公开(公告)号：US6137219A

公开(公告)日：2000-10-24

申请号：US122823

申请日：1998-07-27

Applicant: Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

Inventor： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

IPC: H01J1/30 ,  G09G3/22 ,  H01J31/12

CPC classification number: G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  H01J2201/304 ,  H01J2201/319

Abstract: A field emission display having an n-channel high voltage thin film transistor is disclosed. According to the present invention, a signal for driving pixels controls by the nHVTFT attached with each pixel, therefore, the signal voltage of row and column drivers is exceedingly decreased. As a result, it is possible to implement a field emission display capable of providing a high quality picture in a low consumption power, a low driving voltage and inexpensive to manufacture, and preventing a line cross talk using the nHVTFT. By using a cylindrical resistive body underlying a cone-shaped emitter tip, the present invention is to provide a field emission display having an excellent contollability and stability of the emission current, and a dynamic driving capability.

Abstract translation: 公开了具有n沟道高电压薄膜晶体管的场致发射显示器。 根据本发明，通过每个像素附着的nHVTFT控制用于驱动像素的信号，因此，行和列驱动器的信号电压被极大地降低。 结果，可以实现能够以低功耗，低驱动电压提供高质量图像并且制造成本低廉的场致发射显示器，并且防止使用nHVTFT的线路串扰。 通过使用锥形发射极尖端下方的圆柱形电阻体，本发明提供了具有优异的发射电流的可配置性和稳定性以及动态驱动能力的场致发射显示器。

公开(公告)号：US6060823A

公开(公告)日：2000-05-09

申请号：US46700

申请日：1998-03-24

Applicant: Akihiko Okamoto ,  Hisashi Takemura ,  Yoshinori Tomihari ,  Naruaki Takada

Inventor： Akihiko Okamoto ,  Hisashi Takemura ,  Yoshinori Tomihari ,  Naruaki Takada

IPC: H01J1/304 ,  H01J1/02

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: A field emission cold cathode element designed with the objects of enabling control of overcurrents that arise at times of discharge without adding a power source or complicating the operating circuits, realizing high-frequency operation and lower power consumption without giving rise to short-circuit damage due to discharge breakdown, and moreover, suppressing increases in element temperature; wherein an n-type region underlying emitters is divided between three n-type semiconductor regions: a first n-type semiconductor region, a second n-type semiconductor region and a third n-type semiconductor region. A third n-type semiconductor region below the emitters formed so as to be surrounded by a p-type semiconductor region, a second n-type semiconductor region below the third n-type semiconductor region formed so as to be surrounded by a p-type semiconductor region, and a first n-type semiconductor region formed below the second n-type semiconductor region; wherein the cross section of the second n-type semiconductor region is smaller than the cross section of the third n-type semiconductor region, thereby producing an n-type region made up of three n-type semiconductor regions that has a constricted shape.

Abstract translation: 一种场致发射冷阴极元件，其设计的目的是能够控制放电时产生的过电流而不增加电源或使电路复杂化，实现高频操作和降低功耗，而不会引起短路损坏 放电击穿，此外，抑制元件温度升高; 其特征在于，在三个n型半导体区域之间划分下面发射极的n型区域：第一n型半导体区域，第二n型半导体区域和第三n型半导体区域。 形成为被p型半导体区域围绕的发射体下方的第三n型半导体区域，形成为被p型半导体区域围绕的第三n型半导体区域的第二n型半导体区域 半导体区域和形成在第二n型半导体区域下方的第一n型半导体区域; 其中所述第二n型半导体区域的横截面小于所述第三n型半导体区域的横截面，由此产生由具有收缩形状的三个n型半导体区域构成的n型区域。

公开(公告)号：US06028322A

公开(公告)日：2000-02-22

申请号：US120988

申请日：1998-07-22

Applicant: Behnam Moradi

Inventor： Behnam Moradi

IPC: H01J1/304 ,  H01J3/02 ,  H01L29/06 ,  H01L29/12

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J2201/319

Abstract: A field emission display includes a substrate, a plurality of emitters formed on the substrate, a semiconductor device formed in or on the substrate for controlling the flow of electrons to the emitters and a dielectric layer formed on the substrate. An extraction grid is formed on the dielectric layer substantially in a plane of tips of the plurality of emitters and includes openings each surrounding one of the emitters. The display also includes a transparent viewing screen, a transparent conductor formed on the viewing screen and a cathodoluminescent layer formed on the transparent conductor. The semiconductor device includes a gate dielectric and a field oxide. Significantly, the field oxide includes an interfacial region acting as a trapping and recombination site for mobile charge carriers. As a result, the semiconductor device is more robust and is better able to resist parameter shifts or performance degradation due to exposure to X-rays and photons that are incidentally generated along with the desired images on the display. This results in a more robust field emission display.

Abstract translation: 场发射显示器包括衬底，形成在衬底上的多个发射体，形成在衬底中或衬底上的半导体器件，用于控制向发射体的电子流和形成在衬底上的电介质层。 提取栅格基本上在多个发射器的尖端的平面上形成在电介质层上，并且包括围绕发射器之一的开口。 显示器还包括透明观察屏幕，形成在观察屏幕上的透明导体和形成在透明导体上的阴极发光层。 半导体器件包括栅极电介质和场氧化物。 重要的是，场氧化物包括用作移动电荷载体的捕获和重组位点的界面区域。 结果，半导体器件更坚固，并且能够更好地抵抗由于暴露于与显示器上的所需图像并行地产生的X射线和光子的参数偏移或性能劣化。 这导致更强劲的场致发射显示。

公开(公告)号：US5935639A

公开(公告)日：1999-08-10

申请号：US9140

申请日：1998-01-20

Applicant: John P. Sullivan ,  Thomas A. Friedmann

Inventor： John P. Sullivan ,  Thomas A. Friedmann

IPC: H01J1/304 ,  H01J9/02 ,  B05D5/12 ,  B05D3/06

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/319

Abstract: A novel field emitter device for cold cathode field emission applications, comprising a multi-layer resistive carbon film.The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced.Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials.

Abstract translation: 一种用于冷阴极场发射应用的新型场致发射器件，包括多层电阻碳膜。 本发明的多层膜由至少两层电阻碳材料构成，优选为非晶四面体配位的碳，使得相邻层的电阻率不同。 对于来自表面的电子发射，优选的结构包括具有比底层更低的电阻率的顶层。 对于边缘发射结构，膜的优选结构包括多个碳层，其中相邻层具有不同的电阻率。 通过选择沉积条件（包括沉积碳物质的能量），可以产生具有所需电阻率的某些元素如H，N，惰性气体或硼的存在或不存在的碳层。 根据本发明制造的场致发射体与常规的场致发射体材料相比显示出改进的电子发射特性。

公开(公告)号：US5910701A

公开(公告)日：1999-06-08

申请号：US19469

申请日：1998-02-05

Applicant: Hisashi Takemura

Inventor： Hisashi Takemura

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: A field-emission cold cathode having emitters 9 formed on silicon substrate 1, and a gate electrode film 7 formed on insulation film 6 and having openings over the emitters, further includes trenches 3 formed in silicon substrate 1, a plurality of emitters formed on regions surrounded by trenches 3, and n-type regions 5 formed on the silicon substrate directly below the emitters. Breakdowns caused by field concentrations brought about by the spread of current directly below the emitters can thus be prevented, and thus the emitter pitch within regions surrounded by trenches can be determined at will. When high voltage is impressed due to a discharge, the resistance connected to the emitters prevents the flow of large currents to the emitters and the occurrence of short-circuit damage.

Abstract translation: 形成在硅衬底1上的发射体9的场致发射冷阴极和形成在绝缘膜6上并且在发射体上具有开口的栅电极膜7还包括形成在硅衬底1中的沟槽3，形成在区域上的多个发射体 被沟槽3包围，形成在发射体正下方的硅衬底上的n型区域5。 因此可以防止由直接位于发射体下方的电流扩大引起的场浓度造成的击穿，因此可以随意确定由沟槽围绕的区域内的发射极间距。 当由于放电而施加高电压时，连接到发射器的电阻防止大电流流向发射器并发生短路损坏。

公开(公告)号：US5903098A

公开(公告)日：1999-05-11

申请号：US779223

申请日：1997-01-06

Applicant: Gary W. Jones

Inventor： Gary W. Jones

IPC: G01R33/10 ,  G02B27/00 ,  G02B27/01 ,  G02B27/22 ,  G09G3/00 ,  H01J3/02 ,  H01J9/02 ,  H01J9/24 ,  H01J29/94 ,  H01J31/12 ,  H04N5/70 ,  H04N5/74 ,  H04N13/00 ,  H01J1/30

CPC classification number: G09G3/003 ,  G01R33/10 ,  G02B27/017 ,  G02B27/0172 ,  G02B27/0176 ,  G02B27/2235 ,  G09G3/02 ,  H01J29/94 ,  H01J3/022 ,  H01J31/127 ,  H01J9/025 ,  H04N13/0422 ,  H04N13/0438 ,  H04N13/044 ,  H04N13/0459 ,  H04N13/0497 ,  H04N5/7408 ,  G02B2027/0132 ,  G02B2027/0136 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/00 ,  H04N13/0059 ,  H04N13/0285 ,  H04N13/0427 ,  H04N13/0456 ,  H04N5/70 ,  H04N5/7491

Abstract: A field emitter array device includes a ceramic substrate member having a multiplicity of through conductive vias therein. An insulative material layer is located on the ceramic substrate member. An addressable array of gate and emitter line elements is located on the insulative material and is conductively coupled to the through substrate conductive vias. A backside connector is located on the ceramic substrate member and conductively coupled to the vias for connection of the ceramic substrate member with an array driver device for the addressable array of emitter and gate line elements. A field emitter array of field emitter elements on the insulative material layer of the ceramic substrate member which are operatively coupled with the addressable array of gate and emitter line elements.

Abstract translation: 场致发射体阵列器件包括其中具有多个通孔的陶瓷衬底构件。 绝缘材料层位于陶瓷基板部件上。 栅极和发射极线元件的可寻址阵列位于绝缘材料上并与导电通孔导电耦合。 背面连接器位于陶瓷基板构件上并且导电地耦合到通孔，用于将陶瓷基板构件与用于可寻址阵列的发射极和栅极线路元件的阵列驱动器装置连接。 在陶瓷衬底构件的绝缘材料层上的场发射极元件的场发射极阵列，其与栅极和发射极线元件的可寻址阵列可操作地耦合。

公开(公告)号：US5889361A

公开(公告)日：1999-03-30

申请号：US92884

申请日：1998-06-08

Applicant: Wen Chun Wang ,  Jermmy J. M. Wang ,  Tzung-Zu Yang

Inventor： Wen Chun Wang ,  Jermmy J. M. Wang ,  Tzung-Zu Yang

IPC: H01J3/02 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J3/022 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cold cathode field emission device is described. A key feature of its design is that groups of microtips share a single conductive disk with a reliable ballast resistor being interposed between each of these conductive disks and the cathode conductor. Additionally, a resistor, rather than a conductor, is used to connect the gate conductive disk to the gate electrode. The latter is arranged so as not to overlap with the cathode electrode. The cathode and gate conductive disks ensure that the ballast resistance associated with each microtip is essentially the same.

Abstract translation: 描述冷阴极场致发射器件。 其设计的一个关键特征是，一组微尖头共享一个导电盘，在这些导电盘和阴极导体之间​​插入可靠的镇流电阻。 此外，使用电阻器而不是导体将栅极导电盘连接到栅电极。 后者被布置成不与阴极重叠。 阴极和栅极导电盘确保与每个微尖端相关联的镇流电阻基本相同。

公开(公告)号：US5872422A

公开(公告)日：1999-02-16

申请号：US575485

申请日：1995-12-20

Applicant: Xueping Xu ,  Charles P. Beetz ,  George R. Brandes ,  Robert W. Boerstler ,  John W. Steinbeck

Inventor： Xueping Xu ,  Charles P. Beetz ,  George R. Brandes ,  Robert W. Boerstler ,  John W. Steinbeck

IPC: H01J1/304 ,  H01J1/30

CPC classification number: H01J1/304 ,  B82Y10/00 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/939

Abstract: Electron field emission devices (cold cathodes), vacuum microelectronic devices and field emission displays which incorporate cold cathodes and methods of making and using same. More specifically, cold cathode devices comprising electron emitting structures grown directly onto a substrate material. The invention also relates to patterned precursor substrates for use in fabricating field emission devices and methods of making same and also to catalytically growing other electronic structures, such as films, cones, cylinders, pyramids or the like, directly onto substrates.

Abstract translation: 包含冷阴极的电子场发射器件（冷阴极），真空微电子器件和场发射显示器及其制造和使用方法。 更具体地，包括直接生长在基底材料上的电子发射结构的冷阴极器件。 本发明还涉及用于制造场致发射器件的图案化前体衬底及其制造方法，并且还涉及直接在衬底上直接催化生长其它电子结构，例如膜，锥体，圆柱体，金字塔等。

公开(公告)号：US5872019A

公开(公告)日：1999-02-16

申请号：US718789

申请日：1996-09-24

Applicant: Jong Duk Lee ,  Hyung Soo Uh

Inventor： Jong Duk Lee ,  Hyung Soo Uh

IPC: H01J17/49 ,  H01J1/304 ,  H01J9/02 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L21/00

CPC classification number: H01J9/025 ,  H01J2201/319 ,  H01J2329/00

Abstract: The present invention provides field emitter arrays (FEAs) having incorporated with metal oxide semiconductor field effect transistors (MOSFETs) and method for fabricating the same which realizes a simultaneous fabrication of two kinds of devices, namely, the FEA and MOSFETs, by using common processing steps among the processes of fabricating the Si-FEA or the metal FEA and the MOSFETs, wherein the method comprises steps of forming field emission tips and active regions for MOSFETs by oxidizing selected portions of the silicon nitride layer, forming a gate insulating oxide layers for the FEA and field oxide layers for MOSFETs simultaneously by the LOCOS method and connecting gate electrodes(row line) and cathode electrodes(column line) of the FEA to MOSFETs.

Abstract translation: 本发明提供了并入金属氧化物半导体场效应晶体管（MOSFET）的场发射极阵列（FEAs）及其制造方法，其通过使用共同的处理实现两种器件即FEA和MOSFET的同时制造 在制造Si-FEA或金属FEA和MOSFET的过程中的步骤，其中该方法包括以下步骤：通过氧化氮化硅层的选定部分来形成MOSFET的场致发射尖端和有源区，形成用于 通过LOCOS方法同时进行MOSFET的FEA和场氧化物层，并将FEA的栅电极（行线）和阴极（列线）连接到MOSFET。

公开(公告)号：US5866979A

公开(公告)日：1999-02-02

申请号：US897240

申请日：1997-07-18

Applicant: David A. Cathey, Jr. ,  John Lee

Inventor： David A. Cathey, Jr. ,  John Lee

IPC: G09F9/30 ,  H01J9/02 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/12 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J9/025 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

Abstract: A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.

Abstract translation: 提供了一种制造具有改善的结漏电特性的场发射显示（FED）的方法。 该方法包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成遮光元件。 光阻挡元件保护接点免受在显示屏上形成的光和在环境中产生的光的撞击。 因此，结的电气特性保持恒定，并且提高结漏电。 遮光元件可以形成为不透明的光吸收或光反射层。 此外，遮光元件可以被图案化以保护基板的预定区域并且可以提供诸如互连层的其它电路功能。