235/80 ,  C04B2235/9669 ,  H01J37/32467 ,  H01J37/32504 ,  Y10T428/31678

Abstract: A ceramic coated article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic coated article includes an aluminum substrate coated with a solid solution coating formed from a combination of yttrium oxide and zirconium oxide. The ceramic coating is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Abstract translation: 用于半导体加工的陶瓷涂层制品，其耐受含卤素等离子体的侵蚀。 陶瓷涂覆制品包括涂覆有由氧化钇和氧化锆的组合形成的固溶体涂层的铝基材。 陶瓷涂层由摩尔浓度范围为约90摩尔％至约70摩尔％的氧化钇和摩尔浓度为约10摩尔％至约30摩尔％的氧化锆形成。 在第二个实施方案中，陶瓷制品包括由摩尔浓度为约96摩尔％至约94摩尔％的氧化锆形成的陶瓷，摩尔浓度为约4摩尔％至约6摩尔％的氧化钇 。

公开(公告)号：US08414736B2

公开(公告)日：2013-04-09

申请号：US12787198

申请日：2010-05-25

Applicant: Kenneth S. Collins ,  Andrew Nguyen ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Ming Xu

Inventor： Kenneth S. Collins ,  Andrew Nguyen ,  Martin Jeffrey Salinas ,  Imad Yousif ,  Ming Xu

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J7/24 ,  H05B31/26

CPC classification number: H01J37/32082 ,  H01J37/321 ,  H01J37/3211 ,  H01J37/32935

Abstract: Correction of skew in plasma etch rate distribution is performed by tilting the overhead RF source power applicator about a tilt axis whose angle is determined from skew in processing data. Complete freedom of movement is provided by incorporating exactly three axial motion servos supporting a floating plate from which the overhead RF source power applicator is suspended.

Abstract translation: 等离子体蚀刻速率分布的偏斜校正是通过倾斜顶置RF源功率施加器围绕倾斜轴进行的，该倾斜轴的角度由处理数据中的偏斜确定。 完整的自由度通过结合三个轴向运动伺服机构来提供，该伺服机构支撑顶板RF源功率施加器悬挂在其上的浮动板。

公开(公告)号：US08382999B2

公开(公告)日：2013-02-26

申请号：US12711061

申请日：2010-02-23

Applicant: Ankur Agarwal ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  Thorsten B. Lill

Inventor： Ankur Agarwal ,  Kenneth S. Collins ,  Shahid Rauf ,  Kartik Ramaswamy ,  Thorsten B. Lill

IPC: G01L21/30 ,  G01R31/00

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32706

Abstract: Radial distribution of etch rate is controlled by controlling the respective duty cycles of pulsed VHF source power applied to the ceiling and pulsed HF or MF bias power on the workpiece. Net average electrical charging of the workpiece is controlled by providing an electronegative process gas and controlling the voltage of a positive DC pulse on the workpiece applied during pulse off times of the pulsed VHF source power.

Abstract translation: 通过控制施加到天花板的脉冲VHF源功率和工件上的脉冲HF或MF偏置功率的相应占空比来控制蚀刻速率的径向分布。 通过提供电负性处理气体并控制在脉冲VHF源功率的脉冲关闭期间施加的工件上的正DC脉冲的电压来控制工件的净平均充电。

公开(公告)号：US20130022838A1

公开(公告)日：2013-01-24

申请号：US13573354

申请日：2012-09-10

Applicant: Jennifer Y. Sun ,  Kenneth S. Collins ,  Ren-Guan Duan ,  Senh Thach ,  Thomas Graves ,  Xiaoming He ,  Jie Yuan

Inventor： Jennifer Y. Sun ,  Kenneth S. Collins ,  Ren-Guan Duan ,  Senh Thach ,  Thomas Graves ,  Xiaoming He ,  Jie Yuan

IPC: C04B35/505 ,  B32B18/00

CPC classification number: C04B35/505 ,  C04B35/486 ,  C04B35/495 ,  C04B35/50 ,  C04B2235/3217 ,  C04B2235/3222 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/404 ,  C04B2235/762 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/81 ,  Y10T428/31

Abstract: Specialty ceramic materials which resist corrosion/erosion under semiconductor processing conditions which employ a corrosive/erosive plasma. The corrosive plasma may be a halogen-containing plasma. The specialty ceramic materials have been modified to provide a controlled electrical resistivity which suppresses plasma arcing potential.

Abstract translation: 在半导体加工条件下耐腐蚀/腐蚀等离子体腐蚀/腐蚀的特种陶瓷材料。 腐蚀性等离子体可以是含卤素等离子体。 特种陶瓷材料已经被修改以提供抑制等离子体电弧势的受控电阻率。

公开(公告)号：US08357264B2

公开(公告)日：2013-01-22

申请号：US12128963

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: H01L21/00 ,  C23C16/00

CPC classification number: H01J37/32935 ,  H01J37/32091 ,  H01J37/32183

Abstract: In a plasma reactor employing source and bias RF power generators, plasma is stabilized against an engineered transient in the output of either the source or bias power generator by a compensating modulation in the other generator.

Abstract translation: 在采用源和偏压射频功率发生器的等离子体反应器中，等离子体通过在另一发生器中的补偿调制而在源极或偏置功率发生器的输出中的设计瞬态稳定。

公开(公告)号：US20130008604A1

公开(公告)日：2013-01-10

申请号：US13613941

申请日：2012-09-13

Applicant: KALLOL BERA ,  JAMES D. CARDUCCI ,  AJIT BALAKRISHNA ,  SHAHID RAUF ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  HAMID NOORBAKHSH

Inventor： KALLOL BERA ,  JAMES D. CARDUCCI ,  AJIT BALAKRISHNA ,  SHAHID RAUF ,  KENNETH S. COLLINS ,  ANDREW NGUYEN ,  HAMID NOORBAKHSH

IPC: H01L21/306

CPC classification number: H01J37/32834 ,  C23C16/4412 ,  H01L21/67017 ,  H01L21/67167 ,  H01L21/6719

Abstract: Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent.

公开(公告)号：US08337661B2

公开(公告)日：2012-12-25

申请号：US12128926

申请日：2008-05-29

Applicant: Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

Inventor： Steven C. Shannon ,  Kartik Ramaswamy ,  Daniel J. Hoffman ,  Matthew L. Miller ,  Kenneth S. Collins

IPC: H01L21/00 ,  C23C16/00

CPC classification number: H01J37/32935 ,  H01J37/32091 ,  H01J37/32183

Abstract: A plasma reactor for processing a workpiece such as a semiconductor wafer using predetermined transients of plasma bias power or plasma source power has unmatched low power RF generators synchronized to the transients to minimize transient-induced changes in plasma characteristics.

Abstract translation: 使用等离子体偏置功率或等离子体源功率的预定瞬变来处理诸如半导体晶片的工件的等离子体反应器具有与瞬变同步的无与伦比的低功率RF发生器，以使等离子体特性的瞬变诱发变化最小化。

公开(公告)号：US20120043023A1

公开(公告)日：2012-02-23

申请号：US13047052

申请日：2011-03-14

Applicant: Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

Inventor： Kartik Ramaswamy ,  Igor Markovsky ,  Zhigang Chen ,  James D. Carducci ,  Kenneth S. Collins ,  Shahid Rauf ,  Nipun Misra ,  Leonid Dorf ,  Zheng John Ye

IPC: H01L21/306

CPC classification number: H01J37/32091 ,  H01J37/32018 ,  H01J37/32082 ,  H01J37/32183 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32587 ,  H01J37/32596 ,  H01J37/3266 ,  H01J37/32715 ,  H01J37/32834

Abstract: The disclosure pertains to a capactively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a folded structure and symmetrical power distribution.

Abstract translation: 本公开涉及一种通过具有折叠结构和对称功率分布的阻抗匹配同轴谐振器施加VHF功率的Capactively coupled等离子体源。

公开(公告)号：US20120018402A1

公开(公告)日：2012-01-26

申请号：US13184562

申请日：2011-07-17

Applicant: James D. Carducci ,  Zhigang Chen ,  Shahid Rauf ,  Kenneth S. Collins

Inventor： James D. Carducci ,  Zhigang Chen ,  Shahid Rauf ,  Kenneth S. Collins

IPC: C23F1/00 ,  B32B3/24 ,  C23C14/48 ,  B32B1/08 ,  C23F1/08 ,  H05H1/24

CPC classification number: H01J37/32623 ,  H01J37/32082 ,  H01J37/32458 ,  H01J37/32495 ,  H01L21/67069 ,  Y10T428/13

Abstract: The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of two or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.

Abstract translation: 本发明公开了一种等离子体处理装置，其包括室盖，室主体和支撑组件。 室主体限定用于容纳等离子体的处理容积，用于支撑室盖。 腔室主体包括室侧壁，底壁和衬套组件。 腔室侧壁和底壁限定用于容纳等离子体的处理体积。 设置在处理容积内的衬套组件包括形成在其上的两个或更多个槽，用于提供轴对称RF电流路径。 支撑组件支撑用于在室主体内进行加工的基板。 利用具有多个对称槽的衬套组件，本发明可以防止其电磁场为方位角不对称。

公开(公告)号：US20110266256A1

公开(公告)日：2011-11-03

申请号：US12916462

申请日：2010-10-29

Applicant: James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

Inventor： James P. Cruse ,  Dermot Cantwell ,  Ming Xu ,  Charles Hardy ,  Benjamin Schwarz ,  Kenneth S. Collins ,  Andrew Nguyen ,  Zhifeng Sui ,  Evans Lee

IPC: C23F1/00 ,  C23C16/455

CPC classification number: H01L21/6719 ,  H01J37/32899

Abstract: Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include providing a substrate to the first process chamber of the twin chamber processing system, wherein the first process chamber has a first processing volume that is independent from a second processing volume of the second process chamber; providing one or more processing resources from the shared processing resources to only the first processing volume of the first process chamber; and performing a process on the substrate in the first process chamber.

Abstract translation: 本文提供了具有第一处理室和第二处理室以及共享处理资源的双室处理系统中处理基板的方法。 在一些实施例中，方法可以包括向双室处理系统的第一处理室提供衬底，其中第一处理室具有独立于第二处理室的第二处理容积的第一处理容积; 将所述共享处理资源中的一个或多个处理资源提供给所述第一处理室的所述第一处理空间; 以及在所述第一处理室中的所述基板上进行处理。