Abstract:
In some embodiments, a method may be provided for calibrating integrated circuit temperature sensors. The method may include sensing a first temperature using a first temperature sensor and a second temperature using a second temperature sensor. The first temperature sensor may be calibrated and is external to a package of the integrated circuit. The second temperature sensor may be included in the integrated circuit. The method may include increasing a temperature of the integrated circuit. The method may include allowing the integrated circuit and the package to thermally equilibrate over a first period of time. The method may include sensing a first slope of a temperature decay by the first temperature sensor. The method may include sensing a second slope of a temperature decay by the second temperature sensor. The method may include calibrating the second temperature sensor responsive to a difference between the first and second temperatures and the first and second slopes.
Abstract:
A sensor includes a sensor array formed on a first side of a substrate and at least one circuit operative to communicate with the sensor array formed on a second side of the substrate. At least one via extends through the substrate to electrically connect the sensor array to the at least one circuit. Placing the at least one circuit on the second side of the substrate allows the sensor array to occupy substantially all of the first side of the substrate.
Abstract:
A top package used in a PoP (package-on-package) package includes two memory die stacked with a redistribution layer (RDL) between the die. The first memory die is encapsulated in an encapsulant and coupled to a top surface of the RDL. A second memory die is coupled to a bottom surface of the RDL. The second memory die is coupled to the RDL with either a capillary underfill material or a non-conductive paste. The RDL includes routing between each of the memory die and one or more terminals coupled to the RDL on a periphery of the die.
Abstract:
Chip sealing structures and methods of manufacture are described. In an embodiment, a chip structure includes a main body area formed of a substrate, a back-end-of-the-line (BEOL) build-up structure spanning over the substrate, and chip edge sidewalls extending from a back surface of the substrate to a top surface of the BEOL build-up structure and laterally surrounding the substrate and the BEOL build-up structure. In accordance with embodiments, the chip structure may further include a conformal sealing layer covering at least a first chip edge sidewall of the chip edge sidewalls and a portion of the top surface of the BEOL build-up structure, and forming a lip around the top surface of the BEOL build-up structure.
Abstract:
Various embodiments of an integrated circuit (IC) die package are disclosed. An IC die package includes an IC die, an interposer structure electrically connected to the IC die, a first bonding structure, a second bonding structure, and a molding compound layer. The first bonding structure includes a first dielectric layer disposed on the IC die and a first conductive plug disposed in the first dielectric layer. The second bonding structure includes a second dielectric layer disposed on the interposer structure and a second conductive plug disposed in the second dielectric layer. The molding compound layer includes a mold region and a mold cavity.
Abstract:
Integrated circuit (IC) structures, electronic modules, and methods of fabrication are described in which direct bonded interfaces are removed at corners or edges to counteract the potential for non-bonding or delamination. This can be accomplished during singulation, in which a side recess is formed through an entire thickness of an electronic component and into a direct bonded die, followed by final singulation of the IC structure.
Abstract:
Electronic packages and electronic systems are described in which a package redistribution layer of the electronic package includes structural features such a via line connections to reduce stress concentration, particularly when the package redistribution layer is formed of organic dielectric materials.
Abstract:
Microelectronic structures with selectively applied underfill material and/or edge bond material are described. In an embodiment, isolated underfill regions and/or edge bond regions are applied to adjacent to one or more edges of an electronic device and form a plurality of vent openings along the one or more edges.
Abstract:
Systems that include integrated circuit dies and voltage regulator units are disclosed. Such systems may include a voltage regulator module and an integrated circuit mounted in a common system package. The voltage regulator module may include a voltage regulator circuit and one or more passive devices mounted to a common substrate, and the integrated circuit may include a System-on-a-chip. The system package may include an interconnect region that includes wires fabricated on multiple conductive layers within the interconnect region. At least one power supply terminal of the integrated circuit may be coupled to an output of the voltage regulator module via a wire included in the interconnect region.
Abstract:
Semiconductor packages formed utilizing wafer reconstitution and optionally including an integrated heat spreader and methods of fabrication are described. In an embodiment, a semiconductor package includes a first package level, a second package level including one or more second-level chiplets, and a heat spreader bonded to the second package level with a metallic layer, which may include one or more intermetallic compounds formed by transient liquid phase bonding.