公开(公告)号：US12107314B2

公开(公告)日：2024-10-01

申请号：US16911934

申请日：2020-06-25

Applicant: Intel Corporation

Inventor： Neelam Prabhu Gaunkar ,  Georgios Dogiamis ,  Telesphor Kamgaing ,  Henning Braunisch ,  Diego Correas-Serrano

IPC: H01P5/02 ,  H01P1/04 ,  H01P1/20 ,  H01P3/00 ,  H01P3/16 ,  H01Q5/328 ,  H01Q13/26

CPC classification number: H01P5/028 ,  H01P1/047 ,  H01P1/2002 ,  H01P3/003 ,  H01P3/16 ,  H01Q5/328 ,  H01Q13/26

Abstract: Disclosed herein are components for millimeter-wave communication, as well as related methods and systems.

公开(公告)号：US12087682B2

公开(公告)日：2024-09-10

申请号：US16907797

申请日：2020-06-22

Applicant: Intel Corporation

Inventor： Adel Elsherbini ,  Feras Eid ,  Georgios Dogiamis ,  Beomseok Choi ,  Henning Braunisch ,  William Lambert ,  Krishna Bharath ,  Johanna Swan

IPC: H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/48 ,  H01L23/50 ,  H01L25/00 ,  H01L25/065 ,  H05K1/18

CPC classification number: H01L23/50 ,  H01L21/4853 ,  H01L21/563 ,  H01L23/3185 ,  H01L23/367 ,  H01L23/481 ,  H01L23/562 ,  H01L24/16 ,  H01L25/0657 ,  H01L25/50 ,  H05K1/181 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/18161

Abstract: An integrated circuit assembly may be fabricated having an electronic substrate, an integrated circuit device having a first surface, an opposing second surface, at least one side extending between the first surface and the second surface, and at least one through-substrate via extending into the integrated circuit device from the second surface, wherein the first surface of the integrated circuit device is electrically attached to the electronic substrate; and at least one power delivery route electrically attached to the second surface of the integrated circuit device and to the electronic substrate, wherein the at least one power delivery route is conformal to the side of the integrated circuit device and the first surface of the electronic substrate.

公开(公告)号：US20240063202A1

公开(公告)日：2024-02-22

申请号：US17820968

申请日：2022-08-19

Applicant: Intel Corporation

Inventor： Adel A. Elsherbini ,  Thomas Sounart ,  Henning Braunisch ,  William J. Lambert ,  Kaladhar Radhakrishnan ,  Shawna M. Liff ,  Mohammad Enamul Kabir ,  Omkar G. Karhade ,  Kimin Jun ,  Johanna M. Swan

IPC: H01L25/18 ,  H01L23/522 ,  H01L49/02 ,  H01L23/00 ,  H01L23/498 ,  H01L23/48 ,  H01L25/00

CPC classification number: H01L25/18 ,  H01L23/5223 ,  H01L28/90 ,  H01L24/08 ,  H01L23/49811 ,  H01L23/481 ,  H01L25/50 ,  H01L24/80 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896

Abstract: Embodiments of a microelectronic assembly comprise: a plurality of layers of IC dies in a dielectric material, adjacent layers in the plurality of layers being coupled together by first interconnects having a pitch of less than 10 micrometers between adjacent first interconnects; a package substrate coupled to a first side of the plurality of layers by second interconnects; a support structure coupled to a second side of the plurality of layers by third interconnects, the second side being opposite to the first side; and capacitors in at least the plurality of layers or the support structure. The capacitors are selected from at least planar capacitors, deep trench capacitors and via capacitors.

公开(公告)号：US11824008B2

公开(公告)日：2023-11-21

申请号：US17956761

申请日：2022-09-29

Applicant: Intel Corporation

Inventor： Henning Braunisch ,  Chia-Pin Chiu ,  Aleksandar Aleksov ,  Hinmeng Au ,  Stefanie M. Lotz ,  Johanna M. Swan ,  Sujit Sharan

IPC: H01L23/538 ,  H01L23/13 ,  H01L23/00 ,  H01L25/065 ,  H01L21/683

CPC classification number: H01L23/5385 ,  H01L23/13 ,  H01L23/5381 ,  H01L24/14 ,  H01L24/73 ,  H01L25/0652 ,  H01L25/0655 ,  H01L25/0657 ,  H01L21/6835 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/141 ,  H01L2224/1403 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/17181 ,  H01L2224/32245 ,  H01L2224/45099 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2224/73207 ,  H01L2224/73253 ,  H01L2224/81001 ,  H01L2224/81005 ,  H01L2224/81801 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06562 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01076 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/10271 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/19107 ,  H01L2924/351 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2224/49175 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2224/45147 ,  H01L2924/00 ,  H01L2924/01015 ,  H01L2924/00 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/0401 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/00011 ,  H01L2224/0401

Abstract: A multi-chip package includes a substrate (110) having a first side (111), an opposing second side (112), and a third side (213) that extends from the first side to the second side, a first die (120) attached to the first side of the substrate and a second die (130) attached to the first side of the substrate, and a bridge (140) adjacent to the third side of the substrate and attached to the first die and to the second die. No portion of the substrate is underneath the bridge. The bridge creates a connection between the first die and the second die. Alternatively, the bridge may be disposed in a cavity (615, 915) in the substrate or between the substrate and a die layer (750). The bridge may constitute an active die and may be attached to the substrate using wirebonds (241, 841, 1141, 1541).

公开(公告)号：US11756948B2

公开(公告)日：2023-09-12

申请号：US16400768

申请日：2019-05-01

Applicant: Intel Corporation

Inventor： Thomas Sounart ,  Aleksandar Aleksov ,  Henning Braunisch

IPC: H01L27/01 ,  H01L21/47 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L27/016 ,  H01L21/47 ,  H01L23/5223 ,  H01L23/5226 ,  H01L28/75

Abstract: Embodiments described herein are directed to a thin film capacitor (TFC) for power delivery that is in situ in a package substrate and techniques of fabricating the TFC. In one example, the TFC includes a first electrode, a dielectric layer over the first electrode, and a second electrode over the dielectric layer. Each of the dielectric layer and the second electrode comprises an opening. Furthermore, the two openings are positioned over one another such that the openings expose a surface of the first electrode. In this example, a first vertical interconnect access (via) is positioned on the exposed surface of the first electrode and a second via is positioned on an exposed surface of the second electrode. The TFC can be positioned in or on a layer of the package substrate close to a component (e.g., a die, a die stack, etc.) on the package substrate that may require a decoupling capacitance.

公开(公告)号：US20230096368A1

公开(公告)日：2023-03-30

申请号：US17485243

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Adel Elsherbini ,  Johanna Swan ,  Feras Eid ,  Thomas L. Sounart ,  Henning Braunisch ,  Beomseok Choi ,  Krishna Bharath ,  Kaladhar Radhakrishnan ,  William J. Lambert

IPC: H01L49/02 ,  H01F27/255 ,  H01F27/28 ,  H01F41/04 ,  H01F41/02 ,  H01L23/498 ,  H01L23/64 ,  H01L21/48

Abstract: An inductor structure, a package substrate, an integrated circuit device, an integrated circuit device assembly and a method of fabricating the inductor structure. The inductor structure includes: an electrically conductive body; and a magnetic structure including a non-electrically-conductive magnetic material, wherein: one of the magnetic structure or the electrically conductive body wraps around another one of the magnetic structure or the electrically conductive body to form the inductor structure therewith; and at least one of the electrically conductive body or the magnetic structure has a granular microstructure including randomly distributed particles presenting substantially non-linear particle-to-particle boundaries with one another.

公开(公告)号：US20230095063A1

公开(公告)日：2023-03-30

申请号：US17484286

申请日：2021-09-24

Applicant: Intel Corporation

Inventor： Beomseok Choi ,  William J. Lambert ,  Krishna Bharath ,  Kaladhar Radhakrishnan ,  Adel Elsherbini ,  Henning Braunisch ,  Stephen Morein ,  Aleksandar Aleksov ,  Feras Eid

IPC: G05F1/44 ,  H01L23/50 ,  H01L25/065

Abstract: In one embodiment, an apparatus includes a first die with voltage regulator circuitry and a second die with logic circuitry. The apparatus further includes an inductor, a capacitor, and a conformal power delivery structure on the top side of the apparatus, where the voltage regulator circuitry is connected to the logic circuitry through the inductor, the capacitor, and the conformal power delivery structure. The conformal power delivery structure includes a first electrically conductive layer defining one or more recesses, a second electrically conductive layer at least partially within the recesses of the first electrically conductive layer and having a lower surface that generally conforms with the upper surface of the first electrically conductive layer, and a dielectric material between the surfaces of the first electrically conductive layer and the second electrically conductive layer that conform with one another.

公开(公告)号：US20220173489A1

公开(公告)日：2022-06-02

申请号：US17672876

申请日：2022-02-16

Applicant: Intel Corporation

Inventor： Georgios Dogiamis ,  Adel A. Elsherbini ,  Telesphor Kamgaing ,  Henning Braunisch ,  Johanna M. Swan

IPC: H01P3/16 ,  H01L23/66 ,  H01P11/00

Abstract: Disclosed herein are various designs for dielectric waveguides, as well as methods of manufacturing such waveguides. One type of dielectric waveguides described herein includes waveguides with one or more cavities in the dielectric waveguide material. Another type of dielectric waveguides described herein includes waveguides with a conductive ridge in the dielectric waveguide material. Dielectric waveguides described herein may be dispersion reduced dielectric waveguides, compared to conventional dielectric waveguides, and may be designed to adjust the difference in the group delay between the lower frequencies and the higher frequencies of a chosen bandwidth.

公开(公告)号：US20220130763A1

公开(公告)日：2022-04-28

申请号：US17572167

申请日：2022-01-10

Applicant: Intel Corporation

Inventor： Ravindranath V. Mahajan ,  Zhiguo Qian ,  Henning Braunisch ,  Kemal Aygun ,  Sujit Sharan

IPC: H01L23/538 ,  H01L25/065

Abstract: A device and method of utilizing a repeater circuit to extend the viable length of an interconnect bridge. Integrated circuit packages using a repeater circuit in a repeater die, embedded in a substrate, and included in an interconnect bridge are show. Methods of connecting semiconductor dies using interconnect bridges coupled with repeater circuits are shown.

公开(公告)号：US20220102483A1

公开(公告)日：2022-03-31

申请号：US17033279

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： Thomas Sounart ,  Kaan Oguz ,  Neelam Prabhu Gaunkar ,  Aleksandar Aleksov ,  Henning Braunisch ,  I-Cheng Tung

IPC: H01L49/02

Abstract: Low leakage thin film capacitors for decoupling, power delivery, integrated circuits, related systems, and methods of fabrication are disclosed. Such thin film capacitors include a titanium dioxide dielectric and one or more noble metal oxide electrodes. Such thin film capacitors are suitable for high voltage applications and provide low current density leakage.