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    Semiconductor device
    102.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08835918B2

    公开(公告)日：2014-09-16

    申请号：US13608039

    申请日：2012-09-10

    申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Toshinari Sasaki

    发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Toshinari Sasaki

    IPC分类号： H01L29/786 ,  H01L27/12

    CPC分类号： H01L29/7869 ,  H01L27/1218 ,  H01L27/1225

    摘要： To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer, which is embedded in a base insulating layer and whose upper surface is at least partly exposed from the base insulating layer, and a wiring layer provided above the oxide semiconductor layer is electrically connected to the electrode layer or a part of a low-resistance region of the oxide semiconductor layer, which overlaps with the electrode layer.

    摘要翻译： 为了提供包括氧化物半导体并且能够高速运行的晶体管或包括晶体管的高度可靠的半导体器件，提供了包括一对低电阻区域和沟道形成区域的氧化物半导体层的晶体管 在基底绝缘层上嵌入并且其上表面至少部分地从基底绝缘层露出的电极层上，并且设置在氧化物半导体层上方的布线层电连接到电极层或电极层的一部分 氧化物半导体层的低电阻区域与电极层重叠。

    Semiconductor device having insulating stripe patterns
    103.
    发明授权
    Semiconductor device having insulating stripe patterns 有权
    半导体器件具有绝缘条纹图案

    公开(公告)号：US07709895B2

    公开(公告)日：2010-05-04

    申请号：US10357381

    申请日：2003-02-04

    申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa

    发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Hideomi Suzawa

    IPC分类号： H01L27/12

    CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281

    摘要： An uneven portion is formed on a substrate extending in a linear shape stripe pattern, convex portions of an insulating film that intersects with a crystalline semiconductor film divided into island shapes are removed, and an amorphous semiconductor film is formed on the insulating film. The semiconductor film is melted and flows into concave portions of the insulating film, where it crystallizes, and the semiconductor film that remains on the convex portions of the insulating film is removed. A semiconductor film divided into island shapes is then formed from the semiconductor film formed in the concave portions, the convex portions of the insulating film are removed in portions where channel forming regions are to be formed, thus exposing side surface portions of the semiconductor film. A gate insulating film and a gate electrode contacting the side surface portions and upper surface portions of the semiconductor film are then formed.

    摘要翻译： 在以线状条状图案延伸的基板上形成凹凸部，除去与分离成岛状的结晶半导体膜相交的绝缘膜的凸部，在绝缘膜上形成非晶半导体膜。 半导体膜熔化并流入绝缘膜的凹部，在其中结晶，并且残留在绝缘膜的凸部上的半导体膜被去除。 然后，从形成在凹部中的半导体膜形成分成岛状的半导体膜，在要形成沟道形成区域的部分去除绝缘膜的凸部，从而露出半导体膜的侧表面部分。 然后形成与半导体膜的侧表面部分和上表面部分接触的栅极绝缘膜和栅电极。

    Semiconductor memory cell and semiconductor memory device
    106.
    发明授权
    Semiconductor memory cell and semiconductor memory device 有权
    半导体存储单元和半导体存储器件

    公开(公告)号：US07507995B2

    公开(公告)日：2009-03-24

    申请号：US11447931

    申请日：2006-06-07

    申请人： Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Shunpei Yamazaki

    发明人： Kiyoshi Kato ,  Atsuo Isobe ,  Hidekazu Miyairi ,  Shunpei Yamazaki

    IPC分类号： H01L29/10

    CPC分类号： H01L21/28273 ,  H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/42332 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  H01L29/7881 ,  H01L29/792

    摘要： An insulating film with a linear concave portion is formed and a semiconductor film is formed thereon by deposition. The semiconductor film is irradiated with laser light to melt the semiconductor film and the melted semiconductor is poured into the concave portion, where it is crystallized. This makes distortion or stress accompanying crystallization concentrate on other regions than the concave portion. A surface of this crystalline semiconductor film is etched away, thereby forming in the concave portion a crystalline semiconductor film which is covered with side walls of the concave portion from the sides and which has no other grain boundaries than twin crystal. TFTs and memory TFTs having this crystalline semiconductor film as their channel regions are highly reliable, have high field effect mobility, and are less fluctuated in characteristic. Accordingly, a highly reliable semiconductor memory device which can operate at high speed is obtained.

    摘要翻译： 形成具有线状凹部的绝缘膜，通过沉积在其上形成半导体膜。 半导体膜用激光照射以熔化半导体膜，将熔融的半导体注入凹部，结晶化。 这使得伴随结晶的变形或应力集中在除了凹部之外的其它区域上。 蚀刻掉该晶体半导体膜的表面，从而在凹部形成从侧面被凹部的侧壁覆盖的结晶半导体膜，并且与半晶不具有其他晶界。 具有该晶体半导体膜作为其沟道区的TFT和存储TFT高度可靠，具有高的场效应迁移率，并且特性波动较小。 因此，可以获得能高速运转的高度可靠的半导体存储器件。

    Method of manufacturing thin film semiconductor device
    107.
    发明授权
    Method of manufacturing thin film semiconductor device 有权
    制造薄膜半导体器件的方法

    公开(公告)号：US07504327B2

    公开(公告)日：2009-03-17

    申请号：US11148426

    申请日：2005-06-09

    申请人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

    发明人： Shunpei Yamazaki ,  Atsuo Isobe ,  Tetsuji Yamaguchi ,  Hiromichi Godo

    IPC分类号： H01L21/425 ,  H01L21/00 ,  H01L21/84 ,  H01L21/8238 ,  H01L21/336

    CPC分类号： H01L27/1214 ,  H01L21/26586 ,  H01L27/127 ,  H01L27/1274 ,  H01L29/66757 ,  H01L29/78624

    摘要： In the invention, a low concentration impurity region is formed between a channel formation region and a source region or a drain region in a semiconductor layer and covered with a gate electrode layer in a thin film transistor The semiconductor layer is doped obliquely to the surface thereof using the gate electrode layer as a mask to form the low concentration impurity region. The semiconductor layer is formed to have an impurity region including an impurity element for imparting one conductivity which is different from conductivity of the thin film transistor, thereby being able to minutely control the properties of the thin film transistor.

    摘要翻译： 在本发明中，在半导体层中的沟道形成区域和源极区域或漏极区域之间形成低浓度杂质区域，并且在薄膜晶体管中被栅极电极层覆盖。半导体层倾斜地掺杂在其表面上 使用栅极电极层作为掩模形成低浓度杂质区域。 半导体层形成为具有包含用于赋予与薄膜晶体管的导电性不同的一种导电性的杂质元素的杂质区域，从而能够精细地控制薄膜晶体管的性质。

    Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it
    108.
    发明授权
    Semiconductor device with semiconductor circuit comprising semiconductor units, and method for fabricating it 有权
    具有半导体单元的半导体电路的半导体装置及其制造方法

    公开(公告)号：US07371623B2

    公开(公告)日：2008-05-13

    申请号：US10438818

    申请日：2003-05-16

    申请人： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

    发明人： Shunpei Yamazaki ,  Etsuko Fujimoto ,  Atsuo Isobe ,  Toru Takayama ,  Kunihiko Fukuchi

    IPC分类号： H01L21/84

    CPC分类号： H01L27/1237 ,  G02F1/13454 ,  H01L27/1248 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78645

    摘要： The invention is to provide a high-productivity method for fabricating a TFT device having different LDD structures on one and the same substrate, and the TFT device. Specifically, the invention provides a novel TFT structure, and a high-productivity method for fabricating it. A Ta film or a Ta-based film having good heat resistance is used for forming interconnections, and the interconnections are covered with a protective film. The interconnections can be subjected to heat treatment at high temperatures (400 to 700° C.), and, in addition, the protective film serves as an etching stopper. In the peripheral driving circuit portion in the device, TFTs having an LDD structure are disposed in a self-aligned process in which is used side walls 126 and 127; while in the pixel matrix portion therein, TFTs having an LDD structure are disposed in a non-self-aligned process in which is used an insulator 125.

    摘要翻译： 本发明提供一种用于制造在同一基板上具有不同LDD结构的TFT器件和TFT器件的高生产率方法。 具体地说，本发明提供了一种新颖的TFT结构，以及高生产率的制造方法。 使用具有良好耐热性的Ta膜或Ta基膜形成互连，并且互连用保护膜覆盖。 互连可以在高温（400〜700℃）下进行热处理，另外，保护膜用作蚀刻停止体。 在器件的外围驱动电路部分中，具有LDD结构的TFT以自对准工艺设置，其中使用侧壁126和127; 而在其中的像素矩阵部分中，具有LDD结构的TFT被设置在非自对准工艺中，其中使用绝缘体125。

    Semiconductor device and method of manufacturing the same
    109.
    发明申请
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20070085080A1

    公开(公告)日：2007-04-19

    申请号：US11636598

    申请日：2006-12-11

    申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

    发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Chiho Kokubo ,  Koichiro Tanaka ,  Akihisa Shimomura ,  Tatsuya Arao ,  Hidekazu Miyairi

    IPC分类号： H01L29/00

    CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L27/1281 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

    摘要： To provide a semiconductor device composed of a semiconductor element or a group of semiconductor elements, in which a crystalline semiconductor film having as few grain boundaries as possible in a channel formation region is formed on an insulating surface, which can operate at high speed, which have high current drive performance, and which are less fluctuated between elements. The method of the present invention includes: forming an insulating film with an opening on a substrate having an insulating surface; forming on the insulating film and over the opening an amorphous semiconductor film or a polycrystalline semiconductor film that has randomly-formed grain boundaries; forming a crystalline semiconductor film by melting the semiconductor film, pouring the melted semiconductor into the opening of the insulating film, and crystallizing or re-crystallizing the semiconductor film; and removing the crystalline semiconductor film except a portion of the crystalline semiconductor film that is in the opening to form a gate insulating film, which is in contact with the top face of the crystalline semiconductor film, and a gate electrode.

    摘要翻译： 为了提供一种由半导体元件或一组半导体元件组成的半导体器件，其中在绝缘表面上形成可在沟道形成区域中具有尽可能少的晶界的结晶半导体膜，其可以高速操作，其中 具有高电流驱动性能，并且元件之间波动较小。 本发明的方法包括：在具有绝缘表面的基板上形成具有开口的绝缘膜; 在绝缘膜上和开口上形成非晶半导体膜或随机形成晶界的多晶半导体膜; 通过熔化半导体膜形成晶体半导体膜，将熔融的半导体注入到绝缘膜的开口中，并使半导体膜结晶或再结晶; 以及去除除了开口中的结晶半导体膜的部分之外的晶体半导体膜以形成与晶体半导体膜的顶面接触的栅极绝缘膜和栅电极。