公开(公告)号：US20230227968A1

公开(公告)日：2023-07-20

申请号：US18190246

申请日：2023-03-27

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Hua Chung ,  Schubert Chu ,  Mei Chang ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/42 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52 ,  C23C16/507 ,  C23C16/14

CPC classification number: C23C16/42 ,  C23C16/513 ,  C23C16/45536 ,  C23C16/52 ,  C23C16/507 ,  C23C16/45542 ,  C23C16/14

Abstract: Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

公开(公告)号：US20230126055A1

公开(公告)日：2023-04-27

申请号：US17971217

申请日：2022-10-21

Applicant: Applied Materials, Inc.

Inventor： Michael L. McSwiney ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Drew Phillips ,  Aaron Dangerfield ,  David Thompson ,  Kevin Kashefi ,  Xiangjin Xie

IPC: H01L21/768 ,  H01L21/02 ,  B05D1/00

Abstract: Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US11560804B2

公开(公告)日：2023-01-24

申请号：US17832568

申请日：2022-06-03

Applicant: Applied Materials, Inc.

Inventor： Yuriy Melnik ,  Sukti Chatterjee ,  Kaushal Gangakhedkar ,  Jonathan Frankel ,  Lance A. Scudder ,  Pravin K. Narwankar ,  David Alexander Britz ,  Thomas Knisley ,  Mark Saly ,  David Thompson

IPC: F01D5/28 ,  C23C16/455 ,  C23C16/34 ,  C23C16/40 ,  C23C16/30 ,  C23C16/56 ,  F01D9/02 ,  F01D25/12 ,  F01D25/28 ,  F23R3/28 ,  C07F11/00 ,  F01D25/14

Abstract: Methods for forming protective coatings on aerospace components are provided. In one or more embodiments, the method includes exposing an aerospace component to a first precursor and a first reactant to form a first deposited layer on a surface of the aerospace component by a first deposition process (e.g., CVD or ALD), and exposing the aerospace component to a second precursor and a second reactant to form a second deposited layer on the first deposited layer by a second deposition process. The first deposited layer and the second deposited layer have different compositions from each other. The method also includes repeating the first deposition process and the second deposition process to form a nanolaminate film stack having from 2 pairs to about 1,000 pairs of the first deposited layer and the second deposited layer consecutively deposited on each other.

公开(公告)号：US11515155B2

公开(公告)日：2022-11-29

申请号：US17197866

申请日：2021-03-10

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Michael S. Jackson ,  Liqi Wu ,  Lei Zhou ,  Shuyi Zhang ,  David Thompson ,  Paul F. Ma ,  Biao Liu ,  Cheng Pan

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/56 ,  H01L21/3105 ,  H01L21/32

Abstract: Methods of improved selectively for SAM-based selective depositions are described. Some of the methods include forming a SAM on a second surface and a carbonized layer on the first surface. The substrate is exposed to an oxygenating agent to remove the carbonized layer from the first surface, and a film is deposited on the first surface over the protected second surface. Some of the methods include overdosing a SAM molecule to form a SAM layer and SAM agglomerates, depositing a film, removing the agglomerates, reforming the SAM layer and redepositing the film.

公开(公告)号：US11286564B2

公开(公告)日：2022-03-29

申请号：US16456964

申请日：2019-06-28

Applicant: Applied Materials, Inc.

Inventor： Thomas Knisley ,  Mark Saly ,  David Thompson

IPC: C23C16/30 ,  C23C16/455 ,  C09D1/00 ,  C01G19/02 ,  C01B32/914 ,  C01B35/04 ,  C01B33/06 ,  C01B21/06

Abstract: Tin containing precursors and methods of forming tin-containing thin films are described. The tin precursor has a tin-diazadiene bond and is homoleptic or heteroleptic. A suitable reactant is used to provide one of a metallic tin film or a film comprising one or more of an oxide, nitride, carbide, boride and/or silicide. Methods of forming ternary materials comprising tin with two or more of oxygen, nitrogen, carbon, boron, silicon, titanium, ruthenium and/or tungsten are also described.

公开(公告)号：US10943780B2

公开(公告)日：2021-03-09

申请号：US16195168

申请日：2018-11-19

Applicant: Applied Materials, Inc.

Inventor： Bhaskar Jyoti Bhuyan ,  Mark Saly ,  David Thompson ,  Li-Qun Xia

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/02 ,  C23C16/40

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and an alcohol. These methods do not oxidize the underlying metal layer.

公开(公告)号：US10906925B2

公开(公告)日：2021-02-02

申请号：US16747220

申请日：2020-01-20

Applicant: Applied Materials, Inc.

Inventor： Benjamin Schmiege ,  Jeffrey W. Anthis ,  David Thompson

IPC: C07F15/00 ,  C23C16/34 ,  C23C16/50 ,  C23C16/455 ,  C23C16/40 ,  C23C16/18

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

公开(公告)号：US20200335329A1

公开(公告)日：2020-10-22

申请号：US16388543

申请日：2019-04-18

Applicant: Applied Materials, Inc.

Inventor： Jeffery W. Anthis ,  Nicolas Louis Gabriel Breil ,  David Thompson ,  Feng Q. Liu ,  Liqi Wu

IPC: H01L21/02

Abstract: Exemplary methods of forming nickel-containing materials may include forming a layer of a nickel-and-oxygen-containing material overlying a substrate. The nickel-and-oxygen-containing material may be characterized by a carbon content. The methods may also include annealing the nickel-containing material with a carbon-containing precursor at a temperature greater than or about 100° C. The carbon content within the nickel-and-oxygen-containing material may be maintained during the annealing.

公开(公告)号：US10790188B2

公开(公告)日：2020-09-29

申请号：US16159115

申请日：2018-10-12

Applicant: Applied Materials, Inc.

Inventor： Nasrin Kazem ,  Jeffrey W. Anthis ,  David Thompson

IPC: C23C16/06 ,  H01L21/768 ,  C23C16/04 ,  C23C16/56 ,  H01L21/285

Abstract: Methods for filling a substrate feature with a seamless ruthenium gap fill are described. The methods include depositing a ruthenium film, oxidizing the ruthenium film to form an oxidized ruthenium film, reducing the oxidized ruthenium film to a reduced ruthenium film and repeating the oxidation and reduction processes to form a seamless ruthenium gap fill.

公开(公告)号：US10699897B2

公开(公告)日：2020-06-30

申请号：US15413956

申请日：2017-01-24

Applicant: Applied Materials, Inc.

Inventor： Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Jeffrey W. Anthis ,  Feng Q. Liu ,  David Thompson

IPC: H01L21/02 ,  C23C16/30 ,  C23C16/455 ,  C23C16/40 ,  C23C16/32 ,  C23C16/34 ,  C23C16/36

Abstract: Provided are acetylide-based compounds and methods of making the same. Also provided are methods of using said compounds in film deposition processes to deposit films comprising silicon. Certain methods comprise exposing a substrate surface to a acetylide-based precursor and a reactant in various combinations.