公开(公告)号：US20170125268A1

公开(公告)日：2017-05-04

申请号：US15403937

申请日：2017-01-11

Applicant: International Business Machines Corporation

Inventor： Bing Dang ,  John U. Knickerbocker ,  Cornelia Kang-I Tsang

IPC: H01L21/67 ,  H01L21/683 ,  B23K26/36

CPC classification number: H01L21/67132 ,  B23K26/36 ,  B23K26/57 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/6838 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  Y10S156/93 ,  Y10S156/941 ,  Y10T156/1158 ,  Y10T156/1917

Abstract: Structures and methods are provided for temporarily bonding handler wafers to device wafers using bonding structures that include one or more releasable layers which are laser-ablatable using mid-wavelength infrared radiation

公开(公告)号：US09636783B2

公开(公告)日：2017-05-02

申请号：US14265672

申请日：2014-04-30

Applicant: International Business Machines Corporation

Inventor： Russell A. Budd ,  Bing Dang ,  John U. Knickerbocker

IPC: H01L21/00 ,  B23K26/364 ,  H01L21/67 ,  B23K26/36 ,  H01L21/78 ,  H01L21/304 ,  H01L21/306 ,  B23K26/06 ,  B23K26/18 ,  B23K26/38 ,  B23K26/402 ,  B23K26/0622 ,  B23K101/40 ,  B23K103/00

CPC classification number: B23K26/364 ,  B23K26/0624 ,  B23K26/0626 ,  B23K26/18 ,  B23K26/38 ,  B23K26/402 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/304 ,  H01L21/306 ,  H01L21/67115 ,  H01L21/78

Abstract: A method includes cutting a semiconductor wafer on a substrate wafer using at least one laser. By setting the laser to a set of parameters that define a laser beam, the laser beam can avoid ablation of the substrate wafer. The laser beam is also set equal to, or within, an ablation threshold of the semiconductor wafer for selectively ablating the semiconductor wafer. The set of parameters includes wavelength, pulse width and pulse frequency.

公开(公告)号：US20160313278A1

公开(公告)日：2016-10-27

申请号：US14694316

申请日：2015-04-23

Applicant: International Business Machines Corporation

Inventor： John U. Knickerbocker ,  Effendi Leobandung

IPC: G01N27/414 ,  G01N33/487

CPC classification number: G01N33/48721

Abstract: A nanopore FET sensor device and method of making. The nanopore FET sensor device includes a FET device stack of material layers including a source, channel and drain layers, and a nanoscale hole through the FET device stack to penult flow of strands of molecular material, e.g., DNA, therethrough. The perimeter of the nanoscale hole forms a FET device gate surface. The source and drain layers are provided with respective contacts for connection with measuring instruments that measure a flow of current therebetween. The molecular strands having charged portions pass from one side of a wafer substrate to the other side through the (nanopore) gate and modulate the current flow sensed at the source or drain terminals. The sensor collects real-time measurements of the current flow modulations for use in identifying the type of molecule. Multiple measurements by the same nanopore FET sensor are collected and compared for enhanced detection.

Abstract translation: 纳米孔FET传感器装置及其制造方法。 纳米孔FET传感器装置包括包括源极，沟道和漏极层的材料层的FET器件堆叠，以及穿过FET器件堆叠的纳米级孔，以通过其延伸分子材料（例如DNA）的线束。 纳米级孔的周长形成FET器件栅极表面。 源极和漏极层设置有用于与测量其间的电流的测量仪器连接的相应触点。 具有带电部分的分子束从晶片衬底的一侧通过（纳米孔）栅极的另一侧，并调制在源极或漏极端子处感测的电流。 传感器收集当前流量调节的实时测量，以用于识别分子的类型。 通过相同的纳米孔FET传感器的多次测量被收集和比较，以增强检测。

公开(公告)号：US20160240513A1

公开(公告)日：2016-08-18

申请号：US15137123

申请日：2016-04-25

Applicant: International Business Machines Corporation

Inventor： Bing Dang ,  John U. Knickerbocker ,  Yang Liu ,  Yu Luo ,  Steven L. Wright

IPC: H01L25/065 ,  H01L23/31 ,  H01L23/50 ,  H01L23/00

CPC classification number: H01L25/0657 ,  H01L21/563 ,  H01L21/6835 ,  H01L22/14 ,  H01L22/20 ,  H01L23/13 ,  H01L23/3114 ,  H01L23/3157 ,  H01L23/3178 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49894 ,  H01L23/50 ,  H01L24/11 ,  H01L24/17 ,  H01L24/81 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68381 ,  H01L2224/11334 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/1701 ,  H01L2224/17104 ,  H01L2224/1712 ,  H01L2224/1751 ,  H01L2224/81815 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2225/06555 ,  H01L2225/06565

Abstract: A structure includes an electrical interconnection between a first substrate including a plurality of protrusions and a second substrate including a plurality of solder bumps, the plurality of protrusions includes sharp tips that penetrate the plurality of solder bumps, and a permanent electrical interconnection is established by physical contact between the plurality of protrusions and the plurality of solder bumps including a metallurgical joint.

Abstract translation: 一种结构包括在包括多个突起的第一基板和包括多个焊料凸块的第二基板之间的电互连，所述多个突起包括穿透多个焊料凸块的尖锐尖端，并且通过物理建立永久电互连 所述多个突起与所述多个焊料凸块之间的接触包括冶金接头。

公开(公告)号：US09324601B1

公开(公告)日：2016-04-26

申请号：US14536175

申请日：2014-11-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Robert D. Allen ,  Paul S. Andry ,  Jeffrey D. Gelorme ,  Li-wen Hung ,  John U. Knickerbocker ,  Cornelia K. Tsang

IPC: H01L21/00 ,  H01L23/34 ,  H01L21/683 ,  H01L21/306 ,  H01L21/304 ,  H01L25/03 ,  H01L21/762 ,  H01L23/00

CPC classification number: H01L21/6836 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/463 ,  H01L21/6835 ,  H01L21/76256 ,  H01L21/76898 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L25/03 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68359 ,  H01L2221/68381

Abstract: A method for adhesive bonding in microelectronic device processing is provided that includes bonding a handling wafer to a front side of a device wafer with an adhesive comprising phenoxy resin; and thinning the device wafer from the backside of the device wafer while the device wafer is adhesively engaged to the handling wafer. After the device wafer has been thinned, the adhesive comprising phenoxy resin may be removed by laser debonding, wherein the device wafer is separated from the handling wafer.

Abstract translation: 提供了一种微电子器件处理中的粘合方法，其包括用包含苯氧基树脂的粘合剂将处理晶片粘合到器件晶片的前侧; 以及当器件晶片与处理晶片粘合地接合时，从器件晶片的背面使器件晶片变薄。 在器件晶片减薄之后，可以通过激光剥离除去包含苯氧基树脂的粘合剂，其中将器件晶片与处理晶片分离。

公开(公告)号：US09029238B2

公开(公告)日：2015-05-12

申请号：US13649458

申请日：2012-10-11

Applicant: International Business Machines Corporation

Inventor： Paul S. Andry ,  Russell A. Budd ,  John U. Knickerbocker ,  Robert E. Trzcinski ,  Douglas C. La Tulipe, Jr.

IPC: H01L21/30 ,  H01L21/46 ,  H01L23/498 ,  H01L29/00 ,  H01L21/02 ,  H01L21/683 ,  H01L21/20

CPC classification number: H01L23/49827 ,  H01L21/02 ,  H01L21/2007 ,  H01L21/6835 ,  H01L29/00 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for processing a semiconductor wafer includes applying a release layer to a transparent handler. An adhesive layer, that is distinct from the release layer, is applied between a semiconductor wafer and the transparent handler having the release layer applied thereon. The semiconductor wafer is bonded to the transparent handler using the adhesive layer. The semiconductor wafer is processed while it is bonded to the transparent handler. The release layer is ablated by irradiating the release layer through the transparent handler with a laser. The semiconductor wafer is removed from the transparent handler.

Abstract translation: 一种用于处理半导体晶片的方法包括将释放层应用于透明处理器。 将不同于剥离层的粘合剂层施加在半导体晶片和其上施加有剥离层的透明处理器之间。 使用粘合剂层将半导体晶片结合到透明处理器。 半导体晶片在与透明处理器结合时进行处理。 通过用激光器通过透明处理器照射释放层来消除释放层。 从透明处理器移除半导体晶片。

公开(公告)号：US11539080B2

公开(公告)日：2022-12-27

申请号：US16787167

申请日：2020-02-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Qianwen Chen ,  Bing Dang ,  John U. Knickerbocker

IPC: H01M10/0585 ,  H01M10/052 ,  H01M10/04 ,  A61B5/00

Abstract: A method for integrating a thin film microbattery with electronic circuitry includes forming a release layer over a handler, forming a thin film microbattery over the release layer of the handler, removing the thin film microbattery from the handler, depositing the thin film microbattery on an interposer, forming electronic circuitry on the interposer, and sealing the thin film microbattery and the electronic circuitry to create individual microbattery modules.

公开(公告)号：US11201138B2

公开(公告)日：2021-12-14

申请号：US16717068

申请日：2019-12-17

Applicant: International Business Machines Corporation

Inventor： Bing Dang ,  Li-Wen Hung ,  John U. Knickerbocker ,  Jae-Woong Nah

IPC: H01L25/065 ,  H01L23/00 ,  H01L21/02 ,  H01L25/00 ,  H01L23/48

Abstract: A method of manufacturing a multi-layer wafer is provided. Under bump metallization (UMB) pads are created on each of two heterogeneous wafers. A conductive means is applied above the UMB pads on at least one of the two heterogeneous wafers. The two heterogeneous wafers are low temperature bonded to adhere the UMB pads together via the conductive means. At least one stress compensating polymer layer may be applied to at least one of two heterogeneous wafers. The stress compensating polymer layer has a polymer composition of a molecular weight polymethylmethacrylate polymer at a level of 10-50% with added liquid multifunctional acrylates forming the remaining 50-90% of the polymer composition.

公开(公告)号：US11169399B2

公开(公告)日：2021-11-09

申请号：US16213419

申请日：2018-12-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Emily R. Kinser ,  John U. Knickerbocker ,  Roy R. Yu

IPC: G02C7/08 ,  G02C7/04 ,  B29D11/00

Abstract: Lenses and methods for adjusting the focus of a lens include dividing multiple light sensors in a lens into four quadrants. A position of the lens relative to occlusion along a top and bottom edge of the lens is determined based on numbers of bits in respective bit sequences from light sensors in respective regions of the lens. An optimal focal length for the lens is determined based on the position of the lens. The focal length of the lens is adjusted to match the optimal focal length.

公开(公告)号：US10694951B2

公开(公告)日：2020-06-30

申请号：US15293267

申请日：2016-10-13

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Emily R. Kinser ,  John U. Knickerbocker ,  Roy R. Yu

IPC: A61B5/00 ,  A61N5/06 ,  A61N1/36 ,  A61N5/067

Abstract: Surface enhanced Raman spectroscopy is employed to obtain chemical data with respect to body tissue and cells. The chemical environments of stimulation implants and drug-delivery catheters are spectroscopically monitored in real time using an implantable probe. The probe includes a surface enhancer that facilitates surface enhanced Raman spectroscopy in opposing relation to an array of optical fibers. Light emitted by the optical fibers can be employed for chemical detection and/or tissue stimulation. Wavelength and optical power are selected based on whether the probe is employed for such detection or stimulation. Fabrication of a probe assembly that enables surface enhanced Raman spectroscopy is further disclosed.